Low-Temperature Pulsed-PECVD ZnO Thin-Film Transistors

We report high-quality ZnO thin films deposited at low temperature (200°C) by pulsed plasma-enhanced chemical vapor deposition (pulsed PECVD). Process byproducts are purged by weak oxidants N₂O or CO₂ to minimize parasitic CVD deposition, resulting in high-refractive-index thin films. Pulsed-PECVD-deposited ZnO thin-film transistors were fabricated on plasma-enhanced atomic layer deposition (PEALD) Al₂O₃ dielectric and have a field-effect mobility of 15 cm²/V s, subthreshold slope of 370 mV/dec, threshold voltage of 6.6 V, and current on/off ratio of 10⁸. Thin-film transistors (TFTs) on thermal SiO₂ dielectric have a field-effect mobility of 7.5 cm²/V s and threshold voltage of 14 V. For these devices, performance may be limited by the interface between the ZnO and the dielectric.     

Preparation,Infrared Emissivity,and Dielectric and Microwave Absorption Properties of Fe-Doped ZnO Powder

Fe-doped ZnO powders have been synthesized by the coprecipitation method using zinc nitrate [Zn(NO₃)₂·6H₂O] as starting material, urea [CO(NH₂)₂] as precipitator, and ferric nitrate [Fe(NO₃)₃·9H₂O] as doping source. The microstructure of the prepared powders has been characterized by x-ray diffraction and scanning electron microscopy. Results show that, when the molar ratio of Fe to (Zn + Fe) was less than 0.09, the prepared powder was ZnO(Fe) solid solution, and the ZnFe₂O₄ impurity phase appeared when the Fe doping content was further increased. The electric permittivity in the frequency range of 8.2 GHz to 12.4 GHz and the average infrared emissivity in the wavelength range of 8 μm to 14 μm have been determined for the prepared powders. The average infrared emissivity decreased with increasing Fe doping content. The real (ε′) and imaginary part (ε″) of the permittivity of the prepared powders showed opposite trends. When the molar ratio of Fe to (Zn + Fe) was 0.03, the prepared Fe-doped ZnO powder demonstrated the best microwave absorption in the frequency range of 8.2 GHz to 12.4 GHz.     

竹节形碳纳米管的制备

采用乙醇催化燃烧法制备竹节形碳纳米管,利用乙醇作为碳源和燃料提供材料生长所需的能量,以Cu薄片作为基底,FeCl3与Fe(NO3)3作为催化剂先体。通过扫描电子显微镜(SEM)、透射电子显微镜(TEM)、喇曼光谱对黑色絮状的沉积产物进行表征。实验结果表明,产物中的碳纳米管具有较好的竹节形结构,竹节形碳纳米管的形貌和微结构与独特的制备条件有关。并对竹节形碳纳米管的生成机理进行了初步探讨。     

竹节形碳纳米管的制备

采用乙醇催化燃烧法制备竹节形碳纳米管，利用乙醇作为碳源和燃料提供材料生长所需的能量，以Cu薄片作为基底，FeCl3与Fe（NO3）3作为催化剂先体。通过扫描电子显微镜（SEM）、透射电子显微镜（TEM）、喇曼光谱对黑色絮状的沉积产物进行表征。实验结果表明，产物中的碳纳米管具有较好的竹节形结构，竹节形碳纳米管的形貌和微结构与独特的制备条件有关。并对竹节形碳纳米管的生成机理进行了初步探讨。     

Influence of ZnO Inclusions on the Low-Temperature Thermoelectric Properties of CoSb3

CoSb₃ composites with different amounts of ZnO nanoparticles (2?wt.% to 12?wt.%) were prepared from nanosized ZnO (commercial) and micron-sized CoSb₃ (obtained via solid-state reaction) particles mixed in solution and freeze dried. The resulting powders were densified by spark plasma sintering. The samples were characterized by x-ray diffraction and scanning electron microscopy. It was found that ZnO forms micron-sized clusters at the grain boundaries of the matrix material. The thermoelectric properties (electrical resistivity, thermopower, and thermal conductivity) were measured in the 2?K to 300?K temperature range. Both the electrical and thermal conductivities were observed to decrease with increasing ZnO content. The dimensionless figure of merit ZT was improved by up to 30% at 300?K for the sample containing 2?wt.% ZnO.     

Low-Temperature Synthesis and Thermoelectric Properties of n-Type PbTe

n-Type PbTe compounds were synthesized at temperatures as low as 430°C. After synthesis, the materials were ground, cold pressed, and sintered at 600°C. The effect of this low-temperature synthesis on the structural features and thermoelectric properties of as-prepared and PbI₂-doped materials was investigated for the first time. The Seebeck coefficient, and electrical and thermal conductivity were measured in the temperature range 2 K ≤ T ≤  610 K. The results show that all materials exhibit n-type conduction and the thermoelectric properties are improved by doping. ZT values reach 0.5 at 610 K, and the discrepancies with the literature are discussed.     

用MOCVD方法在GaAs衬底上低温生长ZnO薄膜

采用二乙基锌(DEZn)和水(H2O)作为生长源,利用金属有机化学气相沉积(MOCVD)的方法,在100～400℃低温范围内,在GaAs(001)衬底上制备了ZnO薄膜.利用X射线衍射(XRD),室温PL,AFM,SEM研究了薄膜的晶体结构特性、发光特性及表面形貌特性.XRD分析表明ZnO薄膜具有很强的c轴取向,(002)峰的FWHM平均值为0.3°.当生长温度达到400℃时从SEM测量结果可以观察到薄膜表面呈六角状结晶.随着生长温度的升高,薄膜的晶粒尺寸变大,结晶质量得到提高但同时表面变粗糙.室温PL测量显示薄膜在370nm附近有强的近带边发射,没有观测到深能级发射峰.     

硅纳米管的水热法合成与表征

采用水热法成功合成了新型的硅纳米管一维纳米材料,并采用透射电子显微镜、选区电子衍射分析、能量色散光谱及高分辨透射电子显微镜对合成的硅纳米管进行了表征.研究表明硅纳米管是一种多壁纳米管,为立方金刚石结构,生长顶端呈半圆形的闭合结构,由内部为数纳米的中空结构,中部为晶面间距约0.31nm的晶体硅壁层,最外层为低于2nm的无定形二氧化硅等三部分组成.     

Synthesis of Carbon Nanotubes Using Microwave Radiation

We report a method for the synthesis of carbon nanotubes (CNTs) by microwave irradiation. CNTs were successfully synthesized by microwave heating of the catalyst loaded on various supports such as carbon black, silica powder, or organic polymer substrates (Teflon and polycarbonate). Microwave (2.45 GHz, 800 W) irradiation used acetylene as a hydrocarbon source, and 3d transition metals and metal sulfides were used as the catalysts. Different carbon yields and morphologies were obtained depending on the reaction conditions. Fibrous nanocarbons—linear or Y‐branched—were observed as well as carbon nanoparticles and amorphous carbon. High‐resolution transmission electron microscopy (HRTEM) revealed that these fibrous nanocarbons are either multiwalled CNTs or graphitic nanofibers (GNFs). This novel method has the potential to grow CNTs virtually on any substrate provided its absorption of microwave energy is small.     

硅纳米管的水热法合成与表征

采用水热法成功合成了新型的硅纳米管一维纳米材料,并采用透射电子显微镜、选区电子衍射分析、能量色散光谱及高分辨透射电子显微镜对合成的硅纳米管进行了表征．研究表明硅纳米管是一种多壁纳米管,为立方金刚石结构,生长顶端呈半圆形的闭合结构,由内部为数纳米的中空结构,中部为晶面间距约0.31nm的晶体硅壁层,最外层为低于2nm的无定形二氧化硅等三部分组成．     

ZnO Thin Film, Device, and Circuit Fabrication using Low-Temperature PECVD Processes

We report undoped ZnO films deposited at low temperature (200°C) using plasma-enhanced chemical vapor deposition (PECVD). ZnO thin-film transistors (TFTs) fabricated using ZnO and Al₂O₃ deposited in situ by PECVD with moderate gate leakage show a field-effect mobility of 10 cm²/V s, threshold voltage of 7.5 V, subthreshold slope <1 V/dec, and current on/off ratios >10⁴. Inverter circuits fabricated using these ZnO TFTs show peak gain magnitude (dV _out/dV _in) ~5. These devices appear to be strongly limited by interface states and reducing the gate leakage results in TFTs with lower mobility. For example, ZnO TFTs fabricated with low-leakage Al₂O₃ have mobility near 0.05 cm²/V s, and five-stage ring-oscillator integrated circuits fabricated using these TFTs have a 1.2 kHz oscillation frequency at 60 V, likely limited by interface states.     

采用丙酮催化燃烧法制备多壁碳纳米管

为了探索一种简单而有效的制备多壁碳纳米管的方法,以丙酮为碳源,硝酸镍为催化剂先体,通过催化燃烧工艺在铜薄片基底上制备了多壁碳纳米管.采用扫描电子显微镜、透射电子显微镜、拉曼光谱仪对样品进行表征.结果表明,采用丙酮催化燃烧工艺合成出了多壁碳纳米管.通过拉曼光谱分析,估算了样品中的缺陷含量.该实验方法较之其它方法具有实验装置简单、易于操作、实验成本低、制备周期短等特点.     

碳纳米管的大面积合成及磁性(英文)

通过溶胶凝胶法和氢气还原法制备出Co纳米颗粒并以此作为催化剂材料,通过催化裂解苯的方法,实现了较低温度(460℃)下在Co纳米颗粒表面上合成碳纳米管。采用X射线衍射、激光喇曼光谱、场发射扫描电镜、透射电子显微镜和振动样品磁强计对所合成的碳纳米材料进行了表征。通过优化实验参数,可制备出最大产率和纯度分别为约50和98.02%(质量分数)的碳纳米管。由于铁磁性Co纳米颗粒的进入,使得整个复合物表现出比较好的磁性能。和以往以苯作为碳源合成碳纳米材料相比,此合成方案简单、成本低,且对环境无任何危害,非常适用于磁性碳纳米复合物的批量合成。     

Low-Temperature Preparation of Undoped ZnO Films with High Transparency and Conductivity by Ion Beam Deposition

Low-temperature growth of undoped ZnO films with high transparency and low electrical resistance was performed by ion beam sputtering. After systematic testing, resistivity as low as 2.95 × 10⁻³ Ω cm was obtained at a substrate temperature of 150°C, ion source voltage of 850 V, and ion beam current of 30 mA. The transmittance of the ZnO films was in the range of 85% to 90%. Hall measurements showed that a high mobility of 21.41 cm²/Vs was obtained for films less than 200 nm thick. The related microstructures and physical properties were measured and are discussed.     

Synthesis of Core–Shell Inorganic Nanotubes

New materials and techniques pertaining to the synthesis of inorganic nanotubes have been ever increasing since the initiation of the field in 1992. Recently, WS₂ nanotubes, which are produced now in large amounts, were filled with molten lead iodide salt by a capillary wetting process, resulting in PbI₂@WS₂ core–shell nanotubes. This work features progress in the synthesis of new core–shell nanotubes, including BiI₃@WS₂ nanotubes produced in a similar same manner. In addition, two new techniques for obtaining core–shell nanotubes are presented. The first is via electron‐beam irradiation, i.e., in situ synthesis within a transmission electron microscope. This synthesis results in SbI₃ nanotubes, observed either in a hollow core of WS₂ ones (SbI₃@WS₂ nanotubes), or atop of them (WS₂@SbI₃ nanotubes). The second technique involves a gaseous phase reaction, where the layered product employs WS₂ nanotubes as nucleation sites. In this case, the MoS₂ layers most often cover the WS₂ nanotube, resulting in WS₂@MoS₂ core–shell nanotubes. Notably, superstructures of the form MoS₂@WS₂@MoS₂ are occasionally obtained. Using a semi‐empirical model, it is shown that the PbI₂ nanotubes become stable within the core of MoS₂ nanotubes only above a critical core diameter of the host (>12 nm); below this diameter the PbI₂ crystallizes as nanowires. These model calculations are in agreement with the current experimental observations, providing further support to the growth mechanism of such core–shell nanotubes.     

ZnO Nanowires,Nanotubes, and Complex Hierarchical Structures Obtained by Electrochemical Deposition

Increasing the aspect ratio of ZnO nanostructures is one possible strategy to improve their thermoelectric properties. ZnO nanostructures with one-dimensional (1D) and three-dimensional (3D) morphologies were obtained using electrochemical deposition. Adjusting various deposition parameters made it possible to obtain arrays of vertically aligned ZnO nanowires (NWs) with controlled dimensions, density, and electrical properties. The concentrations of zinc or chloride ions in the solution were found to be key parameters. ZnO NWs were transformed into ZnO nanotubes (NTs), with an increased aspect ratio compared with the NWs, by selectively dissolving the core of the ZnO NWs in a concentrated KCl solution. The aspect ratio was strongly increased when the ZnO NWs were hierarchically organized in a 3D morphology. The synthesis of thin films composed of ordered hollow urchin-like ZnO NW structures was performed by combining the electrochemical deposition and polystyrene sphere templating methods. The electronic properties of the urchin-like ZnO structures were investigated by means of photoluminescence and transmission measurements.     

基于微流体的ZnO纳米线的合成

微流控芯片在纳米材料的合成方面具有突出的优势,在芯片中通过微流体的操控制备ZnO纳米线,并利用扫描电子显微镜(SEM)、X射线衍射仪(XRD)和能谱仪(EDS)对制备得到的ZnO纳米线的表面形貌、晶体结构及成分进行表征。实验结果表明,在具有微腔室结构的微通道中可以构建浓度梯度,从而在单一通道中制备得到形貌及尺寸不同的致密ZnO纳米线,成为高效探索纳米材料合成条件的便捷手段。分别以玻璃片、ZnO种子层和ZnO纳米线为载体,对异硫氰酸荧光素标记的羊抗牛IgG抗体进行荧光检测,发现ZnO纳米线可显著增强荧光信号。     

ZnO纳米管的制备及光学特性研究

ZnO nanotubes have been fabricated through a carbon thermal reduction deposition process. Structure characterization results show that the ZnO nanotubes have a single crystalline wurtzite hexagonal structure pref- erentially oriented in the c-axis. The diameters of ZnO nanotubes are in the range of 90-280 nm and the wall thickness is about 50-100 nm. Room-temperature photoluminescence measurements of the ZnO nanotubes exhibit an intensive ultraviolet peak at 377 nm and a broad peak centered at about 517 nm. The UV emission is caused by the near band edge emission while the green emission may be attributed to both oxygen vacancy and the surface state. Raman and cathodoluminescence spectra are also discussed. Finally, a possible growth mechanism of the ZnO nanotubes is proposed.     

碳纳米管的制备、修饰及其应用

简要介绍了碳纳米管的制备及其纯化技术，以及近年来碳纳米管修饰、管内填充方面的研究，并概述了碳纳米管在复合材料、发光材料、纳米器件方面的应用及其在固体基片上的定向组装。     

螺旋碳纳米管的制备、表征及性能

采用溶胶-凝胶结合氢气还原方法制备了Ni纳米颗粒,并用这种Ni纳米颗粒作为催化剂,通过催化裂解乙炔的方法在425℃制备了螺旋度较高且呈对称生长的螺旋碳纳米管。结果表明,本方法简单、成本低、环境友好,可大量制备高纯度螺旋碳纳米管。场发射扫描电镜(FE-SEM)及高分辨透射电镜(HR-TEM)图片表明,通常情况下两根旋向相反的螺旋碳纳米管生长在一个催化剂颗粒上,且这种纳米螺旋呈空心管状。X射线衍射及拉曼光谱分析表明,所得样品成分为有缺陷的石墨结构和镍多晶,未发现其他杂相。此外,对样品的磁性及微波吸收性能进行了研究。