S波段单片低噪声放大器与混频器

南京电子器件研究所最近利用76mmGaAsMMIC工艺线研制出数种单片电路。封面照片为S波段低噪声放大器与混频器单胞及大圆片照片，初步微波性能如下：放大器：增益＞22dB；噪声系数＜1．5dB；输入输出驻波＜1．5混频器：变频增益＞4dB；各端口驻波＜1．5；各端口隔离度＞24dB电源：±5VS波段单片低噪声放大器与混频器     

多通道神经信号再生集成电路

介绍了一个六通道的神经信号再生集成电路.每一个通道均由检测电路和激励电路组成.检测电路用低噪声、高共模抑制比的仪器放大器从神经元的上端探测神经信号.激励电路中,采用反相运算放大器来进一步放大神经信号,放大的神经信号通过一个缓冲器来激励受损神经的下端神经元,实现了神经信号的传递,从而实现再生的功能.电路采用CSMC0.5 μm CMOS工艺设计,整个六通道的芯片版图面积为1.9 mm×1.6 mm.电路的后仿结果如下:在士2.5 V的供电电压下,单通道电路的功耗为3.9 mW;在100 Hz到7 kHz的频率范围内,等效输入噪声为25.4 nV/sqrt(Hz);增益带宽积达到7.6MHz,可实现60 dB到110 dB的可调增益,输出阻抗为6.2 Ω.     

LMH6881／6882：差分放大器

德州仪器推出可编程差分放大器（PDA）。该2．4GHzLMH6881单通道PDA与2．4GHzLMH6882双通道PDA可在6dB-26dB的增益范围内提供优化的噪声、失真与带宽性能，从而可简化工程师采用差分放大器进行的设计。     

用于5G移动终端N77频段的低噪声放大器设计

设计了一款用于5G移动通信N77频段（3.3～4.2 GHz）的低噪声放大器。该低噪声放大器采用65 nm绝缘体上硅（Silicon on insulator,SOI）工艺实现。电路结构中采用放大通路切换、反馈切换等多种模式相结合的方式实现了6档增益可调,相比于仅使用放大器串联衰减器的方式,可以实现功耗、增益、线性度等性能的最优组合。低噪声放大器工作电压为1.2 V,芯片尺寸为0.84 mm×0.84 mm,增益范围覆盖-11～20 dB,芯片的工作状态采用移动产业处理器接口控制,在最高增益档时噪声系数在0.90～1.05 dB之间,单通道工作时功耗最大为15.6 mW。     

可编程差分放大器(PDA)LMH6881/LMH6882

TI公司的LMH6881单通道PDA与2.4GHz LMH6882双通道PDA可在6～26dB的增益范围内提供优化的噪声、失真与带宽性能,从而可简化工程师采用差分放大器进行的设计。主要特点:最大增益(26dB)与100MHz输入频率下的主要性能规格为噪声系数     

一种3.3 V 2-GHz CMOS低噪声放大器

介绍了一个针对无线通讯应用的2-GHz低噪声放大器(LNA)的设计。该电路采用标准的0.6μm CMOS工艺，电源电压为3．3V，设计中使用了多个片上电感。对低噪声放大器的噪声进行了分析，模拟结果显示，该电路能提供18dB的正向增益(S21)及良好的反向隔离性能(S12为-44dB)，功耗为33．94mW，噪声系数为2．3dB，IIP3为-4．9dBm。     

应用于无线传感器网络低噪声放大器的设计

本文给出一种应用于无线传感器网络射频前端低噪声放大器的设计,采用SMIC0．18μmCMOS工艺模型。在CadenceSpectre仿真环境下的仿真结果表明：该低噪声放大器满足射频前端的系统要求,在2．45GHz的中心频率下增益可调,高增益时,噪声系数为2．9dB,输入P1dB压缩点为-19．8dBm,增益为20．5dB;中增益时,噪声系数为3．6dB,输入P1dB压缩点为-15．8dBm,增益为12．5dB;低增益时,噪声系数为6．0dB,输入P1dB压缩点为-16．4dB,增益为2．2dB。电路的输入输出匹配良好,在电源电压1．8V条件下,工作电流约为6mA。     

Ka波段低噪声放大器的设计

利用pHEMT工艺设计了一个Ka波段微波单片低噪声放大器电路。电路采用四级放大的结构形式。利用微带电路实现射频输入、输出和级间匹配。采用多目标优化方法对电路增益、噪声系数、驻波比、稳定系数和输出1dB压缩点等特性进行了研究。设计出一个增益大于20dB,噪声系数小于1．0dB,1dB压缩点的输出功率在10dBm以上,性能优异的LNA。     

基于ADS应用于GPS的低噪声放大器设计与仿真

设计了一种应用于GPS射频接收机中的单端低噪声放大器（LNA）,并利用安捷伦公司的ADS软件对电路进行了仿真。电路采用TSMC0．13μm工艺库模型,仿真结果表明在1．57GHz工作频率下,可以实现0．9dB的噪声系数和20dB的增益,较好的匹配（输入输出回波损耗S11,S22≤-20dB）,并且在1．2V电源电压下功耗仅为6mW。     

X波段及DBS接收用PHEMT单片低噪声放大器

报道了X波段及DBS接收用单片低噪声放大器的研制结果。利用CAD软件对单片电路进行优化设计，设计工作包括MBE材料、PHEMT器件和单片电路三部分。在研制过程中，开展了关键工艺的专题研究。研究结果为：单级单片放大器在10：5－11．6GHz范围内，NF≤1．82dB，G≥7.72dB；在11．7－12．2GHz范围内，NF≤1．80dB，G≥6．8dB；双级放大器在10．4－11．1GHz范围内，NF≤1．96dB，G≥15．3dB，最低噪声系数为1．63dB，最高增益为16．07dB。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.