CdS 纳米粒子掺杂的液晶显示器件的低开启电压和频率调制特性

降低能耗对于液晶显示器件,尤其是移动显示尤为重要.在本研究中,3 nm 和 5 nm 两种不同尺寸的 CAS 纳米粒子被用来掺杂入 5CB 液晶材料.掺杂浓度分别为 0.1 wt%和 0.2 wt%.掺杂所得到的液晶显示器件的开启电压由于纳米粒子的影响而被降低,最多可达到25%.并且,相比于前期报道的金属纳米粒子掺杂的液晶显示器件,CdS 纳米粒子显示出稍弱的频率调制特性.     

《液晶与显示》1999年和2000年刊登的主要论文题目

为使广大读者更多地了解《液晶与显示》,现将1999年和2000年在本刊发表的主要论文题目刊出。您若想了解有关论文的详细内容,可到当地图书馆查阅,也可直接与本刊编辑部联系,我们将竭诚为您服务。联系方法与地址请见本刊封底。 -编者- 1999　年　目　录 高温显示液晶的合成 1：1 弱锚定条件下混合排列向列液晶显示的动态响应 1：6 液晶含量对聚合物/液晶复合膜电光特性的影响——从正型向反型显示模式的转变 　　 1：12 有机小分子掺杂的聚合物共混发光二极管 1：18 低阻高透过率ITO薄膜的制备与性能 1：23 TFT工艺中的反应性离子刻蚀 1：29 TN LCD字朦的盒内因素 1：34 以陶瓷厚膜为绝缘层的绿色薄膜电致发光器件 1：39 液晶显示动态驱动信号发生器的研制 1：42 拓展图形式液晶显示模块负温工作范围的方法 1：46 卤代液晶进展 1：50 染料掺杂型有机电致发光器件 1：64 有机电致发光器件的研究与专利 1：70 TFT LCD技术的进步 2：79 含氟二苯乙炔类液晶材料的合成和性质研究 2：90 液晶中形成的聚合物网络织构及形貌的研究 2：94 胆甾相液晶双轴特性的计算 2：105 AlGaInP高亮度发光二极管 2：110 无色移共面转换液晶显示 2：115 TFT AMLCD像素矩阵电路中栅延迟的模拟研究 2：121 TFT栅线及阵列的缺陷分析 2：126 LCD图形模块的控制技术 2：131 硅基TFT有源矩阵液晶显示技术 2：137 激基复合物与有机聚合物EL性能的关系 2：145 椭圆偏光解析法对液晶界面层分子有序度的研究 3：153 高开口率TFT LCD的黑矩阵设计 3：162 提高共面转换液晶显示器件响应时间的研究 3：167 一种具有空间变化的轴对称偏振特性的液晶偏振光器件 3：175 高性能a-Si∶H TFT开关器件的研制 3：181 周边集成AMLCD的信号失真和缓冲寄存器TFT尺寸计算 3：187 氢化非晶硅的红外光谱及氢释放的研究 3：193 正模式PSCT光阀透过率随波长分布特性的研究及其应用 3：199 AC PDP介质膜的实验研究 3：207 一种低压驱动TFT液晶显示屏的方法 3：211 液晶显示器的设计与光绘 3：216 表面双稳铁电液晶中的层结构 3：220 三氟甲基芳环类液晶的合成新方法 4：231 液晶聚合物薄膜的介电性能 4：238 利用微锥膜改善反射式液晶显示器件的视角 4：243 电控位相型液晶菲涅耳波带片的特性 4：250 双面电极共面转换液晶光阀 4：257 液晶/聚合物显示器件中的聚合物栅和墙结构 4：265 一种用于液晶分子取向排列的紫外光聚合物PV4研究 4：271 淀积条件对a-SiNx∶H薄膜中含氢基团的影响 4：278 佳化幅选寻址LCD模块响应时间的测量方法 4：284 有机电致发光器件的Buffer Layer及其金属掺杂 4：289 高画质、低功耗的TFT LCD直接驱动方法 4：296 2000　年　目　录 显示技术新进展 1：1 用偏光显微镜解析界面层分子有序度 1：6 磁场对双轴分子液晶的影响 1：17 4-(trans-4-n-烷基环己基甲氧基)-4′-氰基联苯的合成 1：23 低阻α-Ta栅电极材料的制备与研究 1：28 CdSe薄膜晶体管制备工艺的研究 1：35 新型平板显示技术——BSD技术 1：39 PDLC器件显示迟滞效应的改善 1：40 激光退火法低温制备多晶硅薄膜的研究 1：46 光控取向弱锚定表面的液晶分子排列 1：53 PI厚度对LCD功耗电流的影响 1：61 电致磷光及其有机EL的量子效率提高 1：67 激励膜显示器 1：71 薄盒中液晶分子预倾角的测试方法 2：79 铁电液晶SmC*相介电特性的研究 2：85 表面无小丘Al双层栅电极结构研究 2：92 各向异性PDLC散射膜的特性研究 2：101 用于有机EL器件的电极材料 2：108 电致发光显示屏原理、 结构及驱动电路 2：114 液晶材料电阻率测试方法研究 2：120 MAX686在液晶显示技术中的应用 2：125 液晶物理——液晶的连续体理论 2：131 世界TFT LCD产业现状 2：154 OLED显示开发的最新进展 2：159 液晶显示技术的最新进展 3：163 LPP聚酰亚胺取向膜的制备及其取向研究 3：171 光散射液晶偏振片电光特性的研究 3：178 一种新型单偏振片反射式液晶显示器的设计 3：185 液晶调谐滤光片的设计 3：192 掺杂对CdSe-TFT稳定性影响的研究 3：196 一种低成本的立体显示头跟踪装置 3：208 无机显示荧光体研究动态和进展 3：209 液晶物理——液晶的统计理论 3：217 4-烷氧基联苯-4′-甲酸-(4-羧基)苯酯的合成 4：243 金属诱导法低温多晶硅薄膜的制备与研究 4：250 PDLC膜光透射率温度特性的研究 4：255 TFT阵列金属电极的制备与性能 4：260 多孔硅场致电子发射 4：268 阳极氧化条件对多孔硅冷阴极场发射特性的影响 4：273 无机、 有机LED和EL白色发光及绿色照明 4：278 电致发光显示屏在飞机座舱仪表中的应用 4：283 发光二极管光柱显示器 4：288 液晶物理——液晶的流体力学理论 4：295 TFT LCD行业标准的探讨 4：312     

OCB液晶显示的动态驱动特性

研究了强锚定边界条件下光学补偿弯曲排列(OCB)液晶的动态驱动特性。理论模拟计算了OCB液晶盒内液晶分子指向矢在给定电压情况下的分布规律,得到光线垂直入射时液晶盒相对透过率随交流电压有效值的变化曲线。实验测试液晶盒的电光特性,并给出测试液晶盒动态驱动条件下的响应时间及视角特性。     

液晶空间光调制器过驱动方法的FPGA实现

针对空间光调制器系统中,液晶在正常驱动电压下响应时间长,拖慢系统响应速度等问题,对影响液晶响应时间的因素、液晶的弛豫特性以及液晶的过驱动原理进行了分析,提出了一种基于FPGA （Field－Programmable Gate Array）的液晶过驱动方法。其中,相位量化、过驱动表查找、PWM （Pulse Width Modulation）产生均由FPGA完成,该方法不占用CPU （Central Processing Unit）资源,能够更快速响应CPU指令,在硬件方面进一步节省了液晶响应时间。最后搭建实验光路,实验结果表明使用该过驱动方法后,一个调制周期范围内,在5 V过驱动电压下,液晶调制相位上升过程响应时间从500 ms缩短至35 ms;下降过程响应时间从300 ms缩短到36 ms。实现了液晶分子相位的快速偏转,提高系统的响应速度近一个数量级。     

TFT LCD的过压驱动技术探讨

过压驱动技术是提高液晶显示器响应速度的关键技术之一。文章分析了TN型TFT液晶显示的原理及影响响应时间的因素,探讨了过压驱动的原理和系统结构,对灰阶亮度上升和下降两种状态下的应用进行了说明。对液晶显示系统进行了实验分析以及响应时间的测量,结果表明通过过压驱动可以在很大程度上提高液晶显示器的响应时间,有效改善显示画面的动态模糊问题。在0℃的环境温度下,最大灰阶响应时间不超过80ms。     

氧化镍纳米颗粒对光驱动液晶显示的影响

光驱动液晶显示（optically driving liquid crystal display,ODLCD）通过偏振光控制液晶分子的取向来实现显示功能，它已经被广泛应用在各种光电器件中。然而，由于ODLCD较大的擦写时间和响应时间，它在实际应用中仍然受到了一定的限制。本文在ODLCD的光取向层azo dye(SD1)中掺杂了氧化镍（NiO）纳米粒子，并探究了NiO纳米粒子对ODLCD的擦写时间和响应时间的影响。同时，利用扫描电镜、透射电镜和原子力显微镜研究了NiO在SD1取向层的分布和微观形貌。实验结果表明，随着NiO浓度增加，NiO在SD1薄膜的粒径逐渐变大。在不同质量比（1∶0到1∶0.1）的SD1-NiO中，质量比为1∶0.08的SD1-NiO制备的ODLCD具有最小为6.8 s的擦写时间。此外，对于传统的电驱动液晶显示（liquid crystal display,LCD）应用中，掺杂比为1∶0.02的SD1-NiO所制备的ODLCD的响应时间被降低5 ms。     

用于防伪商标的液晶柔性显示薄膜

本文设计了一款机械性能优异和具有独特防伪功能的液晶柔性显示薄膜。首先,基于光控取向技术设计了一款具备双通道显示功能的液晶显示器件,通过光场调控实现两个通道的独立显示。其次,以液晶盒厚度作为对照组确定了最佳厚度,使两个独立图案形成主副显示效果,从而隐藏防伪信息。最后,通过在液晶-聚合物复合材料中掺杂银纳米线（AgNWs）改善了液晶显示薄膜的机械拉伸性能。实验结果表明,在液晶柔性显示薄膜厚度为60μm时,其呈现令人满意的图案显示效果。同时,与未掺杂AgNWs的液晶显示薄膜相比,掺杂了AgNWs的液晶柔性薄膜的模量参数提高了30%以上,具备更大的应力承受能力和应变范围。本研究对于制备信息丰富且稳定性强的液晶防伪商标具有积极意义。     

添加液晶对PDLC膜电-光性能参数的影响

以甲基丙烯酸β羟乙酯为聚合单体,以SLC7011-100为液晶材料,利用紫外光聚合分相法制备了PDLC薄膜。通过调节单体和液晶成分的比例,在尽可能提高膜的对比度的情况下降低驱动电压,以获得电-光性能良好的PDLC膜。分别向体系添加壬烷氧基和癸烷氧基联苯氰基液晶、烷基联苯氰基类液晶5CB和8CB,考察了PDLC膜电-光性能的变化,结果表明,添加液晶的含量和分子结构对PDLC膜的折射率、对比度等电-光性能参数有较大影响。     

混合扭曲向列相模式的液晶盒参数对硅基液晶显示器的影响

90°混合扭曲向列相液晶(MTN)模式因其良好的关态色散特性、低驱动电压而被应用于小型或者微型硅基液晶显示器(LCOS)。针对MTN模式,模拟研究了液晶弹性常数、介电各向异性、预倾角以及盒厚变化对显示效果的影响,研究结果为硅基液晶显示器的开发提供了一定的理论依据。     

扭曲向列相液晶在复合消色差延迟器件中的应用

借助琼斯矩阵对扭曲向列相(TN)液晶的光学性能进行了分析,发现在外加电压调制下的TN液晶盒,在选取的液晶厚度合适时,可等效为对应液晶厚度的特定波长λ/2波片,通过合理的设计搭配,与两个λ/4波片进行组合,使其整体作为一个偏振调制元件。经计算可知,当所加电压大于TN液晶盒转向的阈值电压时,其作用相当于一个消色差的λ/4波片或λ/2波片;当撤掉外加电压时可作为一般的90°旋光器。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks