In this work, dynamic surface temperature measurements as a function of current pulse peak density and length were performed on SiC-PiN epitaxial power diodes. The measurements were carried out using an infrared (IR) microscope developed in our lab capable of measuring space and time surface temperature distributions in semiconductor devices operating under self-heating conditions [Solid State Electron 2001;45(12):2057]. The minimum detected spot size is 15 μm, while the signal raising time is detector limited to about 1 μs. The lowest detectable temperature increment is at least 10 °C over room temperature.
Using this instrument, dynamic thermal phenomena in 4.5 kV SiC-PiN epitaxial power diodes [Mater Sci Forum 2001;353–356:727] subjected to 1 ms long 100–6000 A/cm2 and 0.1–5 ms long 3000 A/cm2 current pulses have been studied. The possibility of obtaining dynamic surface temperature information from SiC electronic devices operating under self-heating conditions with time constants in the order of ms is demonstrated. 相似文献