Mixed grains and orientation-dependent piezoelectricity of polycrystalline Nd-substituted Bi4Ti3O12 thin films

Polycrystalline Bi_3.15Nd_0.85Ti₃O₁₂ (BNT) thin films were prepared on Pt/Ta/glass substrates by a pulsed laser deposition method. X-ray diffraction measurements revealed that the BNT thin films were preferentially oriented along the (117) direction although they possessed a polycrystalline structure. Good ferroelectric properties of the BNT thin film were observed with a remnant polarization of 13 μC/cm² (2 P_r ~26 μC/cm²). The fatigue resistance test exhibited that the ferroelectric polarization of the BNT thin film degraded significantly after around 10⁹ switching cycles, which can be attributed to its crystal structure. We investigated the surface morphology and ferroelectric domain structure by atomic force microscopy (AFM) and piezoresponse force microscopy (PFM), respectively. Interestingly, mixed grains consisting of long and circular shapes were observed on the BNT film surface, which corresponded to a- and c-axes orientations of crystal growth, respectively. The PFM study revealed that the piezoelectric coefficient (d₃₃) of the long grains was much larger than that of the circular grains.     

Thickness dependent growth and ferroelectric/dielectric properties of phase-pure 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 thin film derived from a modified sol-gel process

Annealing parameter and thickness are two significant factors affecting microstructure and electrical performance of sol-gel derived 0.65Pb(Mg_1/3Nb_2/3)O₃?0.35PbTiO₃ (0.65PMN-0.35PT) thin film. In this paper, various durations are firstly selected for the investigations on annealing parameter of 0.65PMN-0.35PT thin film. Enhanced insulating and ferroelectric properties can be obtained for the film annealed for 1 min due to its phase-pure and homogeneous perovskite structure. Based on this, a series of 0.65PMN-0.35PT thin films with various thicknesses by modifying deposition layer are synthesized annealed for 1 min and the effects of thickness on crystalline, insulating, ferroelectric and dielectric properties are characterized. It reveals that thickness-dependent behavior can be noticed for 0.65PMN-0.35PT thin film with the results that the 8-layered film possesses a relative large remanent polarization (P_r) of 23.34 μC/cm², and reduced leakage current density of 10^?9 A/cm² with low dissipation factor (tanδ) of 0.03 can be achieved for the 14-layered film.     

CuO as a sintering additive for (Bi1/2Na1/2)TiO3-BaTiO3-(K0.5Na0.5)NbO3 lead-free piezoceramics

CuO as a sintering additive was utilized to explore a low-temperature sintering of 0.92(Bi_1/2Na_1/2)TiO₃-0.06BaTiO₃-0.02(K_0.5Na_0.5)NbO₃ lead-free piezoceramic which has shown a promise for actuator applications due to its large strain. The sintering temperature guaranteeing the relative density of greater than 98% is drastically decreased with CuO addition, and saturates at a temperature as low as ∼930 °C when the addition level exceeds ca. 1 mol.%. Two distinguished features induced by the addition of CuO were noted. Firstly, the initially existing two-phase mixture gradually evolves into a rhombohedral single phase with an extremely small non-cubic distortion. Secondly, a liquid phase induced by the addition of CuO causes an abnormal grain growth, which can be attributed to the grain boundary reentrant edge mechanism. Based on these two observations, it is concluded that the added CuO not only forms a liquid phase but also diffuses into the lattice. In the meantime, temperature dependent permittivity measurements both on unpoled and poled samples suggest that the phase stability of the system is greatly influenced by the addition of CuO. Polarization and strain hysteresis measurements relate the changes in the phase stability closely to the stabilization of ferroelectric order, as exemplified by a significant increase in both the remanent strain and polarization values. Electron paramagnetic resonance (EPR) spectroscopic analysis revealed that the stabilization of ferroelectric order originates from a significant amount of Cu²⁺ diffusing into the lattice on B-site. There, it acts as an acceptor and forms a defect dipole in association with a charge balancing oxygen vacancy.     

Dielectric relaxation and resistive switching of Bi0.96Sr0.04Fe0.98Co0.02O3/CoFe2O4 thin films with different thicknesses of the Bi0.96Sr0.04Fe0.98Co0.02O3 layer

Bi_0.96Sr_0.04Fe_0.98Co_0.02O₃/CoFe₂O₄(BSFCO/CFO) bilayered thin films with different thicknesses of the BSFCO layer are synthesized on FTO/glass substrates by chemical solution deposition method (CSD). The influence of BSFCO thickness on the microstructure, dielectric relaxation, ferroelectric properties and resistive switching (RS) of the thin films are researched. Strain exists in the prepared thin films and gives rise to structural distortion, which has an effect on charged defects and ferroelectric polarization. Dielectric relaxation that is closely related to the interfacial polarization at the BSFCO/CFO interface is observed, and the dielectric loss peaks along with decreasing intensity shift to high frequency with decreasing strain. The Maxwell-Wagner two-layer model is adopted to investigate the mechanism of dielectric relaxation, and the relaxation time τ is calculated and it shown to be directly proportional to the strain. It is found that the dielectric properties, including low dielectric loss, can be improved by controlling the BSFCO layer thickness. The ferroelectric properties improve with the decreasing strain, the 12-BSFCO/CFO thin film possesses a large P_r ~ 102.9?μC/cm² at 660?kV/cm. The observed resistive switching (RS) behavior is attributed to the interfacial conduction mechanism, it is found that strain-dependent the ferroelectric polarization switching modulates the width of depletion layer and the height of potential barrier at the interface, resulting in the different resistance states.     

Resistive switching behavior and improved multiferroic properties of Bi0.9Er0.1Fe0.98Co0.02O3/Co1-xMnxFe2O4 bilayered thin films

Bilayered Bi_0.9Er_0.1Fe_0.98Co_0.02O₃/Co_1-xMn_xFe₂O₄ (BEFCO/CM_xFO) thin films were deposited by the sol-gel method. Structural variations between the triclinic-P1 and trigonal-R3c:H (two-phase coexistence) phases in the BEFCO layer were observed owing to the trigonal-R-3m:H phase existing in the CM_xFO layer. The oxygen vacancy concentrations of the BEFCO/CM_xFO bilayered films are reduced by Mn-doping in the bottom CFO layer. The BEFCO/CFO films showed high oxygen vacancy concentrations with a high leakage current. This induced changes of the significant potential barrier at the interface between the BEFCO and CM_xFO layers in the processes of electron capture and release. Thus, the BEFCO/CFO film exhibited obvious resistive switching (RS) effect. The high leakage current also caused a fake polarization phenomenon with a blow up of the P-E loop in the BEFCO/CFO films. However, the real and outstanding ferroelectric properties, which resulted from the fewer oxygen vacancies and the 38% triclinic-P1 structure, were obtained in the BEFCO/CM_0.3FO films (P_r~156.3?μC?cm^?2). In addition, the typical capacitance-voltage curve further confirmed its superior ferroelectric performance. The RS effect almost disappeared in the BEFCO/CM_0.3FO bilayered films. Moreover, the enhanced ferromagnetic properties (M_s~100.36?emu?cm^?3, M_r~55.38?emu?cm^?3) were obtained for the BEFCO/CM_0.1FO films, which was attributed to the magnetic properties of BEFCO (a more triclinic-P1 phase and numerous Fe²⁺ ions), in addition to the CM_xFO layer. The introduction of the doped magnetic layer into the bilayered films thus represented a highly effective method for enhancing the multiferroic properties of BFO.     

Characterization of domain structure and imprint of Pb(Zn1/3Nb2/3)O3-4.5%PbTiO3 (PZN-4.5%PT) single crystals by using PFM and SS-PFM techniques

In this study, the underlying physical mechanisms of imprint are addressed in order to obtain a better understanding of the imprint phenomenon of relaxor Pb(Zn_1/3Nb_2/3)O₃-x%PbTiO₃ (PZN-x%PT) ferroelectric single crystals. The local domain structure and imprint of Pb(Zn_1/3Nb_2/3)O₃-4.5%PbTiO₃ (PZN-4.5%PT) single crystals are investigated by using Piezoresponse Force Microscopy (PFM) and Switching Spectroscopy PFM (SS-PFM) techniques, respectively. The results show that the imprint depends on polarization states. It is also found that surface charge accumulation shows no significant effects on the imprint behaviour of the PZN-4.5%PT single crystals. By studying the annealed samples in the oxygen and argon atmospheres respectively, it is found that the alignment of oxygen vacancy related defect dipoles is one of the origins for the occurrence of imprint. This study provides a better understanding of the imprint phenomenon in ferroelectric materials, which is crucial for the enhancement of the reliability and the advancement of ferroelectric relaxors into the application of ferroelectric devices.     

Dielectric properties of Bi-doped Ba0.8Sr0.2TiO3 ceramic solid solutions

Bismuth-doped barium–strontium–titanate ceramics of the formula (Ba_0.8Sr_0.2)_(1−1.5y)Bi_yTiO₃ were prepared using a conventional solid-state reaction method. The structure, dielectric properties, and ferroelectric relaxor behaviour of all compositions were thoroughly investigated. The findings revealed a broad dielectric anomaly and a shift in dielectric maxima towards higher temperatures with increasing frequency. The diffuseness degree indicator γ was about 1.68, and dielectric relaxation was noted to follow the Vogel–Fulcher relationship, with T_f=185 K, f₀=1.18×10¹⁰ Hz, and Ea=0.35 eV, which further supported the spin-glass-like properties of BBSTs. The latter were also noted to display significant ferroelectric relaxor behaviour that could be attributed to the presence of Bi³⁺ doping ions. The degree of relaxation behaviour was noted to increase with the increase in bismuth concentration. Raman spectra were investigated as a function of temperature, and the findings confirmed the results from X-ray and dielectric measurements. Among the compositions assayed in this solid solution, 10% Bi-doped Ba_0.8Sr_0.2TiO₃ yielded promising relaxor properties that make it a strong candidate for future industrial application in the production of efficient and eco-friendly relaxor ferroelectric materials.     

High energy storage performance of [(Bi0.5Na0.5)0.94Ba0.06]0.97La0.03Ti1-x(Al0.5Nb0.5)xO3 ceramics with enhanced dielectric breakdown strength

Novel lead-free [(Bi_0.5Na_0.5)_0.94Ba_0.06]_0.97La_0.03Ti_1-x(Al_0.5Nb_0.5)_xO₃ ceramics (BNBLT-xAN) were prepared by the conventional solid state sintering method. The dielectric, ferroelectric, ac impedance and energy-storage performance were systematically investigated. Temperature dependent permittivity curves showed that relaxation properties of sintered ceramics gradually diminished with the increase of AN. The introduction of AN gave rise to a slimmer polarization hysteresis loop (P-E) and an enhanced dielectric breakdown strength (DBS). Therefore, the optimum energy-storage performance were realized at x?=?0.05 with the energy-storage density (W_rec) of 1.72?J/cm³ and energy-storage efficiency (η) of 85.6% at 105?kV/cm, accompanied with the excellent temperature stability and fatigue performance. The results demonstrated that BNBLT-xAN system was a promising lead-free candidate for energy-storage applications.     

Regulating crystal structure and ferroelectricity in Sr doped HfO2 thin films fabricated by metallo-organic decomposition

HfO₂ based binary ferroelectric oxides are promising candidate for nonvolatile memory devices due to their compatibility with the current Si-based technology. In this work, Sr doped HfO₂ (Sr:HfO₂) ferroelectric thin films with Sr concentration from 0% to 10?mol% were prepared on the platinum electrodes by metallo-organic decomposition (MOD). It was demonstrated that uniform Sr:HfO₂ thin films with extremely low roughness can be achieved and crystallized by MOD under a 700?°C annealing process. A wake-up stage was believed more essential for the ferroelectricity of the MOD derived Sr:HfO₂ thin film, since the remnant polarization of 13.3 µC/cm² and high dielectric constant of 30 were obtained after 10⁵ cycling tests. The transformation from monoclinic phase to cubic phase was observed with increasing the Sr concentration and the thickness of the films. X-ray photoelectron spectroscopy analysis confirmed the bonding type of O-Hf-O and O-Sr-O bonds in the film. The microscopic crystal structure of ferroelectric orthorhombic phase was observed by high resolution transmission electronic microscope. The intrinsic ferroelectricity of Sr:HfO₂ film was demonstrated by the hysteresis polarization-voltage loops and distinct current peaks in the current-voltage curve. Stable domain structure and its switching dynamics were monitored by piezoresponse force microscopy, indicating the native polarization of Sr:HfO₂. This work will provide a controllable routine to fabricate ferroelectric HfO₂ based thin films using MOD method.     

Effect of (Zn,Mn) co-doping on the structure and ferroelectric properties of BiFeO3 thin films

BiFe_1-2xZn_xMn_xO₃ (BFZMO, with x = 0–0.05) thin films were synthesized via sol–gel method. Effects of (Zn, Mn) co-doping on the structure, ferroelectric, dielectric, and optical properties of BiFeO₃ (BFO) films were investigated. BFZMO thin films exhibit rhombohedral structure. Scanning electron microscopy (SEM) images indicate that co-doping leads to a decrease in grain size and number of defects. Leakage current density (4.60 × 10^?6 A/cm²) of BFZMO film with x = 0.02 was found to be two orders of magnitude lower than that of pristine BFO film. Owing to decreased leakage current density, saturated P–E curves were obtained. Maximum double remnant polarization of 413.2 μC/cm² was observed for BFZMO thin film with x = 0.02, while that for the BFO film was found to be 199.68 μC/cm². The reason for improved ferroelectric properties is partial substitution of Fe ions with Zn and Mn ions, which resulted in a reduction in the effect of oxygen vacancy defects. In addition, co-doping was found to decrease optical bandgap of BFO film, opening several possible routes for novel applications of these (Zn, Mn) co-doped BFO thin films.     

Enhanced ferroelectricity of CaBi2Nb2O9-based high-temperature piezoceramics by pseudo-tetragonal distortion

(LiBi)-doped CaBi₂Nb₂O₉ (CBN) ceramics were synthesized by the conventional solid-state sintering method. The effects of (LiBi) additives on the crystalline structure were explored by Rietveld refinements. The results showed that pseudo-tetragonal distortion was induced by (LiBi) additives when x ≥ 0.35. This structural distortion increased the spontaneous polarization along a-axis and decreased the quits spontaneous polarization along b-axis, which was beneficial to the polarization switching, thus promoting the ferroelectricity and decreasing the coercive field (E_C) of CBN based ceramics. The Ca_0.60(Li_0.5Bi_0.5)_0.40Bi₂Nb₂O₉ (CBNLB-40) ceramics possess the optimum ferroelectric property with 2P_r of 10 μC/cm² and a coercive field (E_C) lower than 100 kV/cm. Moreover, it exhibits a good ferroelectric fatigue-free property within 10⁷ switched cycles. This work may provide a new method to promote the performance of Aurivillius ferroelectric-based non-volatile memory devices.     

Enhanced electrical and photocurrent characteristics of sol-gel derived Ni-doped PbTiO3 thin films

Partial substitution of group 10 metal for titanium is predicted theoretically to be one of the most effective ways to decrease the band gap of PbTiO₃-based ferroelectric photovoltaic materials. It is therefore of interest to experimentally investigate their ferroelectric and photovoltaic properties. In this work, we focus on the electrical and photocurrent properties of Ni-doped PbTiO₃ thin films prepared via a sol-gel route. The nickel incorporation does not modify the crystalline structure of PbTiO₃ thin film, but it can increase the dielectric constant, ferroelectric polarization and photocurrent, and simultaneously decrease the band gap. The maximum remnant polarization (P_r) of 58.1 μC/cm² is observed in PbTi_0.8Ni_0.2O₃ thin film, and its photocurrent density is improved to be approximately one order larger than that of PbTiO₃ thin film and simultaneously exhibits the polarization-dependent switching characteristic, which may be a promising choice for ferroelectric photovoltaic applications.     

Optimized energy storage performances in morphotropic phase boundary (Na0.8K0.2)0.5Bi0.5TiO3-based lead-free ferroelectric thin films

As microelectronic devices move toward integration and miniaturization, the thin film capacitors with high energy density and charge/discharge efficiency have attracted immense interests in modern electrical energy storage systems. Despite morphotropic phase boundary (Na_0.8K_0.2)_0.5Bi_0.5TiO₃-based lead-free materials with outstanding ferroelectric and piezoelectric properties, while large ferroelectric hysteresis with high remanent polarization (P_r) hinder to improve energy storage capability. Here, novel lead-free relaxor-ferroelectric (RFE) thin film capacitors with high energy density are successfully prepared in (1-x) (Na_0.8K_0.2)_0.5Bi_0.5TiO₃-xBa_0.3Sr_0.7TiO₃ [(1-x)NKBT-xBST] systems. Introducing BST into the NKBT systems is expected to reduce remanent polarization (P_r) on account of coupling reestablishment of the polar nano-regions (PNRs) and improving the relaxation behavior. As a result, 0.6NKBT-0.4BST thin film exhibits high energy density (W_rec ～ 54.79 J/cm³) together with satisfactory efficiency (η ～ 76.42%) at 3846 kV/cm. The stable energy storage performances are achieved within the scope of operating temperatures (20–200 °C) and fatigue cycles (1-10⁷ cycles). This work furnishes a new technological way for the design of high energy-density thin film capacitors.     

Electric field dependence of ferroelectric stability in BiFeO3 thin films co-doped with Er and Mn

Bi_0.9Er_0.1Fe_1−xMn_xO₃ (BEFM_xO, x = 0.00–0.03) films are synthesized by a sol–gel technique. The BEFO film exhibits a conduction mechanism based on electron tunneling. The high applied electric field causes dissociation of the defect complex, and the resulting oxygen vacancies contribute to fake polarization. Consequently, the BEFO film has poor polarization stability at high applied electric fields. Coexistence of two phases (with space groups R3c:H and R3m:R) and reduced concentrations of oxygen vacancies and Fe²⁺ in BEFM_xO are achieved by co-doping with Er and Mn. The presence of bulk-based conduction in the BEFM_xO films then leads to ferroelectric domain switching contributing to the real polarization and to excellent ferroelectric stability. In addition, the BEFM_0.02O film shows a typical symmetrical butterfly curve, the highest remnant polarization of ~109 μC/cm², and the highest switching current of ~1.66 mA. It also has the smallest oxygen vacancy concentration and thus the smallest amount of defect complex, which means that there are fewer pinning effects on ferroelectric domains and therefore excellent ferroelectric stability. This excellent ferroelectric stability makes the BEFM_xO films obtain good stability and reliability in the application of ferroelectric memory devices.     

Multiferroic properties of La/Er/Mn/Co multi-doped BiFeO3 thin films

Bi_0.9-xLa_xEr_0.1Fe_0.96Co_0.02Mn_0.02O₃ (BLa_xEFMCO) thin films were prepared by sol-gel method. The grain size, grain boundary resistance, oxygen vacancies and the amount of Fe²⁺ of the films were reduced by multi-ion doping to reduce the built-in electric field of the films. An applied voltage was adopted to regulate the effects of the directional alignment of the oxygen vacancies, defects, and defect pairs on the ferroelectric domains at the grain boundaries to control the ferroelectric polarization of the films. Meanwhile, the capacitance peak also reveals the effects of the ferroelectric domains switching, the migration of oxygen vacancies, and the directional alignment of defect pairs on the ferroelectric properties. In addition, the remnant polarization value of the BLa_0.01EFMCO thin film reaches 152?μC/cm², the squareness of the hysteresis loop (R_sq) is calculated to be 1.03, and the maximum switching current is 1.50?mA. The typical butterfly curves under positive and negative electric fields indicate the films with the enhanced ferroelectric properties. Moreover, the BLa_0.01EFMCO thin film exhibits the enhanced ferromagnetic properties, and its saturation magnetization (M_s) is 2.32 emu/cm³. Therefore, the ferroelectric properties of the BFO film can be enhanced by the multi-ion doped BFO film to reduce the grain boundary resistance (Rgb), the interface Schottky barrier formed by the asymmetric electrode material at the top and bottom of the film, and the built-in electric field formed by the film internal defect or defect pairs.     

Structural and electrical properties of (Bi0.9Dy0.1)(Fe0.975TM0.025)O3±δ (TM=Ni,Cr and Ti) thin films

Pure BiFeO₃ and rare earth and transition metal ions co-doped (Bi_0.9Dy_0.1)(Fe_0.975TM_0.025)O_3±δ (TM=Ni²⁺, Cr³⁺ and Ti⁴⁺) thin films were prepared on Pt(111)/Ti/SiO₂/Si(100) substrates by using a chemical solution deposition method. The changes in the microstructure and the electrical properties with doping elements were investigated. The thin films were well crystallized and randomly oriented, with no detectable impurity and secondary phases. The leakage current densities were reduced and the ferroelectric properties were improved in the co-doped thin films. Among the thin films, the (Bi_0.9Dy_0.1)(Fe_0.975Cr_0.025)O₃ thin film exhibited well saturated hysteresis loops with remnant polarization (2P_r) of 36 μC/cm² and coercive electric field (2E_c) of 954 kV/cm at 1000 kV/cm and low leakage current density of 1.91×10⁻⁵ A/cm² at 100 kV/cm. The enhanced properties observed in the co-doped thin films could be considered as being the result of the suppression of oxygen vacancies and of the modified microstructure.     

Orthorhombic-tetragonal phase transition induced by Ta isovalent doping and its effect on the fatigue characteristics of KNL-NSTx ceramics

The effect of Ta addition on the bipolar fatigue characteristics of lead-free KNL-NST_x ceramics (x = 0, 0.04, 0.07 and 0.11 mol%) is studied. Bipolar cycling up to 1 × 10⁶ cycles leads to strong degradation of the polarization in unmodified KNL-NS ceramics. This can be explained by the development of strong domain wall pinning, leading to the build-up of high local stresses and consequently microcracking of the material. The addition of Ta reduces the domain wall pinning effect and improves the bipolar fatigue resistance. In order to understand the fatigue mechanism, a model based on oxygen vacancy accumulation is proposed. This model is expected to guide future fatigue studies that are concerned with novel lead-free KNN-based materials.     

Self-growth of nanocrystalline structures for amorphous Sr0.925Bi0.05TiO3 thin films with high energy density

Process of self-growth nanocrystalline structure was explored to improve the dielectric properties of amorphous Sr_0.925Bi_0.05TiO₃ (SBT) thin films through controlling the annealing temperature. The crystallinity of the material was 15% when annealed at 550?°C, and the resulting nanocrystalline particles were 14?nm in size as determined by XRD analysis. Therefore, the proposed process could produce a novel film of an amorphous matrix coating nanocrystalline particles. Finite element analysis results showed that the applied electric field was focused primarily in the amorphous matrix, which could effectively decrease the probability of low voltage breakdown of the nanocrystalline particles. Simultaneously, the nanocrystalline particles supplied more polarization charges, which helped to improve the dielectric constant of the inorganic composite. Combining the merits of amorphous and crystalline phases, the ultimate energy storage density of the modified sample was as high as 21.2?J/cm³, which represents an improvement of 5.1?J/cm³ compared with that of pure amorphous SBT thin film.     

Tailoring structural and electrical properties of A-site nonstoichiometric Na0.5Bi0.5(Ti0.97Ni0.03)O3 ferroelectric films deposited on LaNiO3(100)/Si substrate

Highly (l00)-oriented Ni-doped Na_0.5Bi_0.5TiO₃ (NBTNi) thin films with different A-site cation nonstoichiometry were deposited on the LaNiO₃ (100)/Si substrates. We find that low levels of Na/Bi nonstoichiometry in the original composition of NBTNi films have obvious influence on the crystal structure and ferro-/dielectric properties. Na deficiency or Bi excess can lower the leakage current compared to the stoichiometric sample due to the decreased oxide-site vacancies. However, the mechanisms for the two types of films are different. That is, the mobile oxygen vacancies are tied by the Na vacancies in Na deficiency film whereas the formation of oxygen vacancies is suppressed for Bi-rich film. A good combination of ferroelectric property (P_r = 22.7?μC/cm²) and dielectric property (ε_r = 360 and tan?δ?=?0.11) can be achieved in Bi-rich NBTNi (Na_0.5Bi_0.54TNi) film. Besides, the effect of voltage and frequency on the capacitance and dielectric tunability for the Na_0.5Bi_0.54TNi film is investigated solely. These results show that NBT-based thin film is quite flexible in A-site nonstoichiometry, which provides a broad space for performance improvement.     

Fabrication and properties of solution processed all polymer thin‐film ferroelectric device

A ferroelectric device, making use of a flexible plastic, polyethylenterephtalate (PET), as a substrate was fabricated by all solution processes. PET was globally coated by a conducting polymer, poly(3,4‐ethylenedioxythiophene) poly(styrenesulfonate) acid (PEDOT/PSSH), which is used as bottom electrode. The ferroelectric copolymer, poly(vinylidenefluoride–trifluoroethylene) (PVDF–TrFE), thin film was deposited by spin‐coating process from solution. The top electrode, polyaniline, was coated by solution process as well. The ferroelectric properties were measured on this all solution processed all polymer ferroelectric thin‐film devices. A square and symmetric hysteresis loop was observed with high‐polarization level at 15‐V drive voltage on a all polymer device with 700 Å (PVDF–TrFE) film. The relatively inexpensive conducting polyaniline electrode is functional well and therefore is a good candidate as electrode material for ferroelectric polymer thin‐film device. The remnant polarization P_r was 8.5 μC/cm² before the fatigue. The ferroelectric degradation starts after 1 × 10³ times of switching and decreases to 4.9 μC/cm² after 1 × 10⁵ times of switching. The pulse polarization test shows switching take places as fast as a few micro seconds to reach 90% of the saturated polarization. © 2010 Wiley Periodicals, Inc. J Appl Polym Sci, 2011