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当MOSFET器件的栅长缩小到纳米尺度以后,金属源/漏(S/D)结构具有一系列的优点:原子级突变结能够抑制短沟道效应(SCE),低S/D串联电阻和接触电阻,S/D形成的低温工艺适宜集成高k栅介质、金属栅和应变硅等新材料,使之成为掺杂硅S/D结构最有希望的替代者.文章主要介绍形成低肖特基势垒高度(SBH,Schottky Barrier Height)结材料的选择,以及采用杂质分凝、界面工程和应变工程等肖特基势垒调节技术的主要制备工艺和势垒调节机理. 相似文献
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《Latin America Transactions, IEEE (Revista IEEE America Latina)》2009,7(3):400-404
This paper presents a set of experiments used to develop a statistical system from translating speech to sign language for deaf people. This system is composed of an Automatic Speech Recognition (ASR) system, followed by a statistical translation module and an animated agent that represents the different signs. Two different approaches have been used to perform the translations: a phrase-based system and a finite state transducer. For the evaluation, the followings figures have been considered: WER (Word Error Rate), BLEU and NIST. The paper presents translation results of reference sentences and sentences from the Automatic Speech Recognizer. Also three different configurations have been evaluated for the Speech Recognizer. The best results were obtained with the finite state transducer, with a word error rate of 28.21% for the reference text, and 29.27% using the ASR output. 相似文献