Transformational Plasticity in Bi2O3

Transformational plasticity associated with the monoclinic-to-cubic phase transition at 730°C in Bi₂O₃ was observed and characterized. This phenomenon is explained in terms of Greenwood and Johnson's model of internal stress-induced deformation, proceeding, in this instance, by a time-dependent, grain-size-sensitive creep mechanism, probably grain-boundary sliding. Criteria are proposed for choosing other prospective transformationally plastic ceramics; they are met by Bi₂WO₆, which also exhibits extensive transformation plasticity.     

Kinetics of Solid-State Reaction of Bi2O3 and Fe2O3

Solid-state reactions of equimolar mixtures of Bi₂O₃ and Fe₂O₃ from 625° to 830°C and their kinetics were investigated. The reaction rates were determined from the integrated X-ray diffraction intensities of the strongest peaks of the reactants and products. The activation energy for the formation of BiFeO₃ was 96.6±9.0 kcal/mol; that for a second-phase compound, Bi₂Fe₄O₉, which formed above 675°C, was 99.4±9.0 kcal/mol. Specific rate constants for these simultaneous reactions were obtained. The preparation of single-phase BiFeO₃ from the stoichiometric mixture of Bi₂O₃ and Fe₂O₃ is discussed.     

Electrical Resistivity Surface for FeO-Fe2O3-P2O5 Glasses

The dc electrical properties and microstructure of x (FeO-Fe₂O₃)-(100 – x )P₂O₅ glasses were investigated up to a maximum of x = 75 mol%. Results indicate that, in general, the minimum resistivity of the glass does not occur at equal Fe^2+] and Fe^3+] concentrations, although for the special case where x = 55 mol% the minimum does occur at Fe^2+]/Fe total = 0.5, as reported by other investigators. Evidence presented shows that the position of the minimum resistivity is a function of total iron content. The minimum shifts to glasses richer in Fe^2+] at higher total iron concentrations.     

Effects of Excess Bi2O3 on the Ferroelectric Behavior of Nd-Doped Bi4Ti3O12 Thin Films

Effects of excess Bi₂O₃ content on formation of (Bi_3.15Nd_0.85)Ti₃O₁₂ (BNT) films deposited by RF sputtering were investigated. The microstructures and electrical properties of BNT thin films are strongly dependent on the excess Bi₂O₃ content and post-sputtering annealing temperature, as examined by XRD, SEM, and P – E hysteresis loops. A small amount of excess bismuth improves the crystallinity and therefore polarization of BNT films, while too much excess bismuth leads to a reduction in polarization and an increase in coercive field. P – E loops of well-established squareness were observed for the BNT films derived from a moderate amount of Bi₂O₃ excess (5 mol%), where a remanent polarization 2P _r of 25.2 μC/cm² and 2E _c of 161.5 kV/cm were shown. A similar change in dielectric constant with increasing excess Bi₂O₃ content was also observed, with the highest dielectric constant of 304.1 being measured for the BNT film derived from 5 mol% excess Bi₂O₃.     

The System Bi2O3-SiO2

The Bi₂O₃-rich side of the system Bi₂O₃-SiO₂ was studied with powder X-ray diffraction and differential thermal analysis. In the composition 6Bi₂O₃. x SiO₂, the metastable γ phase (bcc) was observed to exist over the range of 0 < x ≤ 1. In most of the compositions studied, metastable phases of water-quenched melts transformed into another metastable phase before reaching stable phases. A modification of the phase diagram is proposed.     

Effect of Al2O3 and Bi2O3 on the Formation Mechanism of Sn-Doped Ba2Ti9O20

High-performance Ba₂Ti₉O₂₀ ceramics are attracting great attention, but their formation mechanism still is somewhat unclear. The present investigation shows that the formation of Ba₂Ti₉O₂₀ can be promoted strikingly by the participation of Bi₂O₃ and Al₂O₃. The effect of Bi₂O₃ on the formation of Ba₂Ti₉O₂₀ is attributed to the fact that migration of the involved reactants is accelerated by liquid which forms from the melting of Bi₂O₃ above 830°C. This migration, however, is not the only rate-limiting factor. A high potential-energy barrier, resulting from stress that arises along the crystal-structured layers, also heavily restricts the formation of Ba₂Ti₉O₂₀. The participation of Al₂O₃, on the other hand, can reduce the height of this potential-energy barrier and effectively improve the kinetics of the formation of Ba₂Ti₉O₂₀ by causing the formation of BaAI₂Ti₆O₁₆ crystals; these crystals intergrow with Ba₂Ti₉O₂₀ crystals and result in decreased stress.     

Liquid-Phase Sintering of MgO–Bi2O3

Liquid-phase sintering of MgO-5 wt% Bi₂O₃ was studied by loading dilatometry. The ratio of the creep viscosity to the densification viscosity (∼1.8) and the sintering stress remained nearly constant in a wide density interval. These results, together with results on several other systems, indicate that the constancy of the sintering stress during densification may be a general phenomenon, regardless of densification mechanism.     

Comment on "Effect of Al2O3 and Bi2O3 on the Formation Mechanism of Sn-Doped Ba2Ti9O20"

in a recent article of the Journal , Yu et al .¹ reported their experimental results on the effect of Al₂O₃ and Bi₂O₃ on the formation mechanism of Sn-doped Ba₂Ti₉O₂₀. They claimed that both Al₂O₃ and Bi₂O₃ can dramatically assist the formation of Sn-doped Ba₂Ti₉O₂₀ but are based on different mechanisms. They concluded that first, Bi₂O₃ melts above 830°C and accelerates the migration of the involved reactants to form Ba₂Ti₉O₂₀; second, Al₂O₃ can reduce the height of the potential energy barrier of the formation of Ba₂Ti₉O₂₀ due to the intergrowth of BaAl₂Ti₆O₁₆ phase. They explained their results from a point of view that the formation of Ba₂Ti₉O₂₀ is controlled by (1) the migration of reactants to the interfaces and (2) the height of the potential-energy barrier of the reaction at the interfaces. However, based on their results, we feel their conclusions are incautious and may be misleading, as will be discussed later.     

Influence of the Addition of Bi2O3 on the Grain Growth and Magnetic Permeability of MnZn Ferrites

Additions of Bi₂O₃ were used to promote grain growth and to increase magnetic permeability during sintering of MnZn ferrites. The results showed that small additions of Bi₂O₃ of <0.05 wt% remarkably increase the permeability of MnZn ferrites. On the other hand, addition of 0.05 wt% Bi₂O₃ induced the formation of a microstructure composed of giant grains with trapped pores embedded in a normal microstructure. The permeability of these samples showed a pronounced secondary maximum in permeability. At still higher Bi₂O₃ concentrations, above 0.2 wt%, the grain growth was retarded and a normal microstructure appeared; however, the magnetic permeability was strongly reduced.     

Transformational Superplasticity in the Bi2O3-Sm2O3 Eutectoid System

Transformational superplasticity associated with the eutectoid reaction in the Bi₂O₃-Sm₂O₃ system was observed and characterized in hypoeutectoid and hypereutectoid compositions. Transformational strain varied linearly with applied stress and exhibited a stress-axis intercept, or threshold stress, that is related to the proeutectoid microconstituent. Results are explained quantitatively using the analysis by Greenwood and Johnson and a creep mechanism.     

Bi2O3 Vaporization in Microwave-Sintered ZnO Varistors

Vaporization of Bi₂O₃ in microwave-sintered ZnO varistors is discussed in this study. The Bi₂O₃ vaporization of ZnO varistors sintered by a conventional electric furnace is also studied for comparison. The results show that the Bi₂O₃ vaporization in microwave-sintered ZnO varistors is more homogenous from the surface to the inside of the sample, which results from the special thermal gradient inside the microwave-sintered samples, and we also find out that the Bi₂O₃ vaporization directly affects the electrical properties of ZnO varistors. Microwave-sintered samples exhibit more excellent electrical properties than the conventional ones because the homogenous Bi₂O₃ vaporization leads to more uniform microstructures.     

Effect of Sb2O3 on Thermal Properties of Glasses in Bi2O3–B2O3–SiO2 System

Glasses with compositions 50Bi₂O₃– x Sb₂O₃–10B₂O₃–(40– x ) SiO₂ ( x =0, 1, 3, 5, 8, 10) have been prepared by conventional melt quench technique. Substitution of Sb₂O₃ for SiO₂ exerted an obvious effect on properties of glasses, especially, increased glass transition temperature ( T _g) and crystalline temperature ( T _c) greatly. Results of infrared transmission spectra attributed the effect to the formation of new bridging bonds of Sb–O–B and Sb–O–Si in glass network.     

Cubic-to-Tetragonal Displacive Transformation in Gd2O3–Bi2O3 Ceramics

Gd₂O₃-doped Bi₂O₃ polycrystalline ceramics containing between 2 and 7 mol% Gd₂O₃ were fabricated by pressureless sintering powder compacts. The as-sintered samples were tetragonal at room temperature. Hightemperature X-ray diffraction (XRD) traces showed that the samples were cubic at elevated temperatures and transformed into the tetragonal polymorph during cooling. On the basis of conductivity measurements as a function of temperature and differential scanning calorimetry (DSC), the cubic → tetragonal as well as tetragonal → cubic → teansition temperatures were determined as a function of Gd₂O₃ concentration. The cubic → tetragonal transformation appears to be a displacive transformation. It was observed that additions of ZrO₂ as a dopant, which is known to suppress cation interdiffusion in rare-earth oxide–Bi₂O₃ systems, did not suppress the transition, consistent with it being a displacive transition. Annealing of samples at temperatures 660°C for several hundred hours led to decomposition into a mixture of monoclinic and rhombohedral phases. This shows that the tetragonal polymorph is a metastable phase.     

Phase Relations in the System Bi2O3-WO3

Phase relations in the system Bi₂O₃-WO₃ were studied from 500° to 1100°C. Four intermediate phases, 7Bi₂O₃· WO₃, 7Bi₂O₃· 2WO₃, Bi₂O₃· WO₃, and Bi₂O₃· 2WO₃, were found. The 7B₂O · WO₃ phase is tetragonal with a ₀= 5.52 Å and c ₀= 17.39 Å and transforms to the fcc structure at 784°C; 7Bi₂O₃· 2WO₃ has the fcc structure and forms an extensive range of solid solutions in the system. Both Bi₂O₃· WO₃ and Bi₂O₃· 2WO₃ are orthorhombic with (in Å) a ₀= 5.45, b ₀=5.46, c ₀= 16.42 and a ₀= 5.42, b ₀= 5.41, c ₀= 23.7, respectively. Two eutectic points and one peritectic exist in the system at, respectively, 905°± 3°C and 64 mol% WO₃, 907°± 3°C and 70 mol% WO₃, and 965°± 5°C and 10 mol% WO₃.     

Dielectric Properties of the Fluorite-like Bi2O3–Nb2O5 Solid Solution and the Tetragonal Bi3NbO7

Our analysis of the microwave dielectric properties of the δ-Bi₂O₃–Nb₂O₅ solid solution (δ-BN_ss) showed a continuous increase in permittivity and dielectric losses with an increasing concentration of Nb₂O₅. The only discontinuity was found for the temperature coefficient of resonant frequency, which is negative throughout the entire homogeneity range but reaches a minimum value for the sample with 20 mol% Nb₂O₅. At the same composition there is a discontinuity in the grain size of the δ-BN_ss ceramics. For the sample containing 25 mol% Nb₂O₅ two structural modifications were observed. A single-phase tetragonal Bi₃NbO₇, in the literature referred to as a Type-III phase, is formed in a very narrow temperature range from 850° to 880°C. A synthesis performed below or above this temperature range resulted in the formation of the end member of the δ-BN_ss homogeneity range. Compared with the δ-BN_ss the Bi₃NbO₇ ceramics exhibit lower microwave dielectric losses, an increased conductivity, and a positive temperature coefficient of resonant frequency.     

Crystalline Phases and YAG Laser-Induced Crystallization in Sm2O3–Bi2O3–B2O3 Glasses

The glass formation region, crystalline phases, second harmonic (SH) generation, and Nd:yttrium aluminum garnet (YAG) laser-induced crystallization in the Sm₂O₃–Bi₂O₃–B₂O₃ system were clarified. The crystalline phases of Bi₄B₂O₉, Bi₃B₅O₁₂, BiBO₃, Sm _x Bi_{1− x} BO₃, and SmB₃O₆ were formed through the usual crystallization in an electric furnace. The crystallized glasses consisting of BiBO₃ and Sm _x Bi_{1− x} BO₃ showed SH generations. The formation of the nonlinear optical BiB₃O₆ phase was not confirmed. The formation (writing) region of crystal lines consisting of Sm _x Bi_{1− x} BO₃ by YAG laser irradiation was determined, in which Sm₂O₃ contents were∼10 mol%. The present study demonstrates that Sm₂O₃–Bi₂O₃–B₂O₃ glasses are promising materials for optical functional applications.     

Preparation and Characterization of High-Density PbO–Bi2O3–B2O3 Glasses

Transparent glasses with densities greater than 8 g/mL, which are resistant to nuclear radiation damage and can serve as a host for rare-earth scintillators, are being developed. Glasses in the PbO–Bi₂O₃ system are known to have some of the highest densities yet reported. In this study, a thorough reexamination of these glasses has been performed to examine their optical-transmission windows and densities. The observed glass-forming range found in this work agrees well with that reported in the literature. A minimum of ≅ 10 mol% B₂O₃ was required in some cases to vitrify the compositions. Glasses were examined in which the PbO:Bi₂O₃ ratios ranged from 10:90 to 90:10 with a maximum total B₂O₃ content of ≅50 mol%. Glasses with higher B₂O₃ contents were not examined because of the rapidly decreasing density with increasing B₂O₃ content. The densities of the glasses ranged from a low of 6.0 g/mL to a high of 8.1 g/mL. The highest densities were observed for glasses with the greatest PbO content. Ultraviolet/visible and infrared spectra were recorded for these glasses. The transmission window lies between ≅430 and 3850 nm. A systematic increase in the cutoff wavelength was found to occur with an increase in the density. Water-absorption peaks were found in the infrared spectra at ≅3000 nm.