Enhancement of the dielectric,piezoelectric, and ferroelectric properties in BiYbO3-modified (Ba0.85Ca0.15)(Ti0.9Zr0.1)O3 lead-free ceramics

Lead-free (1−x)(Ba_0.85Ca_0.15)(Ti_0.9Zr_0.1)O₃−xBiYbO₃ [(1−x)BCTZ−xBYO] piezoelectric ceramics in the range of BYO concentrations were prepared by the conventional oxide-mixed method, and the effect of BYO content on their microstructure, crystalline structure, density and electrical properties was investigated. A dense microstructure with large grain was obtained for the ceramics with the addition of BYO. The ceramics with x=0.1% exhibit an optimum electrical behavior of d₃₃~580 pC/N, r~10.9 Ω, k_p~56.4%, and tan δ~1.12% when sintered at a low temperature of ~1350 °C. When the measuring electric field is 40 kV/cm, the well-saturated and square-like P–E loops for the ceramics were observed with P_r~12.2 μC/cm² and E_c~1.83 kV/cm.     

High energy-storage properties of [(Bi1/2Na1/2)0.94 Ba0.06] La(1−x) ZrxTiO3 lead-free anti-ferroelectric ceramics

Energy-storage properties of [(Bi_1/2Na_1/2)_0.94Ba_0.06]La_(1−x)Zr_xTiO₃ (BNT-BLZT, x=0, 0.02, 0.04, and 0.06) lead-free anti-ferroelectric ceramics fabricated via the conventional sintering technique were first investigated. Calculation from the X-ray diffraction results reveals that BNT-BLZT ceramic possesses a single perovskite structure phase. In addition, the P–E hysteresis loops measured at room temperature show that the BNT-BLZT (x=0.02) ceramics obtain the maximum P value of 37.5 μC/cm² and the largest energy-storage density W_max is 1.58 J/cm³. The temperature dependence of dielectric permittivity ε_r and dielectric loss tanδ illustrate that the addition of Zr can improve the piezoelectric properties of BT-BLZT ceramics. These properties indicate that BNT-BLZT ceramics might be a promising lead-free anti-ferroelectric material for energy storage application.     

Microstructure, electrical properties, and aging behavior of ZnO-Pr6O11-CoO-Cr2O3-Y2O3-Er2O3 varistor ceramics

The microstructure, electrical properties, and aging behavior of the ZnO-Pr₆O₁₁-CoO-Cr₂O₃-Y₂O₃-Er₂O₃ varistor ceramics were investigated for different contents of Er₂O₃. The microstructure consisted of ZnO grain and an intergranular layer (Pr, Y, and Er-rich phases) as a secondary phase. The increase of Er₂O₃ content decreased the average grain size and increased the sintered density. As the Er₂O₃ content increased, the breakdown field increased from 4206 V/cm to 5857 V/cm and the nonlinear coefficient increased from 32.6 to 48.6. The varistor ceramics added with 1.0 mol% Er₂O₃ exhibited excellent stability by exhibiting −0.2% in the variation rate of the breakdown field and −2.7% in the variation rate of the nonlinear coefficient for aging stress of 0.95 E_1 mA/150 °C/24 h.     

Sintering and electrical properties of La-modified (Na0.52K0.45Li0.03)1−3xLax(Nb0.88Sb0.09Ta0.03)O3 lead-free ceramics

(Na_0.52K_0.45Li_0.03)_1−3xLa_x(Nb_0.88Sb_0.09Ta_0.03)O₃ (NKLL_xNST) lead-free ceramics were prepared by normal sintering and their dielectric and piezoelectric properties were investigated. The X-ray methods indicate that the NKLL_xNST ceramics with x≤0.003 present a pure perovskite phase at room temperature. The bulk density of NKLL_xNST ceramics increases with proper amount of La₂O₃ contents, and reaches its highest value of 4.544 g/cm³ with the addition of 0.3 mol% La₂O₃. At x=0.003, remnant polarization P_r, piezoelectric constant d₃₃ and planar mode electromechanical coupling factor k_p of NKLL_xNST ceramics reach the highest values of 37.80 μC/cm², 346 pC/N and 40%, respectively, exhibiting excellent “soft” piezoelectric characteristics, demonstrating a tremendous potential of the compositions studied for device applications.     

Composition and poling condition-induced electrical behavior of (Ba0.85Ca0.15)(Ti1−xZrx)O3 lead-free piezoelectric ceramics

Lead-free (Ba_0.85Ca_0.15)(Ti_1−xZr_x)O₃ (BCTZ) piezoelectric ceramics were fabricated by normal sintering in air atmosphere. BCTZ ceramics with x = 0.10 possess a coexistence of tetragonal and rhombohedral phases at ∼40 °C. The Curie temperature of BCTZ ceramics decreases with increasing the Zr content. Piezoelectric properties of BCTZ ceramics are dependent on the poling conditions (i.e., the poling temperature and the poling electric field), and the underlying physical mechanism is illuminated by the phase angle. The BCTZ (x = 0.10) ceramic, which locates at the existence of two phases and is poled at E ∼ 4.0 kV/mm and T_p ∼ 40 °C, exhibits an optimum electrical behavior at a room temperature of ∼20 °C: d₃₃ ∼ 423 pC/N, k_p ∼ 51.2%, 2P_r ∼ 18.86 μC/cm², 2E_c ∼ 0.47 kV/mm, ?_r ∼ 2892, and tan δ ∼ 1.53%.     

Effect of Eu doping on structure and electrical properties of lead-free (Bi0.5Na0.5)0.94Ba0.06TiO3 ceramics

Eu-doped (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ (BNBT6-xEu, x=0.00–2.00 at%) lead-free piezoelectric ceramics have been synthesized by the solution combustion method. The effect of Eu doping concentration on the phase structure, microstructure and electrical properties of BNBT6 ceramics has been investigated. The XRD analysis confirms that the europium additive incorporates into the BNBT6 lattice and results in a phase transition from the coexistence of rhombohedral and tetragonal phases to a more symmetric pseudocubic phase. The SEM images indicate that the europium additive has little effect on the ceramic microstructure and the average grain size is about 2.0 μm. The electrical properties of BNBT6 ceramics can be improved by appropriate Eu doping. The 0.25 at% Eu doped BNBT6 ceramic presents excellent electrical properties: piezoelectric constant d₃₃=149 pC/N, remnant polarization P_r=40.27 μC/cm², coercive field E_c=2.95 kV/mm, dielectric constant ε_r=1658 and dissipation factor tan δ=0.0557 (10 kHz).     

Enhanced ferroelectric properties in (Ba1−xCax)(Ti0.94Sn0.06)O3 lead-free ceramics

Lead-free (Ba_1−xCa_x)(Ti_0.94Sn_0.06)O₃ (BCST) (x = 0.01-0.04) ceramics were prepared using a solid-state reaction technique. The effects of Ca content on the phase structure and electrical properties of the BCST ceramics were investigated. High piezoelectric coefficient of d₃₃ = 440 pC/N, planar electromechanical coupling factor of k_p = 45% and dielectric constant ?_r = 6900 were obtained for the samples at x = 0.03. At room temperature, a polymorphic phase transition (PPT) from orthorhombic phase to tetragonal phase was identified in the composition range of 0.02 < x < 0.04.     

Structural and electrical properties of 0.56Pb(Ni1/3Nb2/3)O3-0.10Pb(Zn1/3Nb2/3)O3-0.34PbTiO3 ceramics prepared by different ceramic processings

The ternary system of 0.56Pb(Ni_1/3Nb_2/3)O₃-0.10Pb(Zn_1/3Nb_2/3)O₃-0.34PbTiO₃ (0.56PNN-0.10PZN-0.34PT) ceramics were prepared by conventional solid-state reaction method via straight mixed oxide method, columbite precursor method and B-site oxide mixing route. X-ray diffraction (XRD) measurement demonstrated that both the tetragonal and rhombohedral phases coexist in the B-site oxide mixing route prepared ceramics accompanied by the largest content of perovskite phase of 95.18%. The 0.56PNN-0.10PZN-0.34PT ceramics prepared by the straight mixed oxide method and the B-site oxide mixing route exhibit rather homogeneous microstructure. As a comparison, in the columbite precursor method prepared ceramics nebulous granules and octahedral or other polyhedral morphology grains are observed. All the sintered ceramics exhibit diffused ferroelectric phase transition where the dielectric response peaks are broad, diffused and strongly frequency dependent. However, the temperature of dielectric maximum (T_m) increases greatly from 398.0 K of the 0.56PNN-0.10PZN-0.34PT ceramics prepared by the B-site oxide mixing route to 423.3 K of the ones prepared by the straight mixed oxide method. Saturated and symmetric P-E hysteresis loops are observed in all the sintered ceramics, where the B-site oxide mixing route prepared ceramics exhibit large value of remanent polarization (P_r) of 17.13 μC/cm² and the least value of coercive field (E_c) of 11.99 kV/cm. Piezoelectric constant (d₃₃) exhibits the largest value of 449 pC/N for the ceramics prepared by the B-site oxide mixing route. Such results are related to the phase composition, density and porosity of the ceramics.     

The PZT system (PbTixZr1−xO3, 0≤x≤1.0): The dependences of electrophysical properties of solid solutions on the electric field strength and component concentration (Part 5)

The physical properties of PZT (PbTi_xZr_1−xO₃, 0.0≤x≤1.0) ceramics were studied in broad ranges of constant and alternating electric field strengths (0 kV/cm≤E≤30 kV/cm). Dielectric, piezoelectric and elastic parameters of the solid solutions at room temperature were investigated. The results can be helpful to develop of PZT based materials for use in various high-voltage devices and bend components such as varactors, phase shifters, etc.     

Fabrication and electrical properties of Pb(Co1/3Nb2/3)O3 ceramics

Pb(Co_1/3Nb_2/3)O₃ (PCN) ceramics have been produced by sintering PCN powders synthesized from lead oxide (PbO) and cobalt niobate (CoNb₂O₆) with an effective method developed for minimizing the level of PbO loss during sintering. Attention has been focused on relationships between sintering conditions, phase formation, density, microstructural development, dielectric and ferroelectric properties of the sintered ceramics. From X-ray diffraction analysis, the optimum sintering temperature for the high purity PCN phase was found at approximately 1050 and 1100 °C. The densities of sintered PCN ceramics increased with increasing sintering temperature. However, it is also observed that at very high temperature the density began to decrease. PCN ceramic sintered at 1050 °C has small grain size with variation in grain shape. There is insignificant change of dielectric properties with sintering temperature. The P–E hysteresis loops observed at −70 °C are of slim-loop type with small remanent polarization values, which confirmed relaxor ferroelectric behavior of PCN ceramics.     

Microwave dielectric properties of Ba3Ti4−x(Zn1/3Nb2/3)xNb4O21 for low temperature co-fired ceramics

The effects of substitution of (Zn_1/3Nb_2/3) for Ti on the sintering behavior and microwave dielectric properties of Ba₃Ti_4−x(Zn_1/3Nb_2/3)_xNb₄O₂₁ (0 ≤ x ≤ 4) ceramics have been investigated. The dielectric constant (?_r) and the temperature coefficient of the resonant frequency (τ_f) of Ba₃Ti_4−x(Zn_1/3Nb_2/3)_xNb₄O₂₁ ceramics decreased with increasing x. However, the Q × f values enhanced with the substitution of (Zn_1/3Nb_2/3) for Ti. It was found that a small amount of MnCO₃-CuO (MC) and ZnO-B₂O₃-SiO₂ (ZBS) glass additives to Ba₃Ti_4−x(Zn_1/3Nb_2/3)_xNb₄O₂₁ (x = 2) ceramics lowered the sintering temperature from 1250 to 900 °C. And Ba₃Ti_4−x(Zn_1/3Nb_2/3)_xNb₄O₂₁ (x = 2) ceramics with 1 wt% MC and 1 wt% ZBS sintered at 900 °C for 2 h showed excellent dielectric properties: ?_r = 53, Q × f = 14,600 GHz, τ_f = 6 ppm/°C. Moreover, it has a chemical compatibility with silver, which made it as a promising material for low temperature co-fired ceramics technology application.     

Effect of Ta2O5 in (Ca,Si, Ta)-doped TiO2 ceramic varistors

TiO₂ varistors doped with 0.2 mol% Ca, 0.4 mol% Si and different concentrations of Ta were obtained by ceramic sintering processing at 1350 °C. The effect of Ta on the microstructures, nonlinear electrical behavior and dielectric properties of the (Ca, Si, Ta)-doped TiO₂ ceramics were investigated. The ceramics have nonlinear coefficients of α = 3.0–5.0 and ultrahigh relative dielectric constants which is up to 10⁴. Experimental evidence shows that small quantities of Ta₂O₅ improve the nonlinear properties of the samples significantly. It was found that an optimal doping composition of 0.8 mol% Ta₂O₅ leads to a low breakdown voltage of 14.7 V/mm, a high nonlinear constant of 4.8 and an ultrahigh electrical permittivity of 5.0 × 10⁴ and tg δ = 0.66 (measured at 1 kHz), which is consistent with the highest and narrowest grain boundary barriers of the ceramics. In view of these electrical characteristics, the TiO₂–0.8 mol% Ta₂O₅ ceramic is a viable candidate for capacitor–varistor functional devices. The characteristics of the ceramics can be explained by the effect and the maximum of the substitution of Ta⁵⁺ for Ti⁴⁺.     

Phase diagram and properties of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 polycrystalline ceramics

yPb(In_1/2Nb_1/2)O₃-(1 − x − y)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃ (yPIN-(1 − x − y)PMN-xPT) polycrystalline ceramics with morphotropic phase boundary (MPB) compositions were synthesized using columbite precursor method. X-ray diffraction results indicated that the MPB of PIN-PMN-PT was located around PT = 0.33-0.36, confirmed by their respective dielectric, piezoelectric and electromechanical properties. The optimum properties were found for the MPB composition 0.36PIN-0.30PMN-0.34PT, with dielectric permittivity ?_r of 2970, piezoelectric coefficient d₃₃ of 450 pC/N, planar electromechanical coupling k_p of 49%, remanent polarization P_r of 31.6 μC/cm² and T_C of 245 °C. According to the results of dielectric and pyroelectric measurements, the Curie temperature T_C and rhombohedral to tetragonal phase transition temperature T_R-T were obtained, and the “flat” MPB for PIN-PMN-PT was achieved, indicating that the strongly curved MPB in PMN-PT system was improved by adding PIN component, offering the possibility to grow single crystals with high electromechanical properties and expanded temperature usage range (limited by T_R-T).     

Effect of MnO2 addition on the structure and electric properties of (Ba0.94Ca0.06)(Ti0.9Sn0.1)O3 ceramics

The (Ba_0.94Ca_0.06)(Ti_0.9Sn_0.1)O₃ (BCTS) ceramics with pure perovskite structure were prepared by conventional solid-state reaction route with the addition of 0–0.8?mol% MnO₂. The crystal structure, microstructure, and electric properties were investigated systematically. X-ray diffraction patterns showed that the addition of MnO₂ changed the ratio of the coexistence of orthorhombic and tetragonal phases, which had apparent influences on the piezoelectric properties of ceramics. When the addition amount is 0.2?mol%, the average grain size increases from ~41.88–52.24?µm, and, however, the average grain size decreases with further addition > 0.2?mol%. A good combination of properties and performance could be achieved with the addition of 0.4?mol% MnO₂. The mechanical quality factor Q_m, dielectric loss tanδ, piezoelectric constant d₃₃, and planar electromechanical coefficient k_p measured are 216, 0.011, 578?pC/N, and 0.39, respectively. Therefore, results of this study suggest that the BCTS-Mn ceramics synthesized could exhibit a great potential for piezoelectric component applications.     

Microstructure and piezoelectric properties of CuO-doped 0.95(K0.5Na0.5)NbO3-0.05Li(Nb0.5Sb0.5)O3 lead-free ceramics

The effects of sintering temperature and the addition of CuO on the microstructure and piezoelectric properties of 0.95(K_0.5Na_0.5)NbO₃-0.05Li(Nb_0.5Sb_0.5)O₃ were investigated. The KNN-5LNS ceramics doped with CuO were well sintered even at 940 °C. A small amount of Cu²⁺ was incorporated into the KNN-5LNS matrix ceramics and XRD patterns suggested that the Cu²⁺ ion could enter the A or B site of the perovskite unit cell and replace the Nb⁵⁺ or Li⁺ simultaneously. The study also showed that the introduction of CuO effectively reduced the sintering temperature and improved the electrical properties of KNN-5LNS. The high piezoelectric properties of d₃₃ = 263 pC/N, k_p = 0.42, Q_m = 143 and tan δ = 0.024 were obtained from the 0.4 mol% CuO doped KNN-5LNS ceramics sintered at 980 °C for 2 h.     

Effect of Bi2O3 additives on sintering and microwave dielectric behavior of La(Mg0.5Ti0.5)O3 ceramics

Bi₂O₃ was selected as liquid phase sintering aid to lower the sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics. The sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics is generally high, about 1600 °C. However, the sintering temperature was significantly lowered about 275 °C from 1600 °C to 1325 °C by incorporating in 15 mol% Bi₂O₃ and revealed the optimum microwave dielectric properties of dielectric constant (?_r) value of 40.1, a quality factor (Q × f) value of 60,231 GHz, and the temperature coefficient (τ_f) value of 70.1 ppm/°C. During all addition ranges, the relative dielectric constants (?_r) were different and ranged from 32.0 to 41.9, the quality factors (Q × f) were distributed in the range of 928–60,231 GHz, and the temperature coefficient (τ_f) varies from 0.3 ppm/°C to 70.3 ppm/°C. Noticeably, a nearly zero τ_f can be found for doping 5 mol% Bi₂O₃ sintering at 1325 °C. It implies that nearly zero τ_f can be achieved by appropriately adjusting the amount of Bi₂O₃ additions and sintering temperature for La(Mg_0.5Ti_0.5)O₃ ceramics.     

Temperature dependence of piezoelectric properties on Nd and V co-substituted Bi4Ti3O12 ceramics for ceramic resonator applications

The temperature dependences of the piezoelectric properties of (Bi_4−yNd_y)_1−(x/12)(Ti_3−xV_x)O₁₂ [BNTV-x, y (x = 0.01, y = 0.00–1.00)] were investigated for environmentally friendly lead-free piezoelectric ceramic resonators with low-temperature coefficients of resonance frequency, TC-f. The |TC-f| in the (33) mode improved with increasing concentration of modified Nd ions, y, and exhibited the smallest |TC-f| value of 77.4 ppm/°C at y = 0.75 (BNTV-0.75). The |TC-f| in the other vibration mode (t), was also investigated for the BNTV-0.75 ceramic, and a smaller value of 42 ppm/°C was obtained. The (t) mode of the BNTV-0.75 ceramic showed excellent piezoelectric properties: Q_m = 4200, Q_e max = 31 and TC-f = −49.8 ppm/°C. These properties are very similar to those of commercialized hard PZT ceramics for resonator applications. The BNTV-0.75 ceramic seems to be a superior candidate material for lead-free piezoelectric applications of ceramic resonators.     

Investigation of ternary system Pb(Sn,Ti)O3-Pb(Mg1/3Nb2/3)O3 with morphotropic phase boundary compositions

(1 − x)Pb(Sn_1−yTi_y)O₃-xPb(Mg_1/3Nb_2/3)O₃ (x = 0.1-0.4, y = 0.45-0.65) ternary system was prepared using two-step columbite precursor method. Phase structure of the synthesized ceramics was studied by using X-ray powder diffraction and the morphotropic phase boundary (MPB) curve of the ternary system was confirmed. The isothermal map of Curie temperature (T_C) in the phase diagram was obtained based on the dielectric-temperature measurements. The coercive field E_C and internal bias field E_i were found to increase with increasing PT content, while decrease with increasing PMN content. The optimum properties were achieved in the MPB composition 0.8Pb(Sn_0.45Ti_0.55)O₃-0.2Pb(Mg_1/3Nb_2/3)O₃, with dielectric permittivity ?_r, piezoelectric coefficient d₃₃, planar electromechanical coupling k_p, mechanical quality factor Q_m and T_C of being on the order of 3040, 530pC/N, 55.5%, 320 and 190 °C, respectively, exhibiting potential usage for high power application.     

Effects of Sb content on electrical properties of lead-free piezoelectric (K0.4425Na0.52Li0.0375) (Nb0.9625−xSbxTa0.0375)O3 ceramics

Lead-free (K_0.4425Na_0.52Li_0.0375) (Nb_0.9625−xSb_xTa_0.0375)O₃ piezoelectric ceramics were prepared by the conventional sintering method. The effects of the Sb content on the phase structure, microstructure, dielectric, piezoelectric, and ferroelectric properties of the (K_0.4425Na_0.52Li_0.0375) (Nb_0.9625−xSb_xTa_0.0375)O₃ ceramics were investigated. The much higher Pauling electronegativity of Sb compared with Nb makes the ceramics more covalent. By increasing x from 0.05 to 0.09, all samples exhibit a single perovskite structure with an orthorhombic phase over the whole compositional range, and the bands in the Raman scattering spectra shifted to lower frequency numbers. The grain growth of the ceramics was improved by substituting Sb⁵⁺ for Nb⁵⁺. Significantly, the (K_0.4425Na_0.52Li_0.0375) (Nb_0.8925Sb_0.07Ta_0.0375)O₃ ceramics show the peak values of the piezoelectric coefficient (d₃₃), electromechanical coupling coefficient (k_p), and dielectric constant (?), which are 304 pC/N, 48% and 1909, respectively, owing to the densest microstructure of typical bimodal grain size distributions. Besides, the underlying mechanism for variations of the electrical properties due to Sb⁵⁺ substitution was explained in this work.