CBN薄膜的IVD法会成

以往研究过用各种气相生长法或反应式真空蒸镀法制作BN薄膜,报道过B、N组成比及高度激活B、N使结晶成长的研究结果。本文介绍用离子照射作为激励方法的效果,以及金属B蒸镀与N离子照射制作BN薄膜的IVD法。 普通的离子束注入技术,在半导体元件     

硼膜多步骤注N的镀层结构研究

用离子束溅射硼靶，在W6o5Cr4V2钢上宙积一层硼膜，再用反冲注入法注氮以形成氮化硼（BN），注入时采用逐次递减能量（即50kV,30keV,10keV0的多步骤注入。用XPS分析膜的成分深度分布及元素的化学价态；用傅立叶红外（FTIR）反射谱分析膜的结构，结果表明：膜基界面产生混合，与用单一能量注入相比，多步骤注入时，膜层的N／B分布比较均匀；硼在膜中以BN形式存在，膜深度较大处为a-BN或h-BN，并且随着深度的降低，膜有向c-BN转化的趋势。     

TiN薄膜的合成及其性能研究

用电子束蒸发沉积钛和40keV氮离子束轰击交替进行的办法合成了TiN薄膜。用RBS,AES,TEM,XPS,和X射线衍射研究TiN薄膜的组分和结构表明:用离子束增强沉积制备的TiN薄膜主要由TiN相构成;晶粒大小为30—40um,无择优取向;而非离子束轰击沉积的薄膜则是无定形的;用离子束增强沉积制备的TiN薄膜,其氧含量明显小于无离子束轰击薄膜的值;在TiN薄膜和衬底之间存在一个界面混合区,厚度为40um左右。机械性能测试表明,TiN薄膜具有高的显微硬度,低的摩擦系数。     

金属基底上IBAD-YSZ缓冲层的生长机理

用离子束辅助沉积(IBAD)方法,变换辅助离子束的能量和束流密度,在Hastelloy基底上制备了钇稳定氧化锆(YSZ)薄膜,作为涂层导体的缓冲层。XRD的结果显示:在一定的离子能量和束流密度的范围内,能够制备出高质量双轴织构的(001)取向的YSZ缓冲层,随着辅助离子束能量和束流密度的增大,IBAD-YSZ的面外取向和面内织构都出现先变好又变坏的现象。文中用辅助离子束对薄膜破坏程度的各向异性对结果做了解释。     

硅烷馈入方式对微晶硅薄膜光发射谱和结构的影响

采用SR500光谱光度计对甚高频等离子体增强化学气相沉积本征微晶硅薄膜过程进行了在线监测,分析了硅烷不同注入方式对等离子体光发射谱和薄膜结构的影响。结果表明,采用硅烷梯度注入时,等离子体中的Hα*、Hβ*和Si H*峰强度逐步升高,且高的Hα*/Si H*比值有利于高晶化率界面层的沉积;这与采用XRD分析薄膜的结构得到的结果一致。选择硅烷梯度注入方式沉积微晶硅薄膜电池本征层,在沉积速率为1 nm/s本征层厚度为2400 nm时,最终获得了光电转换效率为7.81%的单结微晶硅薄膜太阳能电池。     

离子束增强沉积TiN薄膜界面结合强度的研究

利用划痕法测定了离子束增强沉积ＴｉＮ薄膜的界面结合力。结果表明，由于在离子束增强沉积过程中ＴｉＮ薄膜和基体之间生成一层厚约３０￣４０ｎｍ的过渡层，从而大大改善了涂层的界面结合强度，其临界载荷可达１４０Ｎ，为一般ＰＶＤ和ＣＶＤ方法所生成的ＴｉＮ膜的３￣４倍，并且发现它并不随膜厚的增加而变化。     

离子束增强沉积TiN薄膜界面结合强度的研究

采用划痕法测定了离子束增强沉积ＴｉＮ薄膜的界面结合力。结果表明，由于在离子束增强沉积过程中ＴｉＮ薄膜和基体之间生成一层厚约３０～４０ｎｍ的过渡层，从而大大改善了涂层的界面结合强度，其临界载荷可达１４０Ｎ，为一般ＰＶＤ和ＣＶＤ方法所生成的ＴｉＮ膜的３～４倍，并且发现它并不随膜厚的增加而变化。     

离子注入表面改性技术对金属耐蚀性能影响的研究

<正> 利用离子注入技术在金属表面注入耐蚀元素,可显著改善材料的耐蚀性能。氮是提高合金耐孔蚀性能的有效组分。它与合金中铬的综合作用很强。离子束混合可在薄膜基体界面上产生原子级混合,形成新的表面合金层,有利于提高基体金属的耐蚀性。本文采用离子注入技术在奥氏体不锈钢上形成表层含氮合金。通过各种电化学测试     

不同过渡层对DLC薄膜力学性能和摩擦学性能的影响

薄膜与基体间的界面结合性能是决定薄膜性能发挥的关键要素。针对类金刚石薄膜(DLC)在硬质合金上结合力差的问题,采用线性阳极离子束复合磁控溅射技术在硬质合金YG8基体上设计制备了单层W过渡层、WC过渡层、双层W过渡层和三层W过渡层4种不同W过渡层的DLC薄膜,探讨了不同过渡层对DLC薄膜力学和摩擦学性能的影响。结果表明:不同过渡层结构的DLC薄膜结构致密,界面柱状生长随着层数增加及过渡层厚度的降低而打断,有利于改善薄膜的韧性。当为三层W过渡层时,DLC薄膜的断裂韧性达到最大值6.44 MPa·m1/2;与单层W过渡层相比,薄膜硬度有小幅下降,但薄膜内应力降低了55%,且膜/基匹配性更佳,结合强度高达85N,此时薄膜具有较低的摩擦因数和磨损率,表现出比较优异的抗磨减摩性能。     

离子束辅助磁控溅射沉积TiN薄膜的研究

利用三离子束辅助沉积设备，以离子束辅助沉积、磁控溅射和离子束辅助磁控溅射几种工艺在GCr15基体上沉积TiN薄膜。实验结果表明：离子束辅助磁控溅射有效地提高了薄膜的硬度、耐磨性和耐蚀性，改善了膜基结合力。     

PREPARATION OF B-N FILMS BY ION BEAM ASSISTED DEPOSITION

BN films,synthesized by ion beam assisted deposition,were analysed by RBS,AES,IR spectra and TEM.Formatiom of c-BN phase was shown not only by IR spectra atabsorption peak of 1100 cm~(-1),but also by electron diffraction pattern.The results ofAES demonstrate an effect of N~+ implantation near the film surface.The deposited filmsconsist of three layers,i.e.,ion implantation layer,film layer and mixed intermediatelayer,according to the difference of concentration.The micro-Knoop hardness of the film is25—35 GPa.     

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 利用磁过滤阴极电弧镀分别在硬质合金和高速钢基体上沉积厚度约2～3μm的TiN薄膜,并用MEVVA源离子注入装置对TiN薄膜注入金属离子V+和Nb+。应用北京同步辐射装置（BSRF）的同步辐射光源,采用掠入射X射线衍射（GIXRD）的方法对TiN薄膜表面离子注入层的微观结构进行了分析研究。结果表明：未经过离子注入的TiN薄膜均存在特定方向的择优取向,而较小剂量(1×10ˇ17ions/cm2)的离子注入可以使晶粒细化、择优取向减弱或改变;当离子注入的剂量达到5×10ˇ17ions/cm2时,TiN薄膜表面离子注入层被非晶化。结合透射电镜的研究结果,观察到TiN薄膜表面非晶层的厚度约为50～100nm,并简要地讨论了离子注入过程对微观结构的影响机制。     

Influence of nitrogen implantation into HSS substrate on internal stress and adhesion strength of c-BN films

Cubic boron nitride(c-BN) films were deposited on HSS substrate implanted with nitrogen ion by RF-magnetron sputtering. The films were analyzed by bending beam method, scratch test, XRD and AFM. The results show that the implantation of N ion can reduce the internal stress and improve the adhesion strength of the films.The critical load comes to 16.92N, compared to 1.75N of c-BN film on the unimplanted HSS. AFM shows that the surface of the c-BN film on the implanted HSS is low in roughness and small in grain size. The phase structure of the nitrogen implanted layer was analyzed by XRD. The influence of nitrogen implanted layer on the internal stress and adhesion strength of c-BN films were also investigated.     

Phase evolution of tantalum nitride and tantalum carbide films with PBII parameters

Tantalum nitride and tantalum carbide films were fabricated using magnetron sputtering of tantalum followed by nitrogen and carbon plasma-based ion implantation (N-PBII and C-PBII). The phase evolution and morphology of the films were studied using glancing angle X-ray diffraction (GXRD) and transmission electron microscopy (TEM). It was found that the main phase in the tantalum nitride films was crystalline TaN_0.1 whose grain size increases with increasing implantation voltage and phase content increases with increasing implantation dose. In the tantalum carbide film, the main phase was Ta₂C. TaC phase also appeared as the implantation dose increased. XRD results from various glancing angles show that the phases with high nitrogen or carbon content, Ta₄N₅ and TaC, are present in the surface of the films. X-ray photoelectron spectra (XPS) from the tantalum carbide film reveal that the surface carbon content is higher than that of the inner film.     

Structure and properties of amorphous diamond-like carbon films produced by ion beam assisted plasma deposition

The microstructure and tribological properties of carbon film produced by ion beam assisted plasma deposition in a plasma source ion implantation (PSII) chamber with energies varied from 0 to 30 keV are examined. The process is illustrated schematically, and Raman spectra as well as TEM images and corre-sponding diffraction patterns of carbon films are shown.     

Properties of Zr-ZrC-ZrC/DLC gradient films on TiNi alloy by the PIIID technique combined with PECVD

The Zr-ZrC-ZrC/DLC gradient composite films were prepared on TiNi alloy by the techniques combined plasma immersion ion implantation and deposition (PIIID) and plasma enhanced chemical vapor deposition (PECVD). With this method, the Zr-ZrC intermixed layers can be obtained by the ion implantation and deposition before the deposition of the ZrC/DLC composite film. In our study, an optimal gradient composite film has been deposited on the NiTi alloys by optimizing the process parameters for implantation and deposition. The surface topography was observed through AFM and the influence of the deposition voltage on the surface topography of the film was investigated. XPS results indicate that on the outmost layer, the Zr ions are mixed with the DLC film and form ZrC phase, the binding energy of C 1s and the composition concentration of ZrC depend heavily on the bias voltage. With the increase of bias voltage, the content of ZrC and the ratio of sp³/sp² firstly increases, reaching a maximum value at 200 V, and then decreases. The nano-indentation and friction experiments indicate that the gradient composite film at 200 V has a higher hardness and lower friction coefficient compared with that of the bare NiTi alloy. The microscratch curve tests indicate that gradient composite films have an excellent bonding property comparing to undoped DLC film. Based on the electrochemical measurement and ion releasing tests, we have found that the gradient composite films exhibit better corrosion resistance property and higher depression ability for the Ni ion releasing from the NiTi substrate in the Hank's solution at 37°C.     

SURFACE MODIFICATION OF TITANIUM FILMS WITH SODIUM ION IMPLANTATION： SURFACE PROPERTIES AND PROTEIN ADSORPTION

Sodium implanted titanium films with different ion doses were characterized to correlate their ion implantation parameters. Native titanium films and ion implanted titanium films were characterized with combined techniques of X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and light microscopy (LM). The surface presented increased sodium concentration on treated titanium films with ion dose increasing, except for the group with the highest ion dose of 4× 1017 ions/cm2. XPS depth profiling displayed that sodium entered titanium film around 25-50 nm depth depending on its implantation ion dose. AFM characterization showed that sodium ion implantation treatment changed the surface morphology from a relatively smooth titanium film to rough surfaces corresponding to different implantation doses.After sodium implantation, implanted titanium films presented big particles with island structure morphology. The surface morphology and particle growth displayed the corresponding trend.Fibrinogen adsorption on these titanium films was performed to correlate with the surface properties of treated titanium films. The results show that protein adsorption on ion-implanted samples with dose of 2 × 1017 and 4 × 1017 are statistically higher (p ＜ 0. 01) than samples treated with dose of 5×1016 and 1 ×1017, as well as the control samples.     

表面处理对PEEK GF30磁控溅射镀Cu金属化的影响

目的 赋予基材PEEKGF30良好的导电性。方法 以磁控溅射镀膜技术在表面沉积Cu膜。分别采用离子注入和等离子体活化两种技术对基材进行界面处理,通过接触角测试、红外光谱测试和界面微观形貌观察,与原始基材展开表面状态对比。再在此基础上进行金属化处理,并对3种不同界面状态下所制膜层的相结构、表面及断口形貌和成分、膜基结合强度进行判定和分析,探讨界面状态的影响因素以及对膜基结合性能的作用机理。结果 注入金属Ti后,表面Ti含量得到了有效提高,但表面润湿性能无明显改变,活化处理后表面极性基团增加、润湿性能大幅提升,为镀膜提供了良好的界面状态。在原始状态、注入和活化后3种不同界面状态下制备的Cu膜均沿Cu(225)择优生长,活化后所制膜层的结晶度最优。原始状态下所制膜层平整性欠佳、膜基交界处异种材料差异明显,涂层附着力保持为5级,结合力<0.1 N;注入后所制膜层平整致密,交界处有Ti微粒产生“锚扎”强化效果,涂层附着力保持为1级,结合力<0.1N;活化后所制膜层规则均匀,交界处出现缓冲层,金属微粒“锚扎”强化深度和强度效果最佳,涂层附着力保持为0级,结合力提升至15.45 N。结论...     

壁垒型铝阳极氧化膜的成份及电解质离子在膜中的漂移

讨论了俄歇能谱仪分析壁垒型铝阳极氧化膜成份的一些技术问题。配合氩离子溅射深度成份分析、离子注入标记氙原子、膜剖面超薄切片的透射电子显微镜观察,证实了壁垒型阳极氧化膜一般由内、外两层组成。外层是向膜外迁移的铝离子在膜与电解质溶液的界面上形成的;内层则是向膜内迁移的含氧离子在膜与基体界面上形成的。电解质溶液的离子会结合在膜中,并在电场影响下发生漂移。测出了存选定的实验条件下,膜中电解质离子的平均漂移速度。     

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 利用MeVVA离子源技术对阴极磁过滤真空弧沉积的TiAlN薄膜进行了不同注入剂量的Nb及Nb+C离子注入。采用EDS、TEM、GIXRD、显微硬度等测试方法研究了离子注入剂量对于薄膜微观结构和性能的影响。结果表明,注入剂量为Nb5×1017 ions/cm2+C5×1017 ions/cm2时,Nb在TiAlN薄膜内的注入投影射程为130nm;在薄膜表层形成厚度约50nm的非晶与纳米晶的复合结构;在次表层,晶粒发生局部扭曲变形。随着离子注入剂量的增加,薄膜与基底的复合硬度由HV1900增加到HV3000,在高剂量离子注入条件下,薄膜的硬度提升更为显著。