High-Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD-Grown n-MoS2 and p-MoTe2

In this work, monolithic three-dimensional complementary metal oxide semiconductor (CMOS) inverter array has been fabricated, based on large-scale n-MoS₂ and p-MoTe₂ grown by the chemical vapor deposition method. In the CMOS device, the n- and p-channel field-effect transistors (FETs) stack vertically and share the same gate electrode. High k HfO₂ is used as the gate dielectric. An Al₂O₃ seed layer is used to protect the MoS₂ from heavily n-doping in the later-on atomic layer deposition process. P-MoTe₂ FET is intentionally designed as the upper layer. Because p-doping of MoTe₂ results from oxygen and water in the air, this design can guarantee a higher hole density of MoTe₂. An HfO₂ capping layer is employed to further balance the transfer curves of n- and p-channel FETs and improve the performance of the inverter. The typical gain and power consumption of the CMOS devices are about 4.2 and 0.11 nW, respectively, at V_DD of 1 V. The statistical results show that the CMOS array is with high device yield (60%) and an average voltage gain value of about 3.6 at V_DD of 1 V. This work demonstrates the advantage of two-dimensional semi-conductive transition metal dichalcogenides in fabricating high-density integrated circuits.     

IMEC Industrial Affiliation Program (IIAP) as IPR model to set up nanotechnology research and patenting

The IP policy of IMEC is to avoid IP blocking among its research and business partners, to secure IPR for partners and to enable publications for researchers. This is achieved by setting up a specially designed Industrial Affiliation Program (referred to as IIAP) with licensing and/or co-ownership of IP between the partners. The business IP model applied within the IIAP model at IMEC is characterised by an open, multi-party approach with non-exclusive licensing as a base-line. The IIAP model is further characterized as an IP model in which dilution of IP is minimized in view of further transferability of technology. Using the cost-based and risk sharing approach of the IIAP program, an enhanced progress within new technology domains such as nanotechnology is obtained.     

Nitrogen Boosts Defective Vanadium Oxide from Semiconducting to Metallic Merit

2D metal oxide nanosheets have attracted substantial attention for various applications owing to their appealing advantages. Yet, the exploration of effective methodology for fabrication of metallic 2D metal oxides with a high concentration of N dopants in a scalable manner remains challenging. Herein, a topochemical strategy is demonstrated on vanadium oxide nanosheets by combining 2D nanostructuring, heteroatom‐doping, and defect engineering for modulating their intrinsic electronic structure and greatly enhancing their electrochemical property. O vacancies and N dopants (V? O? N and V? N bonds) are in situ formed in vanadium oxide via nitridation and lead to semiconductive‐to‐metallic phase transformation evidenced by experimental results and theoretical calculation. Overall, the N‐VO_0.9 nanosheets exhibit a metallic electron transportation behavior and excellent electrochemical performance. These findings shed light on the rational design and electron structure tuning of 2D nanostructures for energy and electronics applications.     

Thread‐Like CMOS Logic Circuits Enabled by Reel‐Processed Single‐Walled Carbon Nanotube Transistors via Selective Doping

The realization of large‐area electronics with full integration of 1D thread‐like devices may open up a new era for ultraflexible and human adaptable electronic systems because of their potential advantages in demonstrating scalable complex circuitry by a simply integrated weaving technology. More importantly, the thread‐like fiber electronic devices can be achieved using a simple reel‐to‐reel process, which is strongly required for low‐cost and scalable manufacturing technology. Here, high‐performance reel‐processed complementary metal‐oxide‐semiconductor (CMOS) integrated circuits are reported on 1D fiber substrates by using selectively chemical‐doped single‐walled carbon nanotube (SWCNT) transistors. With the introduction of selective n‐type doping and a nonrelief photochemical patterning process, p‐ and n‐type SWCNT transistors are successfully implemented on cylindrical fiber substrates under air ambient, enabling high‐performance and reliable thread‐like CMOS inverter circuits. In addition, it is noteworthy that the optimized reel‐coating process can facilitate improvement in the arrangement of SWCNTs, building uniformly well‐aligned SWCNT channels, and enhancement of the electrical performance of the devices. The p‐ and n‐type SWCNT transistors exhibit field‐effect mobility of 4.03 and 2.15 cm² V^?1 s^?1, respectively, with relatively narrow distribution. Moreover, the SWCNT CMOS inverter circuits demonstrate a gain of 6.76 and relatively good dynamic operation at a supply voltage of 5.0 V.     

A Scalable Approach to Dendrite‐Free Lithium Anodes via Spontaneous Reduction of Spray‐Coated Graphene Oxide Layers

Li‐metal batteries (LiMBs) are experiencing a renaissance; however, achieving scalable production of dendrite‐free Li anodes for practical application is still a formidable challenge. Herein, a facile and universal method is developed to directly reduce graphene oxide (GO) using alkali metals (e.g., Li, Na, and K) in moderate conditions. Based on this innovation, a spontaneously reduced graphene coating can be designed and modulated on a Li surface (SR‐G‐Li). The symmetrical SR‐G‐Li|SR‐G‐Li cell can run up to 1000 cycles at a high practical current density of 5 mA cm^?2 without a short circuit, demonstrating one of the longest lifespans reported with LiPF₆‐based carbonate electrolytes. More significantly, a practically scalable paradigm is established to fabricate dendrite‐free Li anodes by spraying a GO layer on the Li anode surface for large‐scale production of LiFePO₄/Li pouch cells, reflected by the continuous manufacturing of the SR‐G‐Li anodes based on the roll‐to‐roll technology. The strategy provides new commercial opportunities to both LiMBs and graphene.     

A Versatile and Simple Approach to Generate Light Emission in Semiconductors Mediated by Electric Double Layers

The light‐emitting device is the primary device for current light sources. In principle, conventional light‐emitting devices need heterostructures and/or intentional carrier doping to form a p–n junction. This junction formation is, however, very difficult to achieve for most emerging semiconductors, and the fabrication of light‐emitting devices is invariably a significant challenge. This study proposes a versatile and simple approach to realize light‐emitting devices. This proposed device requires only a semiconducting film with two electrodes that are covered with an electrolyte. This unique structure achieves light emission at a voltage slightly larger than the bandgap energy of materials. This study applies this concept to emerging direct bandgap semiconductors, such as transition metal dichalcogenide monolayers and zinc oxide single crystals. These devices generate obvious light emission and provide sufficient evidence of the formation of a dynamic p–i–n junction or tunneling junction, presenting a versatile technique to develop optoelectronic devices.     

A Novel Approach to High‐Performance Aliovalent‐Substituted Catalysts—2D Bimetallic MOF‐Derived CeCuOx Microsheets

Mixed transition metal oxides (MTMOs) have enormous potential applications in energy and environment. Their use as catalysts for the treatment of environmental pollution requires further enhancement in activity and stability. This work presents a new synthesis approach that is both convenient and effective in preparing binary metal oxide catalysts (CeCuO_x) with excellent activity by achieving molecular‐level mixing to promote aliovalent substitution. It also allows a single, pure MTMO to be prepared for enhanced stability under reaction by using a bimetallic metal–organic framework (MOF) as the catalyst precursor. This approach also enables the direct manipulation of the shape and form of the MTMO catalyst by controlling the crystallization and growth of the MOF precursor. A 2D CeCuO_x catalyst is investigated for the oxidation reactions of methanol, acetone, toluene, and o‐xylene. The catalyst can catalyze the complete reactions of these molecules into CO₂ at temperatures below 200 °C, representing a significant improvement in performance. Furthermore, the catalyst can tolerate high moisture content without deactivation.