La2O3掺杂的SrTiO3陶瓷的介电性质

SrTiO_3陶瓷是一种具有多功能特性的介质材料。用La_2O_3掺杂改性的SrTiO_3陶瓷,可以提高其介电常数和降低介质损耗,对其介电温度特性和介电频率特性也有明显的改善.本文主要报道 La_2O_3对SrTiO_3陶瓷介电性质的影响。     

SrTiO_3/CaCu_3Ti_4O_(12)复合陶瓷材料的介电性能

本文采用固相反应法制备了xSrTiO_3/(1-x)CaCu_3Ti_4O_(12)(x=0,0.2,0.4,0.6,0.8,1)复合陶瓷,研究了复合材料的物相、微观结构和宽温度宽频率范围内的介电性能。结果表明:在1348~1600K的温度范围内烧结能够得到致密性良好的xSrTiO_3/(1-x)CaCu_3Ti_4O_(12)(x=0,0.2,0.4,0.6,0.8,1)复合陶瓷。频率为100kHz时,样品的室温介电常数随SrTiO_3含量的增加而减少,从71358(x=0)单调减少至270(x=1),其变化规律遵循Lichtenecker法则。介电损耗随SrTiO_3含量的增加先增大后减少。当x=0.2时,样品与CaCu_3Ti_4O_(12)陶瓷的介电性能相似,存在低温的介电弛豫和巨介电常数平台。随着SrTiO_3含量的增加,复合陶瓷的低温介电弛豫激活能增大,介电响应被抑制,而高温介电响应由于高温电导的影响而增强,使得CaCu_3Ti_4O_(12)特有的巨介电常数平台随着SrTiO_3的增加逐渐消失,xSrTiO_3/(1-x)CaCu_3Ti_4O_(12)复合材料的温度依赖性增强。     

Mg4Nb2O9/SrTiO3复合陶瓷的烧结特性和微波介电性能

制备Li_2CO_3-V_2O_5(LV)共掺杂0.6Mg_4Nb_2O_9-0.4SrTiO_3复合陶瓷,研究了LV掺杂对其烧结特性、相结构和微波介电性能的影响。结果表明:一定量LV掺杂使0.6Mg_4Nb_2O_9-0.4SrTiO_3复合陶瓷生成了Sr(NbTi)O_(3+δ)和MgO杂相,并使其致密化烧结温度降低(至1175℃);1.5%LV掺杂,在1175℃烧结5 h的样品具有较高的微波介电性能:τ_f=0.15 ppm/℃,ε_τ=20.1,Q·f=10240 GHz(at 8.5 GHz)。     

复相弛豫铁电陶瓷的相组成与介电性能

采用两相混合烧结法在Pb（Zn1／3Nb2／3）O3－BaTiO3－PbTiO3系统中制备了弛豫铁电陶瓷材料．相组成研究表明，该陶瓷具有两相共存的复相结构．对复相陶瓷的介电性能进行了研究，结果表明，复相结构可有效地改善弛豫铁电陶瓷的介温特性、频率特性和介质老化性能．     

无铅非线性介电储能陶瓷:现状与挑战

相对于聚合物等储能介质材料,介电陶瓷具有温度稳定性好和循环寿命长的优点,是制备脉冲功率储能电容器的优秀候选材料。但目前介电陶瓷的储能密度相对较低,不能满足脉冲功率设备小型化的要求。因此,如何显著提高介电陶瓷的储能密度成为近年来功能陶瓷研究的热点之一。本文首先介绍了介电储能电容器对陶瓷材料性能的要求,然后结合本课题组的研究工作,评述了BaTiO3基、BiFeO3基、(K0.5Na0.5)NbO3基无铅弛豫铁电陶瓷和(Bi0.5Na0.5)TiO3基、AgNbO3基无铅反铁电陶瓷储能特性的研究现状,重点阐述了不同材料体系的组分设计思路及相关储能特性,分析了无铅非线性介电储能陶瓷所面临的机遇和挑战,指出了应对策略。最后,展望了下一步的研究方向和内容。     

介电陶瓷／聚合物复合材料

介电陶瓷/聚合物复合材料是介质材料的新领域,它的综合性能远优于各单独组分。本文在回顾其开发概况的基础上评述了BaTiO_3/PVDF介电复合材料的研究进展。据报道,70(wt)%BaTiO_3的BaTiO_3/PVDF复合材料有较高的介电常数和热释电系数等。对材料的XRD行为、在不同温度和不同频率的介电性变化亦有详细研究。表明介电陶瓷/聚合物复合材料是值得研究的、介电陶瓷和介电聚合物的理想替代材料。     

Zn_2SnO_4掺杂对SrTiO_3陶瓷烧结温度和储能性能的影响

采用固相反应法制备了SrTiO_3+xmol%Zn_2SnO_4(x=1,2,5,10)陶瓷,研究了Zn_2SnO_4掺杂对SrTiO_3陶瓷烧结温度和储能性能的影响。结果表明,Zn_2SnO_4掺杂可将SrTiO_3陶瓷的最佳烧结温度从1 400℃降低至1 200℃。随着掺杂量的增加,SrTiO_3陶瓷的室温介电常数逐渐减小,击穿电场和储能密度呈现先增大而后减小的趋势。当Zn_2SnO_4掺杂量为2 mol%时,样品具有最大的击穿电场250 kV/cm和最高的储能密度1.06 J/cm~3。相较于未经掺杂的SrTiO_3陶瓷,储能密度提高了1.8倍。深入研究表明,由于烧结温度降低,SrTiO_3陶瓷的平均晶粒尺寸从5.5μm降低至0.8μm左右,从而增加了晶界的相对含量,提高了材料的绝缘性能,进而增强了SrTiO_3陶瓷的击穿电场,最终导致了SrTiO_3陶瓷储能密度的提高。     

稀土氧化物掺杂对钛酸钡基陶瓷电容器材料性能的影响

研究了 BaTiO_3基陶瓷电容器材料掺杂稀土元素对介电常数,热稳定性和介电损耗的影响。分别在 Ba-TiO_3ZnNb_2O_6中加入稀土氧化物 CeO_2、Sm_2O_3、Dy_2O_3等,测量了它们的介电常数和介电损耗及其与温度的关系(ε～T、tanδ～T),比较了三种稀土氧化物对陶瓷材料介电性质的影响,得到了一些有益的结果。     

La2O3掺杂（Na0．5 Bi0．5）0．94 Ba0.06 TiO3无铅压电陶瓷的介电弛豫研究

采用固相合成法制备了La2O3掺杂(Na0.5Bi0.5)0.94Ba0.06TiO3无铅压电陶瓷.研究了La2O3掺杂对(Na1/2Bi1/2)TiO3陶瓷晶体结构、介电性能与介电弛豫行为的影响.XRD分析表明,在所研究的组成范围内陶瓷材料均能够形成纯钙钛矿固溶体.材料的介电常数-温度曲线显示陶瓷具有两个介电反常峰Tf和Tm.修正的居里-维斯公式较好的描述了陶瓷弥散相变特征,弥散指数随La2O3掺杂量的增加而增加.掺杂量较低的陶瓷仅在低温介电反常峰Tf附近表现出明显的频率依赖性,随掺杂量的增加,陶瓷材料在室温和低温介电反常峰Tf之间都表现出明显的频率依赖性.并根据宏畴-微畴转变理论探讨了该体系陶瓷介电弛豫特性的机理.     

Dy掺杂BaTiO3陶瓷的制备及其介电性能

采用溶胶凝胶法制备了掺杂不同量Dy2O3(掺杂摩尔分数分别为0.001,0.002,0.003,0.005,0.007)的BaTiO3陶瓷,并对其介电性能的变化进行了研究.结果表明Dy2O3掺杂使BaTiO3陶瓷的电阻率明显降低,当添加量为0.005mol时,电阻率最小,为4.19×108Ω·m.Dy2O3掺杂使BaTiO3陶瓷的介电性能在不同掺杂量和不同频率下发生了明显变化,掺杂量为0.001mol、0.002mol时,BaTiO3陶瓷的介电特性和频率特性得到明显改善,在频率为1000Hz时介电性能相对较好.Dy2O3掺杂使BaTiO3陶瓷的介电温谱有所展宽,且Curie温度有所降低,交流电导随着温度的升高而增大,并在Curie点附近达到最高.     

稀土元素Ln对SrTiO3陶瓷介电性质的影响

用稀土元素改性的SrTiO3陶瓷采用传统的陶瓷工艺来制备.本文研究了SrTiO3基陶瓷,(1+x)SrTiO3+x(Ln@4TiO2)陶瓷的介电性质,并且报道了稀土元素Ln(Ln=La2O3、Nd2O3、Y2O3或CeO2)对SrTiO3基陶瓷的ετ和tgδ的温度特性和频率特性的影响.     

Phase evolution and microwave dielectric characteristics of Ti-substituted Mg2SiO4 forsterite ceramics

In the present paper, the phase evolution and microstructures of Ti-substituted Mg₂SiO₄ forsterite ceramics with nominal composition Mg₂(Si_1 − xTi_x)O₄ were investigated together with their microwave dielectric characteristics. MgSiO₃ secondary phase was observed in Mg₂SiO₄ ceramics, and it could be suppressed by Ti-substitution. However, Mg₂TiO₄ and MgTi₂O₅ appeared gradually with increasing Ti-substitution amount. The dielectric constant slightly increased from 6.8 to 8.1 with Ti-substitution, and the Qf value was improved significantly and reached the maximum at x = 0.1 where the optimum combination of microwave dielectric characteristics were achieved: ε_r = 7.4, Qf = 73,760 GHz at 15 GHz, τ_f = − 60 ppm/°C.     

Effects of dielectric thickness and contact area on current-voltage characteristics of thin film metal-insulator-metal diodes

Planar asymmetric Ni-NiO-Cr/Au thin film Metal-Insulator-Metal (MIM) tunnel diodes were fabricated for use in an ultra-sensitive infrared detector operating at room temperature. MIM diodes with contact areas of 100 μm² and 1 μm² were fabricated using standard Micro-Electro Mechanical Systems techniques. A linear relationship between the thickness of reactively sputtered Nickel Oxide (NiO) and the breakdown voltage was experimentally determined, and the diode performance was verified using a theoretical approach. Current-Voltage measurements of the MIM diode revealed an increase in the current from 1.5 nA to 0.8 mA, when the thickness of the dielectric and the contact area of the detector decreased. Also, the rectification ratios of the detectors were determined, exhibiting an asymmetry of 4.5 at 1 V and 6 at 0.2 V for detectors A and B, respectively. Further, the ratio was observed to be increasing with bias voltage suggesting a strong asymmetric behavior. The results are in agreement with the theoretical predictions confirming conduction via tunneling. The nonlinearity and asymmetry exhibited by these diodes suggests their viability in infrared applications.     

Dielectric properties and relaxation of Bi<Subscript>0·5</Subscript>Na<Subscript>0·5</Subscript>TiO<Subscript>3</Subscript>-BaNb<Subscript>2</Subscript>O<Subscript>6</Subscript> lead-free ceramics

A new member of lead-free piezoelectric ceramics of the BNT-based group, (1 − x)Bi_0·5Na_0·5TiO_3−x BaNb₂O₆, was prepared by conventional solid state reaction and its dielectric properties and relaxation was investigated. X-ray diffraction showed that BaNb2O6 diffused into the lattice of Bi_0·5Na_0·5TiO₃ to form a solid solution with perovskite-type structure. A diffuse character was proved by the linear fitting of the modified Curie-Weiss law. The temperature dependence of dielectric constant at different frequencies revealed that the solid solution exhibited relaxor characteristics different from classic relaxor ferroelectrics. The samples with x = 0·002 and 0·006 exhibited obvious relaxor characteristics near the low temperature dielectric abnormal peak, T _f, and the samples with x = 0·010 and 0·014 exhibited obvious relaxor characteristics between room temperature and T _f. The mechanism of relaxor behaviour was also discussed according to the macro-domain to micro-domain transition theory.     

反应溅射SiO_xN_y栅介质薄膜的成分及C-V特性研究

在前期工作基础上,研究了不同反应气体组合条件下SiQxNy栅介质薄膜的反应溅射制备.反应气体的不同组合首先导致薄膜氮氧比以及沉积速率的不同,并进一步导致薄膜电学性能的差异.对薄膜电容-电压特性的分析表明,沉积速率降低会使薄膜体缺陷密度减小,而氮含量的减少则有助于提高薄膜界面质量.最终结果显示,采用合适的反应气体组合(QN2=1.0sccm,Qo2=1.0sccm)制得的SiOxNy薄膜具有较低的体缺陷密度和较好的界面质量,适合于MOS栅介质领域的应用.     

微波对褐煤介电特性及干燥的影响

为研究微波干燥褐煤的可行性,选取云南昭通褐煤进行试验研究,采用微波介电特性变温测试系统研究褐煤介电特性及微波穿透深度随表观密度的变化。结果表明,褐煤介电特性与表观密度成正相关,穿透深度与表观密度成负相关,同时拟合得到褐煤表观密度与介电特性、微波穿透深度的关系式。采用微波干燥系统对不同功率和质量下的褐煤升温特性进行研究。结果表明,微波可以在1min内将褐煤升温至100℃,最大干燥速率为0.198(g/g db)·min-1,微波加热过程中,温度变化表现出3个阶段:快速升温阶段、恒温阶段、减速升温阶段。褐煤升温至100℃前,物料的质量和功率对升温速率影响不大,100℃之后,褐煤的升温速率随着功率的增加而增大,随物料质量增加而减小;通过微波干燥与常规干燥对比,发现当褐煤完全干燥时,微波干燥用时17min,常规干燥用时320min,微波干燥明显优于常规干燥。     

高介电陶瓷材料在油品介电精制方法中的应用

目前对于介电材料的研究与应用一般集中于电子产品及其相关领域，高介电陶瓷材料应用于油品精制领域还是一个新的尝试。首先简要介绍了介电力学精制工艺装置，并重点讨论了介电陶瓷在其中的应用及基本原理，最后选用几种不同介电常数的介电陶瓷材料在装置中进行了实验，实验证明，高介电陶瓷材料对油品有较好的精制效果，并且对于所选用的几种介电材料而言随着介电常数的增加精制效果也提高。     

Study of the characteristics of the soil of Chhattisgarh at X-band frequency

The real and imaginary parts (ε₁ and ε₂) of the complex dielectric constant (ε) of sand, silt and clay with varied moisture content have been determined experimentally under laboratory conditions at 9·967 GHz. using infinite sample method. The values of (ε₁) and (ε₂) first increase slowly with moisture content upto a certain transition point and then increase rapidly with moisture content     

钇掺杂改性PbTiO3纳米陶瓷介电特性及复阻抗研究*

报道了sol-gel技术制备Pb1-x YxTiO3纳米陶瓷(x=0.1%,0.2%,0.4%,0.8%,1.2%,1.6%).试样采用介电分析仪测试.结果发现,当钇掺杂量高于0.4%时,可以烧结得到致密陶瓷片,不同掺杂量的PbTiO3在居里温度区域都出现电容量激增现象.在该区域介电损耗(tgδ)出现突变峰,峰高依次为0.8%,0.4%,1.2%,居里点以下,tgδ大小顺序为0.4%＞0.8%＞1.2%.陶瓷复阻抗虚部随温度升高而降低,实部几乎不随温度变化.且居里点以上,实部和虚部复阻抗趋同.     

磁控反应溅射制备的Ta2O5薄膜的光学与介电性能

采用直流磁控反应溅射技术，在不同的Ar/O2比条件下制备了系列Ta2O5薄膜样品，采用紫外．可见光透射光谱和椭偏光谱测试分析技术，研究了Ta2O5薄膜在可见光范围内的透射率、折射率和消光系数；同时还采用HP 4192A阻抗分析仪测试分析了样品在500Hz～13MHz频段的介电谱，结果表明在300～700nm的可见光波长范围内，氧化钽薄膜的消光系数k→0，折射率＞2．0，透射率大约80％。500Hz下的低频介电常数5的典型值为20.1。损耗角正切tgδ为19.9。