高频C-V方法测量埋沟电荷耦合器件的沟道电势

本文提出通过栅控二极管在不同偏压下的高频C-V特性曲线,确定埋沟电荷耦合器件(BCCD)随栅压变化的沟道电势.对不同样品进行了高频C-V测量,并求出沟道电势与栅压的变化关系.同时,用直流I-V法进行了测量,结果与高频C-V方法所得到的结果非常接近.根据BCCD一维耗尽近似理论模型,进行了计算机模拟,结果表明,理论与实验结果符合得比较好.     

CCD摄象器件[11]——新的转移方式

一、电阻栅转移方式CCD摄象器件用于彩色电视摄象机时,主要问题是兰光灵敏度低以及因过量入射光产生的电晕。克服这方面缺点的一种方法是采用电阻栅转移方式。图1是这种方式的截面图,图2是这种转移方式的结构。在这种转移方式中,光信号电荷积分后在横方向转移,然后流入垂直方向的BCCD。该BCCD由剖面(profiled)PCCD构成,沟道在垂直方向,由电阻栅电极形成,下面具有倾斜的电势面。信号电荷在垂直沟道中移动,然后流入移位寄存器而读出。     

三沟道BCCD在X光区光电特性的数值模拟

本文对三沟道体电荷耦合器件（BCCD）在X光区的光电特性进行了数值模拟,结果表明：磁对X光的吸收曲线了硅制的三沟道BCCD不能在XI我区实现多光谱成像,通过理论分析,指出了能保证BCCD在X光区工作的衬底材料所应满足的吸收曲线,利用这种新材料制成的三沟道BCCD,其光敏特性可以分别在1．8keV,1.2keV,0.6keV处出现最大值。     

体陷阱对于体沟电荷耦合器件性能的影响

为了避免表面沟道电荷耦合器件中信号电荷与界面态的互作用造成的转移损失的限制,列入了一种体沟电荷耦合器件(BCCD’s)。它最初的名字叫做埋沟电荷耦合器件。运用一种循环本底电荷可以尽量减少这些限制,实际上通过测试已经获得了非常低的界面态密度(1×10~6cm~2·eV)。界面态也会引起与本底电荷无关的转移噪声。在本文里我们将会看到BCCD’s也会受到类似的影响,只是这些影响一般地讲要小些罢了。这些影响起因于信号电荷与体态的互作用。BCCD也曾被称之为蠕动电荷耦合器件,用它来扩大电极下面的边缘场而获得很高的工作频率。     

双栅掺杂隔离肖特基MOSFET的解析模型

通过考虑肖特基势垒降低效应求解三段连续的二维泊松方程,建立了双栅掺杂隔离肖特基MOSFET亚阈值区全沟道连续的电势模型。在该电势模型的基础上,推导了阈值电压模型和漏致势垒降低效应的表达式;研究了掺杂隔离区域不同掺杂浓度下的沟道电势分布,分析了沟道长度和厚度对短沟道效应的影响。结果表明,掺杂隔离区域能改善肖特基MOSFET的电学特性;对于短沟道双栅掺杂隔离肖特基MOSFET,适当减小沟道宽度能有效抑制短沟道效应。     

BCCD的一维模型及其数值分析

一、引 言 由于埋沟电荷耦合器件(BCCD)具有高速、高传输效率、低噪声等优点而受到人们的重视.国际上已有人对BCCD的模型进行了研究.其中McKenna假定埋层完全耗尽和杂质分布均匀的情况下,求出一维的电势分布.但没有考虑信号电荷.Kent曾考虑过信号电荷,但由于假定埋层中杂质分布是线生的,因而不可能给出解析解.Lees则     

BCCD器件解析物理模型与仿真研究

基于半导体图像传感器CCD的物理图像和相应的基本特性微分方程组,经过离散和线性化处理,并引用解三对角矩阵方程的递归算法,实现了其解析模型求解.据此及其相关的编程软件,对电注入埋沟CCD器件进行了仿真测试.结果表明,随着栅长减小、栅间隙长度增加和沟道深度减小,传输栅电荷容量约从6.5×106下降到6.1×106电子电荷,转移效率从96%增高到99%.同时,暗电流只与少子寿命密切相关,转移效率对栅间隙长度在1 μm以内的变化不敏感.该理论模拟结果有助于BCCD模型参数提取和设计研究.     

BCCD的一维模型及其数值分析,

<正> 一、引 言 由于埋沟电荷耦合器件(BCCD)具有高速、高传输效率、低噪声等优点而受到人们的重视.国际上已有人对BCCD的模型进行了研究.其中McKenna假定埋层完全耗尽和杂质分布均匀的情况下,求出一维的电势分布.但没有考虑信号电荷.Kent曾考虑过信号电荷,但由于假定埋层中杂质分布是线生的,因而不可能给出解析解.Lees则     

一种基于FPGA的自然场景的实时SAR回波模拟器

为了降低测试雷达系统的成本,设计出一种实时雷达回波模拟器对测试雷达系统的各项参数有很大的帮助。文中采用等效散射体回波模拟算法设计了一种基于FPGA的SAR回波模拟器。通过优化回波模拟算法,实时实现了SAR的回波模拟。实验结果表明,该设计模拟器可以在10.7 s内模拟出一帧1 024×1 024的自然场景的回波数据。最后对回波数据成像质量评估,证明了该回波模拟器的正确性。     

深结短沟道MOS晶体管准二维阈值电压模型

提出了一个新的短沟道MOS晶体管表面势的准二维解析模型。不同于经典模型,该模型对沟道耗尽层横向剖分,由高斯定理导出沟道耗尽层电势的一维微分方程,方程考虑了漏、源的横向电场对沟道耗尽层厚度的影响。求解方程得到了耗尽层厚度与表面势的关系函数,由此得出了一个包含有沟道长度的阈值电压公式。通过MEDICI软件对多种不同参数的MOS晶体管进行了仿真,此模型计算结果与MEDICI仿真数据吻合较好,比电荷分享模型精度高。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first