Fluxless Wafer Bonding in Vacuum Using Electroplated Sn–Ag Layers

A wafer-to-wafer bonding process using Sn-Ag solder without any flux is successfully developed. This fluxless or flux-free feature makes void-free and uniform bonding layers possible. This is in contrast to the fluxing process employed in nearly all soldering processes adapted in the electronic industry. With the use of flux, the flux or flux residues are easily trapped in the solder joint, resulting in voids and uneven solder layers. This is particularly true if the bonding area is large, such as the entire wafer. Thus, void-free wafer bonding using solders has never been reported. It is thus clear that the key to achieve void-free wafer soldering is to eliminate flux completely. The new fluxless process is performed in a vacuum furnace built in house to inhibit solder oxidation. To prevent oxidation during solder manufacturing, a thin Ag capping layer is plated over the Sn layer right after the Sn layer is plated over an entire 2-in silicon wafer having Cr/Au under bump metallurgy (UBM). This outer Ag layer is critical in preventing the inner Sn layer from oxidation when the wafer is exposed to air. The Si wafer with Cr/Au/Sn/Ag structure is bonded with another Si wafer with Cr/Au at 240degC in the vacuum furnace. To evaluate the joint quality and study the microstructure and composition, scanning acoustic microscopy (SAM), scanning electron microscopy (SEM), and energy dispersive X-ray spectroscopy (EDX) are used. A solder joint with only 1% void area is accomplished. The initial success of this process illustrates that it is indeed possible to bond entire wafers together with a thin metallic joint of high quality. This fluxless bonding technique can be extended to bonding wafers of different materials for new device and packaging applications.     

Solder joint reliability of a polymer reinforced wafer level package

Wafer level packages (WLPs) have demonstrated a very clear cost-advantage vs traditional wire-bond technologies, especially for small components that have a high number of dice and I/O per wafer. Ultra CSP^® is a WLP developed by the Kulicke & Soffa Flip Chip Division (formally Flip Chip Technologies). Typical products utilizing the Ultra chip scale package (CSP) have 5×5 or less area arrays at 0.5 mm pitch. This relatively small array has been limited by the inherent solder joint reliability of WLPs. A much larger subset of higher I/O IC’s could benefit from WLPs provided that standard reliability requirements are achieved without the use of underfill.A new polymer reinforcement technology, “Polymer Collar WLP™”, has been developed by K&S Flip Chip Division. Polymer Collar WLP utilizes a polymer reinforcement structure surrounding the solder joint and it has demonstrated more than 50% increase in solder joint life in thermal cycling tests. The most attractive feature of the Polymer Collar WLP process is its simplicity. A simple replacement of the standard solder flux with Polymer Collar material during the solder attach process is all that is required. This simplicity makes Polymer Collar the most cost-effective solution for adding a polymer reinforcement structure to the solder joint. Other methods in use today require additional complex and costly manufacturing steps.This Polymer Collar WLP is expected to widen the WLP market to include larger arrays where the Ultra CSP did not have suitable solder joint reliability.     

Improvements of solder ball shear strength of a wafer-level CSP using a novel Cu stud technology

The solder ball shear test has been widely adopted in the electronics industry to estimate the strength of solder ball attachment of advanced electronic packages. A solder ball with low shear strength is usually considered as a weak solder joint in package reliability testing. Consequently, demands for increasing the solder ball shear strength have risen in recent years. This work attempts to enhance the solder ball shear strength of the wafer level chip scale package (WLCSP) by forming a Cu stud on the surface of the solder pad. The novel Cu stud design technology has been achieved by using a simple semiconductor manufacturing process. To investigate the impact of Cu stud, a three-dimensional (3-D) nonlinear finite element method is used for Cu stud design. Furthermore, the shear force-displacement curves, obtained by computational analysis, are compared with the experimental results to demonstrate the accuracy of the finite element models. This investigation also explores the effects of various parameters including the Cu stud's dimension, shape, and material properties on solder ball shear strength. The analytical results establish that a suitable size of Cu stud in a solder ball can effectively enhance the ball's shear strength.     

Evaluation and optimization of package processing and design through solder joint profile prediction

Solder joints are generated using a variety of methods to provide both mechanical and electrical connection for applications such as flip-chip, wafer level packaging, fine pitch, ball-grid array, and chip scale packages. Solder joint shape prediction has been incorporated as a key tool to aid in process development, wafer level and package level design and development, assembly, and reliability enhancement. This work demonstrates the application of an analytical model and the Surface Evolver software in analyzing a variety of solder processing methods and package types. Bump and joint shape prediction was conducted for the design of wafer level bumping, flip-chip assembly, and wafer level packaging. The results from the prediction methodologies are validated with experimentally measured geometries at each level of design.     

An overview of solder bump shape prediction algorithms withvalidations

The trend to reduce the size of electronic packages and develop increasingly sophisticated electronic devices with more, higher density inputs/outputs (I/Os), leads to the use of area array packages using chip scale packaging (CSP), flip chip (FC), and wafer level packaging (WLP) technologies. Greater attention has been paid to the reliability of solder joints and the assembly yield of the surface mounting process as use of advanced electronic packaging technologies has increased. The solder joint reliability has been observed to be highly dependent on solder joint geometry as well as solder material properties, such that predicting solder reflow shape became a critical issue for the electronic research community. In general, the truncated sphere method, the analytical solution and the energy-based algorithm are the three major methods for solder reflow geometry prediction. This research develops solder joint reliability design guidelines to accurately predict both the solder bump geometry and the standoff height for reflow soldered joints in area array packages. Three simulation methods such as truncated-sphere theory force-balanced analytical solution and energy-based approach for prediction of the solder bump geometry are each examined in detail, and the thermal enhanced BGA (TBGA) and flip chip packages are selected as the benchmark models to compare the simulation and experimental results. The simulation results indicate that all three methods can accurately predict the solder reflow shape in an accurate range     

Wafer level packaging of a tape flip-chip chip scale packages

The advent of chip scale packages (CSPs) within the semiconductor community has led to the development of wafer scale assembly (WSA) or wafer level packaging (WLP) manufacturing in order to raise assembly efficiencies and lower operating costs. Texas Instruments (TI) has developed a unique WLP process for forming flip-chip, ball grid array packages. The die inputs and outputs of the TI CSP are connected through solder bumps to a polyimide film interposer. Solder balls on the other side of the interposer complete the electrical connection to a customer’s printed circuit board. A wafer-sized array of interposers designed to match the pattern of dies on a wafer is aligned and reflowed to a bumped wafer. The TI WLP process is completed by singulating the CSPs from the wafer using standard wafer saw equipment.Attachment of the interposer to the die as well as applying the die and board level solder bumps are carried out in wafer form using a new bumping technology called Tacky Dots™. Tacky Dots uses an array of sticky dots formed in a photosensitive coating laminated to a polyimide film for transferring and attaching solder spheres to semiconductor substrates. A populated film containing one solder sphere per Tacky Dot is positioned over the wafer or interposer and lowered until the spheres contact the pads. A reflow process transfers the spheres from the film to the wafer or interposer and the film is removed once the spheres have frozen.This paper illustrates the process steps and custom equipment developed for forming the TI CSP. The strategic use of finite element modeling for optimizing the design of the package is outlined. The paper concludes by summarizing the current package level reliability results.     

WLCSP中微焊球结构尺寸对其热应力的影响

晶圆级芯片尺寸封装(WLCSP)微焊球结构尺寸对其热机械可靠性有重要的影响。通过二维有限元模拟筛选出对WLCSP微焊球及其凸点下金属层(UBM)中热应力影响显著的参数,采用完全因子实验和多因子方差统计分析定量评估各种因子影响的显著性,最后建立三维模型,用子模型技术研究关键尺寸因子对热应力变化的影响。研究发现,焊球半径是影响焊球热应力的最关键尺寸因子,电镀铜开口和铜焊盘厚度对焊球热应力的影响也较显著;钝化层开口和焊球半径是影响UBM热应力的最关键尺寸因子。随着焊球半径增大,焊球热应力减小。     

Effect of geometry and temperature cycle on the reliability of WLCSP solder joints

The wafer level-chip-scale package (WLCSP) is designed to have external dimensions equal to that of the silicon device. This new package type is an extension of flip chip packaging technology to standard surface mount technology. The package has been targeted for low pin count (less than 30) and has high volume applications such as cellular phones, hand-held PDAs, etc. The WL-CSP is typically used without underfill and so solder joint reliability is a prime concern. Thus it is imperative to have a good understanding of the various design parameters of the package that affect the reliability of the solder joint. This paper presents the effect of geometrical parameters such as die size, die thickness, solder joint diameter and height on the reliability of solder joints. The effects of different dwell times, temperature range and ramp rates on the reliability of the solder joints is also studied by applying different temperature cycles to the package. A 16 I/O ADI WLCSP called MicroCSP is used as the primary test vehicle for the thermal cycling tests performed with different ramp/hold profiles. The energy-based model developed by Robert Darveaux is used to assess the reliability of solder joints.     

喷镀系统在凸点制备中的应用

介绍了利用电镀法制造晶圆凸点的典型工艺和喷镀设备.喷镀系统是凸点电镀设备中最关健的部件.通过计算机软件模拟试验,对喷镀系统中的喷杯体和匀流板等各种参数和位置进行了优化设计,并在设备上应用验证.该系统在凸点电镀设备上应用后,在晶圆片上成功做出了高质量的均匀凸点,取得了良好效果.     

Board-level reliability of Pb-free solder joints of TSOP and various CSPs

To evaluate various Pb-free solder systems for leaded package, thin small outline packages (TSOPs) and chip scale packages (CSPs) including leadframe CSP (LFCSP), fine pitch BGA (FBGA), and wafer level CSP (WLCSP) were characterized in terms of board level and mechanical solder joint reliability. For board level solder joint reliability test of TSOPs, daisy chain samples having pure-Sn were prepared and placed on daisy chain printed circuit board (PCB) with Pb-free solder pastes. For CSPs, the same composition of Pb-free solder balls and solder pastes were used for assembly of daisy chain PCB. The samples were subjected to temperature cycle (T/C) tests (-65/spl deg/C/spl sim/150/spl deg/C, -55/spl deg/C/spl sim/125/spl deg/C, 2 cycles/h). Solder joint lifetime was electrically monitored by resistance measurement and the metallurgical characteristics of solder joint were analyzed by microstructural observation on a cross-section sample. In addition, mechanical tests including shock test, variable frequency vibration test, and four point twisting test were carried out with daisy chain packages too. In order to compare the effect of Pb-free solders with those of Sn-Pb solder, Sn-Pb solder balls and solder paste were included. According to this paper, most Pb-free solder systems were compatible with the conventional Sn-Pb solder with respect to board level and mechanical solder joint reliability. For application of Pb-free solder to WLCSP, Cu diffusion barrier layer is required to block the excessive Cu diffusion, which induced Cu trace failure.     

Materials and Processes Issues in Fine Pitch Eutectic Solder Flip Chip Interconnection

New product designs within the electronics packaging industry continue to demand interconnects at shrinking geometry, both at the integrated circuit and supporting circuit board substrate level, thereby creating numerous manufacturing challenges. Flip chip on board (FCOB) applications are currently being driven by the need for reduced manufacturing costs and higher volume robust production capability. One of today's low cost FCOB solutions has emerged as an extension of the existing infrastructure for surface mount technology and combines an under bump metallization (UBM) with a stencil printing solder bumping process, to generate mechanically robust joint structures with low electrical resistance between chip and board. Although electroless Ni plating of the UBM, and stencil printing for solder paste deposition have been widely used in commercial industrial applications, there still exists a number of technical issues related to these materials and processes as the joint geometry is further reduced. This paper reports on trials with electroless Ni plating and stencil paste printing and the correlation between process variables in the formation of bumps and the shear strength of said bumps at different geometries. The effect of precise control of tolerances in squeegees, stencils and wafer fixtures was examined to enable the optimization of the materials, processes, and tooling for reduction of bumping defects     

Electroless remetallization of aluminum bond pads on CMOS driverchip for flip-chip attachment to vertical cavity surface emitting lasers(VCSEL's)

A method for remetallizing the bond pads of electronic chips, which are initially metallized with aluminum or aluminum alloy is presented. Application of electroless plating process for the remetallization of aluminum to a solderable gold surface can reduce the cost and complication of the widely accepted flip-chip interconnection technology. We have developed a step by step nickel/gold wafer bumping technique (remetallized bump height is 5.0 μm) for the appropriate solder (15.0 μm of In:Pb). Variation of roughness of the remetallized surface has been studied carefully. We have completed prototype research studies on test devices and successfully packaged the flip-chip bonded hybrid pair of a CMOS driver chip and a dummy structure of vertical cavity surface emitting laser (VCSEL) array. Cross section of the flip-chip solder joint is studied. Also, adhesion strength of the metal deposit is investigated     

42Sn58Bi—96.5Sn3.5Ag系焊点疲劳性能的研究

本文研究了热处理时间对不同组分的４２Ｓｎ５８Ｂｉ－９６．５Ｓｎ３．５Ａｇ焊料疲劳性能的影响,研究发现适当的热处理时间能提高焊点的机械强度,延长焊点的疲劳寿命。     

Pb-free Sn/3.5Ag electroplating bumping process and under bump metallization (UBM)

Pb-free solder is one of the biggest issues in today's electronic packaging industry. This paper introduces a newly developed Sn/3.5Ag alloy plating process for wafer level bumping. The effects of Under Bump Metallization (UBM) on the process, interfacial reaction, and mechanical strength have been investigated. Four different types of sputtering-based UBM layers-TiW/Cu/electroplated Cu, Cr/CrCu/Cu, NiV/Cu, and TiW/NiV-were fabricated with eutectic Pb/63Sn and Sn/3.5Ag solder. The result shows that the Sn/Ag solder gains Cu or Ni from UBM's and becomes Sn/Ag/Cu or Sn/Ag/Ni during reflow process. Sn/Ag solder has higher reactivity with Cu and Ni than Pb/63Sn. The Intermetallic Compound (IMC) spalling from the interface between UBM/solder has been observed on Cr/CrCu/Cu and TiW/NiV UBM's. However, the IMC spalling phenomena did not decrease the bump shear strength with a bump size of 110 /spl mu/m, whereas a size of 60 /spl mu/m brought a decrease in shear value and failure mode change.     

Design and analysis of wafer-level CSP with a double-pad structure

Wafer level chip scale packaging (WLCSP) is very promising for the miniature of packaging size, the reduction of manufacturing cost, and the enhancement of the package's performance. However, the long-term board level reliability of integrated circuit (IC) devices using wafer level packaging with large distances from neutral point (DNP) is still not fully solved. This research proposes a novel, alternative WLCSP design for facilitating higher board level reliability. The main feature of the novel WLCSP is basically in its double-pad structure (DPS) design in the interface between solder joints and silicon chip. To characterize the solder joint reliability of the DPS-WLCSP, a three-dimensional (3-D) nonlinear finite element (FE) modeling technique is employed. Based on the FE modeling, the numerical accelerated thermal cycling (ATC) test is performed under the JEDEC temperature cycling specification. The validity of the proposed FE modeling is verified by using an optical measurement method Twyman-Green interferometer. By the derived incremental equivalent plastic strain, the cumulative cycles to failure in solder joints associated with these four WLCSP are assessed based on a modified Coffin-Manson relationship. The modeled fatigue life is compared against the experimental results that adopt a two-parameter Weibull distribution to characterize cycles-to-failure distribution. For comparison, the investigation also involves several existing types of WLCSP, including the conventional (C-WLCSP), the copper post (CP-WLCSP), and the polymer post (PP-WLCSP), and solder joint reliability performance among these WLCSP packages is extensively compared. The results demonstrate that the DPS-WLCSP design not only has potential for enhancing the corresponding solder joint reliability but is also particularly effective in manufacturing process and cost. And finally, some reliability-enhanced design guidelines are provided through parametric design of the DPS.     

Modeling and analysis of 96.5Sn-3.5Ag lead-free solder joints ofwafer level chip scale package on buildup microvia printed circuit board

In this study, time-temperature-dependent nonlinear analyses of lead-free solder bumped wafer level chip scale package (WLCSP) on microvia buildup printed circuit board (PCB) assemblies subjected to thermal cycling conditions are presented. The lead-free solder considered is 96.5Sn-3.5Ag. The 62Sn-2Ag-36Pb solder is also considered to establish a baseline. These two solder alloys are assumed to obey the Garofalo-Arrhenius steady-state creep constitutive law. The shear stress and shear creep strain hysteresis loops, shear stress history, shear creep strain history, and creep strain density range at the corner solder joint are presented for a better understanding of the thermal-mechanical behavior of the lead-free solder bumped WLCSP on microvia buildup PCB assemblies     

基于再流焊冷却过程应力分析的板极组件BGA焊点参数优化

建立了板级组件BGA（Ball Grid Array）焊点有限元分析模型,对BGA焊点进行了再流焊冷却过程应力仿真分析,设计并完成了验证性实验以验证仿真分析方法的有效性,分析了焊点结构参数和材料变化对焊点再流焊冷却过程应力应变的影响,采用响应面法建立了焊点应力与结构参数的回归方程,结合遗传算法对焊点结构参数进行了优化.结果表明：实验结果证明了仿真分析的有效性;焊点应力随着焊点高度的增加而增大,随着焊点直径的增加而减小;最优焊点结构参数水平组合为：焊点高度0.44mm、焊点直径0.65mm、焊盘直径0.52mm和焊点间距1.10mm;对该最优焊点仿真验证表明最大应力下降了0.1101MPa.     

倒装焊复合SnPb焊点应变应力分析

近年来,在微电子工业中,轻、薄、短、小是目前电子封装技术发展的趋势。因此,倒装焊技术应用越来越广,而焊点的可靠性在倒装焊技术中变得越来越重要。采用有限元软件,模拟、分析了焊点高度和下填料对焊点在热载荷作用下的应力应变值。     

Selective bonding and encapsulation for wafer-level vacuum packaging of MEMS and related micro systems

A laser-assisted bonding technique is demonstrated for low temperature region selective processing. A continuous wave carbon dioxide (CO₂) laser (λ=10.6 μm) is used for solder (Pb37/Sn63) bonding of metallized silicon substrates (chips or wafers) for MEMS applications. Laser-assisted selective heating of silicon led to the reflow of an electroplated, or screen-printed, intermediate solder layer which produced silicon–solder–silicon joints. The bonding process was performed on fixtures in a vacuum chamber at an air pressure of 10⁻³ Torr to achieve fluxless soldering and vacuum encapsulation. The bonding temperature at the sealing ring was controlled to be close to the reflow temperature of the solder. Pull test results showed that the joint was sufficiently strong. Helium leak testing showed that the leak rate of the package met the requirements of MIL-STD-883E under optimized bonding conditions and bonded packages survived thermal shock testing. The testing, based on a design of experiments method, indicated that both laser incident power and scribe velocity significantly influenced bonding results. This novel method is especially suitable for encapsulation and vacuum packaging of chips or wafers containing MEMS and other micro devices with low temperature budgets, where managing stress distribution is important. Further, released and encapsulated devices on the sealed wafers can be diced without damaging the MEMS devices at wafer level.     

Design and optimization of thermo-mechanical reliability in wafer level packaging

In this paper, a variety of wafer level packaging (WLP) structures, including both fan-in and fan-out WLPs, are investigated for solder joint thermo-mechanical reliability performance, from a structural design point of view. The effects of redistribution layer (RDL), bump structural design/material selection, polymer-cored ball application, and PCB design/material selection are studied. The investigation focuses on four different WLP technologies: standard WLP (ball on I/O WLP), ball on polymer WLP without under bump metallurgy (UBM) layer, ball on polymer WLP with UBM layer, and encapsulated copper post WLP. Ball on I/O WLP, in which solder balls are directly attached to the metal pads on silicon wafer, is used as a benchmark for the analysis. 3-D finite element modeling is performed to investigate the effects of WLP structures, UBM layer, polymer film material properties (in ball on polymer WLP), and encapsulated epoxy material properties (in copper post WLP). Both ball on polymer and copper post WLPs have shown great reliability improvement in thermal cycling. For ball on polymer WLP structures, polymer film between silicon and solder balls creates a ‘cushion’ effect to reduce the stresses in solder joints. Such cushion effect can be achieved either by an extremely compliant film or a ‘hard’ film with a large coefficient of thermal expansion. Encapsulated copper post WLP shows the best thermo-mechanical performance among the four WLP structures. Furthermore, for a fan-out WLP, it has been found that the critical solder balls are the outermost solder balls under die-area, where the maximum thermal mismatch takes place. In a fan-out WLP package, chip size, other than package size, determines the limit of solder joint reliability. This paper also discusses the polymer-cored solder ball applications to enhance thermo-mechanical reliability of solder joints. Finally, both experimental and finite element analysis have demonstrated that making corner balls non-electrically connected can greatly improve the WLP thermo-mechanical reliability.