Effect of Sintering Atmosphere on Isolated Pores During the Liquid-Phase Sintering of MgO-CaMgSiO4

The shrinkage behavior of isolated pores during the liquidphase sintering of MgO-CaMgSiO₄ at 1650°C in O₂ and N₂ atmospheres has been studied. When 90MgO- 10Ca MgSiO₄ specimens containing artificially produced large spherical pores are sintered in O₂, the liquid and grains flow into the pores as oxygen diffuses out. When sintered in N₂ the pores remain intact even after a long time, because the N₂ gas entrapped in them does not diffuse out. The effect of the sintering atmosphere has also been studied in a fine powder mixture of 80MgO 20CaMgSiO₄ composition. Changing the atmosphere from O₂ to N₂ during the sintering treatment reduces the porosity, probably because of the enhanced oxygen diffusion from the pores. The pores grow when the sintering atmosphere is changed from N₂ to O₂, probably because of oxygen diffusion into the pores from the specimen surface. The practical implication of these results is that changing the atmosphere from O₂ to air during the liquid-phase sintering of oxide ceramics can greatly reduce the porosity.     

Effects of Sintering Atmosphere on Densification Behavior and Piezoelectric Properties of Pb(Ni1/3Nb2/3)O3–PbZrO3 Ceramics

Densification of polycrystalline Pb(Ni_1/3Nb_2/3)O₃–PbTiO₃–PbZrO₃ (PNN–PT–PZ) specimens was enhanced as the partial pressure of O₂ in the sintering atmosphere was increased. This observation was attributed to the increase in the internal pressure of a closed pore due to the thermal decomposition of PbO at a low partial pressure of O₂. The relative dielectric permittivity (ε_r), d ₃₃, k _p, and grain size of sintered specimens were also increased as the partial pressure of O₂ in the sintering atmosphere was increased. The observed dependence of piezoelectric properties on the partial pressure of O₂ was discussed in terms of the enhanced formation of the A-site vacancy ( V "_Pb) or the suppression of the B-site defect ( V ¨_O) as the oxygen potential increased.     

Effect of Sintering Atmosphere on Densification of MgO-Doped Al2O3

The densification behavior of Al₂O₃-MgO (0.1 wt%) has been studied in O₂ and N₂ atmospheres. Powder compacts have been sintered at 1600°C for 0.5 to 8 h. For some specimens the sintering atmosphere has been changed after 30 min of sintering. Irrespective of sintering atmosphere, sintered densities are approximately the same up to 99% relative density, implying that the capillary pressure effect dominates the atmosphere effect for most of the densification stage. During extended sintering treatment the density of specimens sintered in O₂ becomes higher than that in N₂. When the sintering atmosphere is changed from O₂ to N₂, enhanced densification results, and vice versa. Such an effect of sintering atmosphere is explained by the diffusiveness of gases entrapped in pores, as well as by oxygen potential differences inside and outside of the specimen. Differences in grain growth rate in various atmospheres are discussed on the basis of different densification rates.     

Influence of SiO2 Addition on the Dielectric Properties and Microstructure of (Ba0.96Ca0.04)(Ti0.85Zr0.15)O3 Ceramics

In this study, the effect of SiO₂ doping on the sintering behavior, microstructure, and dielectric properties of BaTiO₃-based ceramics was investigated. Silica was added to (Ba_0.96Ca_0.04)(Ti_0.85Zr_0.15)O₃ (BCTZ) powder prepared using the solid-state method. SiO₂-doped BCTZ ceramics with a high density and a uniform grain size were obtained and sintered at 1220°C in a reducing atmosphere. A second phase (BaTiSiO₅) existed in samples when SiO₂ was added in excess of 1%. The amount of the second phases was observed to increase as the number of SiO₂ additives increased. It was found that BCTZ ceramics sintered with SiO₂ are helpful in reducing the sintering temperature for a typical thick film and MLCC applications. However, there were disadvantageous effects on the dielectric properties with mere addition of SiO₂ addition (3% and 5%) due to higher formation of BaTiSiO₅. Doping with a small amount of silica can improve the sintering and dielectric properties of BCTZ ceramics. In addition, to understand the effect of the BaTiSiO₅ phase on the dielectric properties of BCTZ ceramics, the BaTiSiO₅ composition was synthesized from individual BaCO₃, TiO₂, and SiO₂ powders using conventional solid-state methods. X-ray diffraction results show the presence of mainly the crystalline phase, BaTiSiO₅, in the sintered ceramics.     

Effects of Palladium Dispersions on Gas-Sensitive Conductivity of Semiconducting Ga2O3 Thin-Film Ceramics

The gas sensitivity of Ga₂O₃ thin-film n -type conductors was investigated at temperatures of 500–1000°C. Palladium dispersions whose particle sizes are dependent on the preceding annealing processes were deposited by a wet-chemical technique onto Ga₂O₃ thin-film ceramics. The palladium clusters and their temperature-dependent growth were detected using scanning electron microscopy micrographs and X-ray photoemission spectroscopy measurements. The effect of the palladium dispersions on the gas-sensitive behavior of the Ga₂O₃ ceramics was investigated in various O₂/H₂ mixtures in the N₂ carrier gas at 700°C. The conductivity of the ceramics treated in this way was dependent on the O₂ partial pressure, as well as on the H₂ partial pressure of the surrounding gas atmosphere. The ceramic conductivity can be described as a function of the O₂:H₂ ratio, in accordance with the relation σ( p O₂/ p H₂/)^−1/3.     

Low-Temperature Pressureless Sintering of Sr- and Mg-Doped Lanthanum Gallate Ceramics by Sintering Atmosphere Control

The present investigation reports a new processing technique that can reduce the sintering temperature of Sr- and Mg-doped lanthanum gallate (LSGM), a good candidate material for the electrolyte of the solid oxide fuel cell (SOFC). When LSGM was sintered at 1623 K for 5 h in N₂ or O₂, the samples were densified over 98% relative density. In contrast, only 93% relative density was achieved after sintering in air, the conventional sintering atmosphere. As a result of better densification in N₂ or O₂, the electrical conductivity of the N₂-sintered and air-annealed or the O₂-sintered sample was higher than that of the air-sintered sample by 30%. This result shows the beneficial effect of N₂ or O₂ sintering of LSGM and provides a high possibility of a low-temperature preparation of an LSGM-based SOFC.     

Characteristics of High-Q Microwave Dielectric Ceramics Nd(Co1/2Ti1/2)O3 With CuO Addition

We report the microwave dielectric properties and the microstructures of Nd(Co_1/2Ti_1/2)O₃ ceramics prepared by the conventional solid-state route. The prepared Nd(Co_1/2Ti_1/2)O₃ exhibits a mixture of Co and Ti showing a 1:1 order in the B site. Lowering the sintering temperature (as low as 1260°C) and promoting the densification of Nd(Co_1/2Ti_1/2)O₃ ceramics could be effectively achieved by adding CuO (up to 0.75 wt%). At 1350°C, Nd(Co_1/2Ti_1/2)O₃ ceramics with 0.5 wt% CuO addition possess a dielectric constant (ɛ_r) of 27.6, a Q × f value of 165 000 GHz (at 9 GHz), and a temperature coefficient of resonant frequency (τ_f) of −20 ppm/°C. By comparing with pure Nd(Co_1/2Ti_1/2)O₃ ceramics, incorporating additional CuO helps to render a dielectric material with a higher dielectric constant, a smaller τ_f value, and a 20% dielectric loss reduction, which makes it a very promising candidate for applications requiring low microwave dielectric loss.     

Effect of Excess PbO on the Sintering Characteristics and Dielectric Properties of Pb(Mg1/3Nb2/3)O3–PbTiO3-Based Ceramics

Additions of excess PbO to the perovskite Pb[(Mg_1/3Nb_2/3)_0.92Ti_0.08]O₃ solid solution enhanced the formation of a liquid phase at 840°C, which served as a densification aid for the ceramics. The liquid phase allowed elimination of pores and promoted grain growth during sintering. With additions of 1 to 2 wt% excess PbO, densities in excess of 97% of theoretical were obtained at a sintering temperature of 950°C. The peak dielectric constants of the resulting ceramics were over 18 000 at 30°C and dissipation factors less than 1%. Additions of PbO in excess of 2 wt% resulted in inferior dielectric properties due mainly to the dilution of the ferroelectric phase.     

Dielectric Properties of Ceramics in Ba (Co1/3 Nb2/3)O3–Ba(Zn1/3Nb2/3)O3 Solid Solution

The dielectric properties of the Ba (Co_1/3 Nb_2/3)O₃–Ba(Zn_1/3Nb_2/3)O₃ system were determined. Ba (Co_1/3 Nb_2/3)O₃–Ba(Zn_1/3Nb_2/3)O₃ has a complex perovskite structure, a high dielectric constant, a low dielectric loss, and a low temperature coefficient of the resonant frequency. A solid-solution ceramic with 0.7Ba (Co_1/3 Nb_2/3)O₃·0.3 Ba(Zn_1/3Nb_2/3)O₃ has a dielectric constant of K=33.5, Q=11000 at 6.5 GHz, and a temperature coefficient of the resonant frequency of τ_f=0 ppm/°C. The temperature coefficient of resonant frequency can be varied by changing the composition. The Q values of the ceramics can be increased by annealing in a nitrogen atmosphere. These ceramics can be used for resonant elements and stabilized oscillators.     

Ba(Zn1/3Ta2/3)O3 Ceramics with Low Dielectric Loss at Microwave Frequencies

The dielectric properties at microwave frequencies of Ba(Zn_1/3Ta_2/3)O₃ ceramics prepared by sintering were investigated. These ceramics had lower density but higher loss quality than ceramics hot-pressed at 1400°C. Loss quality was greatly improved by prolonged sintering. The Q of the ceramics measured by the dielectric resonator method was 14 000 at 12 GHz. The ceramics were investigated by X-ray diffraction analysis. It was found that Q improvement corresponds with increased Zn and Ta ordered structures in the ceramics.     

Preparation of Dense Lead Magnesium Niobate–Lead Titanate (Pb(Mg1/3Nb2/3)O3–PbTiO3) Ceramics by Spark Plasma Sintering

The effect of spark plasma sintering (SPS) on the densification behavior of Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ ceramics has been investigated. Specimens with a density of >99% of the theoretical density (TD) were obtained using SPS treatment at 900°C. Through normal sintering at 1200°C, however, the density of the specimen was only ∼92% of TD.     

Effect of Simultaneous Addition of BiFeO3 and Ba(Cu0.5W0.5)O3 on Lowering of Sintering Temperature of Pb(Zr,Ti)O3 Ceramics

Sintering of 0.5-wt%-MnO₂-added Pb(Zr_0.53Ti_0.47)O₃ ceramics progresses at 935°C for 50 min by the addition of complex oxides of perovskite-type crystal structure, BiFeO₃ and Ba(Cu_0.5W_0.5)O₃. In order to elucidate the low-temperature sintering mechanism of Pb(Zr,Ti)O₃ ceramics, the shrinkage and the evolution of the microstructure of a compacted body during heating were studied. It has been shown that the densification process was separated into the following three stages: the rearrangement of grains, the grain boundary diffusion of atoms, and then grain growth. Also, microstructural and elemental analyses of the ceramics revealed the existence of an amorphous phase at the grain boundaries predominantly composed of lead and copper oxides. Consequently, this process can be facilitated by the occurrence of a transient liquid phase corresponding to the above amorphous phase.     

Microwave Characteristics of (Pb,Ca)(Fe,Nb,Sn)O3 Dielectric Materials

The dielectric properties of (Pb_{1− x} Ca _x ){(Fe_1/2Nb_1/2)_{1– y} Sn _y }O₃ solid solutions, where 0.4 lessthan equal tox ≤ 0.6, y = 0.05, 0.1, have been investigated at microwave frequencies. The replacement of Fe³⁺/Nb⁵⁺ by Sn⁴⁺ at the B–site of the perov-skite structure considerably improves the loss quality factor Q and does not remarkably affect the dielectric constant epsilon_r and the temperature coefficient of resonant frequency tau_f. The tau_f value of nearly 0 ppm/°C can be realized for x= 0.55. New high-quality dielectric ceramics having epsilon_r of 85.3-89.9,Qf values of 7510-8600 GHz, and τ_f of 0-9 ppm/°C were obtained at 1150°C for 3 h sintering in air. The influence of the sintering atmosphere on dielectric properties was also investigated.     

Probing of 1:2 Ordering in Ba(Ni1/3Nb2/3)O3 and Ba(Zn1/3Nb2/3)O3 Ceramics by XRD and Raman Spectroscopy

The 1:2 ordering in Ba(Ni_1/3Nb_2/3)O ceramics sintered at 1350-1500°C has been investigated by using XRD and Raman spectroscopy. Both of the techniques show that the degree of the 1:2 ordering decreases as the sintering temperature increases. However, XRD discerns the 1:2 ordering only for the samples sintered at 1350-1400°C, whereas Raman spectroscopy discerns the 1:2 ordering for all the samples. Similar results have been obtained for Ba(Zn_1/3Nb_2/3)O₃ ceramics, where only the temperature range is slightly different. It is demonstrated that Raman spectroscopy can be a useful tool for probing of the 1:2 ordering in the A(B'^II_1/3B"^V_2/3)O₃-type complex perovskite compounds.     

Influence of Processing Conditions on the Electrical Properties of CaCu3Ti4O12 Ceramics

The electrical properties of a series of CaCu₃Ti₄O₁₂ ceramics prepared by the mixed oxide route and sintered at 1115°C in air for 1–24 h to produce different ceramic microstructures have been studied by Impedance Spectroscopy. As-fired ceramics are electrically heterogeneous, consisting of semiconducting grains and insulating grain boundaries, and can be modelled to a first approximation on an equivalent circuit based on two parallel RC elements connected in series. The grain boundary resistance and capacitance values vary as a function of sintering time and correlate with the ceramic microstructure based on the brickwork layer model for electroceramics. The large range of apparent high permittivity values for CaCu₃Ti₄O₁₂ ceramics is therefore attributed to variations in ceramic microstructure. The grain-boundary resistance decreases by three to four orders of magnitude after heat treatment in N₂ at 800°–1000°C but can be recovered to the original value by heat treatment in O₂ at 1000°C. The bulk resistivity decreases from ∼80 to 30 Ω·cm with increasing sintering time but is independent of heat treatment in N₂ or O₂ at 800°–1000°C. The origin of the bulk semiconductivity is discussed and appears to be related to partial decomposition of CaCu₃Ti₄O₁₂ at the high sintering temperatures required to form dense ceramics, and not to oxygen loss.     

Microstructure, Density, and Dielectric Properties of Lead-Free (K0.44Na0.52Li0.04)(Nb0.96−xTaxSb0.04)O3 Piezoelectric Ceramics

Lead-free (K_0.44Na_0.52Li_0.04) (Nb_0.96−xTa_xSb_0.04)O₃ piezoelectric ceramics were prepared by the conventional solid-state sintering method. The grain growth of the ceramics was inhibited and the relative density was improved with Ta substituting for Nb. Increasing x led to different variations of dielectric properties before and after poling, and prevented the occurrence of orthorhombic–tetragonal phase transition (at T _{o − t} ). All the ceramics show an intermediate relaxor-like behavior between normal and ideal relaxor ferroelectrics. Significantly enhanced dielectric and piezoelectric properties were obtained in the ceramics with x =0.20. The ceramics are very promising lead-free materials for electromechanical device applications.     

Atomic Resolution Transmission Electron Microscopy of the Microstructure of Ordered Ba(Cd1/3Ta2/3)O3 Perovskite Ceramics

Microstructures of ordered Ba(Cd_1/3Ta_2/3)O₃ perovskite dielectric ceramics with and without a boron additive have been observed by atomic resolution transmission electron microscopy (TEM). The selected area electron diffraction and lattice image show a well-ordered structure with hexagonal symmetry (lattice constants of a ∼5.8 Å and c ∼7.1 Å) in the ordered Ba(Cd_1/3Ta_2/3)O₃ with a boron additive, which is similar to those in ordered Ba(Zn_1/3Ta_2/3)O₃ and Ba(Mg_1/3Ta_2/3)O₃ ceramics. Ordered domains with a twin crystallographic relationship and high-density domain interfaces induced by ordering were observed in the ordered Ba(Cd_1/3Ta_2/3)O₃ without a boron additive sintered at a relatively high temperature. Atomic resolution TEM further revealed the conservative twin boundaries along (001) and (110) planes and non-conservative antiphase boundaries with a projected displacement vector of the type [001] in the ordered Ba(Cd_1/3Ta_2/3)O₃ without a boron additive. Finally, the energetics of different domain interfaces are discussed with the interfacial structures in ordered Ba(Cd_1/3Ta_2/3)O₃ ceramics revealed by an electron microscope.     

Effects of La2O3 Addition and PbO Excess on the Transmittance of PbZrO3–PbTiO3–Pb(Zn1/3Nb2/3)O3 Ceramics by Spark Plasma Sintering

The effects of La₂O₃ addition and PbO excess on the microstructures and optical properties of PbZrO₃–PbTiO₃–Pb(Zn_1/3Nb_2/3)O₃ (PZ–PT–PZN) ceramics prepared by spark plasma sintering were investigated. When 1 mol% La₂O₃ was added, the highest transmittance of 35% at 700 nm for PZ–PT–PZN ceramics was obtained. The improved transmittance was attributed to the increased relative density and the decreased optical anisotropy. The samples containing more than 1 mol% La₂O₃ showed decreased transmittance, due to the appearance of secondary phases. The transmittance of PZ–PT–PZN ceramics increased slightly to 29% at 700 nm with increasing amount of excess PbO up to 10 mol% and thereafter decreased rapidly.     

Dielectric Characteristics of Nd(Zn1/2Ti1/2)O3 Ceramics at Microwave Frequencies

The microwave dielectric properties and the microstructures of Nd(Zn_1/2Ti_1/2)O₃ (NZT) ceramics prepared by the conventional solid-state route have been studied. The prepared NZT exhibited a mixture of Zn and Ti showing 1:1 order in the B-site. The dielectric constant values (ɛ_r) saturated at 29.1–31.6. The quality factor ( Q × f ) values of 56 700–170 000 (at 8.5 GHz) can be obtained when the sintering temperatures are in the range of 1300°–1420°C. The temperature coefficient of resonant frequency τ_f was not sensitive to the sintering temperature. The ɛ _r value of 31.6, the Q × f value of 170 000 (at 8.5 GHz), and the τ_f value of −42 ppm/°C were obtained for NZT ceramics sintering at 1330°C for 4 h. For applications of high selective microwave ceramic resonators, filters, and antennas, NZT is proposed as a suitable material candidate.     

Dielectric Properties of the "Twinned" 8H-Hexagonal Perovskite Ba8Nb4Ti3O24

The dielectric properties of dense ceramics of the "twinned" 8H-hexagonal perovskite Ba₈Nb₄Ti₃O₂₄ are reported. Single-phase powders were obtained from the mixed-oxide route at 1325°C and ceramics (>92% of the theoretical X-ray density) by sintering in air or flowing O₂ at 1400°–1450°C. The ceramics are dc insulators with a band gap >3.4 eV that resonate at microwave frequencies with relative permittivity, ɛ_r∼44–48, quality factor, Q × f _r∼21 000–23 500 GHz (at f _r∼5.5 GHz) and temperature coefficient of resonant frequency, TC _f,∼+115 ppm/K.