TiAl/Ti/Nb/GH99扩散连接接头的界面组织结构及接头强度

采用Ti/Nb复合中间层对TiAl与镍基高温合金(GH99)进行扩散连接.采用扫描电镜、电子探针和X射线衍射等手段对连接接头的生成相及界面组织结构进行分析,采用抗剪强度测试对接头的连接强度进行评价.结果表明,GH99/Nb/Ti/TiAl的典型界面结构为GH99/(Ni,Cr)ss/Ni3Nb/Ni6Nb7/Nb/(Ti,Nb)ss/α-Ti+(Ti,Nb)ss/Ti3Al/TiAl.当连接温度为900℃,连接时间为30 min,连接压力为20 MPa时,所得接头抗剪强度最高为273.8 MPa.随着连接温度的升高,界面组织结构及反应层厚度发生变化.当连接温度T>900℃时,界面处生成对接头强度有不利影响的Ni6Nb7反应层;根据试验结果,进一步分析了各反应层的形成过程,揭示了GH99/Nb和Nb/Ti/TiAl的界面扩散反应机制.     

时间和温度对放电等离子体扩散焊接Ti48Al2Cr2Nb合金接头显微组织的影响

采用放电等离子体扩散焊接技术,以Ti/Ni/Ti箔为中间层,实现了Ti48Al2Cr2Nb合金之间的扩散连接. 研究了焊接时间和温度对接头显微组织的影响. 结果表明,950 ℃时,保温15 min,中间层和基体中元素互扩散有限;保温时间延长到30 min,中间层在接头处扩散均匀. 在相同保温时间30 min的条件下,900 ℃和950 ℃得到的接头界面存在分层,各个层的主要物相都是α₂相,仅最内层存在α-Ti. 升高温度到1 000 ℃和1 050 ℃,接头界面分层消失,显微组织相似,都是由粗大的α₂相和固溶了少量Ni原子,Nb原子,Cr原子的α₂相组成. 放电等离子体烧结(SPS)对接头处的元素扩散有促进作用,尤其是Ni元素,使得接头内部没有TiNi和TiAlNi金属间化合物生成.     

Ti2AlNb合金瞬时液相扩散连接接头界面组织及性能分析

采用Ti/Ni作为中间层实现了Ti2AlNb合金的连接(transient liquid phase, TLP)，研究了TLP连接接头的界面组织及其形成机制，并且分析了不同保温时间对接头界面组织和力学性能的影响规律. 结果表明,Ti2AlNb合金TLP连接接头主要表现为等温凝固区和冷却凝固区两个明显的特征区域. 接头的典型界面组织为Ti2AlNb/B2/Nb3Al+B2+τ3+Ti2Ni/ Ti2AlNb. 随着保温时间的延长，接头中Nb3Al和Ti2Ni相消失，τ3相不断减少，B2相不断增多. 当连接温度为1 180 ℃，保温时间为20 min时，接头的室温抗剪强度最大，达到428 MPa，高温(650 ℃)抗剪强度达到407 MPa. 接头的断裂主要发生在冷却凝固区的τ3相上.     

用复合中间层扩散连接钛铝基合金与镍基合金

采用Ti／Nb和Ti／Nb／Ni复合中间层扩散连接钛铝基合金与镍基合金．采用扫描电镜、电子探针等手段对接头的界面组织及断口进行分析,采用抗剪强度测试对接头的连接强度进行评价．结果表明,在连接温度为900℃,连接压力为20MPa固定的情况下,采用Ti／Nb复合中间层,在连接时间为30min时,接头抗剪强度最高为273．8MPa,接头断裂于GH99／Nb界面;采用Ni／Nb／Ti复合中间层,在连接时间为60min时,接头抗剪强度最高为314．4MPa,接头断裂于Ti／TiAl界面的Ti3Al反应层．采用Ni／Nb／Ti复合中间层所得接头强度较Nb／Ti复合中间层有较大提高,且接头的断裂位置发生变化,说明镍中间层的加入,对缓解接头应力有一定的作用．     

钴/镍复合中间层真空扩散连接钨与钢

以钴粉/镍箔为复合中间层,采用800,900和1 000 ℃等三种连接温度,加压10 MPa并保温120 min的工艺条件,对钨/钢真空扩散连接. 研究了接头的微观组织、成分分布、力学性能及断口特征. 结果表明,连接温度为800 ℃和900 ℃时,钨/中间层界面金属间化合物生成很少,对应接头抗剪强度分别为186 MPa和172 MPa,断口均位于钨母材中近界面的位置,为典型解理断裂形貌;当连接温度升至1 000 ℃时,钨/中间层界面生成厚度小于2 μm的连续金属间化合物层,接头抗剪强度降至115 MPa,断裂也发生在钨母材中近界面的位置,断口大部分区域为沿晶断裂特征.     

添加中间层的Mo-Al箔材扩散连接工艺及界面结合机理的研究

在10 MPa、60 min的工艺条件下,分别添加5μm、20μm的Ni箔或5μm的Ti箔为中间层,采用三种工艺方案对10μm纯Mo箔和20μm、60μm纯Al箔进行真空扩散连接。方案一:在550℃下加Ni箔中间层的直接扩散连接;方案二:先在900℃进行Mo-Ni扩散连接,然后在450～550℃进行Mo/Ni与Al的连接;方案三:550℃下加Ti箔中间层的直接扩散连接。利用扫描电镜(SEM)观察接头界面形貌,并对结合机理和相组成进行分析。结果表明,方案一的焊合率仅为3%。方案二实现了界面良好连接,焊合率达到89%～100%,在Mo-Al之间存在5层反应产物,自Mo侧依次为MoNi、残留Ni层、Ni_2Al_3、NiAl_3、Al-Ni固溶体;中间层Ni箔的厚度由5μm增加到20μm时,Mo-Ni扩散层变厚,焊合率达到100%。采用方案三,即添加5μm的Ti箔做中间层时,获得了良好的界面连接,焊合率达到100%。     

瞬间液相扩散连接镁/镍/钛接头微观组织及力学性能研究

以Ni箔为中间层,对镁合金AZ31B和钛合金Ti6Al4V进行瞬间液相扩散焊。结合能谱分析、X射线衍射谱、显微硬度测试和力学性能试验,研究了焊接过程中不同焊接温度(505~535℃)对镁/钛接头微观组织及力学性能的影响。结果表明:当焊接温度为525℃、保温时间为20min、焊接压力为0.2MPa时,镁/钛接头达到最大剪切强度57MPa。此时,镁/钛接头界面形成Mg_2Ni、Mg_3AlNi_2等金属间化合物。在拉伸试验中,接头断裂发生在金属间化合物层。     

Cf/SiC复合材料与钛合金(Ti-Zr-Cu-Ni)+W复合-扩散连接

采用(Ti-Zr-Cu-Ni)+W复合钎料作为连接层,在连接温度930℃,保温时间5min的工艺参数下真空钎焊Cf/SiC复合材料与钛合金.利用SEM,EDS和XRD分析接头微观组织结构,利用剪切试验测试接头力学性能.结果表明,钎焊时复合钎料中的钛、锆与C/SiC复合材料反应,在Cf/SiC复合材料与连接层界面生成Ti3SiC2,Ti5Si3和少量TiC(ZrC)化合物的混合反应层,连接层的铜、镍与钛合金中的钛发生相互扩散,在连接层与钛合金界面形成Ti-Cu化合物过渡层.对钎焊接头进行900℃,保温60 min扩散处理后,连接层组织达到均一化,母材TC4合金侧过渡层增厚.扩散处理后接头强度为99 MPa,较钎焊接头强度65 MPa提高了52％.     

Ti_3Al基合金瞬间液相扩散连接接头组织与力学性能

采用TiZrNiCu合金作为中间层材料研究了Ti3Al基合金的瞬间液相扩散连接,采用扫描电镜(SEM)、能谱仪(EDS)、X射线衍射仪(XRD)及电子万能试验机研究了接头的组织结构与力学性能.结果表明,采用TiZrNiCu作为中间层可以实现Ti3Al基合金的TLP扩散连接,能形成完整的接头.较高的连接温度和较长的连接时间有利于获得成分和组织较为均匀的接头.随着连接温度的提高和连接时间的延长,接头连接区宽度增大,反应层数量减少.当连接温度为900℃,连接时间为60min时,接头组织主要为钛固溶体,TiAl和TiCu.接头抗剪强度最高,可达420.1MPa.     

SiCP/Al复合材料的真空扩散钎焊

文中采用Al/Cu/Al复合箔扩散钎焊SiC_P/Al复合材料,采用SEM,EDS,XRD分析接头界面组织,研究了钎焊温度对接头界面组织及力学性能的影响,并结合Al-Cu二元相图分析接头形成机制.结果表明,固定连接压力为1 MPa,保温时间为10 min,当钎焊温度从590℃升至640℃,接头界面产物由Al₂Cu+αAl共晶组织转变为断续的Al₂Cu金属间化合物,Al-Cu液相向两侧母材扩散的距离增加,接头的抗剪强度呈现先增大后减小的变化趋势.当钎焊温度为620℃,保温时间为10 min,连接压力为1 MPa时,接头的抗剪强度达到最大值69 MPa.     

Ti3SiC2、Ti3AlC2复相材料高温抗氧化行为的研究

以Ti粉、Si粉、铝粉、石墨为原料,在1600℃热压烧结制得试样,对不同配比Ti3SiC2、Ti3AlC2复相材料在1100～1500℃下恒温氧化20h的氧化行为进行研究.结果表明:热压法制备Ti3SiC2、Ti3AlC2复相材料在高温下具有比Ti3SiC2和Ti3AlC2更优良的高温抗氧化性能;由于试样氧化过程中产生了TiO2、SiO2、Al2TiO5和α-Al2O3,可有效提高试样的高温抗氧化能力.     

Ti3AlC2掺杂SPS法制备Ti2AlC/TiAl复合材料的研究

通过2TiC-Ti-1.2Al体系的原位热压反应制备了Ti₃AlC₂陶瓷,然后以59.2Ti-30.8Al-10Ti₃AlC₂(wt%)为反应体系,采用放电等离子烧结技术制备出Ti₂AlC/TiAl基复合材料。借助XRD、SEM分析了产物的相组成和微观结构,并测量了其室温力学性能。结果表明：原位热压烧结产物由Ti₃AlC₂和TiC相组成,Ti₃AlC₂呈典型的层状结构,TiC颗粒分布在其间。SPS法制备的Ti₂AlC/TiAl基复合材料主要由TiAl、Ti₃Al和Ti₂AlC相组成,Ti₂AlC增强相主要分布于基体晶界处,表现为晶界/晶内强化作用。力学性能测试表明：Ti₂AlC/TiAl基复合材料的密度、维氏硬度、断裂韧性和抗弯强度分别为3.85 g/cm₃、5.37 GPa、7.17 MPa?m_1/2和494.85 MPa。     

Deposition and characterization of non-isostructural (Ti0.7Al0.3N)/(Ti0.3Al0.7N) multilayers

Non-isostructural Ti_0.7Al_0.3N(cubic B1)/Ti_0.3Al_0.7N(hexagonal B4) nanoscale multilayers were deposited by dc magnetron sputtering on steel substrates, with nominal periods of 6, 10, 20 and 40 nm. The structure, composition, periodicity, and interface abruptness of the samples were characterized by X-ray diffraction, glow discharge optical spectroscopy, medium energy ion scattering, and narrow resonant nuclear reaction profiling. The nanohardness and elastic modulus of the samples were determined, revealing superhardness of up to 57 GPa for the lowest nanoscale multilayer period. The H³/E² ratios were found to be superior to those of most metal nitride multilayers commonly used as protective coatings, which indicates a superior wear resistance for the present nanostructured coating. The results are discussed in terms of the present stage of understanding of nanoscale multilayer effects on the tribological properties of protective coatings.     

Low-temperature fabrication of high purity Ti3SiC2

In this study, we fabricated high purity Ti₃SiC₂ ceramic by mechanical alloying (MA) and spark plasma sintering (SPS), and investigated the effect of trace amount of Al on these processes. Our results show that addition of proper amount of Al significantly increases the purity of Ti₃SiC₂ in the MA and subsequent SPS products, and remarkably reduces the sintering temperature for Ti₃SiC₂. Ti₃SiC₂ sintered compact with a purity of 96.5 wt% was obtained by 10 h of MA and subsequent SPS from a starting mixture composed of n(Ti):n(Si):n(Al):n(c) = 3:1:0.2:2 at 850 °C. At 1100 °C, Ti₃SiC₂ with a purity of 99.3 wt% and a relative density of 98.9% was obtained.     

Synthesis of Ti3SiC2 bulks by infiltration method

T₃SiC₂ bulks have been synthesized by infiltrating Si liquid into porous precursor pellets composed of solid TiC and Ti powders. Silicon pellets were placed at the bottom of the precursor pellets as the liquid source. The starting compositions can be represented by the formula 2TiC + Ti + xSi, where x = 1.0, 1.2, 1.5 and 1.8, respectively. The phase formation and microstructure of the bulks were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) equipped with energy-dispersive spectroscopy (EDS) system. The results demonstrated that the TiC/Ti precursor pellet could only react with Si completely when the x value is 1.8. Impurities SiC, Ti-Si binary compounds and Ti₈C₅ appeared along the silicon diffusion direction. It is found that the compositions of impurities strongly depended on the Si-concentration. Reaction mechanism of this Ti₃SiC₂ infiltration synthesis has also been discussed based on the Si-concentration changes on the diffusion path.     

立方氮化硼用量及粒度对其同钛铝碳结合剂的反应程度的影响

为研究CBN用量对Ti₃AlC₂结合剂CBN复合材料的影响,使用不同质量配比的Ti3AlC2粉体和CBN粉体通过放电等离子体烧结的方式制备试样,并对比其物相组成和显微形貌。结果表明:当CBN质量分数为10%时,试样的主相为Ti₃AlC₂、CBN和TiC;当CBN质量分数为20%~40%时,生成了TiC、TiN、AlN、TiB₂等物相。另一方面,当CBN质量分数为10%和20%时,CBN表面会形成厚约10 μm的过渡层;当CBN质量分数为30%和40%时,CBN与基体间没有过渡层。若选用粒度尺寸为10 μm的CBN（质量分数为10%）进行烧结,则复合材料中出现许多气孔,基体主相为TiC等轴晶粒且在CBN表面形成厚度1~2 μm的过渡层。CBN质量分数越大或粒度尺寸越小,其同Ti₃AlC₂的反应越充分、过渡层越薄。      

Influence of the C14 Ti35.4V32.3Fe32.3 Laves phase on the hydrogenation properties of the body-centered cubic compound Ti24.5V59.3Fe16.2

Bcc Ti_24.5V_59.3Fe_16.2 alloys containing 10 and 30% of C14 Laves phase inclusions were prepared by induction melting followed by annealing at 1000 °C. X-ray powder diffraction and BSE microscopy confirmed the presence of the C14 Laves phase (average composition Ti_35.4V_32.3Fe_32.3) embedded in the bcc matrix. The two end members of the series, the C14 Laves phase and the bcc Ti_24.5V_59.3Fe_16.2 alloy, have very different hydrogenation behaviors. The C14 Laves phase does not absorb as much hydrogen as does the bcc phase. No equilibrium plateau and little hysteresis between absorption and desorption were observed at 25 °C for the C14 Laves on the PCI curves whereas those of the bcc sample present one equilibrium plateau and significant hysteresis between absorption and desorption. As a result, the absorption capacity and the length of the equilibrium plateau of the multiphase alloys decrease with the C14 Laves phase content. The hydrogenation properties of an as-cast bcc Ti_24.5V_59.3Fe_16.2 sample were also investigated: the kinetics of the first hydrogenation is found to be slower and the plateau pressures higher for the as-cast alloy than for the annealed sample.     

Structure refinement of nonstoichiometric TiS2 (Ti1.083S2)

The structure of high temperature growth Ti_1.083S₂ has been refined carefully from single crystal X-ray data. Deviations from the ideal 1T-Ti_1+xS₂ structure model are very small. However, the possibility of a slight lengthening of the Ti-Ti distance cannot be ruled out. The good accuracy obtained in this study (R = 0.016) indicates that the structure of low-xTi₁₊S₂ materials should be re-examined.     

Unusual devitrification behaviour in rapidly solidified Ti45Zr38Ni17 alloy

In this study, Ti₄₅Zr₃₈Ni₁₇ ribbons have been elaborated using planar flow casting method (v_quenching = 10⁶ K s⁻¹). The rapidly quenched samples, displaying a dispersion of nanoscaled β phase particles in an amorphous matrix, have been extensively characterised using transmission electron microscopy (TEM) and X-ray diffraction (XRD). Devitrification behaviour, investigated by four-probe resistivity measurements and differential scanning calorimetry as well as high resolution TEM analysis, revealed the formation of nanometric quasicrystals (QC) during the first exothermic phase transformation as well as the precipitation of omega domains inside β particles. On the basis of these data, it has been noticed that nanoscaled β metastable particles had adopted the same temperature dependence as β metastable bulk. Furthermore, particular orientation relationships have been observed for QCs in the vicinity of β particles which have suggested probable influence of crystalline structure on the QCs growth, although the presence of such peculiar materials after annealing treatment could be mainly explained by an icosahedral short-range order prevailing in Ti–Zr–Ni melt and favouring their nucleation.