具有双绝缘层和修饰电极的薄膜场效应晶体管

研究了具有OTS/SiO2双绝缘层结构及MoO3/Al电极结构的有机薄膜晶体管.器件是以热生长的Si02作为有机薄膜晶体管的栅绝缘层,酞菁铜作为有源层的.OTS/SiO2双绝缘层的结构提高了器件的场效应迁移率和开关电流比,降低了阈值电压.实验表明在同样的栅极电压下,具有MoO3/Al电极的器件和金电极的器件有着相似的源漏输出电流.结果显示具有OTS/SiO2双绝缘层及MoO3/Al电极结构的器件能有效改进有机薄膜晶体管的性能.     

具有无机有机双绝缘层和修饰电极的薄膜晶体管

研究了有机薄膜晶体管器件.器件是以热生长的SiO2作为有机薄膜晶体管的栅绝缘层,酞菁铜作为有源层的.实验表明采用一种硅烷耦合剂-十八烷基三氯硅烷(OTS)修饰SiO2可以有效地降低栅绝缘层的表面能从而明显提高了器件的性能.器件的场效应迁移率提高了2.5倍、阈值电压降低了3 V、开关电流比从103增加到104.同时我们采用MoO3修饰铝作为器件的源漏电极,形成MoO3/Al双层电极结构.实验表明在同样的栅极电压下,具有MoO3/Al 电极的器件和金电极的器件有着相似的源漏输出电流Ids.结果显示具有OTS/SiO2双绝缘层的及MoO3/Al 电极结构的器件能有效改进有机薄膜晶体管的性能.     

绝缘层/有源层界面修饰及对有机薄膜晶体管性能的影响

制备了具有修饰层的有机薄膜场效应晶体管,采用高掺杂Si作为栅极,传统的无机绝缘材料SiO2作为栅绝缘层,有机绝缘材料PMMA或OTS作为修饰层,CuPc作为有源层,Au作为源、漏极.测试结果表明,采用经过修饰的栅绝缘层SiO2/OTS和SiO2/PMMA的两种器件的开关电流比最高可达8×104,迁移率最高为1.22×10-3cm2/(V·s),而漏电流仅为10-10A,总体性能优于单层SiO2器件.     

绝缘层/有源层界面修饰及对有机薄膜晶体管性能的影响

制备了具有修饰层的有机薄膜场效应晶体管,采用高掺杂Si作为栅极,传统的无机绝缘材料SiO2作为栅绝缘层,有机绝缘材料PMMA或OTS作为修饰层,CuPc作为有源层,Au作为源、漏极.测试结果表明,采用经过修饰的栅绝缘层SiO2/OTS和SiO2/PMMA的两种器件的开关电流比最高可达8×104,迁移率最高为1.22×10-3cm2/(V·s),而漏电流仅为10-10A,总体性能优于单层SiO2器件.     

具有SiO2/SiNX/SiO2 复合绝缘层的有机薄膜晶体管

We have investigated a SiO_2/SiN_x/SiO_2 composite insulation layer structured gate dielectric for an organic thin film transistor(OTFT) with the purpose of improving the performance of the SiO_2 gate insulator. The SiO_2/SiN_x/SiO_2 composite insulation layer was prepared by magnetron sputtering.Compared with the same thickness of a SiO_2 insulation layer device,the SiO_2/SiN_x/SiO_2 composite insulation layer is an effective method of fabricating OTFT with improved electric characteristics and decrease...     

具有双绝缘层的有机薄膜晶体管

为了提高SiO2单绝缘层器件的性能,在SiO2绝缘层的表面用旋涂的方法制备一层大约50 nm厚度的PMMA.实验结果表明用无机/有机双绝缘层可以有效的提高器件的性能同时降低器件的漏电流.计算出了载流子迁移率和开关电流比,基于PMMA/SiO2双绝缘层器件的载流子迁移率和开关电流比分别是4.0×10-3cm2/Vs和104.     

基于双层界面修饰的高性能底栅底接触有机薄膜晶体管研究

一种兼容的双界面修饰被成功应用于修饰有机薄膜晶体管的底接触电极和绝缘层界面。这种兼容的双界面修饰为首先采用4-FTP修饰银源漏电极进而提高其功函数,然后采用HMDS或者OTS进一步修饰二氧化硅绝缘层界面。结果显示场迁移率得到极大提高,其最优特性高达0.91 cm2V-1s-1。     

有机双电层电容器用活性炭电极的修饰

利用石墨、炭黑、碳纳米管三种导电碳材料,对高比表面积活性炭进行掺杂修饰,制备有机电解液双电层电容器用薄膜电极。经电化学测试发现,在 1 mol/L 的 LiPF6/EC-DEC(体积比 1∶1)溶液中,经不同导电材料修饰后的活性炭电极,其单电极比容量和大电流充放电性能均有较大改善。其中,掺杂 10%(质量分数)碳纳米管的活性炭电极,在 330 mA/g 电流密度下的单电极比容量可达 81 F/g,比未掺杂活性炭电极 60 F/g 的比容量提高了 35%;电流密度从 60 mA/g 增至 330 mA/g,该电极的容量保持率为 79.4%。     

宽带隙ZnMgO的电学特性及其透明薄膜场效应晶体管

首次提出了用六方相晶体结构的宽带隙ZnMgO作为薄膜场效应晶体管(TFT)的沟道层,用立方相ZnMgO纳米晶体薄膜作为栅绝缘层,在实验中用透明的ITO导电玻璃作为衬底,通过连续沉积六方和立方相结构的纳米ZnMgO晶体薄膜,并通过光刻、电极工艺等,研制了透明的ZnO基TFT,TFT的电流开关比达到104,场效应迁移率为0.6cm2/(V·s).在偏压2.5MV/cm下漏电流为10-8A.     

C8 BTBT薄膜结晶形貌及OTFT器件性能研究

以p型共轭有机小分子2,7二辛基[1]苯并噻吩并[3,2‐b]苯并噻吩(C8‐BTBT)作为底栅顶接触有机薄膜晶体管(OTFT)的有源层,采用浸渍提拉法、喷墨打印法和真空蒸镀法三种制备工艺,探究半导体薄膜载流子迁移率与结晶形貌的关系,发现不同工艺下有机小分子呈现出不同的生长行为和结晶情况,在很大程度上决定了OTFT器件性能的优劣;此外,通过XRD分析研究了退火处理对C8‐BTBT结晶的影响。结果表明,真空蒸镀制备的薄膜具有更高的结晶度、衬底覆盖率高,并且呈现出SK(Stranski‐Krastanov)模式的结晶生长特征,相应器件中陷阱密度最低,迁移率高达5.44 cm^2·V^-1·s^-1,开关比超过106;且退火处理会严重破坏C8‐BTBT薄膜的结晶。因此,控制半导体层的生长行为,提升半导体层的覆盖率和结晶度是制备高性能共轭小分子OTFT器件的有效途径。     

p-Si TFT栅绝缘层用SiNx薄膜界面特性的研究

以NH3和SiH4为反应源气体,在低温下采用射频等离子体增强化学气相沉积(RF-PECVD)法在多晶硅(p-Si)衬底上沉积了SiNx薄膜.系统地分析讨论了沉积温度、射频功率、反应源气体流量比对SiNx薄膜界面特性的影响.分析表明,沉积温度和射频功率主要是通过影响SiNx薄膜中的si/N比和H含量影响薄膜的界面特性,而NH3/SiH4流量比则主要通过影响薄膜中的H含量影响薄膜界面特性.实验制备的SiNx薄膜层中的固定电荷密度、可动离子密度、SiNx与p-si之间的界面态密度分别达到了1.7×1012/cm2、1.4×1012/cm2、3.5×1012/(eV·cm2),其界面特性达到了制备高质量p-si TFT栅绝缘层的性能要求.     

Formaldehyde OTFT Sensors Based on Airbrushed Different Ratios of P3HT/ZnO Films

The formaldehyde (HCHO) detecting at room temperature is of great significance. Different ratios of P3HT/ZnO composite films (3:1, 1:1, and 1:3) were deposited on the organic thin film transistor (OTFT) by spray-deposition technology, and the electrical properties and HCHO-sensing properties of all the prepared OTFT devices were measured by Keithley 4200-SCS source measurement unit. The results show that the OTFT sensor based on the P3HT/ZnO films with the ratio of 1:1 exhibited the best output and transfer curves. Different changing tendency were observed with the increase of ZnO proportion when exposed to HCHO at room temperature, and the device with the ratio of 1:1 behaved a good response and recovery characteristics.     

Organic thin film transistors with a SiO2/SiNx/SiO2 composite insulator layer

We have investigated a SiO₂/SiN_x/SiO₂ composite insulation layer structured gate dielectric for an organic thin film transistor（OTFT） with the purpose of improving the performance of the SiO₂ gate insulator. The SiO₂/SiN_x/SiO₂ composite insulation layer was prepared by magnetron sputtering.Compared with the same thickness of a SiO₂ insulation layer device,the SiO₂/SiN_x/SiO₂ composite insulation layer is an effective method of fabricating OTFT with improved electric characteristics and decreased leakage current.Electrical parameters such as carrier mobility by field effect measurement have been calculated.The performances of different insulating layer devices have been studied,and the results demonstrate that when the insulation layer thickness increases,the off-state current decreases.     

Improvement of n-type OTFT electrical stability by gold electrode modification

N-type organic thin film transistors (OTFT) containing modified gold electrodes have been fabricated to investigate the influence of the self assembled monolayer on the transistor characteristics. We report on the effect of drain/source modification by thiol derivatives on the performances, electrical parameters uniformity and electrical stability of C₆₀ transistors. In the literature, electrical instability is often attributed to organic semiconductor (OSC), OSC-insulator interface and insulator. We found here that OSC-metal interfaces affect dramatically the operational stability for bottom gate/bottom contact structure. These effects have been attributed to morphological evolution at the interface metal-OSC induced by the self-assembled monolayers.     

基于有机薄膜晶体管电特性曲线获取迁移率方法的研究

场效应迁移率是描述有机薄膜晶体管(OTFT)性能的 重要参数之一,目前OTFT场效应迁移率主要根据实验测得OTFT电特性曲线通过拟合计算方法 获得。本文针对这种方法进行深入研究发现,OTFT的场效应迁 移率与其工作状态有关。在线性工作状态下,OTFT的线性区场效应迁移率随 着 栅电压的增加而增大;在饱和工作状态下,当漏电压VD>1.5VGmax时,饱和区场效应迁移率 为一定值,表明采用此值表征OTFT的电性能更加客观和精确。