Efficient light trapping in silicon solar cells by ultrafast‐laser‐induced self‐assembled micro/nano structures

A novel ultrafast laser processing technique is used to create self‐assembled micro/nano structures on a silicon surface for efficient light trapping. Under appropriate experimental conditions, light reflection (including scattering) of the Si surface has been reduced to less than 3% for the entire solar spectrum and the material appears completely black to the naked eye. A post‐chemical cleaning is applied to remove laser‐redeposited material and induced defects. Optical, morphological, and structural characterizations have been carried out on as‐laser‐treated and post‐chemically cleaned surfaces. Finally, we report for the first time the total efficiency of over 14% and high external quantum efficiency (EQE) results on photovoltaic devices fabricated on the ultrafast‐laser‐induced micro/nano structured silicon wafer, which can be further improved upon process optimization. Copyright © 2011 John Wiley & Sons, Ltd.     

Below‐bandgap absorption in InAs/GaAs self‐assembled quantum dot solar cells

A new approach to derive the below‐bandgap absorption in InAs/GaAs self‐assembled quantum dot (QD) devices using room temperature external quantum efficiency measurement results is presented. The significance of incorporating an extended Urbach tail absorption in analyzing QD devices is demonstrated. This tail is used to evaluate the improvement in the photo‐generated current. The wetting layer and QD absorption contributions are separated from the tail absorption. Several absorption peaks due to QD excited states and potentially different size QDs are observed. An inhomogeneous broadening of 25 meV arising from the variance in the size of QDs is derived. Copyright © 2014 John Wiley & Sons, Ltd.     

Lambertian light trapping in textured solar cells and light‐emitting diodes: analytical solutions

Light trapping by texturing solar cell surfaces has produced significant gains in solar cell performance over recent decades, particularly for cells based on the relatively weakly absorbing semiconductors, such as crystalline silicon and amorphous silicon–hydrogen alloys. Previous solutions for the properties of the resulting textured optical sheets have been based on approximations valid in the weak absorption limit or have been obtained numerically. Analytical solutions are described for ideal Lambertian light trapping and these results used to deduce simple solutions that apply in other than the weak absorption limit. Copyright © 2002 John Wiley & Sons, Ltd.     

Photocurrent enhancement in thin‐film silicon solar cells by combination of anti‐reflective sub‐wavelength structures and light‐trapping textures

Dielectric films with anti‐reflective sub‐wavelength structures are applied to thin‐film silicon solar cells to improve the light incoupling at the front surface. It is verified that modification of the refractive index of the incident medium using dielectric films with sub‐wavelength structures is beneficial to reduce the average reflectivity of Si solar cells with an anti‐reflective coating based on optical interference. It is also shown that the sub‐wavelength structure must be combined with a proper light‐trapping texture to enhance the absorption within thin‐film silicon solar cells. The effectiveness of dielectric films with sub‐wavelength structures is demonstrated by an increase of the short‐circuit current density of a microcrystalline silicon cell from 29.1 to 30.4 mA/cm² in a designated area of 1 cm². The optical interplay between the dielectric films and the light‐trapping textures is also discussed. Copyright © 2015 John Wiley & Sons, Ltd.     

Two new efficient crystalline silicon light‐trapping textures

As a solar cell material, silicon has the disadvantage of an indirect bandgap, requiring both a photon and a phonon to be involved in near‐bandgap absorption processes. This disadvantage can be largely offset by schemes designed to trap incoming light within the body of the cell. Improved light‐trapping schemes have been a significant contributor to the increase in silicon solar cell performance from 21% efficiency to close to 25% over the last decade. Two new light‐trapping schemes are described, both with superior properties to those previously reported. Copyright © 1999 John Wiley & Sons, Ltd.     

Novel field‐effect passivation for nanostructured Si solar cells using interfacial sulfur incorporation

Surface passivation of a nanostructured Si solar cells plays a crucial role in collecting photogenerated carriers by mitigating carrier recombination at surface defect sites. Interface modification by additional sulfur (S) incorporation is proposed to enhance the field‐effect passivation performance. Here, we report that simple annealing in a H₂S ambient induced additional negative fixed charges at the interface between atomic‐layer‐deposited Al₂O₃ and nanostructured Si. Annealing at various temperatures allowed us to control the S concentration and the fixed charge density. The optimized S incorporation at the interface significantly enhanced the negative fixed charge density and the minority carrier lifetime up to ~5.9 × 10¹² cm⁻² and ~780 μs, respectively. As a result, the internal quantum efficiency was nearly two times higher in the blue response region than that of control cells without S incorporation. Copyright © 2017 John Wiley & Sons, Ltd.     

Laser‐fired contact for n‐type crystalline Si solar cells

Laser‐fired contacts to n‐type crystalline silicon were developed by investigating novel metal stacks containing Antimony (Sb). Lasing conditions and the structure of metals stacks were optimized for lowest contact resistance and minimum surface damage. Specific contact resistance for firing different metal stacks through either silicon nitride or p‐type amorphous silicon was determined using two different models and test structures. Specific contact resistance values of 2–7 mΩcm² have been achieved. Recombination loss due to laser damage was consistent with an extracted local surface recombination velocity of ~20 000 cm/s, which is similar to values for laser‐fired base contact for p‐type crystalline silicon. Interdigitated back contact silicon heterojunction cells were fabricated with laser‐fired base contact and proof‐of‐concept efficiencies of 16.9% were achieved. This localized base contact technique will enable low cost back contact patterning and innovative designs for n‐type crystalline solar cell. Copyright © 2014 John Wiley & Sons, Ltd.     

Light‐trapping and back surface structures for polycrystalline silicon solar cells

Light‐trapping in polycrystalline silicon solar cells is usually considered to be more difficult to implement than that in single crystal silicon solar cells due to the random crystallographic orientations in various grains. Furthermore, if minority carrier diffusion length is on the order of or less than solar cell thickness, which is the case of most cost‐effective polycrystalline silicon, the translation of optical gain, achieved from light‐trapping, into electrical gain will be rather limited, even with a perfect back surface passivation. In this work, geometrical light‐trapping structures are demonstrated using a simplified isotropic etching at polycrystalline silicon surfaces. Combined with a back surface reflector (BSR), an enhanced absorption in the long wavelength region is measured with a low parasitic absorption. Different light‐trapping structures are experimentally compared. To further examine the electrical gain from light‐trapping, a three‐terminal solar cell structure is used. This structure allows three different back surface configurations to be realized in a single device: unpassivated, passivated with a floating junction, and enhanced with a collecting junction. Results indicate that even with a relatively short minority‐carrier diffusion length the current collection in the long wavelength region can be significantly improved and the light‐trapping effect is enhanced as well. Copyright © 1999 John Wiley & Sons, Ltd.     

Nanoparticle‐enhanced light trapping in thin‐film silicon solar cells

A systematic investigation of the nanoparticle‐enhanced light trapping in thin‐film silicon solar cells is reported. The nanoparticles are fabricated by annealing a thin Ag film on the cell surface. An optimisation roadmap for the plasmon‐enhanced light‐trapping scheme for self‐assembled Ag metal nanoparticles is presented, including a comparison of rear‐located and front‐located nanoparticles, an optimisation of the precursor Ag film thickness, an investigation on different conditions of the nanoparticle dielectric environment and a combination of nanoparticles with other supplementary back‐surface reflectors. Significant photocurrent enhancements have been achieved because of high scattering and coupling efficiency of the Ag nanoparticles into the silicon device. For the optimum light‐trapping scheme, a short‐circuit current enhancement of 27% due to Ag nanoparticles is achieved, increasing to 44% for a “nanoparticle/magnesium fluoride/diffuse paint” back‐surface reflector structure. This is 6% higher compared with our previously reported plasmonic short‐circuit current enhancement of 38%. Copyright © 2011 John Wiley & Sons, Ltd.     

Light trapping in pyramidally textured crystalline silicon solar cells using back‐side diffractive gratings

Back‐side diffractive gratings enhance a solar cell's efficiency by trapping light inside the cell and increasing the probability of absorption. We introduce a three‐dimensional, polarization‐sensitive optical model combining ray tracing and rigorous coupled‐wave analysis to investigate silicon solar cells with pyramidal front‐side texturing and back‐side gratings. Parameter optimization is performed to increase the short‐circuit current density for a linear binary grating with grating period p and height h. For the investigated 180‐µm‐thick pyramidally textured silicon solar cells, the simulation yields a maximum enhancement of the short‐circuit current density by ΔJ_SC = 1.79 mA/cm² corresponding to an absolute efficiency increase of Δη = 0.90%. Furthermore, we report on fabrication and reflectance measurements of solar cells with gratings and key challenges in achieving efficiency gains using back‐side diffractive gratings. Copyright © 2012 John Wiley & Sons, Ltd.     

Laser‐fired contact optimization in c‐Si solar cells

In this work we study the optimization of laser‐fired contact (LFC) processing parameters, namely laser power and number of pulses, based on the electrical resistance measurement of an aluminum single LFC point. LFC process has been made through four passivation layers that are typically used in c‐Si and mc‐Si solar cell fabrication: thermally grown silicon oxide (SiO₂), deposited phosphorus‐doped amorphous silicon carbide (a‐SiC_x/H(n)), aluminum oxide (Al₂O₃) and silicon nitride (SiN_x/H) films. Values for the LFC resistance normalized by the laser spot area in the range of 0.65–3 mΩ cm² have been obtained. Copyright © 2011 John Wiley & Sons, Ltd.     

Plasmon-enhanced polymer bulk heterojunction solar cells with solution-processable Ag nanoparticles

We report the plasmon-enhanced polymer bulk-heterojunction solar cells with Ag nanoparticles (AgNPs) obtained via chemical method. Here, the AgNPs films with different particle densities are introduced between the poly (3,4-ethylene dioxythiophene) poly (styrenesulfonate) (PEDOT: PSS) buffer layer and the poly (3-hexythiophene):[6,6]-phenyl-c61 butyric acid methyl ester (P3HT: PCBM) layer. By improving the optical absorption of the active layer owing to the localized surface plasmons, the power conversion efficiency of the solar cells is increased compared with the control device. It is shown that the efficiency of the device increases with the density of AgNPs. For the device employing higher density, the resulted power conversion efficiency is found to increase from 2.89% to 3.38%, enhanced by 16.96%.     

Light trapping effect of submicron surface textures in crystalline Si solar cells

Recently, submicron textures have been researched and applied to multicrystalline silicon solar cells in order to improve their optical performance. In this study, the antireflection and light trapping effects of submicron surface textures in crystalline Si (c‐Si) solar cells were quantitatively investigated by numerical simulations based on Maxwell's equations with a simple two‐dimensional (2D) surface grating model. The calculated results showed that the surface reflection loss can be effectively reduced by using submicron Si surface gratings with appropriate aspect ratios. On the other hand, higher order diffractions that are caused by surface gratings that increase optical path lengths and light absorption near the band gap wavelength are dominant only for those with periods greater than 0·5 µm. From these results, it was inferred that submicron textures are effective for light trapping as well as for antireflection in thin c‐Si solar cells if appropriate dimensions are chosen. Copyright © 2007 John Wiley & Sons, Ltd.     

Organic solar cells using plasmonics of Ag nanoprisms

We demonstrate plasmonic effects in bulk heterojunction organic solar cells (OSCs) consisting of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C₆₁-butyric acid methyl ester (PCBM) by incorporating silver (Ag) triangular shaped nanoparticles (nanoprisms; NPSs) into a poly(3,4-ethylenedioxythiophene) buffer layer. The optical absorption and geometric characteristics of the Ag NPSs were investigated in terms of their tunable in-plane dipole local surface plasmon resonance (LSPR) bands. The photovoltaic characteristics showed that the power conversion efficiency (PCE) of the plasmonic OSCs was enhanced by an increase of short circuit current (J_sc) compared to that of the reference cells without any variation in electrical properties. The enhanced J_sc is directly related to the enhancement of optical absorption efficiency by the LSPR of the Ag NPSs. We measured the photovoltaic characteristics of the plasmonic OSCs with various distances between the Ag NPSs and the P3HT:PCBM active layer, in which the PCEs of the plasmonic OSCs decreased with increasing distance. This suggests that the increase of photocurrent and optical absorption was due to near field enhancement (i.e., intensified incident light on the active layer) by the LSPR of the Ag NPSs.     

Full‐wave optoelectrical modeling of optimized flattened light‐scattering substrate for high efficiency thin‐film silicon solar cells

The flattened light‐scattering substrate (FLiSS) is formed by a combination of two materials with a high refractive index mismatch, and it has a flat surface. A specific realization of this concept is a flattened two‐dimensional grating. When applied as a substrate for thin‐film silicon solar cells in the nip configuration, it is capable to reflect light with a high fraction of diffused component. Furthermore, the FLiSS is an ideal substrate for growing high‐quality microcrystalline silicon (µc‐Si:H), used as bottom cell absorber layer in most of multijunction solar cell architectures. FLiSS is a three‐dimensional structure; therefore, a full‐wave analysis of the electromagnetic field is necessary for its optimal implementation. Using finite element method, different shapes, materials, and geometrical parameters were investigated to obtain an optimized FLiSS. The application of the optimized FLiSS in µc‐Si:H single junction nip cell (1‐µm‐thick i‐layer) resulted in a 27.4‐mA/cm² implied photocurrent density. The absorptance of µc‐Si:H absorber exceeded the theoretical Yablonovitch limit for wavelengths larger than 750 nm. Double and triple junction nip solar cells on optimal FLiSS and with thin absorber layers were simulated. Results were in line with state‐of‐the‐art optical performance typical of solar cells with rough interfaces. After the optical optimization, a study of electrical performance was carried out by simulating current–voltage characteristics of nip solar cells on optimized FLiSS. Potential conversion efficiencies of 11.6%, 14.2%, and 16.0% for single, double, and triple junction solar cells with flat interfaces, respectively, were achieved. Copyright © 2012 John Wiley & Sons, Ltd.     

Impact of excess phosphorus doping and Si crystalline defects on Ag crystallite nucleation and growth in silver screen‐printed Si solar cells

Good quality contacts between metal and silicon emitter are crucial for high crystalline solar cell efficiencies. We investigate the impact of defects originating from electrically inactive phosphorus on contact formation within silver thick film metallized silicon solar cells. For this purpose, emitters with varying sheet resistance, depth, and dead layer were metallized with silver pastes from different generations. Macroscopic contact resistivity measurements were compared with the microscopic contact configurations studied by scanning electron microscopy. The density of direct contacts between Ag crystallites grown into Si and the Ag finger bulk is essential for low contact resistivity. The presence of glass‐free regions needed for such direct contacts depends on the paste composition and on the surface texture, and does not vary with the Si emitter properties. Indeed, the decrease in contact resistivity correlates with increasing density of Ag crystallites embedded in the Si surface. Furthermore, the density of Si surface‐embedded Ag crystallites scales proportional to the electrically inactive P and is independent of the sheet resistance. Using the newest silver paste, the Ag crystallite density is independent of the emitter doping, but the Ag crystallite size increases as a function of the thickness of the dead layer. Transmission electron microscopy characterization of the excess P‐doped Si crystal lattice shows that significant strain and Si bond weakening may play a major role for both Ag crystallite nucleation and growth. Finally, we studied Si crystal defects by metallizing nanocracks, dislocations, and grain boundaries and found that Ag crystallite nucleation is defect‐property dependent. Copyright © 2013 John Wiley & Sons, Ltd.     

Design optimization for higher stabilized efficiency and reduced light‐induced degradation in boron‐doped Czochralski silicon solar cells

Traditional boron‐doped Czochralski‐grown Si solar cells are known to suffer from light‐induced degradation (LID). By replacing B with Ga as the dopant in the Cz melt or by reducing the oxygen content by implementing the magnetic‐Cz (MCz) growth technique, not only can LID be eliminated, but also higher efficiency manufacturable screen‐printed cells can be achieved. The use of thinner wafers for cell fabrication can significantly reduce the impact of LID on conventional boron‐doped Cz cells. Knowledge of the degraded cell parameters can be used to determine the optimal thickness for the highest stabilized efficiency. A methodology is developed to maximize the stabilized efficiency after LID by using thinner wafers. A combination of device modeling and experimental data is used to demonstrate that, for traditional B‐doped Cz Si, which degraded from 75 to 20 μs, the optimum cell thickness is in the range of 150–190 μm for a back‐surface recombination velocity of ∼10⁴ cm/s. This cell design reduces the material cost and the absolute efficiency degradation from 0.75% (375 μm device) to 0.24% (157 μm device) and gives the highest stabilized Cz cell efficiency. Copyright © 2002 John Wiley & Sons, Ltd.     

Resistivity and lifetime variation along commercially grown Ga‐ and B‐Doped Czochralski Si ingots and its effect on light‐induced degradation and performance of solar cells

A systematic study of the variation in resistivity and lifetime on cell performance, before and after light‐induced degradation (LID), was performed along ∼900‐mm‐long commercially grown B‐ and Ga‐doped Czochralski (Cz) ingots. Manufacturable screen‐printed solar cells were fabricated and analyzed from different locations on the ingots. Despite the large variation in resistivity (0·57–2·5 Ω cm) and lifetime (100–1000 µ s) in the Ga‐doped Cz ingot, the efficiency variation was found to be ≤ 0·5% with an average efficiency of ∼17·1%. No LID was observed in these cells. In contrast to the Ga‐doped ingot, the B‐doped ingot showed a relatively tight resistivity range (0·87–1·22 Ω cm), resulting in smaller spread in lifetime (60–400 µ s) and efficiency (16·5–16·7%) along the ingot. However, the LID reduced the efficiency of these B‐doped cells by about 1·1% absolute. Additionally, the use of thinner substrate and higher resistivity (4·3 Ω cm) B‐doped Cz was found to reduce the LID significantly, resulting in an efficiency reduction of 0·5–0·6%, as opposed to >1·0% in ∼1 Ω cm ∼17% efficient screen‐printed cells. As a result, Ga‐doped Cz cells gave 1·5 and 0·7% higher stabilized efficiency relative to 1 and 4·3 Ω cm B‐doped Cz Si cells, respectively. Copyright © 2005 John Wiley & Sons, Ltd.     

Enhanced light trapping in solar cells using snow globe coating

A novel method, snow globe coating, is found to show significant enhancement of the short circuit current J_SC (35%) when applied as a scattering back reflector for polycrystalline silicon thin‐film solar cells. The coating is formed from high refractive index titania particles without containing binder and gives close to 100% reflectance for wavelengths above 400 nm. Snow globe coating is a physicochemical coating method executable in pH neutral media. The mild conditions of this process make this method applicable to many different types of solar cells. Copyright © 2012 John Wiley & Sons, Ltd.     

C‐Si solar cell modules

In order to meet the rapidly growing demand for solar power photovoltaic systems which is based on public consciousness of global environmental issues, SHARP has increased the production of solar cells and modules over 10‐fold in the last 5 years. Silicon‐based technologies are expected to be dominant in the coming decade. In the course of an increase of the annual production scale to 1000 MW, the efficiency of modules will be improved and the thickness of wafers will be decreased and all this will lead to a drastic price reduction of PV systems. Copyright © 2005 John Wiley & Sons, Ltd.