前馈式RF功率放大器的线性化技术

针对现代高频通信的要求,介绍了一种含导频信号的前馈式RF功率放大器的线性化技术,并详尽论述了其工作原理。     

一种新的用于射频功率放大器的预失真器

研究了一种新的预失真线性化电路,他由2路谐波发生器组成,每个谐波发生器都由2个工作于不同偏置电压下的肖特基二极管、电容、电阻和3 dB电桥耦合器(Hybrid)构成。通过调节二极管的偏置电压,可分别产生IM3或IM5。将此预失真线性化电路用于5 W射频功率放大器中,分别独立地对消IMD3和IMD5。双音测试表明,IMD3和IMD5分别改善了14 dBc和9 dBc。     

Frequency-Selective Predistortion Linearization of RF Power Amplifiers

This paper presents a frequency-selective RF vector predistortion linearization system for RF multicarrier power amplifiers (PAs) affected by strong differential memory effects. Differential memory effects can be revealed in two-tone experiment by the divergence for increasing tone-spacing of the vector Volterra coefficients associated with the lower and upper intermodulations tones. Using large-signal vector measurement with a large-signal network analyzer, a class-AB LDMOS RF PA is demonstrated to exhibit a strong differential memory effect for modulation bandwidth above 0.3 MHz. New frequency-selective RF and baseband predistortion linearization algorithms are proposed to separately address the linearization requirements of the interband and inband intermodulation products of both the lower and upper sidebands. Theoretical verification of the algorithms are demonstrated with Matlab simulations using a Volterra/Wiener PA model with memory effects. The baseband linearization algorithm is next implemented in a field-programmable gate array and experimentally investigated for the linearization of the class-AB LDMOS PA for two carrier wideband code-division multiple-access signals. The ability of the algorithm to selectively linearize the two interband and four inband intermodulation products is demonstrated. Adjacent channel leakage ratio of up to 45 dBc for inband and interband are demonstrated experimentally at twice the typical fractional bandwidth.     

射频与毫米波功率放大器新进展

近年来,随着5G 演进和未来6G 技术的研究与突破,以及在应用端如物联网、智能驾驶等领域的技术迭代升级,都对射频与毫米波系统的设计提出更多的需求和更高的要求。功率放大器作为发射机的关键部件,其特性直接影响发射系统的信号覆盖距离、传输质量和功耗等指标。为了研制高性能射频与毫米波功率放大器,提出了各种新技术。文章将从有源放大器、无源网络的传输线型实现、系统电路架构三方面对功率放大器取得的新进展进行介绍。     

一种射频功率放大器自适应预失真线性化技术

研究一种用于改善射频功率放大器非线性失真的预失真技术。文中给出了平行式失真信号产生电路结构,提出了该电路改善射频功率放大器非线性新的应用方式,并对其特性进行了分析,在此基础上添加了自适应控制电路,提高了系统的稳定性。最后给出了ADS仿真结果。实验结果表明,IMD3的性能得到有效的改善。     

Envelope Following-Based RF Transmitters Using Switching-Mode Power Amplifiers

This research presents a high-efficiency linear radio frequency transmitter applying the envelope-following technique to a switching-mode power amplifier. The use of predistorted envelope and quadrature-modulated signals can linearize the nonlinear behavior with fairly high average efficiency. The experimental results show that the proposed transmitter can deliver a 1.9-GHz CDMA2000 1$times$signal with high adjacent channel power ratio, low error vector magnitude, and high power added efficiency over a wide range of modulated output power.     

动态偏置射频功率放大器设计

本文采用电子设计自动化(EDA)软件对动态偏置射频功率放大器进行仿真设计.详细介绍了动态偏置功率放大器的工作原理及其实现方法.文中根据输入信号的功率变化对末级场效应管漏极偏压进行动态控制以获得更高效率,该方法结构简单且实用性强.仿真结果表明该功率放大器对于2.0175GHz的TD-SCDMA调制信号,在整个输入功率变化范围内,功率附加效率(PAE)与传统的功放相比提高了5-12%左右.     

一种用于RF LDMOS功率放大器的匹配技术

介绍了射频高功率放大器设计中RF LDMOS器件的预匹配和匹配技术.针对一款高功率RF LDMOS-FET,在器件法兰封装内为其设计了预匹配电路,并在PCB板级对其进行了输入输出匹配电路的设计,使其在工作频带内较好地匹配到50 Ω的系统参考阻抗上.仿真及测试结果表明,当频率为950 MHz时,该RF LDMOS功放的P...     

基于PSO_SVM的射频功率放大器模型研究

针对神经网络和支持向量机在射频功率放大器建模领域存在的优缺点,提出一种利用PSO_SVM算法对射频功率放大器进行建模的方法.从理论上分析了支持向量机(SVM)及粒子群优化(PSO)算法的相关原理,并将PSO_SVM算法应用到功放器件建模中.仿真结果表明,基于PSO_SVM的射频功放模型在模型精度、小样本学习和逼近能力方面均优于传统SVM模型和BP神经网络(BPNN)模型.     

D类功放在便携式设备中的应用

采用D类放大器可延长电池供电终端产品的工作时间,并产生更少的热量,因此高效率D类音频功率放大器正越来越多地被用在移动电话、智能电话、PDA及其他类似便携式应用中,以取代AB类放大器。简单陈述了D类功放的原理,并以TI公司的芯片TPA2012D2为例,着重介绍了该芯片在便携式媒体播放器(PMP)中的应用实例。该例在实际应用中得到较好的音频播放表现。     

Power Supply Rejection for RF Amplifiers: Theory and Measurements

Supply noise is a significant problem in RF systems where it can mix with RF signals, degrading signal/noise ratios and potentially causing violation of spectral masks. This paper presents an analysis of the supply rejection properties of RF amplifiers. We extend a conventional Volterra-series formulation to treat multiport systems and use it to describe the mixing products between power supply noise and the RF carrier. It is shown that a multiport Volterra formulation can be used to treat weak nonlinearities in the system and that the nonsymmetric cross terms accurately predict low-order mixing phenomenon. We demonstrate the validity of our hand analysis through the design and fabrication of a power amplifier in 180-nm CMOS, operating between 900 MHz-2.4 GHz with a maximum output power of 15 dBm. Spectral regrowth of single-tone and EDGE modulation waveforms is shown to match within 1-3 dB across frequency and input signal power. Importantly, this analysis provides insight into the circuit-level mechanisms for susceptibility to power supply noise and can help designers improve the power supply rejection ratio robustness of system-on-chip wireless blocks and transmitter architectures.     

基于MATLAB的RF功率放大器互调失真仿真分析

应用Matlab仿真平台对RF功率放大器的互调失真(inter-modulation—IMD)进行了分析。结果表明:在输入信号峰值或峰值功率不变时,可以用输入为两个或三个正弦信号情况下的互调失真指标来估计输入为宽频带、高密度信号情况下的互调失真指标;通过降低输入功放信号的峰值功率可以降低互调失真分量的相对幅度。     

标准氟离子注入实现增强型GaN基功率器件

介绍了一种直接利用离子注入机对AlGaN/GaN高电子迁移率晶体管(HEMT)器件的栅下进行氟(F)离子注入的方法,成功实现了增强型HEMT器件,阈值电压从耗尽型器件的-2.6V移动到增强型器件的+1.9V.研究了注入剂量对器件性能的影响,研究发现随着注入剂量的不断增加,阈值电压不断地正向移动,但由于存在高能F离子的注入损伤,器件的正向栅极漏电随着注入剂量的增加而不断上升,阈值电压正向移动也趋于饱和.因此,提出采用在AlGaN/GaN异质结表面沉积栅介质充当能量吸收层,降低离子注入过程中的损伤,成功实现了阈值电压为+3.3 V,饱和电流密度约为200 mA/mm,同时具有一个较高的开关比109的增强型金属-绝缘层-半导体HEMT (MIS-HEMT)器件.     

A 3.3 V Power Feedback Chip for Linearization of RF Power Amplifiers

The power feedback technique is a simple and low cost linearization scheme suitable for consumer products such as hand sets. This paper presents a custom chip for linearization of RF power amplifiers using power feedback. The chip, implemented in a standard double-metal double-poly 0.6 m CMOS process, operates with 3.3 V supply voltage and consumes 62 mW. When it was used to linearize a commercially available high efficiency RF power amplifier at 850 MHz, experimental results showed that out-of-band power at 30 kHz offset was reduced some 10 dB for a /4-shifted DQPSK modulated North American digital cellular (NADC) signal. For the same level of adjacent channel interference (ACI), the efficiency was increased from 35% to 48%.     

双极RF功率管的深阱结终端

给出了双极 RF功率管新的深阱结终端结构 .模拟分析表明 ,具有优化宽度、优化深度且填充绝缘介质的深阱结终端结构能使雪崩击穿电压提高到理想值的 95 %以上 .实验结果表明 ,深阱结终端结构器件 DCT2 6 0的BVCBO为理想值的 94 % ,比传统终端结构器件高 14 % ;与传统结构相比 ,在不减小散热面积的情况下 ,该结构还减小集电结面积和漏电流 ,器件的截止频率提高 33% ,功率增益提高 1d B     

双极RF功率管的深阱结终端

给出了双极RF功率管新的深阱结终端结构.模拟分析表明,具有优化宽度、优化深度且填充绝缘介质的深阱结终端结构能使雪崩击穿电压提高到理想值的95%以上.实验结果表明,深阱结终端结构器件DCT260的BVCBO为理想值的94%,比传统终端结构器件高14%;与传统结构相比,在不减小散热面积的情况下,该结构还减小集电结面积和漏电流,器件的截止频率提高33%,功率增益提高1dB.     

GaN转移电子器件的性能与基本设计

基于GaN转移电子器件最基本的工作模式--畴渡越时间模式,计算了GaN转移电子器件的理想最高振荡频率,得到该类型微波转移电子器件的最高振荡频率可达4.7THz,接近GaAs转移电子器件最高振荡频率（0.6THz）的8倍. 从理论上计算出GaN转移电子器件的理想最大输出功率,结果表明GaN转移电子器件在功率输出方面具有很大优势. 最后还讨论了GaN转移电子器件在畴渡越时间模式下,能够产生稳定Gunn振荡的两个基本条件,即电子浓度N与器件有源区长度L乘积要大于该器件的设计标准（(NL)0=6.3E12cm-2) 及有源区的掺杂浓度N要小于临界掺杂浓度Ncrit(3.2E17cm-3) . 本工作揭示出GaN转移电子器件在高频率和大功率输出方面都具有重要优势,作为大功率THz微波信号源将具有广阔的应用前景.     

Design Optimization and DPD Linearization of GaN-Based Unsymmetrical Doherty Power Amplifiers for 3G Multicarrier Applications

In this paper, a design optimization approach for gallium-nitride (GaN)-based Doherty power amplifiers (PAs) is proposed to enhance linearizability and maximize the power-added efficiency (PAE) for multicarrier wideband code division multiple access (WCDMA) applications. This is based on the use of an input offset line at the peaking amplifier path to compensate, at a given backoff level, for the bias and power-dependant phase variation through the carrier and peaking paths. At a 6-dB output power backoff (OPBO), measurement results of the unsymmetrical unlinearized Doherty amplifier using a four-carrier WCDMA signal achieved results of close to 50% for the PAE and about -30 dBc for the adjacent channel leakage ratio. Linearization of the designed Doherty PA using a baseband digital predistortion technique led to quasi-perfect cancellation of spectrum regrowth. At an OPBO equal to the input signal's peak-to-average power ratio, -63- and -53-dBc adjacent channel power ratios were obtained when the Doherty amplifier was driven by single- and four-carrier WCDMA signals, respectively. To the best of the authors' knowledge, this represents the best reported results for PAE and linearity for GaN-based Doherty PAs linearized over 20 MHz of instantaneous bandwidth.     

GaN转移电子器件的性能与基本设计

基于GaN转移电子器件最基本的工作模式--畴渡越时间模式,计算了GaN转移电子器件的理想最高振荡频率,得到该类型微波转移电子器件的最高振荡频率可达4.7THz,接近GaAs转移电子器件最高振荡频率(0.6THz)的8倍.从理论上计算出GaN转移电子器件的理想最大输出功率,结果表明GaN转移电子器件在功率输出方面具有很大优势.最后还讨论了 GaN转移电子器件在畴渡越时间模式下,能够产生稳定Gunn振荡的两个基本条件,即电子浓度N与器件有源区长度L乘积要大于该器件的设计标准((NL)0=6.3×1012cm2)及有源区的掺杂浓度N要小于临界掺杂浓度Norit(3.2×1017cm-3).本工作揭示出GaN转移电子器件在高频率和大功率输出方面都具有重要优势,作为大功率THz微波信号源将具有广阔的应用前景.     

射频功放记忆效应的准确辨识和定量计算

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