Influence of the Addition of Bi2O3 on the Grain Growth and Magnetic Permeability of MnZn Ferrites

Additions of Bi₂O₃ were used to promote grain growth and to increase magnetic permeability during sintering of MnZn ferrites. The results showed that small additions of Bi₂O₃ of <0.05 wt% remarkably increase the permeability of MnZn ferrites. On the other hand, addition of 0.05 wt% Bi₂O₃ induced the formation of a microstructure composed of giant grains with trapped pores embedded in a normal microstructure. The permeability of these samples showed a pronounced secondary maximum in permeability. At still higher Bi₂O₃ concentrations, above 0.2 wt%, the grain growth was retarded and a normal microstructure appeared; however, the magnetic permeability was strongly reduced.     

Microstructure, Piezoelectric, and Ferroelectric Properties of Bi2O3-Added (K0.5Na0.5)NbO3 Lead-Free Ceramics

Lead-free piezoelectric (K_0.5Na_0.5)NbO₃– x wt% Bi₂O₃ ceramics have been synthesized by an ordinary sintering technique. The addition of Bi₂O₃ increases the melting point of the system and improves the sintering temperature of (K_0.5Na_0.5)NbO₃ ceramics. All samples show a pure perovskite phase with a typical orthorhombic symmetry when the Bi₂O₃ content <0.7 wt%. The phase transition temperature of orthorhombic–tetragonal ( T _{O − T} ) and tetragonal–cubic ( T _C) slightly decreased when a small amount of Bi₂O₃ was added. The remnant polarization P _r increased and the coercive field E _c decreased with increasing addition of Bi₂O₃. The piezoelectric properties of (K_0.5Na_0.5)NbO₃ ceramics increased when a small amount of Bi₂O₃ was added. The optimum piezoelectric properties are d ₃₃=140 pC/N, k _p=0.46, Q _m=167, and T _C=410°C for (K_0.5Na_0.5)NbO₃–0.5 wt% Bi₂O₃ ceramics.     

Effect of Bi2O3 Addition on the Sintering Temperature and Microwave Dielectric Properties of Zn2SiO4 Ceramics

Bi₂O₃ was added to a nominal composition of Zn_1.8SiO_3.8 (ZS) ceramics to decrease their sintering temperature. When the Bi₂O₃ content was <8.0 mol%, a porous microstructure with Bi₄(SiO₄)₃ and SiO₂ second phases was developed in the specimen sintered at 885°C. However, when the Bi₂O₃ content exceeded 8.0 mol%, a liquid phase, which formed during sintering at temperatures below 900°C, assisted the densification of the ZS ceramics. Good microwave dielectric properties of Q × f =12,600 GHz, ɛ_r=7.6, and τ_f=−22 ppm/°C were obtained from the specimen with 8.0 mol% Bi₂O₃ sintered at 885°C for 2 h.     

Grain Growth of ZnO during Bi2O3 Liquid-Phase Sintering

Grain growth of ZnO during the liquid-phase sintering of binary ZnO–Bi₂O₃ ceramics has been studied for Bi₂O₃ contents from 3 to 12 wt% and sintering from 900° to 1400°C. The results are considered in combination with previously published studies of ZnO grain growth in the ZnO–Bi₂O₃ system. For the Bi₂O₃ contents of the present study, the rate of ZnO grain growth is found to decrease with increasing Bi₂O₃. Activation analysis, when combined with the results of similar analyses of the previous studies, reveals a change in the rate-controlling mechanism for ZnO grain growth. Following a low-Bi₂O₃-content region of nearly constant activation energy values of about 150 kJ/mol, further Bi₂O₃ additions cause an increase of the activation energy to about 270 kJ/mol. consistent with accepted models of liquid-phase sintering, it is concluded that the rate-controlling mechanism of ZnO grain growth during liquid-phase sintering in the presence of Bi₂O₃ changes from one of a phase-boundary reaction at low Bi₂O₃ levels to one of diffusion through the liquid phase at about the 5 to 6 wt% Bi₂O₃ level and above.     

Sintering of Lithium Zinc Ferrites with Alkoxide-Derived Borosilicate Liquid Phase

Lithium zinc ferrites (Li_0.3Zn_0.4Mn_0.05Fe_2.25O₄) of > 97% theoretical density were prepared with alkoxide-derived borosilicate sintering additive. A sol-gel technique was used to incorporate the borosilicate phase prior to sintering. The effects of borosilicate composition and additive quantity on microstructural development and densification are reported. Direct current resistivity, dynamic hysteresis, and microwave property data are discussed in terms of processing parameters and resultant microstructures. The microstructure of the sintered ferrites was analyzed using SEM and TEM. Heterogeneities including regions of liquid-phase coalescence and intragranularly included glass phase were observed in some cases. These microstructural features were shown to have deleterious effects on microwave magnetic properties when compared to those of commercial ferrites of the same nominal composition sintered with Bi₂O₃ additive.     

Pore–Boundary Separation Behavior during Sintering of Pure and Bi2O3-Doped ZnO Ceramics

Pore–boundary separation in ZnO and 99.95ZnO·0.05Bi₂O₃ (in mol%) specimens during sintering at 1200°C was investigated. In pure ZnO specimens, pores were attached to the grain boundaries and disappeared during the final stage of sintering. In the Bi₂O₃-doped specimens, on the other hand, many pores were separated from the boundaries and trapped inside the grains. Observation using transmission electron microscopy showed that a thin layer of Bi₂O₃-rich phase existed at the boundaries in the Bi₂O₃-doped specimens. The pore separation in 99.95ZnO·0.05Bi₂O₃ specimens was explained in terms of the dihedral angle change and the high mobility of a liquid film boundary.     

Low-Temperature Sintering, Densification, and Properties of Z-type Hexaferrite with Bi2O3 Additives

The effect of the addition of Bi₂O₃ on the densification, low-temperature sintering, and electromagnetic properties of Z-type planar hexaferrite was investigated. The results show that Bi₂O₃ additives can improve the densification and promote low-temperature sintering of Z-type hexaferrite prepared by a solid-state reaction method. The presence of Bi₂O₃ in the grain boundaries and the generation of Fe²⁺ degrade the initial permeability of the samples but make the quality factor and cut-off frequency increase. Various possible mechanisms involved in generating these effects were also discussed.     

Grain Growth in Sintered ZnO and ZnO-Bi2O3 Ceramics

Grain growth in a high-purity ZnO and for the same ZnO with Bi₂O₃ additions from 0.5 to 4 wt% was studied for sintering from 900° to 1400°C in air. The results are discussed and compared with previous studies in terms of the phenomenological kinetic grain growth expression: G ⁿ— G ⁿ₀= K ₀ t exp(— Q/RT ). For the pure ZnO, the grain growth exponent or n value was observed to be 3 while the apparent activation energy was 224 ± 16 kJ/mol. These parameters substantiate the Gupta and Coble conclusion of a Zn²⁺ lattice diffusion mechanism. Additions of Bi₂O₃ to promote liquidphase sintering increased the ZnO grain size and the grain growth exponent to about 5, but reduced the apparent activation energy to about 150 kJ/mol, independent of Bi₂O₃ content. The preexponential term K ₀ was also independent of Bi₂O₃ content. It is concluded that the grain growth of ZnO in liquid-phase-sintered ZnO-Bi₂O₃ ceramics is controlled by the phase boundary reaction of the solid ZnO grains and the Bi₂O₃-rich liquid phase.     

Temperature/Composition Phase Diagram of the System Bi2O3-PbO

The Bi₂O₃-PbO phase diagram was determined using differential thermal analysis and both room- and high-temperature X-ray powder diffraction. The phase diagram contains a single eutectic at 73 mol% PbO and 635°C. A body-centered cubic solid solution exists above ∼600°C within a composition range of 30 to 65 mol% PbO. The compounds α-Bi₂O₃, σ5-Bi₂O₃, and γ-PbO (litharge) have wide solubility ranges. Four compounds, 6Bi₂O₃·PbO, 3Bi₂O₃·2PbO, 4Bi₂O₃,5PbO, and Bi₂O₃·3PbO, are formed in this system and the previously unreported X-ray diffraction patterns of the latter three compounds are reported. Diffraction patterns for some of these mixed oxides have been observed in ZnO-based varistors grown using Bi₂O₃ and PbO as sintering aids.     

Nanopowder Preparation and Dielectric Properties of a Bi2O3–Nb2O5 Binary System Prepared by the High-Energy Ball-Milling Method

The high-energy ball-milling (HEM) method was used to synthesize the compositions of BiNbO₄, Bi₅Nb₃O₁₅, and Bi₃NbO₇ in a Bi₂O₃–Nb₂O₅ binary system. Reagent Bi₂O₃ and Nb₂O₅ were chosen as the starting materials. The X-ray diffraction patterns of the three compositions milled for different times were studied. Only the cubic Bi₃NbO₇ phase, Nb₂O₅, and amorphous matters were observed in powders after being milled for 10 h. After heating at proper temperatures the amorphous matters disappeared and the proleptic phases of BiNbO₄ and Bi₅Nb₃O₁₅ could be obtained. The Scherrer formula was used to calculate the crystal size and the results of nanopowders are between 10 and 20 nm. The scanning electron microscopy photos of Bi₃NbO₇ powders showed drastic aggregation, and the particle size was about 100 nm. The dielectric properties of ceramics sintered from the nanopowders prepared by HEM at 100–1 MHz and the microwave region were measured. Bi₃NbO₇ ceramics showed a good microwave permittivity ɛ_r of about 80 and a Q × f of about 300 at 5 GHz. The triclinic phase of BiNbO₄ ceramics reached its best properties with ɛ_r=24 and Q × f =14 000 GHz at about 8 GHz.     

The Bi2O3–Nb2O5–NiO Phase Diagram

The Bi₂O₃–Nb₂O₅–NiO phase diagram at 1100°C was determined by means of solid-state synthesis, X-ray diffraction, and scanning electron microscopy. A ternary eutectic with a melting point below 1100°C was found to exist in the field between NiO, Bi₂O₃, and the end-member of the δBi₂O₃–Nb₂O₅ solid solution. The existence of the previously reported Bi₃Ni₂NbO₉ phase was disproved. A pyrochlore homogeneity range around Bi_1.5Ni_0.67Nb_1.33O_6.25 was determined together with all the phase relations in this phase diagram.     

Phase Formation and Dielectric Characterization of the Bi2O3–TeO2 System Prepared in an Oxygen Atmosphere

Solid-state synthesis of compositions from the Bi₂O₃–TeO₂ system show that, under an oxygen atmosphere, Te⁴⁺ oxidizes to Te⁶⁺ and yields four room-temperature stable compounds: Bi₂Te₂O₈, Bi₂TeO₆, Bi₆Te₂O₁₅, and new a compound with the nominal composition 7Bi₂O₃·2TeO₂. Dense ceramics can be prepared from all these compounds by sintering between 650° and 800°C under an oxygen atmosphere. The permittivity of these compounds varies from ∼30 to ∼54, the Q × f value from 1.100 to 41.000 GHz (∼5 GHz), and the temperature coefficient of resonant frequency from −43 to −144 ppm/K. Bi₆Te₂O₁₅ and 7Bi₂O₃·2TeO₂ do not react with silver, and, therefore, they have the potential to be used for applications in low-temperature cofired ceramic (LTCC) technology.     

Nature of Intergranular Phase in Nonohmic ZnO Ceramics Containing 0.5 Mol% Bi2O3

The intergranular phase obtained by sintering a binary mixture of ZnO + 0.5 mol% Bi₂O₃ was isolated by using a dilute solution of HCIO₄, which etches ZnO preferentially. The combined results of selected-area electron diffraction and microscopy, microprobe analysis, and X-ray diffraction strongly indicate that the intergranular material is a polycrystalline phase of tetragonal β-Bi₂O₃ ( P 42₁ c ), rather than the amorphous ZnO-Bi₂O₃ phase reported earlier. It appears that the nonohmic behavior in this prototype metal-oxide varistor must be an interfacial property associated with the semiconducting ZnO grains separated by thin layers of high-resistivity Bi₂O₃.     

Microwave Dielectric Properties and Chemical Resistance of Low-Temperature-Sintered CaZrB2O6 Ceramics

Dolomite-type borate ceramics consisting of CaZrB₂O₆ were synthesized via a conventional solid-state reaction route; low-temperature sintering was explored using Bi₂O₃–CuO additives of 1–7 wt% for low-temperature co-fired ceramics applications. For several sintering temperatures, the microwave dielectric properties and chemical resistance of the ceramics were investigated. The CaZrB₂O₆ ceramics with 3 wt% Bi₂O₃–CuO addition could be sintered below 925°C, and the microwave dielectric properties of the low-temperature samples were ɛ_r=10.55, Q × f =87,350 GHz, and τ_f=+2 ppm/°C. The chemical resistance test result showed that both CaZrB₂O₆- and Bi₂O₃–CuO-added CaZrB₂O₆ ceramics were durable in basic solution but were degraded in acid solution.     

Subsolidus Phase Equilibria in the System Bi2O3-TiO2-Nb2O5

The subsolidus phase equilibria in the system Bi₂O₃-TiO₂-Nb₂O₅ at 1100°C were determined by solid-state reaction techniques and X-ray powder diffraction methods. The system was found to contain 4 ternary compounds, i.e. Bi₃TiNbO₉, Bi₇Ti₄NbO₂₁, a cubic pyrochlore solid solution having a compositional range of 3Bi₂O₃· x TiO₂ (7– x )Nb₂O₅ where x ranges from 2.3 to 6.75, and an unidentified phase, 4Bi₂O₃·11TiO₂·5Nb₂O₅.     

The System Bi2O3-SiO2

The Bi₂O₃-rich side of the system Bi₂O₃-SiO₂ was studied with powder X-ray diffraction and differential thermal analysis. In the composition 6Bi₂O₃. x SiO₂, the metastable γ phase (bcc) was observed to exist over the range of 0 < x ≤ 1. In most of the compositions studied, metastable phases of water-quenched melts transformed into another metastable phase before reaching stable phases. A modification of the phase diagram is proposed.     

Ferroelectric Thin Films of Bismuth-Containing Layered Perovskites: Part II, PbBi2Nb2O9

Ferroelectric thin films of bismuth-containing layered perovskite PbBi₂Nb₂O₉ have been prepared by a metalorganic decomposition (MOD) method. Random and highly c-oriented films of the same starting composition have been obtained under different intermediate- and high-temperature heat treatments. A comparison of their crystallization and properties with those of Bi₄Ti₃O₁₂ films reveals similar trends that are common to bismuth-containing Aurivillius compounds. Heterogeneous nucleation of the perovskite phase either on the pyrochlore (444) plane because of lattice matching or on the substrate surface because of lower interfacial energy is proposed as the cause of orientation selection during crystallization. The different thickness of the pseudoperovskite subunits in these layered compounds may be responsible for the systematic difference in the anisotropic ferroelectric properties. Smaller polarization and higher coercive field are expected for PbBi₂Nb₂O₉, which has thinner pseudoperovskite units than Bi₄Ti₃O₁₂.     

Cubic-to-Tetragonal Displacive Transformation in Gd2O3–Bi2O3 Ceramics

Gd₂O₃-doped Bi₂O₃ polycrystalline ceramics containing between 2 and 7 mol% Gd₂O₃ were fabricated by pressureless sintering powder compacts. The as-sintered samples were tetragonal at room temperature. Hightemperature X-ray diffraction (XRD) traces showed that the samples were cubic at elevated temperatures and transformed into the tetragonal polymorph during cooling. On the basis of conductivity measurements as a function of temperature and differential scanning calorimetry (DSC), the cubic → tetragonal as well as tetragonal → cubic → teansition temperatures were determined as a function of Gd₂O₃ concentration. The cubic → tetragonal transformation appears to be a displacive transformation. It was observed that additions of ZrO₂ as a dopant, which is known to suppress cation interdiffusion in rare-earth oxide–Bi₂O₃ systems, did not suppress the transition, consistent with it being a displacive transition. Annealing of samples at temperatures 660°C for several hundred hours led to decomposition into a mixture of monoclinic and rhombohedral phases. This shows that the tetragonal polymorph is a metastable phase.     

Phase Relations in the System Bi2O3-WO3

Phase relations in the system Bi₂O₃-WO₃ were studied from 500° to 1100°C. Four intermediate phases, 7Bi₂O₃· WO₃, 7Bi₂O₃· 2WO₃, Bi₂O₃· WO₃, and Bi₂O₃· 2WO₃, were found. The 7B₂O · WO₃ phase is tetragonal with a ₀= 5.52 Å and c ₀= 17.39 Å and transforms to the fcc structure at 784°C; 7Bi₂O₃· 2WO₃ has the fcc structure and forms an extensive range of solid solutions in the system. Both Bi₂O₃· WO₃ and Bi₂O₃· 2WO₃ are orthorhombic with (in Å) a ₀= 5.45, b ₀=5.46, c ₀= 16.42 and a ₀= 5.42, b ₀= 5.41, c ₀= 23.7, respectively. Two eutectic points and one peritectic exist in the system at, respectively, 905°± 3°C and 64 mol% WO₃, 907°± 3°C and 70 mol% WO₃, and 965°± 5°C and 10 mol% WO₃.     

Dielectric and Ferroelectric Properties of Nanocrystalline Bi2Ti2O7 Prepared by a Metallorganic Decomposition Method

Nanopowders of Bi₂Ti₂O₇ were synthesized by a metallorganic decomposition (MOD) technique. Pure Bi₂Ti₂O₇ nanocrystals formed after annealing at 550°C for 5 min. X-ray patterns show that Bi₂₀TiO₃₂ is a metastable phase during Bi₂Ti₂O₇ formation. It was found that there were two peaks in the curves of the dielectric response as a function of temperature for pressed nanocrystalline Bi₂Ti₂O₇ samples. The Curie temperature decreases with decrease of grain size whereas the ferroelectric-ferroelectric phase transition temperature increases. The hysteresis loops observed also suggest that Bi₂Ti₂O₇ might belong to a ferroelectric material.