退火[Co＼Cu]多层膜的固相反应与磁性

用双对向靶溅射方法制备了两种成分的「Ｃｏ（１．２ｎｍ）／Ｃｕ（ｔＣｕ）」（ｔＣｕ＝１．０ｎｍ，３．４ｎｍ）纳米多层膜。分别用ＴＥＭ和ＴＧ方法研究了「Ｃｏ／Ｃｕ」多层膜结构和磁怀随温度的变化。结果表明：ｔＣｕ＝１．０ｎｍ的多层样品出现了两个磁性转变点，这是因为样品中存在的两种磁性物质。ＴＥＭ分析结果证明这两种铁磁相为ｈｃｐＣｏ－Ｃｕ固溶体。     

Co／Ti非晶多层膜晶化过程中结构及磁性的变化

利用双对向靶溅射方法在室温下制备Ｃｏ／Ｔｉ非晶多层膜，并采用原位退火透射电镜和原位热重法，观测了Ｃｏ／Ｔｉ多层膜结构与磁性随温度的变化，结果表明：退火温度ｔａ为４００℃时，薄膜开始晶化，Ｃｏ，Ｔｉ颗粒析出并粗化；ｔａ＞６００℃时，具有铁磁性的Ｃｏ单质完全消失，全部转化为Ｃｏ２Ｔｉ相．热磁测量在３９０及５２０℃附近出现了两个明显的磁性转变峰，与薄膜结构变化对应．适当温度（４００—５２０℃）的退火可获得高饱和磁化强度的Ｃｏ－Ｔｉ颗粒膜．     

Co/Pt多层膜的结构和饱和磁化强度

采用离子束溅射技术制备Ｃｏ／Ｐｔ多层膜,用ＲＢＳ、小角ＸＲＤ和断面ＴＥＭ研究了多层膜的周期性调制结构,用ＶＳＭ研究了磁性层Ｃｏ和顺磁性层Ｐｔ的厚度变化对饱和磁化强度的影响。结果表明,多层膜具有良好的周期性层状结构,和设计值一致。样品的饱和磁化强度（Ｍｓ）随Ｃｏ层厚度增加而增大,随Ｐｔ层的厚度增大而减小。当Ｃｏ层和Ｐｔ层的厚度比一定时,样品的饱和磁化强度不受周期数的影响,符合Ｍｓ＝ＭｃｏｔＣｏ／Ｄ模     

离子束溅射制备Co／Pt多层膜的磁性研究

室温下采用ＶＳＭ测定了离子束溅射（ＩＢＳＤ）技术制备的Ｃｏ／Ｐｔ多层膜垂直方向的Ｍ－Ｈ回线。研究结果表明：Ｃｏ／Ｐｔ多层膜中单位体积Ｃｏ的饱和磁化强度ＭｓＣｏ小于块状Ｃｏ的饱和磁化强度;Ｃｏ／Ｐｔ多层膜的饱和磁化强度（Ｍｓ）与厚度有关：随Ｃｏ层厚度ｔＰｔ和多层膜总厚度ｔｆ的增加而增大,随Ｐｔ层厚度ｔｐｔ的增加而减小;外推结果表明当ｔＣｏ小于一个原子层厚（≈０２５ｎｍ）时,室温下Ｃｏ／Ｐｔ多层膜的饱和磁化强度为零,呈顺磁性     

用非晶态合金作中间层扩散连接Si_3N_4与40Cr钢的研究

本文采用非晶态Ｃｕ_（５０）Ｔｉ_（５０）Ｂ薄膜和纯Ｎｉ缓释层作复合中间层，较好地实现了ｓｉ_３Ｎ_４与４０Ｃｒ钢的扩散连接，连接时间和连接温度及缓释层厚度对接头的强度影响很大最佳连接工艺为：９００℃·４０ｍｉｎ·３０ＭＰａ，Ｎｉ缓释层的合适厚度为１ｍｍ接头的微观分析表明：缓释层与非晶态Ｃｕ_（５０）Ｔｉ_（５０）Ｂ之间存在着较强的物理冶金交互作用，导致非晶态中间层中的Ｔｉ的活度降低，并产生脆性金属间化合物，使接头强度下限Ｍｏ是较理想的阻挡层材料在非晶态Ｃｕ_（５０）Ｔｉ_（５０）Ｂ与Ｎｉ缓释层之间插入Ｍｏ层，能有效地抑制两者间的物理冶金交互作用，并缓解了接头的残余热应力，提高了接头的强度本文提出了陶瓷与金属扩散连接接头的新模式为：陶瓷／用于扩散反应的中间层／阻挡层／缓释层／金属。     

NiFe/Cu/,Co/Cu多层膜的巨磁阻特性

ＮｉＦｅ／Ｃｕ／,Ｃｏ／Ｃｕ多层膜的巨磁阻特性由于施加磁场而引起电阻变化的标志即磁阻效应（ＭＲ）,用多层膜时,比传统各向异性磁阻效应要大数倍到数十倍,所以称之为巨磁阻效应（ＧＭＲ）。这样的膜,适用于硬盘驱动（ＨＤＤ）用的磁头传感器和磁编码器等。日本未...     

界面散射对Ni_(80)Co_(20)/M(M=Co,Cr,Ag)多层膜各向异性磁电阻的影响

用磁控溅射方法制备了Ｎｉ８０Ｃｏ２０／Ｍ（Ｍ＝Ｃｏ,Ｃｒ,Ａｇ）多层膜样品系列,Ｃｏ,Ｃｒ,Ａｇ杂质层的标称厚度为０．１ｎｍ,研究了界面散射对多层膜的磁及输运性质的影响．零场电阻率ρ的测量结果表明,对含Ｃｒ样品,ρ随杂质层间距Ｌ的依赖关系能较好的用Ｆｕｃｈｓ－Ｓｏｎｄｈｅｉｍｅｒ（Ｆ－Ｓ）理论描述．而对含Ｃｏ和Ａｇ样品,ρ随Ｌ的依赖关系在Ｌ小于１５ｎｍ时开始偏离Ｆ－Ｓ理论．磁电阻测量表明,含Ｃｒ和Ａｇ样品,各向异性磁电阻Δρ在Ｌ＜１５ｎｍ时随Ｌ的减小陡然下降．对含磁性Ｃｏ元素的样品,其Δρ值在Ｌ＞１５ｎｍ时高于Ｎｉ８０Ｃｏ２０单层薄膜的Δρ值;在Ｌ＜１５ｎｍ时Δρ值随Ｌ呈现振荡变化的趋势．磁性测量表明,三个系列样品的矫顽力Ｈｃ在Ｌ＜１５ｎｍ时都随Ｌ近似直线上升,在Ｌ＞１５ｎｍ后趋于饱和;经４００℃真空退火后Ｈｃ都显著下降．     

离子束溅射制备Co／Pt多层膜的结构

采用高角Ｘ射线衍射（ＨＸＲＤ）和ＴＥＭ研究用离子束溅射（ＩＢＳＤ）技术制备的Ｃｏ／Ｐｔ多层膜的晶体结构和显微组织形貌，结果表明：Ｃｏ／Ｐｔ多层膜的晶体结构与Ｃｏ、Ｐｔ层厚度ｔＣｏ、ｔＰｔ密切相关。当ｔＣｏ＜ｔＰｔ＜２１０时，Ｃｏ、Ｐｔ层为共格ｆｃｃ结构，随ｔＣｏ、ｔＰｔ增加，逐渐向非共格关系转变，同时，Ｐｔ、Ｃｏ层晶格发生了严重畸变。ＴＥＭ发现Ｃｏ／Ｐｔ多层膜的组织形貌明显受基底影响，与沉积在Ｓｉ基底表面上的Ｃｏ／Ｐｔ多层膜相比，沉积在ＮａＣｌ上的Ｃｏ／Ｐｔ多层膜的晶粒出现择优取向且呈条纹状分布，晶粒明显粗化     

大块非晶Fe-Al-Ga-P-C-B-Si合金的热稳定性和磁性

大块非晶Ｆｅ┐Ａｌ┐Ｇａ┐Ｐ┐Ｃ┐Ｂ┐Ｓｉ合金的热稳定性和磁性近年来发现了一系列具有大玻璃形成能力的多元系非晶合金，如Ｍｇ－Ｌｎ－（Ｎｉ，Ｃｕ）、Ｌｎ－Ａｌ－ＴＭ、Ｚｒ－Ａｌ－ＴＭ、Ｚｒ－Ｔｉ－Ａｌ－ＴＭ、Ｚｒ－Ｔｉ－ＴＭ－Ｂｅ、Ｐｄ－Ｃｕ－Ｎｉ－Ｐ...     

喷射沉积Al—5.5Cu／TiB2自生复合材料的界面结构

运用ＴＥＭ观察了铸态、喷射沉积态Ａｌ－５．５Ｃｕ／ＴｉＢ２复合材料中ＴｉＢ２与基体的界面结构,发现在铸态时ＴｉＢ２与ａ（Ａｌ）之间存在的位向关系向「０３３２」ＴｉＢ２∥「１１０」ａ（Ａｌ）,（０１１）ＴｉＢ２∥（００２）ａ（Ａｌ）,而在沉积态时其位向关系为「００１」ＴｉＢ２∥「１１１」ａ（Ａｌ）,（１１２０）ＴｉＢ２∥（２２０）ａ（Ａｌ）。力学性能测试结果表明：喷射沉积后的Ａｌ－５．５Ｃｕ／ＴｉＢ     

Co/Pt multilayer-based pseudo spin valves with perpendicular magnetic anisotropy

Pseudo spin valves(SVs) exhibiting perpendicular magnetic anisotropy were prepared by magnetron sputtering. Magnetization measurements of the Co/Pt multilayers were performed to select the reference and free layers. The selection criteria are square magnetic hysteresis loops, weaker current shunting effect, and proper coercivity. The optimal reference layer and free layer are Pt(5.0 nm)/[Co(0.4 nm)/Pt(0.6 nm)]3/Co(0.4 nm)/Cu(3.0 nm)and Cu(3.0 nm)/[Co(0.4 nm)/Pt(1.5 nm)]4, respectively.The resulting pseudo SV exhibits two well-separated hysteresis loops when the field is applied perpendicular to the film plane. The minor hysteresis loop corresponding to the free layer shifts toward negative direction of the magnetic field axis, indicating ferromagnetic interlayer exchange coupling between the two magnetic layers. The coupling also enhances the coercivity(HC) of both layers. The perpendicular giant magnetoresistance(GMR) of 2.7 % is achieved with current in plane measurement. The GMR first increases when Pt seed layer is thickened, reaches a maximum of 3.0 % at 4 nm and then decreases with the further increase of thickness. But thicker Cu spacer layer always lowers the GMR of the SV.     

Microstructure and magnetic properties of Ti/Co/Ti films

The two series of as-deposited and annealed Ti/Co/Ti thin films were deposited by magnetron sputtering onto glass substrates at room temperature. The structural and magnetic properties of the films at room temperature were investigated as function of Co layer thickness. X-ray diffraction (XRD) profiles show Co nanograins are formed as the hexagonal-close-packed (hcp) structure. The perpendicular coercivity of the Ti(15 nm)/Co(30 nm)/Ti(15 nm) film annealed at 450 ℃ for 30 min is about 288 kA·m-1 .     

Magnetron sputtering deposition of [FePt/Ag]n multilayers for perpendicular recording

[FePt/Ag]n multilayers were deposited on glass substrates by RF magnetron sputtering and ex situ annealed at 550℃ for 30 min. The effects of inserted Ag layer thickness and the number of bilayer repetitions （n） on the structure and magnetic properties of the multilayers were investigated. It was found that the difference between in-plane and out-of-plane coercivities varied with an increase of inserted Ag layer thickness in the [FePt 2 nm/Ag x nm]10 multilayers. The ratio of out-of-plane coercivity to in-plane coercivity reached the maximum value with the Ag layer thickness of 5 nm, indicating that the Ag layer thickness plays an important role in obtaining perpendicular orientation. For the [FePt 2 nm/Ag 5 um]n multilayers, perpendicular orientation is also influenced by n. The maximum value of the ratio of out-of-plane coercivity to in-plane coercivity appeared when n was given as 8. It was found that the [FePt 2 nm/Ag 5 nm]8 had a high perpendicular coercivity of 520 kA/m and a low in-plane one of 88 kA/m, which shows a strong perpendicular anisotropy.     

Co/Pt多层膜的调制结构对磁光性能的影响

研究了Ｃｏ／Ｐｔ多层膜中,Ｃｏ层厚度,Ｃｏ、Ｐｔ含量比,溅射温度对多层膜磁光性能的影响。研究发现Ｃｏ层厚度及Ｃｏ、Ｐｔ含量比对Ｃｏ／ｐｔ多层膜的磁光性能起决定性影响。当ｔＣｏ〈０．４ｎｍ,ｔＣｏ／ｔＰｔ＝１／２时。可获得较好的综合磁光性能;适当提高溅射时基体的温度,可改善多层膜的结晶性并获得较好的调制周期结构,最终改善其磁光性能。     

Co/Cr/Pd多层膜的磁性及其准确性

研究了测量程序对不同Cr层厚度的Co／Cr／Pd多层膜磁性的影响，分析了反磁化机理在不同测量程序中对磁性准确性的影响。     

FERROMAGNETIC RESONANCE STUDIES OF Co/CoFe_2O_4 MULTILAYERS

1.IntroductionMultilayershaveattractedconsiderableattentionfromfundamentalandtechnologicalinterests.Manynewphenomenainmetal-metalmultilayers,suchasthereductionorenhancementofmagnetizationatinterfaces[1],themagneticanisotropyl'1,theoscillatoryinterlay...     

Magnetization and coercivity in Co/Pt multilayers with constant total Co layer thickness

Co/Pt multilayers with perpendicular anisotropy were deposited using a dc magnetron sputtering system under high vacuum. Magnetization process was investigated by the measurement of magnetic components parallel and perpendicular to the applied field. A dependence of the coercivity of Co/Pt multilayers on the Co layer thickness was reported, in which the total thickness of Co layers kept constant. It is observed that the coercivity increases with the increment of Co layer thickness. For the samples with the same Co layer thickness while different total Co layer thickness, the coercivity first increases and then decreases with the increase of the total thickness of Co layers. This effect could be attributed to the competition between the reduction of HC related to incoherent reversal and the step-up of HC contributed by the magnetic polarization of Pt atoms at the interface of Co and Pt layers during magnetization reversal. The results show that the change of the coercivity is strongly related to the Co layer thickness, but not the total thickness of Co layers. The dependence of the coercivity on the angle between an applied field and the easy axis shows that the nucleation mode is dominant in magnetization reversal process of the samples.     

STRUCTURE, MAGNETISM AND MAGNETORESISTANCE OF ANNEALED Co/Cu DISCONTINUOUS MULTILAYERS

1.IntroductionGiantmagnetoresistance(GMR)inmultilayprsandgranularfilmshasattractedmuchattentionforitsimportanceintheoriesandapplications.Recently,inordertoredlicethesaturationmagneticfieldofGMRl'orlow--fieldsensorapplications,someattemptshavebeenmadetoprepareintermediatesystemsbetweenmultilayersandgranularfiimsfl--6],suchasmultilayerswith1lltrathinandthereforediscontinuousmagneticlayersll,2]orannealedmagneticmultilayers[3--6].However,theverythinmagneticlayersbecomesuperparamagneticatroomtemp…