共查询到20条相似文献,搜索用时 109 毫秒
1.
2.
利用微波等离子体化学气相沉积法在不锈钢衬底上直接合成非晶碳和碳纳米管混合薄膜.采用氢气和甲烷作为反应气体,流量分别为100和16sccm.沉积室内的压强为5.0kPa.利用场发射扫描电镜(SEM)和喇曼谱(Raman)对制备的薄膜的结构和形貌进行了分析.场发射实验在5×10-5Pa的真空下进行.实验结果表明:制备的非晶碳和碳纳米管混合薄膜开启电场较低,仅有0.9V/μm;在电场为3.7V/p.m时电流密度达到4.0mA/cm2,发射点密集,分布均匀.表明此种材料是一种优良的场发射冷阴极材料. 相似文献
3.
非晶碳和碳纳米管混合薄膜的场发射性能 总被引:2,自引:2,他引:0
利用微波等离子体化学气相沉积法在不锈钢衬底上直接合成非晶碳和碳纳米管混合薄膜.采用氢气和甲烷作为反应气体,流量分别为100和16sccm.沉积室内的压强为5.0kPa.利用场发射扫描电镜(SEM)和喇曼谱(Raman)对制备的薄膜的结构和形貌进行了分析.场发射实验在5×10-5Pa的真空下进行.实验结果表明:制备的非晶碳和碳纳米管混合薄膜开启电场较低,仅有0.9V/μm;在电场为3.7V/p.m时电流密度达到4.0mA/cm2,发射点密集,分布均匀.表明此种材料是一种优良的场发射冷阴极材料. 相似文献
4.
碳纳米管(CNT)作为场发射冷阴极材料被应用于真空微纳电子器件.如何获得低电场发射和稳定发射,是碳纳米管冷阴极在器件中应用需要解决的问题.选择类金刚石(DLC)薄膜,利用磁过滤真空弧等离子技术产生DLC薄膜,对碳纳米管表面进行镀膜处理.场发射实验表明,经DLC薄膜处理后的碳纳米管冷阴极的场发射开启电场强度由3.3 MV/m下降至1.9 MV/m,相应的阈值电场强度也从6.5 MV/m下降至5.3 MV/m,并且在场发射性能提高的同时场发射的均匀性没有受到影响.DLC膜处理可以作为一种改善碳纳米管冷阴极场发射特性的技术. 相似文献
5.
6.
7.
8.
以镍金属为催化剂,在600℃条件下,采用化学气相沉积法(CVD)制备碳纳米管。将制得的碳纳米管用高能球磨法处理0.5~1h后,以空气氧化法进行提纯,并研究了氧化温度对碳纳米管形貌和场发射性能的影响。用扫描电镜、Raman光谱分别对300~500℃的氧化提纯后的碳纳米管的形貌和结构进行了表征。结果表明:碳纳米管的场发射性能随温度的升高而升高,经400~450℃加热10min后,非晶碳成分减少,碳管纯度得到提高,场发射性能达到最高;当氧化温度继续升高时,碳纳米管的缺陷密度增大,非晶化程度增加,场发射特性变差。因此,通过控制氧化温度可以有效提高碳纳米管的纯度和场发射性能。 相似文献
9.
将石墨衬底浸泡于0.5mol/LNi(NO3)2溶液中一段时间,之后利用低压化学气相沉积法在不同温度的条件下生长碳纳米管薄膜。研究了碳纳米管的生长温度对其场发射性能的影响。通过扫描电子显微镜和拉曼光谱对生长的碳纳米管薄膜的表征发现,随着碳纳米管的生长温度的增加,碳纳米管的直径与相应拉曼光谱中的G峰和D峰(ID/IG)的峰强比减小。同样,碳纳米管的G峰的半峰宽随着碳纳米管的生长温度的增加而减小,这表明碳纳米管的石墨化程度的增强。实验中发现,碳纳米管的场发射性能依赖于碳纳米管的生长温度。 相似文献
10.
利用脉冲电化学沉积技术,以NiSO4·6H2O为电镀液在镀Cr硅基片上沉积低密度、直径在150nm左右的Ni催化剂颗粒,在此基础上,采用乙炔、氨气作为气源,采用等离子体增强化学气相沉积(PECVD)技术制备分散定向的碳纳米管阵列。研究了等离子体预处理技术对纳米管制备的影响以及该阵列的场发射性能,证明低密度的碳纳米管阵列阴极能有效地降低场屏蔽效应,进而提高场发射性能,其场发射的开启电场强度约为2.39V/μm。 相似文献
11.
M. Dubosc S. Casimirius C. Cardinaud J.-L. Duvail T. Minéa J. Torres 《Microelectronic Engineering》2007,84(11):2501-2505
This article reports on carbon nanotubes (CNT) grown on TiN/Cu stacks by plasma enhanced chemical vapor deposition (PECVD) at 450 °C. Ni catalyst was deposited by two techniques - physical vapor deposition (PVD) and electrochemical deposition (ECD). First, the influence of the catalyst thickness and the catalyst deposition technique on grown CNTs is investigated. Second, the enhancement of the CNTs growth by use of electrodeposited catalysts is emphasized. 相似文献
12.
13.
提出了一种新的用于加速130nm以下工艺交替式相移掩模设计流程的版图划分方法,该方法能够自适应调整版图划分的粒度.讨论了消除相位冲突的方法和版图压缩中相位兼容性保持的策略.利用上述算法实现的CAD原型系统经多个工业界例子的测试表明能够有效地适应随版图尺寸而快速增长的相位冲突复杂性,同时提供较好的PSM设计质量,并能满足不同求解精度和加速比的要求. 相似文献
14.
针对等离子增强化学气相沉积(PECVD)方法低温(60℃)生长氧化硅(SiOx)薄膜中存在的针孔缺陷,在SiOx薄膜上采取原子层沉积(ALD)方法生长氧化铝(AlOy),利用ALD方法材料保形生长的特点,进行SiOx薄膜的针孔缺陷修复工艺技术研究。实验结果表明:在SiOx薄膜上利用ALD方法保形生长氧化铝,可以明显降低AlOy/SiOx复合薄膜的水汽渗透率,提高薄膜封装性能。通过实验数据分析认为:复合薄膜的水汽阻隔能力是由于ALD方法及PECVD方法两种薄膜生长方法的综合作用,这种综合作用很有可能来自PECVD方法薄膜中针孔缺陷的修复,而ALD方法正是完成修复过程的技术手段。另外,ALD方法的工艺参数与针孔缺陷的修复效果相关,ALD生长周期时间延长,有利于提高针孔缺陷的修复效果,从而降低了复合薄膜的水汽渗透率。 相似文献
15.
E. Sleeckx M. Schaekers X. Shi E. Kunnen B. Degroote M. Jurczak M. de Potter de ten Broeck E. Augendre 《Microelectronics Reliability》2005,45(5-6):865
This paper gives some insights in the applications where PECVD nitrides can be introduced to replace the LPCVD layers and how the process parameters need to be varied to obtain the desired properties. Film properties like stress, hydrogen content, wet etch rate and deposition rate are reported. The nitrides are optimized for specific applications and examples on the influence of nitride properties on device performance are given. It is important to investigate that the advantage of the high film integrity of nitride layers used in the past is not lost due to the strong demand for developing new process schemes with low thermal budget layers. We show that PECVD films are a valid alternative for LPCVD and that the majority of the film properties satisfy the criteria to use PECVD films as contact-etch-stop layers, silicidation blocking films and spacer materials. 相似文献
16.
Sub‐Nanometer Level Size Tuning of a Monodisperse Nanoparticle Array Via Block Copolymer Lithography
Dong Ok Shin Duck Hyun Lee Hyoung‐Seok Moon Seong‐Jun Jeong Ju Young Kim Jeong Ho Mun Heesook Cho Soojin Park Sang Ouk Kim 《Advanced functional materials》2011,21(2):250-254
The fabrication and catalytic application of a size‐tunable monodisperse nanoparticle array enabled by block copolymer lithography is demonstrated. Highly uniform vertical cylinder nanodomains are achieved in poly(styrene‐block‐4‐vinylpyridine) (PS‐b‐P4VP) diblock copolymer thin‐films by solvent annealing. The prominent diffusion of the anionic metal complexes into the protonated P4VP cylinder nanodomains occurs through specific electrostatic interactions in a weakly acidic aqueous solution. This well‐defined diffusion with nanoscale confinement enables preparation of the laterally ordered monodisperse nanoparticle array with sub‐nanometer level precise size tuning. The controlled growth of monodisperse nanoparticle arrays is proven by their catalytic use for vertical carbon nanotube (CNT) growth via plasma enhanced chemical vapor deposition (PECVD). Since the size of the catalyst particles is the decisive parameter for the diameters and wall‐numbers of CNTs, the highly selective growth of double‐walled or triple‐walled CNTs could be accomplished using monodisperse nanoparticle arrays. 相似文献
17.
Dong Ok Shin Duck Hyun Lee Hyoung‐Seok Moon Seong‐Jun Jeong Ju Young Kim Jeong Ho Mun Heesook Cho Soojin Park Sang Ouk Kim 《Advanced functional materials》2011,21(2):201-201
The fabrication and catalytic application of a size‐tunable monodisperse nanoparticle array enabled by block copolymer lithography is demonstrated. Highly uniform vertical cylinder nanodomains are achieved in poly(styrene‐block‐4‐vinylpyridine) (PS‐b‐P4VP) diblock copolymer thin‐films by solvent annealing. The prominent diffusion of the anionic metal complexes into the protonated P4VP cylinder nanodomains occurs through specific electrostatic interactions in a weakly acidic aqueous solution. This well‐defined diffusion with nanoscale confinement enables preparation of the laterally ordered monodisperse nanoparticle array with sub‐nanometer level precise size tuning. The controlled growth of monodisperse nanoparticle arrays is proven by their catalytic use for vertical carbon nanotube (CNT) growth via plasma enhanced chemical vapor deposition (PECVD). Since the size of the catalyst particles is the decisive parameter for the diameters and wall‐numbers of CNTs, the highly selective growth of double‐walled or triple‐walled CNTs could be accomplished using monodisperse nanoparticle arrays. 相似文献
18.
19.
20.
采用射频等离子体增强化学气相沉积法(RF-PECVD),以Ni/MgO为催化剂,在Si基片上生长了碳纳米管,采用X射线衍射(XRD)、扫描电镜(SEM)、Raman光谱以及高分辨透射电镜(HRTEM)等对不同的MgO含量下制备的碳纳米管形貌及结构进行了表征。结果表明,随着MgO含量的增加,从碳纳米洋葱转化为碳纳米管,其直径逐渐变小、均匀,碳纳米管纯度提高,结晶性能越好;碳纳米管顶端形成开口或闭口的碳洋葱纳米结构,而管的主干区域则存在催化剂,并且随着MgO含量的增加,呈现纳米颗粒转化为纳米线的趋势;MgO含量为50%时,部分碳纳米管的外壁剥离,形成了单原子石墨层,长度达到7nm,并在碳纳米管内部填充了Ni纳米线,其长度有60nm。 相似文献