LED阵列的设计和制作工艺研究

根据Al GaInP外延片的结构特点设计了LED型微显示器件的主要结构。利用Markus-Christian Amann等人提出的模型对器件电流注入后的空间分布进行了简单的理论分析,总结出了像素元和上隔离沟槽的理想尺寸分别是16μm×16μm和2μm。简述了减薄GaAs衬底的作用,设计衬底电隔离沟槽宽度为5μm。采用湿法腐蚀工艺进行器件结构制备,利用不同的腐蚀剂对金属层、p-GaP层、Al GaInP层和n-GaAs衬底层进行腐蚀。实验结果表明,腐蚀后的沟槽形貌较好,其深度和宽度可以达到设计要求。     

Particle-beam fabrication and in situ processing of integrated circuits

Particle beams, in their broadest context, have become the most common tools in the kit of the IC process engineer, In this paper the general characteristics of particle-beam technologies are systematically classified and critical applications issues are outlined. The uses of ion, electron, and photon beams for various processes (e.g., thin-film deposition, lithography, etching, doping) are reviewed and critical issues are highlighted. The feasibility of integrating several advanced beam processes to achieve a totally in situ process is discussed. Particulate contamination in "clean"- room environment and under vacuum conditions is addressed and related to chip defects and yield. The relative advantages, in terms of facility and operating cost, flexibility, device performance, of an in situ process are considered.     

Thick-film fabrication techniques for millimetre-wave dielectric waveguide integrated circuits

The letter presents the results of an initial study performed in the development of millimetre-wave dielectric waveguide integrated circuits using novel thick-film printing techniques. The measurements of the propagation characteristics of sample lines at 60 GHz demonstrate the feasibility of such an approach and examples of printed components indicate its potential in low-cost high-volume applications.     

两维LED显示屏制作浅析

阐述了大屏面两维发光二极管（LED）显示屏的设计、制造及其在虚拟显示样机像源中的应用。对LED阵列亮度的均匀性作了分析。典型的取样图像、图形及灰度图像皆证明LED阵列的性能可用作虚拟显示的单色檬源。     

Selective epitaxial growth for the fabrication of CMOS integrated circuits

A process is described for the fabrication of CMOS integrated circuits which combines the epitaxial lateral overgrowth (ELO) technique with the concept of selective epitaxy. The resulting epitaxial material is shown to have a low defect density. Transistors fabricated in the selective epitaxy are shown to have characteristics which are a function of the epitaxial deposition conditions, the substrate orientation and dopant concentration, and the epitaxial layer thickness. Minimum device leakage currents were 250 pA/µm of channel width for n-channel devices fabricated in a p-well and 1.0 pA/µm for devices fabricated on p-substrates. The higher leakage currents for devices fabricated in a well are believed to be a result of the narrow vertical spacing (0.3-0.5 µm) between the n⁺source-drain regions and the n⁺substrate.     

Analysis of active matrix GaN-based HFET switch circuits integrated with GaN LED micro-displays

We demonstrate a novel GaN-based heterojunction field effect transistor (HFET) active-matrix circuit for an light-emitting diode (LED) microdisplay. Simulation results are shown with basic and improved circuits. Variations of process and material growth conditions are discussed by correlating device parameters with LED flow currents in this circuit. It shows that the HFET-LED control circuit approach provides a stability path to mitigate variations of LED currents during operations.     

集成化故障检测电路设计

讨论了高频 (微波 )通讯系统中故障检测电路设计的一般方法及设计中应注意的问题 ,并给出了一个设计实例     

Fabrication and property analysis of AlGaInP red light LED with high bright

The LED with DBR and enhancing transmission film was grown by MOCVD. At 20 mA DC injection current, the LED peak wavelength was 623 nm, the light intensity was 200 mcd, and the output light power was 2.14 mW. The light intensity and output light power have been improved than traditional LED.     

Design of integrated circuits: directions and challenges

Several of the dimensions of IC CAE technology are discussed, focusing on two design styles: custom design, used for commodity products such as DRAMs, microprocessors, etc., where large volume production is planned and area reduction and performance maximization can be expected to return large dividends; and the design of application-specific integrated circuits (ASICs), utilizing either very regular, prepatterned silicon arrays customized at the interconnect level or predesigned, parameterized libraries of cells that are usually arranged in rows and interconnected. The design research that will be required in order to attain the objectives of highly automated design systems and shorter product design cycles for integrated circuits are outlined. Metrics for design system performance are discussed     

Epitaxial lift-off GaAs LEDs to Si for fabrication of opto-electronic integrated circuits

The authors report, for the first time, the successful integration of GaAs LEDs on Si using the epitaxial lift-off technique. LEDs were processed after the transfer and could be aligned to features on the Si substrate. LED contacts were defined on both sides of the thin layer. Operation characteristics similar to those of LEDs grown on GaAs were observed. This realisation holds out interesting prospects in the fabrication of quasi-monolithic opto-electronic integrated circuits.<>     

亮度可调的LED点阵书写显示屏的设计与制作

基于AT89C52主控制器芯片,搭建16×16点阵LED书写显示屏的硬件平台并采用模块化的编程方法,设计点阵显示屏书写功能的软件系统。实际制作和测试结果表明,LED点阵显示屏的亮度等级可以进行调节,实现了"点亮"、"划亮"、"整屏擦除"、"正常显示"、"反相显示"、"笔画擦除"等书写显示功能,起到了节能环保的功效。     

GaAs基AIGaInP LED的研究和进展

探讨了GaAs基AIGaInP LED的最新研究与进展,介绍了AlGaInP红光LED外延材料的能带结构和基本的外延层结构以及限制外量子效率的问题,探讨了几种高效率的LED器件结构设计.着重介绍了目前一些外量子效率比较高的LED器件的制作方法以及一些提高外量子效率的AlGaInP LED器件结构,最后探讨了AlGaInP LED在作为固体光源发展过程中仍然需要面对的挑战.     

GaAs基AlGaInP LED的研究和进展

探讨了GaAs基AlGaInP LED的最新研究与进展,介绍了AlGaInP红光LED外延材料的能带结构和基本的外延层结构以及限制外量子效率的问题,探讨了几种高效率的LED器件结构设计。着重介绍了目前一些外量子效率比较高的LED器件的制作方法以及一些提高外量子效率的AlGaInP LED器件结构,最后探讨了AlGaInP LED在作为固体光源发展过程中仍然需要面对的挑战。     

Design and performance of GaAs normally-off MESFET integrated circuits

DC and transient analyses of GaAs normally-off MESFET integrated circuits are described. The design tradeoffs between device parameters and logic characteristics are discussed for an inverter with a resistive load. By increasing the supply voltage to several times that of the built-in voltage, the propagation delay time can be lowered similar to that when using an active load (current source). To investigate the speed-power performance of the IC's, ring oscillators with different fan-in and fan-out configurations were fabricated. A binary frequency divider which uses a master-slave flip-flop was tested. The maximum counting frequency of the divider was 610 MHz at a supply voltage of 1.5 V. This coincides with the results obtained from the ring oscillators with fan-in/fan-out = 2/2. Comparing the experimental results with the theory, the effective electron mobility in the thin channel layer is expected to be very low. By improving the mobility and shortening the gate length to half a micrometer, practical functioning circuits should operate with an average propagation delay time of less than 100 ps.     

Design of high-order active filters in integrated circuits

This correspondence considers the design of high-order filters using follow-the-leader feedback configurations and active-R biquadratic blocks. Statistical sensitivities of various second-order active-R and active-RC sections are compared, and experimental results of a sixth-order Butterworth bandpass filter are also included. The FLF configuration and versatile active-R blocks are also suitable for fully integrated filters.     

Application of a solution proximity annealing technique for fabrication of ion-implanted GaAs integrated circuits

A technique for capless annealing of ion-implanted GaAs, using an arsenic-saturated solution of Sn and Ga in close proximity to the wafer, has been applied to the fabrication of GaAs integrated circuits. The IC processing technology utilizes a self-aligned T-shaped refractory gate approach for the fabrication of both enhancement- and depletion-mode MESFET's. Using the solution proximity annealing technique, excellent threshold voltage uniformities (standard deviation = 26 mV) have been obtained for enhancement-mode devices using commercial substrates. This process technology has resulted in the fabrication of divide-by-16 circuits in both SDFL and DCFL logic implementations, as well as enhancement/depletion (E/D) ring oscillators (Lg= 2 µm) with propagation delays as low as 45 ps/gate and concomitant power consumptions of 2 mW/gate. This technique can also be applied, by suitable choice of the solution constituents, to capless annealing of other III-V semiconductors such as InP and GaInAs.     

加速度传感器信号处理集成电路的研制

设计并制作了一种用于差分电容式加速度传感器的信号处理电路。该电路具有模拟和脉宽调制两种输出方式，能够将差分电容的变化通过模拟电平和输出脉冲信号的占空比表征，实现了对差分电容式加速度传感器信号的测量。电路中集成了自检测驱动单元。电路采用4μmP阱CMOS工艺制作。初步测试结果表明：在1～5pF内，电路的灵敏度为10．7V／pF，可满足大多数差分电容式传感器信号处理的要求。     

Design principles for low-voltage low-power analog integrated circuits

In this paper it is argued that there are good reasons to choose current as the information-carrying quantity in the case of low-voltage low-power design constraints. This paper focuses on the influence of the transfer quality on that choice. To obtain power-efficient transfer quality, indirect feedback is shown to be a good alternative to traditional feedback techniques.     

加速度传感器信号处理集成电路的研制

设计并制作了一种用于差分电容式加速度传感器的信号处理电路。该电路具有模拟和脉宽调制两种输出方式 ,能够将差分电容的变化通过模拟电平和输出脉冲信号的占空比表征 ,实现了对差分电容式加速度传感器信号的测量。电路中集成了自检测驱动单元。电路采用 4 μmP阱CMOS工艺制作。初步测试结果表明 :在 1～ 5 pF内 ,电路的灵敏度为 10 .7V/ pF ,可满足大多数差分电容式传感器信号处理的要求。     

晶片键合在AlGaInP发光二极管中的应用

(AlxGa1-x)0.5In0.5P高亮度发光二极管是在GaAs衬底上匹配外延的,它的外量子效率受限于吸收光线的GaAs衬底。LED晶片键合技术可以把LED外延片和GaP透明衬底、金属镜面衬底或蓝宝石衬底结合以提高出光效率。本文对上述三种晶片键合的器件制备过程和器件特点进行了描述。