角度限制散射投影电子束光刻

角度限制散射投影电子束光刻（SCALPEL）采用并行投影技术,具有分辨率高、曝光范围大的特点,可望获得远比电子束直写光刻高的产量。本文介绍了SCALPEL的原理、特点及该技术的研究进展情况。     

PREVAIL--下一代电子束投影曝光技术

PREVAIL作为下一代电子束投影曝光技术，采用可变轴浸没透镜，对以硅为支架的碳化硅薄膜进行投影微缩曝光。在1mm^2子场的情况下，运用步进扫描曝光方式，在100nm临界尺寸下具有较高的产量，也EUVL技术一起成为下一代曝光技术的有力竞争者。     

缩小投影电子束曝光系统的成像反差

结合原理说明了理想条件下的照明束与角度限制光阑可获得最佳成像反差，详细讨论了照明束与角度限制光阑处于非理想情况时对成像反差的影响及理想条件的调试方法。     

电子束曝光技术及其应用综述

综述了几种目前已得到应用和正在发展中的电子束曝光技术,包括基于扫描电镜(SEM)电子束、高斯电子束、成型电子束和投影电子束曝光技术等,并分析比较了这些技术各自的特点、应用及发展前景.     

电子束投影曝光装置实验结果分析

主要介绍了电子束缩小投影曝光机的工作原理及其特点，针对在原理论证机上做的实验，着重分析讨论了聚光镜电流的大小对曝光结果的影响。     

电子束缩小投影曝光系统的掩模研究

介绍了用于电子束投影曝光系统中薄膜加散射体掩模的制备、性能和使用情况。     

高能电子束纳米曝光系统的研制

微电子产业的飞速发展要求半导体器件的最小特征尺寸越来越小。传统的光学光刻技术由于受到光的衍射等限制，开始面临挑战。电子束曝光技术具有高分辨、长焦深、无需掩模等优点，成为下一代光刻技术中极具发展潜力的一种。     

电子束纳米光刻技术研究

纳米光刻技术在微电子制作中起着关键作用，而电子束光刻在纳米光刻技术制作中是最好的方法之一。我们使用VB5电子束曝光系统，经过工艺研究，现已研究出最细分辨率剥离金属条为17nm，最小剥离电极间距为10nm，最细T型栅为100nm。     

电子束纳米光刻技术研究

纳米光刻技术在微电子制作中起着关键作用,而电子束光刻在纳米光刻技术制作中是最好的方法之一.我们使用VB5电子束曝光系统,经过工艺研究,现已研究出最细分辨率剥离金属条为17nm,最小剥离电极间距为10nm,最细T型栅为100nm.     

电子束纳米光刻技术研究

纳米光刻技术在微电子制作中起着关键作用 ,而电子束光刻在纳米光刻技术制作中是最好的方法之一。我们使用VB5电子束曝光系统 ,经过工艺研究 ,现已研究出最细分辨率剥离金属条为 17nm ,最小剥离电极间距为 10nm ,最细T型栅为 10 0nm。     

电子束光刻技术的原理及其在微纳加工与纳米器件制备中的应用

电子束光刻是微电子技术领域重要的光刻技术之一,它可以制备特征尺寸10nm甚至更小的图形.随着电子束曝光机越来越多地进入科研领域,它在微纳加工、纳米结构的特性研究和纳米器件的制备等方面都呈现出重要的应用价值.本文以几种常见的电子束曝光机为例,说明电子束光刻的工作原理和关键技术,并给出一些它在纳米器件和微纳加工方面的应用实例.     

电子束光刻中邻近效应校正的几种方法

本文简要介绍了限制电子束光刻分辨率的主要因素之一-邻近效应的产生机制,列举了校正邻近效应的GHOST法、图形区密集度分布法和掩模图形形状改变法,介绍了每种方法的原理、步骤和效果,比较了它们各自的优缺点.     

化学放大胶在电子束光刻技术中的应用

化学放大胶(ChemicallyAmplifiedResists,简称CARs)是下一代光刻技术中极具发展潜力的一种光学记录介质。介绍了化学放大胶在电子束光刻技术中图形制作工艺的关键步骤以及目前常用的几种化学放大胶,分析了将化学放大胶用于电子束曝光工艺应注意的问题和它将来的发展趋势。     

A method to restrain the charging effect on an insulating substrate in high energy electron beam lithography

Pattern distortions caused by the charging effect should be reduced while using the electron beam lithography process on an insulating substrate. We have developed a novel process by using the SX AR-PC 5000/90.1solution as a spin-coated conductive layer, to help to fabricate nanoscale patterns of poly-methyl-methacrylate polymer resist on glass for phased array device application. This method can restrain the influence of the charging effect on the insulating substrate effectively. Experimental results show that the novel process can solve the problems of the distortion of resist patterns and electron beam main field stitching error, thus ensuring the accuracy of the stitching and overlay of the electron beam lithography system. The main characteristic of the novel process is that it is compatible to the multi-layer semiconductor process inside a clean room, and is a green process, quite simple, fast, and low cost. It can also provide a broad scope in the device development on insulating the substrate,such as high density biochips, flexible electronics and liquid crystal display screens.     

弹性散射截面对计算电子束投影成像衬度的影响

我们采用蒙特卡洛方法模拟了100keV电子通过W／Cr／Si3N4掩膜的透射率。发现在此高能量下,电子弹性散射的Mott截面与经典的Rutherford截面仍有较大差异。由于这两种总截面和小角散射的微分截面不同,因此采用何种截面将直接影响限角散射电子束投影成像的模拟结果。本文通过比较电子透射的实验测量和模拟计算结果,确认了使用Mott截面的必要性。     

Calibration algorithms for an electron beam metrology system

This paper discusses the general deflection system calibration problem that occurs in electron beam lithography and metrology systems.These systems generally have an X, Y stage whose position can be measured, but not set to a high degree of accuracy.The calibration problem involves aligning the coordinate system associated with electron beam deflection system to that of the X, Y stage, and measuring the deflection system sensitivity.Current commercially available examples of these systems include the Cambridge Instruments EBMF-6 electron beam lithography system and the EBMT-5 electron beam metrology system.     

图形改正方法在邻近效应修正中的应用

本文利用双高斯形式的邻近函数来表达电子束在抗蚀剂中能量的分布,并以邻近函数为基础计算一些简单图形在曝光时所需的尺寸改变量.通过与实验的比较来说明该方法的可靠性,并对所得结果进行讨论和分析.     

DESIGN AND PERFORMANCE OF SHAPING DEFLECTORS FOR VARIABLY SHAPED ELECTRON BEAM LITHOGRAPHY

In order to obtain uniform exposure in variably shaped electron beam lithography,the beam current density and edge resolution on the target must not change for different spotshapes and sizes.The key to the goal is the appropriate design of shaping deflectors.A linearand rotation compensation approach is presented.Values of linear and rotation compensationfactors versus the distances between electron source image and centers of deflectors are measuredon an experimental electron beam column with variable spot shaping.The experimental resultsare in good agreement with the calculated ones.     

Spray coating of PMMA for pattern transfer via electron beam lithography on surfaces with high topography

Spray coating of polymethylmethacrylate (PMMA) as electron beam resist on non planar surfaces is presented as a reliable technique for deposition of uniform resist layers with adjustable thickness at wafer scale. In the experiments a commercial spray coating system with an ultrasonic spray nozzle was used. Parameters which influence the quality of the resist layer with respect to uniformity across a 4 in Si wafer, such as ultrasonic power and dispensed volume, were evaluated. The suitability of spray coated PMMA for the pattern transfer on surfaces with high topography was proven by PMMA spray coating of 8 μm deep trenches etched into Si wafers. The PMMA was then electron beam exposed and chromium line patterns were transferred on the Si surface via a lift-off process.