Photoluminescence enhancement of quantum dots with photonic structures

Photoluminescence (PL) of CdSe/ZnS quantum dots (QDs) deposited on Si and photonic crystals with packed silica spheres, are investigated with the purpose of establishing enhancement of PL. Quantum dots with size ～2.4 nm are introduced into the solution containing silica spheres of ～345 nm size. Upon evaporation, QDs are incorporated into the photonic crystals made of close-pack spheres. We found that PL is red- or blue-shifted (from interaction with molecular complexes) with increase of QD-density. The broad PL emission is partly from particle size distribution, but mainly due to the interaction with local molecular complexes with surface quantum size effects. We have also observed enhanced interaction when the emission is close to the photons at the Brillouin zone boundary.     

Synthesis and characterization of gallium nitride nanoparticles by using solvothermal-soft-chemical methodology

GaN nanoparticles have been synthesized by solvothermal method. Gallium acetyl-acetonate and ammonium acetate were mixed in stoichiometry conditions. The reaction was induced in different solvents such as ethanol, ethylene glycol, propanol and benzene. The as-prepared materials were heat-treated from 240 to 950 °C. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) put in evidence that the resulting intrinsic-structure is highly linked with the solvent in turn and with temperature. It was found that wurzite phase is reached at 950 °C with benzene as a solvent; with surface area of 50 m² g⁻¹, measured by nitrogen physisorption. In addition, well-defined GaN-nanoparticles were determined using SEM–EDS and HRTEM for a diffraction-selected area (SAED). Moreover, optical properties obtained by using photoluminescence (PL) spectroscopy indicated a well crystal-definition from bands at 2.85 and 3.0 eV related with structural defects. GaN deposited onto an ITO substrate induced a more cathodic current corresponding to hydrogen evolution compared with ITO free of GaN in neutral conditions.     

Raman spectra of CdTe/ZnTe self-assembled quantum dots

In this paper, we present Raman scattered spectra and results of photoluminescence (PL) measurements of CdTe/ZnTe self-assembled quantum dots (SAQD). The PL spectrum displayed two main emission peaks, both connected with the existing of QDs. One presents direct deexcitation to ground state and the other is optical phonon (ω=204.2 cm^?1)-assisted deexcitation. The registered multiphonon (MP) emission process depends on temperature. At low temperature, one-phonon spectra shows line at 200.4 and 210.3 cm^?1 (ZnTe LO mode confined by degenerate superlattices), 217 cm^?1 (TA+LO in ZnTe) and 386 cm^?1 (LO+TO(Γ) in ZnTe).     

Colloidal quantum dot active layers for light emitting diodes

In this paper the preliminary results of incorporating a novel active layer into a GaN light emitting diode (LED) are discussed. Integration of colloidal CdSe quantum dots into a GaN LED active layer is demonstrated. Properties of p-type Mg doped overgrowth GaN are examined via circular transmission line method (CTLM). Effects on surface roughness due to the active layer incorporation are examined using atomic force microscopy (AFM). Electroluminescence of LED test structures is reported, and an ideality factor of n = 1.6 is demonstrated.     

Study of thiol capped CdSe quantum dots using SeO2 precursor for selenium source

CdSe quantum dots in aqueous medium using thioglycollic acid as capping agent have been synthesized. The reaction was carried out in an open atmosphere at pH of 12 and refluxed at 100 °C for 8 h. Selenium dioxide which is less expensive and less toxic has been used as a precursor for selenium source by replacing Se powder and sodium selenite. For characterization QD solutions was taken at different time intervals ranging from 15 min to 6 h. UV–Vis spectroscopy shows that there is a strong blue shift in the prepared quantum dots due to quantum confinement effect. Band gap calculated at different time intervals lies between 2.34 and 2.73 eV which is more than the bulk band gap 1.74 eV and with the increase in size of the QDs, bandgap also decreases. Photoluminescence study was carried out at excitation wavelength of 350 nm and results shows that with increase in time the peak position shift toward higher wavelength. FTIR spectroscopy shows peaks of thioglycollic acid. SEM micrographs of the prepared quantum dots show zero dimensional spherical particles in nm range. For electrical conductivity dc conductivity measurement has been done which shows that with increase of temperature conductivity increases, it confirms the semiconducting nature of the quantum dot. Conduction mechanism found to be mainly due to localized states.     

Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy

GaN freestanding substrate was obtained by hydride vapor phase epitaxy directly on sapphire with porous network interlayer. The morphologies of Ga-face and N-face of freestanding GaN substrate were analyzed by a variety of characterization techniques before and after etching in boiled KOH for 1 min. The obtained characteristics of unetched GaN are strongly dependent on the growth polarity. The N-polar GaN layer has high free electron, impurity and point defect concentrations. In the layers grown on the (0 0 0 1) Ga-polar side, these concentrations are very low. After etching, the Ga-polar GaN has identical properties to those of the unetched Ga-polar GaN layer. But the etched N-polar GaN has significant difference with unetched N-polar GaN layer in structure and optical properties. The etched N-polar GaN has a smaller (0 0 0 2) DCXRD width (646″) than the unetched N-polar GaN (1351″). The optical quality of etched N-polar GaN is comparable with that of Ga-polar GaN, and the FWHMs of the D⁰X line of Ga-face and etched N-face are 9.3 and 12.8 meV, respectively. The LPP mode in the Raman spectra and FERB peak in PL spectra were used to analyze the free carrier concentration of two sides of etched and unetched freestanding GaN substrate.     

Investigation of deep level defects in electron irradiated indium arsenide quantum dots embedded in a gallium arsenide matrix

Gallium arsenide diodes with and without indium arsenide quantum dots were electron irradiated to investigate radiation induced defects. Baseline and quantum dot gallium arsenide pn-junction diodes were characterized by capacitance–voltage measurements, and deep level transient spectroscopy. Carrier accumulation was observed in the gallium arsenide quantum dot sample at the designed depth for the quantum dots via capacitance–voltage measurements. Prior to irradiation, a defect 0.84 eV below the conduction band (E_C – 0.84 eV) was observed in the baseline sample which is consistent with the native EL2 defect seen in gallium arsenide. After 1 MeV electron irradiation three new defects were observed in the baseline sample, labeled as E3 (E_C – 0.25 eV), E4 (E_C – 0.55 eV), and E5 (E_C – 0.76 eV), consistent with literature reports of electron irradiated gallium arsenide. Prior to irradiation, the addition of quantum dots appeared to have introduced defect levels at E_C – 0.21, E_C – 0.38, and E_C – 0.75 eV denoted as QD–DX1, QD–DX2, and QD–EL2 respectively. In the quantum dot sample after 1 MeV electron irradiation, QD–E3 (E_C – 0.28 eV), QD–E4 (E_C – 0.49 eV), and QD–EL2 (E_C – 0.72 eV) defects, similar to the baseline sample, were observed, although the trap density was dissimilar to that of the baseline sample. The quantum dot sample showed a higher density of the QD–E4 defect and a lower density of QD–E3, while the QD–EL2 defect seemed to be unaffected by electron irradiation. These findings suggest that the quantum dot sample may be more radiation tolerant to the E3 defect as compared to the baseline sample.     

Defect characterization of Tl4GaIn3Se2S6 layered single crystals by photoluminescence

Photoluminescence (PL) spectra of Tl₄GaIn₃Se₂S₆ layered crystals grown by the Bridgman method have been studied in the energy region of 2.02–2.35 eV and in the temperature range of 16–45 K. A broad PL band centered at 2.20 eV was observed at T=16 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.1 to 149.9 mW cm⁻² range. Radiative transitions from shallow donor level located at 10 meV below the bottom of conduction band to moderately deep acceptor level located at 180 meV above the top of the valence band were suggested to be responsible for the observed PL band. An energy level diagram showing transitions in the band gap of the crystal was plotted taking into account the results of present work and previously reported paper on thermally stimulated current measurements carried out below room temperature. Analysis of the transmission and reflection measurements performed in the wavelength range of 400–1030 nm at room temperature revealed the presence of indirect transitions with 2.22 eV band gap energy.     

A comparative study of electrical and optical properties of InN and In0.48Ga0.52N

We present results of our studies concerning electrical and optical properties of In_0.48Ga_0.52N and InN. Hall measurement were carried out at temperatures between T=77 and 300 K. Photoluminescence (PL) spectrum in InN and In_0.48Ga_0.52N. InN has a single peak at 0.77 eV at 300 K. However, the PL in In_0.48Ga_0.52N has two peaks; a prominent peak at 1.16 eV and a smaller peak at 1.55 eV. These two peaks are attributed to Indium segregation corresponding to a high Indium concentration of 48% and a low concentration of 36%. High electric field measurements indicate that drift velocity that tends to saturate at around V_d=1.0×10⁷ cm/s at 77 K in InN at an electric field of F=12 kV/cm. However, in In_0.48Ga_0.52N the I–V curve is almost linear up to an electric field of F=45 kV/cm, where the drift velocity is V_d=1.39×10⁶ cm/s. At applied electric fields above this value a S-type negative differential resistance (NDR) is observed leading to an instability in the current and to the irreversible destruction of the sample.     

Use of a sulfur waste for biosynthesis of cadmium sulfide quantum dots with Fusarium oxysporum f. sp. lycopersici

After hydrodesulfurization of Mexican oil's sour acid gases, a sulfur toxic waste is recovered, we used it to synthesize cadmium sulfide quantum dots, which have been recently studied due to their optical (high photostability, high quantum yield and fluorescence) and catalytic properties. Increased demand of cadmium sulfide quantum dots has led to research of new synthesis methods that with higher yields, increased control over particle diameter, that produce hydrophilic quantum dots -as most of them are obtained in organic solvents- and that are environmentally friendly because most methods employ toxic materials or involve a high energy consumption. This study attempted to synthesize hydrophilic cadmium sulfide quantum dots using an environmentally friendly method with a fungus capable of transforming a dangerous waste into a high-value-added product. Mycelia of Fusarium oxysporum f. sp. lycopersici were incubated with 1 mM cadmium nitrate and 1% (w/v) sulfur waste at 30 °C for 24 h, then the biomass was separated through paper filtration. The filtrate became yellow indicating presence of extracellular cadmium sulfide quantum dots, as was confirmed by increased UV–vis absorption around 300 nm and fluorescence at 510 nm. The biomass of Fusarium oxysporum f. sp. lycopersici produced after 24 h, extracellular stable, hydrophilic and biocompatible cadmium sulfide quantum dots from a sulfur dangerous waste. Biosynthesized quantum dots were circular with diameter of 6.116±2.111 nm and had a wurtzite crystalline structure.     

The excellent spontaneous ultraviolet emission of GaN nanostructures grown on silicon substrates by thermal vapor deposition

In this study, GaN nanostructures were grown on p-Si (111) substrate by thermal chemical vapor deposition (TCVD). Ga vapor directly reacted with NH₃ solution in N₂ carrier gas flow of 2 L/min at different temperatures (950–1050 °C). The influence of NH₃ solution and growth temperature on the morphology, structure, optical and photoresponse properties of GaN nanostructures was investigated. Scanning electron microscopy images showed that the densities of the NWs varied with increasing temperature. The use of NH₃ solution and increased growth temperature improved the crystalline quality of GaN nanostructures. The photoluminescence (PL) spectra of nanostructures displayed a near band-edge (NBE) emission at around 363–367 nm. Higher growth temperature (1050 °C) resulted in a strong NBE emission with no yellow emission peak. With +5 V applied bias, the NWs metal–semiconductor–metal UV photodetector exhibited a high photocurrent of 1.6×10⁻³ A. The photocurrent to dark current contrast ratio was 120.     

Metalorganic vapor phase epitaxy growth and properties of GaAs/AlGaAs and InGaAs/GaAs quantum well structures on (111)A GaAs substrates

We review the recent advances in the fabrication and properties of GaAs/AlGaAs and InGaAs/GaAs quantum well (QW) structures grown on (111)A GaAs substrates by atmospheric pressure metalorganic vapor phase epitaxy (MOVPE). We show that a 25-period GaAs/AlGaAs multi-QW (MQW) structure was fabricated with good crystal quality, high photoluminescence (PL) emission intensity and monolayer (ML) interfacial roughness. A PL full width at half maximum (FWHM) of 10.5 meV was achieved for a 25-period MQW with a well width of 44 Å. This is the narrowest linewidth reported to date for any similar structures grown on (111)A or B substrates by any growth technique. We also report the properties of an InGaAs/GaAs single quantum well structure grown on (111)A GaAs. For this structure, the PL FWHM value was 9.1 meV, corresponding to a 1 ML interfacial roughness for a well width of 41 Å. This is the first demonstration of an InGaAs/GaAs quantum well structure grown on (111)A or (111)B GaAs by MOVPE.     

Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature

Selenium-hyperdoped silicon was prepared by ion implantation at 100 eV to a dose of 6×10¹⁵ Se/cm², followed by furnace annealing at 500–900 °C for 30 min. A phase transition from amorphous to crystalline was observed for the sample annealed at 600 °C. Carrier density in the Se doping layer gradually increases with the annealing temperature and a high carrier/donor ratio of 7.5% was obtained at 900 °C. The effects of annealing temperature on the rectifying behavior and external quantum efficiency of n⁺p junctions formed on Se-hyperdoped silicon were also investigated. We found that 700 °C was the optimal annealing temperature for improving the crystallinity, below-bandgap absorption, junction rectification and external quantum efficiency of Se-doped samples.     

The effect of temperature on the growth and properties of green light-emitting In0.5Ga0.5N films prepared by reactive sputtering with single cermet target

We have grown In_0.5Ga_0.5N films on SiO₂/Si (100) substrate at 100–400 °C for 90 min by rf reactive sputtering with single cermet target. The target was made by hot pressing the mixture of metallic indium, gallium and ceramic gallium nitride powder. X-ray diffraction (XRD) measurements indicated that In_0.5Ga_0.5N films had wurtzite structure and showed the preferential (1 0 -1 0) diffraction. Both SEM and AFM showed that In_0.5Ga_0.5N films were smooth and had small roughness of 0.6 nm. Optical properties were measured by photoluminescence (PL) spectra from room temperature to low temperature of 20 K. The 2.28 eV green emission was achieved at room temperature for all our InGaN films. The electrical properties of In_0.5Ga_0.5N films on a SiO₂/Si (100) substrate were measured by the Hall measurement at room temperature. InGaN films showed the electron concentration of 1.51×10²⁰–1.90×10²⁰ cm⁻³ and mobility of 5.94–10.5 cm² V⁻¹ s⁻¹. Alloying of InN and GaN was confirmed for the sputtered InGaN.     

Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer

Al_0.26Ga_0.74N/AlN/GaN high-electron-mobility transistor (HEMT) structures with AlN interfacial layers of various thicknesses were grown on 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy, and their structural and electrical properties were characterized. A sample with an optimum AlN layer thickness of 1.0 nm showed a highly enhanced Hall mobility (μ_Hall) of 1770 cm²/Vs with a low sheet resistance (ρ_s) of 365 Ω/sq. (2DEG density n_s = 1.0 × 10¹³/cm²) at room temperature compared with those of a sample without the AlN interfacial layer (μ_Hall = 1287 cm²/Vs, ρ_s = 539 Ω/sq., and n_s = 0.9 × 10¹³/cm²). Electron transport properties in AlGaN/AlN/GaN structures were theoretically studied, and the calculated results indicated that the insertion of an AlN layer into the AlGaN/GaN heterointerface can significantly enhance the 2DEG mobility due to the reduction of alloy disorder scattering. HEMTs were successfully fabricated and characterized. It was confirmed that AlGaN/AlN/GaN HEMTs with the optimum AlN layer thickness show superior DC properties compared with conventional AlGaN/GaN HEMTs.     

2 MeV ion irradiation effects on AlGaN/GaN HFET devices

AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with 2 MeV protons, carbon, oxygen, iron and krypton ions with fluences ranging from 1 × 10⁹ cm^?2 to 1 × 10¹³ cm^?2. DC, pulsed I–V characteristics, loadpull and S-parameters of the AlGaN HFET devices were measured before and after irradiation. In parallel, a thick GaN reference layer was also irradiated with the same ions and was characterized by X-ray diffraction, photoluminescence, Hall measurements before and after irradiation. Small changes in the device performance were observed after irradiation with carbon and oxygen at a fluence of 5 × 10¹⁰ cm^?2. Remarkable changes in device characteristics were seen at a fluence of 1 × 10¹² cm^?2 for carbon, oxygen, iron and krypton irradiation. Similarly, remarkable changes were also observed in the GaN layer for irradiations with fluence of 1 × 10¹² cm^?2. The results found on devices and on the GaN layer were compared and correlated.     

Direct MBE growth of GaN on GaAs substrates for integrated short wavelength emitters

The growth and material properties of GaN heteroepitaxial layers on vicinal (1 0 0) and exact (1 1 1)B substrates have been investigated, using molecular beam epitaxy (MBE) with N₂ RF-plasma source. We examined the approach to grow GaN directly on the oxide desorbed GaAs, without the incidence of an As beam during oxide desorption or the following stages of growth. Perfect smooth surfaces were obtained on (1 1 1)B GaAs but excellent luminescence properties were observed on vicinal (1 0 0) GaAs. Four growth temperatures (T_G) were compared for the (1 0 0) orientation and a monotonic increase of photoluminescence intensity with increasing T_G, in the range of 570–680°C, was observed. The best surface morphology of less than 10 nm rms roughness was also determined, by atomic force microscopy, for the maximum (680°C) temperature. The layers exhibited up to 10¹⁷ cm⁻³ electron concentration and it could be compensated by Mg impurities. Metallizations of Pt and Pd gave ohmic contacts on GaN/GaAs (1 0 0) but a Schottky diode contact was achieved by Ir metallization. The obtained material properties are probably sufficient for realizing efficient GaN light emitters on (1 0 0) GaAs substrates.     

Low frequency noise spectroscopy in InAs/GaAs resonant tunneling quantum dot infrared photodetectors

We have studied the temperature dependence of low-frequency noise in InAs–GaAs resonant tunneling quantum dot infrared photodetectors (T-QDIPs). The noise in these devices has been investigated in the temperature range of 78–300 K. The noise spectrum showed a weak Lorentzian component superimposed upon the 1/f^γ spectrum. The change in the cut-off frequency of the Lorentzian was analyzed as a function of temperature. The activation energy of the trap associated with this Lorentzian was obtained as 0.155 eV, which is in good agreement with the energy of the lowest energy state in the quantum dot.     

Comparative analysis of parameter extraction techniques for AlGaN/GaN HEMT on silicon/sapphire substrate

We report a comparative study of artificial neural network (ANN) model and small signal model (SSM) based on extracted parameters. ANN model training is done using Levenberg-Marquardt back propagation algorithm, whereas SSM is formed by extracting circuit parameters from measured S-parameters of GaN HEMT on Silicon and Sapphire. It has been found that, for the GaN HEMT parameter extraction, it takes 85 hidden layer neurons to produce the output with higher accuracy. The optimized test and training error/performance are found to be 1.12 × 10^− 8/0.97 and 1 × 10^− 8/0.99, respectively.     

Enhanced photocatalytic activity of water stable hydroxyl ammonium lead halide perovskites

Hybrid perovskite have shown a potential as structurally and chemically tunable materials with interesting optical properties. Herein, We describe the synthesis and characterization of two new perovskites, hydroxyl ammonium lead iodo chloride, OHNH₃PbI₂Cl (1) and hydroxyl ammonium lead chloride, OHNH₃PbCl₃ (2) by wet-chemical route. The as-prepared (1) and (2) have shown promising optical properties with suitable band gaps 3.7 eV and 3.9 eV respectvely. Time resolved Photoluminescence (PL) results showed that hybride pervoskite (2) had a long lived PL whereas (1) exhibited a short PL life-time. Thermo-gravimetrical analysis (TGA) in nitrogen gas environment revealed that (1) and (2) are stable and do not show any sign of decomposition up to ~200 ^oC. Photocatalytical performance of as-prepared materials (1) and (2) under sunlight were mointerted using textile dye direct yellow. The compound (1) degraded dye in 20 min while (2) in 55 min with superior recyclablity.