64×64元InSb红外焦平面读出电路研制进展

研制了用于 6 4× 6 4元InSb红外焦平面的几种读出电路。ISM 6 4× 6 4- 2型电路是采用直接注入模式 ,行积分工作的读出电路。ISM 6 4× 6 4- 3型电路仍然采用直接注入读出模式 ,行积分工作 ,但是增加了一级采样保持电路。ISM 6 4× 6 4- 4型电路采用直接注入模式 ,帧积分工作 ,因而可大大提高信噪比。描述了 2、3和 4型电路的结构 ,工作原理及版图设计特点 ,电路的制造工艺、测试方法及其主要性能。     

LED阵列的设计和制作工艺研究

根据Al GaInP外延片的结构特点设计了LED型微显示器件的主要结构。利用Markus-Christian Amann等人提出的模型对器件电流注入后的空间分布进行了简单的理论分析,总结出了像素元和上隔离沟槽的理想尺寸分别是16μm×16μm和2μm。简述了减薄GaAs衬底的作用,设计衬底电隔离沟槽宽度为5μm。采用湿法腐蚀工艺进行器件结构制备,利用不同的腐蚀剂对金属层、p-GaP层、Al GaInP层和n-GaAs衬底层进行腐蚀。实验结果表明,腐蚀后的沟槽形貌较好,其深度和宽度可以达到设计要求。     

Particle-beam fabrication and in situ processing of integrated circuits

Particle beams, in their broadest context, have become the most common tools in the kit of the IC process engineer, In this paper the general characteristics of particle-beam technologies are systematically classified and critical applications issues are outlined. The uses of ion, electron, and photon beams for various processes (e.g., thin-film deposition, lithography, etching, doping) are reviewed and critical issues are highlighted. The feasibility of integrating several advanced beam processes to achieve a totally in situ process is discussed. Particulate contamination in "clean"- room environment and under vacuum conditions is addressed and related to chip defects and yield. The relative advantages, in terms of facility and operating cost, flexibility, device performance, of an in situ process are considered.     

Fabrication of flexible AlGaInP LED

Flexible light-emitting diodes(LEDs)are highly desired for wearable devices,flexible displays,robotics,biomedicine,etc.Traditionally,the transfer process of an ultrathin wafer of about 10–30μm to a flexible substrate is utilized.However,the yield is low,and it is not applicable to thick GaN LED chips with a 100μm sapphire substrate.In this paper,transferable LED chips utilized the mature LED manufacture technique are developed,which possesses the advantage of high yield.The flexible LED array demonstrates good electrical and optical performance.     

Thick-film fabrication techniques for millimetre-wave dielectric waveguide integrated circuits

The letter presents the results of an initial study performed in the development of millimetre-wave dielectric waveguide integrated circuits using novel thick-film printing techniques. The measurements of the propagation characteristics of sample lines at 60 GHz demonstrate the feasibility of such an approach and examples of printed components indicate its potential in low-cost high-volume applications.     

Selective epitaxial growth for the fabrication of CMOS integrated circuits

A process is described for the fabrication of CMOS integrated circuits which combines the epitaxial lateral overgrowth (ELO) technique with the concept of selective epitaxy. The resulting epitaxial material is shown to have a low defect density. Transistors fabricated in the selective epitaxy are shown to have characteristics which are a function of the epitaxial deposition conditions, the substrate orientation and dopant concentration, and the epitaxial layer thickness. Minimum device leakage currents were 250 pA/µm of channel width for n-channel devices fabricated in a p-well and 1.0 pA/µm for devices fabricated on p-substrates. The higher leakage currents for devices fabricated in a well are believed to be a result of the narrow vertical spacing (0.3-0.5 µm) between the n⁺source-drain regions and the n⁺substrate.     

两维LED显示屏制作浅析

阐述了大屏面两维发光二极管（LED）显示屏的设计、制造及其在虚拟显示样机像源中的应用。对LED阵列亮度的均匀性作了分析。典型的取样图像、图形及灰度图像皆证明LED阵列的性能可用作虚拟显示的单色檬源。     

Analysis of active matrix GaN-based HFET switch circuits integrated with GaN LED micro-displays

We demonstrate a novel GaN-based heterojunction field effect transistor (HFET) active-matrix circuit for an light-emitting diode (LED) microdisplay. Simulation results are shown with basic and improved circuits. Variations of process and material growth conditions are discussed by correlating device parameters with LED flow currents in this circuit. It shows that the HFET-LED control circuit approach provides a stability path to mitigate variations of LED currents during operations.     

复合布拉格反射镜高亮度AlGaInP发光二极管

采用光学薄膜理论中干涉矩阵模型计算了峰值波长为630nm的AlGaInP红光LED的Al0.6Ga0.4As/AlAs材料的常规DBR和复合DBR的反射谱特性,用LP-MOCVD方法生长了模拟设计的DBR结构,测量了其白光反射谱,实验与模拟结果基本符合.制备了采用Al0.6Ga0.4As/AlAs复合DBR的LED器件,未封装输出光功率为2.3mW,外量子效率为5.6%,发光效率可达12 lm/W,比常规DBR器件提高了35%.验证了复合DBR与常规DBR相比,可以大幅度提高AlGaInP红光LED的出光效率.     

复合布拉格反射镜高亮度AlGaInP发光二极管

采用光学薄膜理论中干涉矩阵模型计算了峰值波长为630nm的AlGaInP红光LED的Al0.6Ga0.4As/AlAs材料的常规DBR和复合DBR的反射谱特性,用LP-MOCVD方法生长了模拟设计的DBR结构,测量了其白光反射谱,实验与模拟结果基本符合.制备了采用Al0.6Ga0.4As/AlAs复合DBR的LED器件,未封装输出光功率为2.3mW,外量子效率为5.6%,发光效率可达12 lm/W,比常规DBR器件提高了35%.验证了复合DBR与常规DBR相比,可以大幅度提高AlGaInP红光LED的出光效率.     

宽谱平面阵列激光器的设计与实现

在二极管泵浦的固体激光器中,由于泵源的输出波长具有温漂特性,造成了与激光晶体吸收光谱的匹配性问题,使得泵浦效率降低,影响固体激光器的输出能量。为了避免该影响,项目组采用拓宽发射光谱覆盖范围的设计思路,开展了宽光谱平面阵列的研制工作。本文分别完成了6芯平面阵列的建模、阵列中心波长的设计、以及基于高斯光谱模型的双波长叠加的仿真工作;同时采用(2.0 nm、2.4 nm、2.8 nm、3.2 nm)四个波长间隔的芯片进行了实验验证。结果表明:在波长间隔为2.0 nm和2.4 nm时,叠加后光谱呈现单一峰状态;在波长间隔为2.8 nm和3.2 nm时,叠加光谱呈现峰谷分布,相应峰谷比的测试值分别为1.03和1.14,设计仿真与实验结果基本一致。本文为宽光谱阵列激光器非温控泵浦结构的量化计算提供了思路。     

集成化故障检测电路设计

讨论了高频 (微波 )通讯系统中故障检测电路设计的一般方法及设计中应注意的问题 ,并给出了一个设计实例     

Epitaxial lift-off GaAs LEDs to Si for fabrication of opto-electronic integrated circuits

The authors report, for the first time, the successful integration of GaAs LEDs on Si using the epitaxial lift-off technique. LEDs were processed after the transfer and could be aligned to features on the Si substrate. LED contacts were defined on both sides of the thin layer. Operation characteristics similar to those of LEDs grown on GaAs were observed. This realisation holds out interesting prospects in the fabrication of quasi-monolithic opto-electronic integrated circuits.<>     

Design of integrated circuits: directions and challenges

Several of the dimensions of IC CAE technology are discussed, focusing on two design styles: custom design, used for commodity products such as DRAMs, microprocessors, etc., where large volume production is planned and area reduction and performance maximization can be expected to return large dividends; and the design of application-specific integrated circuits (ASICs), utilizing either very regular, prepatterned silicon arrays customized at the interconnect level or predesigned, parameterized libraries of cells that are usually arranged in rows and interconnected. The design research that will be required in order to attain the objectives of highly automated design systems and shorter product design cycles for integrated circuits are outlined. Metrics for design system performance are discussed     

Design and fabrication of integrated Si-based optoelectronic devices

We have designed and fabricated novel Si-based optoelectronic devices. To this aim, different Si-based optical sources have been made and their performances at room temperature compared. Er-doped Si p–n junctions, operating at 1.54 μm and exhibiting an efficiency of 0.05% at room temperature, have been integrated with planar Si rib waveguides using either epitaxial Si or silicon on insulators (SOI) wafers. Optical characterization of these waveguides reveals very low transmission losses (below 1 dB/cm). However, Er-doping of the waveguide core, needed for the realization of the light source, results in a large increase of the losses as a consequence of absorption by the free electrons introduced by the rare earths. These losses can be suppressed when the junction is reverse biased and the whole Er profile is embodied in the depletion layer. Since this also allows efficient pumping of Er ions by hot carriers, the performances of the diodes and of the waveguides can be suitably combined. This optimized structure has also been used to design electrically pumped optical amplifiers and lasers, whose performances have been simulated.     

亮度可调的LED点阵书写显示屏的设计与制作

基于AT89C52主控制器芯片,搭建16×16点阵LED书写显示屏的硬件平台并采用模块化的编程方法,设计点阵显示屏书写功能的软件系统。实际制作和测试结果表明,LED点阵显示屏的亮度等级可以进行调节,实现了"点亮"、"划亮"、"整屏擦除"、"正常显示"、"反相显示"、"笔画擦除"等书写显示功能,起到了节能环保的功效。     

Au-CNT对AlGaInP LED的电流扩展效应研究

通过对AlGaInP LED器件进行电流分布模拟,得出电流扩展长度与注入电流和电流扩展层方块电阻之间的变化关系.实验制备出带有Au纳米颗粒的碳纳米管(Au-CNT)作为电流扩展层的LED器件,20 mA电流下,测得其光功率比无扩展层器件提升了33％.模拟结果与实验结果具有较好的一致性,说明带有Au纳米颗粒的碳纳米管透明导电层可以起到增强电流扩展作用,有效提高器件光功率.     

GaAs基AlGaInP LED的研究和进展

探讨了GaAs基AlGaInP LED的最新研究与进展,介绍了AlGaInP红光LED外延材料的能带结构和基本的外延层结构以及限制外量子效率的问题,探讨了几种高效率的LED器件结构设计。着重介绍了目前一些外量子效率比较高的LED器件的制作方法以及一些提高外量子效率的AlGaInP LED器件结构,最后探讨了AlGaInP LED在作为固体光源发展过程中仍然需要面对的挑战。     

GaAs基AIGaInP LED的研究和进展

探讨了GaAs基AIGaInP LED的最新研究与进展,介绍了AlGaInP红光LED外延材料的能带结构和基本的外延层结构以及限制外量子效率的问题,探讨了几种高效率的LED器件结构设计.着重介绍了目前一些外量子效率比较高的LED器件的制作方法以及一些提高外量子效率的AlGaInP LED器件结构,最后探讨了AlGaInP LED在作为固体光源发展过程中仍然需要面对的挑战.     

Design and performance of GaAs normally-off MESFET integrated circuits

DC and transient analyses of GaAs normally-off MESFET integrated circuits are described. The design tradeoffs between device parameters and logic characteristics are discussed for an inverter with a resistive load. By increasing the supply voltage to several times that of the built-in voltage, the propagation delay time can be lowered similar to that when using an active load (current source). To investigate the speed-power performance of the IC's, ring oscillators with different fan-in and fan-out configurations were fabricated. A binary frequency divider which uses a master-slave flip-flop was tested. The maximum counting frequency of the divider was 610 MHz at a supply voltage of 1.5 V. This coincides with the results obtained from the ring oscillators with fan-in/fan-out = 2/2. Comparing the experimental results with the theory, the effective electron mobility in the thin channel layer is expected to be very low. By improving the mobility and shortening the gate length to half a micrometer, practical functioning circuits should operate with an average propagation delay time of less than 100 ps.