量子限制效应对受主跃迁的影响

通过光致发光光谱,研究了量子限制效应对GaAs体材料中均匀掺杂和一系列GaAs/AlAs多量子阱(阱宽范围从30A到200A)中δ-掺杂浅受主杂质铍(Be)原子带间跃迁的影响.实验中所用的样品是利用分子束外延技术生长的均匀掺Be受主的GaAs外延层和一系列在量子阱的中央进行了浅受主Be原子δ-掺杂的GaAs/AlAs多量子阱.在4.2K的低温下,测量了上述样品的光致发光谱,很清楚地观察到了受主束缚激子从基态1S3/2(Γ6)到两个激发态2S3/2(Γ6)和3S3/2(Γ6)的双空穴跃迁.研究发现,随着量子限制效应的增强,受主跃迁能量会增加.对量子限制效应调节受主杂质问跃迁能量的研究,进一步增强了对受主能态可调性的认识,为太赫兹远红外发光器或激光器的研发提供了一种新的途径.     

非掺杂n型氮化镓外延层的光致发光

研究了热处理对非掺杂 n型氮化镓外延层光致发光谱的影响和光谱中各发光带强度与温度之间的关系 .热处理后 ,光谱中的带边峰和黄光峰的强度较热处理前都有明显降低 .黄光峰强度随温度升高的衰减速度要比带边峰慢得多 .由这些实验结果得出结论 :光谱中的带边峰是由自由激子和束缚在一浅施主能级的束缚激子的谱线重合而成 ,这个浅施主能级很有可能是由氮空位产生 ;黄色荧光的机制应为自由电子或施主能级向深受主能级的跃迁 ,并且黄色荧光肯定和氮化镓中的一内部缺陷产生的深受主能级有关 ,该内部缺陷很有可能是镓空位 .     

非掺杂n型氮化镓外延层的光致发光

研究了热处理对非掺杂n型氮化镓外延层光致发光谱的影响和光谱中各发光带强度与温度之间的关系．热处理后,光谱中的带边峰和黄光峰的强度较热处理前都有明显降低．黄光峰强度随温度升高的衰减速度要比带边峰慢得多．由这些实验结果得出结论：光谱中的带边峰是由自由激子和束缚在一浅施主能级的束缚激子的谱线重合而成,这个浅施主能级很有可能是由氮空位产生;黄色荧光的机制应为自由电子或施主能级向深受主能级的跃迁,并且黄色荧光肯定和氮化镓中的一内部缺陷产生的深受主能级有关,该内部缺陷很有可能是镓空位．     

掺氮ZnSe外延层的光致发光研究

报导了掺氮ＺｎＳｅ外延层的光致发光,研究了与氮受主有关的发光峰随温度和激发强度的变化关系．１０Ｋ下施主－受主对发光峰随激发强度的增加向高能方向移动,且峰强呈现饱和趋势．在１０～３００Ｋ温度范围光致发光谱表明,随着温度增加,由于激子在受主束缚激子态和施主束缚激子态之间转移,施主束缚激子发光峰强度相对受主束缚激子发光峰强度增加     

量子阱中Be受主的光致发光

报道了掺杂在GaAs体材料中和δ掺杂在一系列GaAs/AlAs多量子阱中的Be受主带间跃迁的光致发光.实验所用样品,GaAs体材料中均匀掺杂Be受主的外延单层和一系列量子阱宽度从3到20nm,并在量子阱中央进行了Be受主δ掺杂的GaAs/AlAs多量子阱样品都是通过分子束外延技术制备的.在4,20,40,80及120K不同温度下,分别对上述样品进行了光致发光谱的测量,清楚地观察到了受主束缚激子从1S3/2(Γ6)基态到同种宇称2S3/2(Γ6)激发态的两空穴跃迁,并从实验上得到了不同量子阱宽度下Be受主从1S3/2(Γ6)到2S3/2(Γ6)态的带间跃迁能量.理论上利用变分原理,在单带有效质量模型和包络函数近似下,数值计算了Be受主1S3/2(Γ6)→2S3/2(Γ6)的跃迁能量随量子阱宽度的变化关系,比较发现理论计算和实验结果符合较好.     

Does Excess Energy Assist Photogeneration in an Organic Low‐Bandgap Solar Cell?

The field dependence of the photocurrent in a bilayer assembly is measured with the aim to clarify the role of excess photon energy in an organic solar cell comprising a polymeric donor and an acceptor. Upon optical excitation of the donor an electron is transferred to the acceptor forming a Coulomb‐bound electron–hole pair. Since the subsequent escape is a field assisted process it follows that photogeneration saturates at higher electric fields, the saturation field being a measure of the separation of the electron–hole pair. Using the low bandgap polymers, PCDTBT and PCPDTBT, as donors and C₆₀ as acceptor in a bilayer assembly it is found that the saturation field decreases when the photon energy is roughly 0.5 eV above the S₁–S₀ 0–0 transition of the donor. This translates into an increase of the size of the electron‐hole‐pair up to about 13 nm which is close to the Coulomb capture radius. This increase correlates with the onset of higher electronic states that have a highly delocalized character, as confirmed by quantum‐chemical calculations. This demonstrates that accessing higher electronic states does favor photogeneration yet excess vibrational energy plays no role. Experiments on intrinsic photogeneration in donor photodiodes without acceptors support this reasoning.     

Phonon-assisted exciton luminescence in GaN layers grown by MBE and chloride-hydride VPE

Optical properties of GaN layers grown by the molecular-beam epitaxy (MBE) and chloride-hydride vapor-phase epitaxy (CHVPE) have been studied, and the quality of two types of samples has been compared. The photoluminescence spectra have an excitonic nature for both types of layers. To determine precisely the nature of exciton transitions, the reflectance spectra were studied. A key point was the investigation of phonon-assisted exciton luminescence, which provides information on the density distribution of the exciton states. Temperature dependences of the exciton transition energy and the ratio of intensities of one-and two-phonon replicas were studied. The high quality of both types of layers has been confirmed, though the concentration of acceptors in MBE-grown samples is higher than in CHVPE samples.     

Spectroscopic studies of ZnSe grown by liquid phase epitaxy

The application of modern LPE techniques to ZnSe has recently resulted in material which shows a relatively small number of sharp lines in the bound exciton (BE) region and negligible deep level emission. BE transitions reveal the presence of Al and In donors and Li acceptors. Occasionally BE's related to Cl and Ga donors and Na acceptors are also observed. The sole unidentified line at 2.79 eV appears to be related to an isoelectronic center, on the basis of its moderate phonon coupling and lack of 2-electron transitions. These sharp narrow (<0.2 meV) BE lines indicate that the total shallow donor concentration is < 5 × 10¹⁶/cm³. No manifestation of vacancies or interstitials has been seen, and thus all the shallow donor or acceptor states in undoped material appear to be impurity related. In the donor-acceptor pair (DAP) region, the formerly observed Al-Li pair lines [1] are seen as doublets, suggesting a new shallow donor with a binding energy ~0.3 meV different from Al. Correlation with growth conditions suggests that the new donor is likely to be boron. N, P, and As-doped samples show DAP bands which indicate that they form shallow acceptors, but confirmation of their presence as simple substitutional acceptors has not yet been achieved. The activation energies, derived from DAP band positions, are 80, 85, and 100 meV, respectively, for N, P, and As.     

Photoluminescence of V-doped GaN thin films grown by MOVPE technique

This work reports the photoluminescence (PL) study of vanadium-doped GaN (GaN: V) in the 9-300 K range. Samples have been successfully prepared on sapphire substrates by metalorganic vapour phase epitaxy technique (MOVPE). At room temperature (RT) the PL spectra of GaN: V are dominated by a blue band (BB) in the 2.6 eV range. This BB emission is very strong and its intensity increases with increasing V doping level. We also observed that the peak position of the blue luminescence shifted at lower energy with decreasing excitation density. Upon V-doping, the yellow luminescence band shows a drastic reduction in integrated intensity. This observation is explained by a reaction involving V and gallium vacancy (_√Ga). PL spectra at low temperature exhibited a series of peaks. The donor-acceptor (D-A) pair emission peak at 3.27 eV was strongly pronounced, as the temperature was decreased. On the other hand, the intensity of the BB emission decreased. This BB emission is due to a radiative transition from a shallow donor with a depth of 29 meV to a deep acceptor with a depth of 832 meV.     

Photovoltaic Processes of Singlet and Triplet Excited States in Organic Solar Cells

This article reports the respective photovoltaic processes of singlet and triplet photoexcited states in dissociation and charge reactions based on the studies of magnetic‐field effects of photocurrents. The magnetic‐field effects of photocurrents reveal that weak donor‐acceptor interactions lead to a two‐step photovoltaic process: dissociation in polaron‐pair states evolved from singlet excitonic states and exciton‐charge reactions occurred in triplet excitonic states in the generation of the photocurrent. However, strong donor‐acceptor interactions yield a one‐step photovoltaic process: direct dissociation of both singlet and triplet excitons in bulk‐heterojunction organic solar cells. In addition, the magnetic‐field effects of photocurrents indicate that the dissociated electrons and holes form charge‐transfer complexes with singlet and triplet spin configurations at donor‐acceptor intermolecular interfaces. As a result, the magnetic‐field effects of photocurrents can deliver a critical understanding of singlet and triplet photovoltaic processes to design advanced solar‐energy materials and devices.     

非掺杂InP的低温光致发光研究

研究了2K低温下非有意掺杂InP单晶的光致发光谱,对近带边的辐射跃迁进行了仔细分析,报道了InP单晶在大功率光激发时束缚于中性施主的激子跃迁发光相对减弱、而束缚于中性受主的激子跃迁发光相对增强的现象,并探讨了其机制,确认了材料中存在Mg、Zn等残余受主杂质,并计算得到Mg受主的离化能为41.5meV.     

Photoluminescence excitation spectroscopy of the dense exciton gasinvolved in the lasing transition in ZnSe epitaxial layers

The lasing transition in ZnSe epitaxial layers has been investigated at 77 K. The lowest lasing threshold (I_th) was achieved when the layers were resonantly excited at the photon energy of the exciton level. It was found that the exciton level at the excitation intensity just above the I_th was red-shifted by about 16 meV compared with the free exciton line (2.792 eV) under weak excitation condition. The energy difference between the exciton line and the lasing peak was about 19 meV at I=I_th and increased with increasing excitation intensity up to I=8×I_th. This suggests that the stimulated emission occurs due to the inelastic exciton-exciton scattering process at this temperature     

Luminescence of stepped quantum wells in GaAs/GaAlAs and InGaAs/GaAs/GaAlAs structures

Luminescence spectra of doped and undoped GaAs/GaAlAs and InGaAs/GaAs/GaAlAs structures containing several tens of stepped quantum wells (QW) are investigated. The emission bands related to free and bound excitons and impurity states are observed in QW spectra. The luminescence excitation spectra indicate that the relaxation of free excitons to the e1hh1 state proceeds via the exciton mechanism, whereas an independent relaxation of electrons and holes is specific to bound excitons and impurity states. The energy levels for electrons and holes in stepped QWs, calculated in terms of Kane’s model, are compared with the data obtained from the luminescence excitation spectra. The analysis of the relative intensities of emission bands related to e1hh1 excitons and exciton states of higher energy shows that, as the optical excitation intensity increases, the e1hh1 transition is more readily saturated at higher temperature, because the lifetime of excitons increases. Under stronger excitation, the emission band of electron-hole plasma arises and increases in intensity superlinearly. At an excitation level of ～10⁵ W/cm², excitons are screened and the plasma emission band dominates in the QW emission. Nonequilibrium luminescence spectra obtained in a picosecond excitation and recording mode show that the e1hh1 and e2hh2 radiative transitions are 100% polarized in the plane of QWs.     

Excitonic effects in the photoconductivity of quantum-well GaxIn1−x As/InP structures

The photoconductivity spectra of quantum-well structures consisting of 50 alternating 7 to 12-mm-thick Ga_xIn_1−x As (x=0.47) layers forming quantum wells and 10 to 15-nm-thick InP barriers have been investigated. Characteristic excitonic peaks 11H, 11L, 13H, 22H, and 22L were observed in the high-quality structures. A strong temperature dependence was found for the 11H exciton, while no such dependence was observed for any of the other excitons. This is explained by the fact that the 11H state of an exciton falls in the range of energies which are forbidden for free carriers, while the remaining states are resonance states and overlap with the continuous spectrum. The thermal activation energy of photoconductivity was found to be 150±30 meV, much greater than the exciton binding energy and close to the depth of the potential well for electrons. This shows that the photosensitivity is due to above-barrier charge-carrier transfer and that the tunneling transfer between the wells is negligible. Fiz. Tekh. Poluprovodn. 31, 848–850 (July 1997)     

Auger and radiative recombination of acceptor bound excitons in semiconductors

We report on a theoretical and experimental study of acceptor bound exciton recombination. We present calculations of phononless Auger and radiative recombination in direct and indirect band gap materials. We consider hydrogenic acceptors in the direct band gap material Hg_1−xCd_xTe in which the band gap can be varied by changing alloy composition. We present calculations of the Auger transition rate and no-phonon oscillator strengths for the common acceptors in Si and Ge. We have measured the bound exciton lifetimes and no-phonon oscillator strengths for the acceptors in Si and find reasonable agreement with the calculated values.     

应用于1.55微米的高含氮量GaInNAs/GaAs单量子阱的光激反射和光激发光的研究

用光的反射光谱和光的光致发光光谱的测量对Ga0.69In0.31NxAs1-x/GaAs 的单量子阱的光学特性作了研究,在单量子阱的反射光谱中,观察到 GaAs 能隙之上的 Franz-Keldysh 振荡和来源于量子阱区的各种类激子跃迁,Franz-Keldysh 振荡确定量子阱的内建电场并发现它是随 N 的浓度增加而增加;反射信号随样品中氮耦合增强而减弱,因为温度降低时载流子的定域作用导致调制效应的弱化.激子跃迁的能量和温度关系按照 Varshni 和爱因斯坦一玻司方程作了研究,在 PL 谱中观察到的 11H 跃迁能量和谱线展宽的温度反常关系解释为起源于氮耦合所引起的定域态,这种样品的谱线特征为随氮成份增加出现红移,氮结合作用的另一个结果是晶体的性质严重退化,明显地表现线宽受温度的影响增大.总之,氮引进系统会观察到GaAs 边带以上的 FkO 导致内建场增大,有低温时高激发态叠加并屏闭在定域态上的部分调制外场作用的倾向.PL 峰能量和线宽对温度的反常关系可以理解为由氮的结合作用引起的形成定域态和去除定域态的竞争结果.     

Structure and Disorder in Squaraine–C60 Organic Solar Cells: A Theoretical Description of Molecular Packing and Electronic Coupling at the Donor–Acceptor Interface

Organic solar cells based on the combination of squaraine dyes (as electron donors) and fullerenes (as electron acceptors) have recently garnered much attention. Here, molecular dynamics simulations are carried out to investigate the evolution of a squaraine–C₆₀ bilayer interface as a function of the orientation and order of the underlying squaraine layer. Electronic couplings between the main electronic states involved in exciton dissociation and charge (polaron pair) recombination are derived for donor–acceptor complexes extracted from the simulations. The results of the combined molecular‐dynamics?quantum‐mechanics approach provide insight into how the degree of molecular order and the dynamics at the interface impact the key processes involved in the photovoltaic effect.     

Avoiding trap states in poly(n-vinylcarbazole) thin films

Optical properties of poly(n-vinylcarbazole) (PVK) thin films are revisited. Steady-state emission spectra put in evidence a strong red band whose intensity increases with decreasing temperature when the solid state PVK film is excited by a continuous 375 nm laser line. This red band is assigned to the emission from PVK aggregate states which act as trap states for the monomeric PVK triplet high energy (blue) excitons. At the same low temperatures, these trap states can be avoided when the excitation of the PVK film is made by a 355 nm pulsed laser line with 10 Hz repetition rate. The red band was also observed to compete with the emission of guest poly(3-octadecylthiophene) (PODT) molecules in a PVK/PODT sequential bilayer structure. Different optical geometries enabled us to show that the exciton energy transfer effect from PVK donor to PODT acceptor states dominates the scenario in the bilayer structure, suppressing almost completely the trap state emissions.     

Evolution of GaAs quantum well excitons with excess electron density and magnetic field

We present an experimental study of excitonic optical transitions in GaAs quantum wells (QWs) as a function of their excess electron density and an applied magnetic field. There is a dramatic weakening of the neutral excitonic transitions (X) upon adding 10¹⁰ cm⁻² excess electrons to the QW, accompanied by strengthening of the transition due to the negatively-charged exciton (X⁻) to lower energy. Increasing the density further causes X to be completely quenched from the spectra, while X⁻ evolves smoothly into the Fermi-edge singularity. A qualitatively different evolution with an applied magnetic field is observed for X and X⁻, the former showing similar behaviour to that in undoped QWs. Assignment of the X⁻ transition is confirmed by its partial circular light polarization in excitation spectra taken at field, caused by the higher population of excess electrons in the lower energy spin state at low temperature. There is a large enhancement of the second electron binding energy with magnetic field, which stabilizes excited (spin-triplet) X⁻ states.     

等电子施、受主杂质共掺的磷化镓发光特性和能量转移

本文研究了液相外延生长的不同掺Bi,N浓度GaP∶(Bi_7N)材料的低温光致荧光光谱,观察到了N谱线“猝灭”和Bi束缚激子发光增强的现象.这可以解释为束缚激子由等电子受主N向等电子施主Bi隧穿能量转移的结果.变激发密度下各中心发光强度的变化关系以及与GaP∶(Bi)材料的实验结果比较,为这一能量转移过程提供了进一步的论据.