Growth of graphene and graphite nanocrystals from a molten phase

We report on the development of a new technique for the growth of graphene and graphite nanocrystals from a metal–carbon melt. The process involves dissolving carbon inside molten nickel or copper at a specified temperature and then allowing the dissolved carbon to nucleate and grow on top of the melt at a lower temperature. The morphology of graphite forming inside nickel is shown to depend on the melt composition and cooling rate. The results indicate that the graphene layers contain a wrinkled structure due to thermal expansion coefficient mismatch between the grown layers and substrate. The graphene layers, however, preserve their continuity over these wrinkles. Although the formation of wrinkles was found not to depend on the type of metal substrate, the substrate had strong effect on the quality of grown layers. The films on copper contained quite a few defects including cracks and entrapped vacancies, whereas the films grown on nickel were pristine and defects free.     

Weak mismatch epitaxy and structural Feedback in graphene growth on copper foil

Graphene growth by low-pressure chemical vapor deposition on low cost copper foils shows great promise for large scale applications. It is known that the local crystallography of the foil influences the graphene growth rate. Here we find an epitaxial relationship between graphene and copper foil. Interfacial restructuring between graphene and copper drives the formation of (n10) facets on what is otherwise a mostly Cu(100) surface, and the facets in turn influence the graphene orientations from the onset of growth. Angle resolved photoemission shows that the electronic structure of the graphene is decoupled from the copper indicating a weak interaction between them. Despite this, two preferred orientations of graphene are found, ±8° from the Cu[010] direction, creating a non-uniform distribution of graphene grain boundary misorientation angles. Comparison with the model system of graphene growth on single crystal Cu(110) indicates that this orientational alignment is due to mismatch epitaxy. Despite the differences in symmetry the orientation of the graphene is defined by that of the copper. We expect these observations to not only have importance for controlling and understanding the growth process for graphene on copper, but also to have wider implications for the growth of two-dimensional materials on low cost metal substrates.      

An Atomistic Tomographic Study of Oxygen and Hydrogen Atoms and their Molecules in CVD Grown Graphene

The properties and growth processes of graphene are greatly influenced by the elemental distributions of impurity atoms and their functional groups within or on the hexagonal carbon lattice. Oxygen and hydrogen atoms and their functional molecules (OH, CO, and CO₂) positions' and chemical identities are tomographically mapped in three dimensions in a graphene monolayer film grown on a copper substrate, at the atomic part‐per‐million (atomic ppm) detection level, employing laser assisted atom‐probe tomography. The atomistic plan and cross‐sectional views of graphene indicate that oxygen, hydrogen, and their co‐functionalities, OH, CO, and CO₂, which are locally clustered under or within the graphene lattice. The experimental 3D atomistic portrait of the chemistry is combined with computational density‐functional theory (DFT) calculations to enhance the understanding of the surface state of graphene, the positions of the chemical functional groups, their interactions with the underlying Cu substrate, and their influences on the growth of graphene.     

One‐Step Formation of a Single Atomic‐Layer Transistor by the Selective Fluorination of a Graphene Film

In this study, the scalable and one‐step fabrication of single atomic‐layer transistors is demonstrated by the selective fluorination of graphene using a low‐damage CF₄ plasma treatment, where the generated F‐radicals preferentially fluorinated the graphene at low temperature (<200 °C) while defect formation was suppressed by screening out the effect of ion damage. The chemical structure of the C–F bonds is well correlated with their optical and electrical properties in fluorinated graphene, as determined by X‐ray photoelectron spectroscopy, Raman spectroscopy, and optical and electrical characterizations. The electrical conductivity of the resultant fluorinated graphene (F‐graphene) was demonstrated to be in the range between 1.6 kΩ/sq and 1 MΩ/sq by adjusting the stoichiometric ratio of C/F in the range between 27.4 and 5.6, respectively. Moreover, a unique heterojunction structure of semi‐metal/semiconductor/insulator can be directly formed in a single layer of graphene using a one‐step fluorination process by introducing a Au thin‐film as a buffer layer. With this heterojunction structure, it would be possible to fabricate transistors in a single graphene film via a one‐step fluorination process, in which pristine graphene, partial F‐graphene, and highly F‐graphene serve as the source/drain contacts, the channel, and the channel isolation in a transistor, respectively. The demonstrated graphene transistor exhibits an on‐off ratio above 10, which is 3‐fold higher than that of devices made from pristine graphene. This efficient transistor fabrication method produces electrical heterojunctions of graphene over a large area and with selective patterning, providing the potential for the integration of electronics down to the single atomic‐layer scale.     

Anisotropic Strain Relaxation of Graphene by Corrugation on Copper Crystal Surfaces

Corrugation is a ubiquitous phenomenon for graphene grown on metal substrates by chemical vapor deposition, which greatly affects the electrical, mechanical, and chemical properties. Recent years have witnessed great progress in controlled growth of large graphene single crystals; however, the issue of surface roughness is far from being addressed. Here, the corrugation at the interface of copper (Cu) and graphene, including Cu step bunches (CuSB) and graphene wrinkles, are investigated and ascribed to the anisotropic strain relaxation. It is found that the corrugation is strongly dependent on Cu crystallographic orientations, specifically, the packed density and anisotropic atomic configuration. Dense Cu step bunches are prone to form on loose packed faces due to the instability of surface dynamics. On an anisotropic Cu crystal surface, Cu step bunches and graphene wrinkles are formed in two perpendicular directions to release the anisotropic interfacial stress, as revealed by morphology imaging and vibrational analysis. Cu(111) is a suitable crystal face for growth of ultraflat graphene with roughness as low as 0.20 nm. It is believed the findings will contribute to clarifying the interplay between graphene and Cu crystal faces, and reducing surface roughness of graphene by engineering the crystallographic orientation of Cu substrates.     

Unconventional Atomic Structure of Graphene Sheets on Solid Substrates

The atomic structure of free‐standing graphene comprises flat hexagonal rings with a 2.5 Å period, which is conventionally considered the only atomic period and determines the unique properties of graphene. Here, an unexpected highly ordered orthorhombic structure of graphene is directly observed with a lattice constant of ≈5 Å, spontaneously formed on various substrates. First‐principles computations show that this unconventional structure can be attributed to the dipole between the graphene surface and substrates, which produces an interfacial electric field and induces atomic rearrangement on the graphene surface. Further, the formation of the orthorhombic structure can be controlled by an artificially generated interfacial electric field. Importantly, the 5 Å crystal can be manipulated and transformed in a continuous and reversible manner. Notably, the orthorhombic lattice can control the epitaxial self‐assembly of amyloids. The findings reveal new insights about the atomic structure of graphene, and open up new avenues to manipulate graphene lattices.     

Effect of anchor and functional groups in functionalized graphene devices

The electrical properties of chemically derived graphene and graphene grown by chemical vapor deposition (CVD), until now, have been inferior to those of mechanically exfoliated graphene. However, because graphene is easier to produce in large quantities through CVD or growth from solid carbon sources, it has a higher potential for use in future electronics applications. Generally, modifications to the pristine lattice structure of graphene tend to adversely affect the electrical properties by shifting the doping level and changing the conductivity and the mobility. Here we show that a small degree of graphene surface functionalization, using diazonium salts with electron-withdrawing and electron-donating functional groups, is sufficient to predominantly induce p-type doping, undiminished mobility, and higher conductivity at the neutrality point. Molecules without a diazonium anchor group desorb easily and do not have a significant effect on the electronic properties of graphene devices. We further demonstrate the variability between identically fabricated pristine devices, thereby underscoring the caution needed when characterizing graphene device behaviors lest conclusions be drawn based on singular extremes.      

Synthesis of S-doped graphene by liquid precursor

Doping is a common and effective approach to tailor semiconductor properties. Here, we demonstrate the growth of large-area sulfur (S)-doped graphene sheets on copper substrate via the chemical vapor deposition technique by using liquid organics (hexane in the presence of S) as the precursor. We found that S could be doped into graphene's lattice and mainly formed linear nanodomains, which was proved by elemental analysis, high resolution transmission microscopy and Raman spectra. Measurements on S-doped graphene field-effect transistors (G-FETs) revealed that S-doped graphene exhibited lower conductivity and distinctive p-type semiconductor properties compared with those of pristine graphene. Our approach has produced a new member in the family of graphene based materials and is promising for producing graphene based devices for multiple applications.     

N-containing functional groups induced superior cytocompatible and hemocompatible graphene by NH2 ion implantation

Graphene is functionalized with amine by NH₂ ion implantation at room temperature in vacuum. The reaction is featured by nucleophilic substitution of C–O groups by the ammonia radicals. The presence of N-containing functional groups in graphene is identified by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. N element was successfully introduced to graphene, the atomic ratio of N to C rose to 3.12 %. NH₂ ion implanted graphene (G-NH₂) is a better hydrophilic material than pristine grahene according to the contact angle experiment. Mouse fibroblast cells and human endothelial cells cultured on G-NH₂ displayed superior cell-viability, proliferation and stretching over that on pristine graphene. Platelet adhesion, hemolysis and Kinetic-clotting time were measured on G-NH₂, showing excellent anticoagulation, with as good hemolysis as pristine graphene.     

采用水基原子层沉积工艺在石墨烯上沉积Al2O3介质薄膜研究

采用水基原子层沉积(H2O-based ALD)方法在石墨烯上直接生长Al2O3介质薄膜,研究了Al2O3成核机理.原子力显微镜(AFM)对Al2O3薄膜微观形态分析表明,沉积温度决定着Al2O3在石墨烯表面的成核生长情况,物理吸附在石墨烯表面的水分子是Al2O3成核的关键,物理吸附水分子的均匀性直接影响Al2O3薄膜的均匀性.在适当的温度窗口(100～130℃),Al2O3可以均匀沉积在石墨烯上,AFM测得Al2O3薄膜表面均方根粗糙度(RMS)为0.26 nm,X射线光电子能谱(XPS)表面分析与元素深度剖析表明,120℃下在石墨烯表面沉积的Al2O3薄膜中O和Al元素的含量比约为1.5.拉曼光谱分析表明,采用H2O-based ALD工艺沉积栅介质薄膜不会降低石墨烯晶体质量.     

Controllable Growth of Graphene on Liquid Surfaces

Controllable fabrication of graphene is necessary for its practical application. Chemical vapor deposition (CVD) approaches based on solid metal substrates with morphology‐rich surfaces, such as copper (Cu) and nickel (Ni), suffer from the drawbacks of inhomogeneous nucleation and uncontrollable carbon precipitation. Liquid substrates offer a quasiatomically smooth surface, which enables the growth of uniform graphene layers. The fast surface diffusion rates also lead to unique growth and etching kinetics for achieving graphene grains with novel morphologies. The rheological surface endows the graphene grains with self‐adjusted rotation, alignment, and movement that are driven by specific interactions. The intermediary‐free transfer or the direct growth of graphene on insulated substrates is demonstrated using liquid metals. Here, the controllable growth process of graphene on a liquid surface to promote the development of attractive liquid CVD strategies is in focus. The exciting progress in controlled growth, etching, self‐assembly, and delivery of graphene on a liquid surface is presented and discussed in depth. In addition, prospects and further developments in these exciting fields of graphene growth on a liquid surface are discussed.     

Influence of copper morphology in forming nucleation seeds for graphene growth

We report that highly crystalline graphene can be obtained from well-controlled surface morphology of the copper substrate. Flat copper surface was prepared by using a chemical mechanical polishing method. At early growth stage, the density of graphene nucleation seeds from polished Cu film was much lower and the domain sizes of graphene flakes were larger than those from unpolished Cu film. At later growth stage, these domains were stitched together to form monolayer graphene, where the orientation of each domain crystal was unexpectedly not much different from each other. We also found that grain boundaries and intentionally formed scratched area play an important role for nucleation seeds. Although the best monolayer graphene was grown from polished Cu with a low sheet resistance of 260 Ω/sq, a small portion of multilayers were also formed near the impurity particles or locally protruded parts.     

Wetting‐Induced Climbing for Transferring Interfacially Assembled Large‐Area Ultrathin Pristine Graphene Film

Owing to inherent 2D structure, marvelous mechanical, electrical, and thermal properties, graphene has great potential as a macroscopic thin film for surface coating, composite, flexible electrode, and sensor. Nevertheless, the production of large‐area graphene‐based thin film from pristine graphene dispersion is severely impeded by its poor solution processability. In this study, a robust wetting‐induced climbing strategy is reported for transferring the interfacially assembled large‐area ultrathin pristine graphene film. This strategy can quickly convert solvent‐exfoliated pristine graphene dispersion into ultrathin graphene film on various substrates with different materials (glass, metal, plastics, and cloth), shapes (film, fiber, and bulk), and hydrophobic/hydrophilic patterns. It is also applicable to nanoparticles, nanofibers, and other exfoliated 2D nanomaterials for fabricating large‐area ultrathin films. Alternate climbing of different ultrathin nanomaterial films allows a layer‐by‐layer transfer, forming a well‐ordered layered composite film with the integration of multiple pristine nanomaterials at nanometer scale. This powerful strategy would greatly promote the development of solvent‐exfoliated pristine nanomaterials from dispersions to macroscopic thin film materials.     

石墨烯增强铜基复合材料的研究进展

石墨烯具有超高的比表面积和优异的力学性能, 是铜基复合材料理想的增强体。传统的粉末冶金工艺很难解决石墨烯在铜基体中的分散问题, 以及石墨烯与铜基体结合性差的难题。随着近些年研究者对石墨烯-铜界面问题深入的探索, 一些新的制备工艺不断出现。本文系统地介绍和对比了近几年石墨烯增强铜基复合材料的制备工艺, 概述了关于石墨烯/铜复合材料力学性能的研究进展, 总结了石墨烯增强铜基复合材料力学性能的机理, 并对未来石墨烯增强铜基复合材料的研究重点进行了展望。     

Understanding Defect‐Stabilized Noncovalent Functionalization of Graphene

The noncovalent functionalization of graphene by small molecule aromatic adsorbates, phenanthrenequinone (PQ), is investigated systematically by combining electrochemical characterization, high‐resolution interfacial X‐ray scattering, and ab initio density functional theory calculations. The findings in this study reveal that while PQ deposited on pristine graphene is unstable to electrochemical cycling, the prior introduction of defects and oxygen functionality (hydroxyl and epoxide groups) to the basal plane by exposure to atomic radicals (i.e., oxygen plasma) effectively stabilizes its noncovalent functionalization by PQ adsorption. The structure of adsorbed PQ molecules resembles the graphene layer stacking and is further stabilized by hydrogen bonding with terminal hydroxyl groups that form at defect sites within the graphene basal plane. The stabilized PQ/graphene interface demonstrates persistent redox activity associated with proton‐coupled‐electron‐transfer reactions. The resultant PQ adsorbed structure is essentially independent of electrochemical potentials. These results highlight a facile approach to enhance functionalities of the otherwise chemically inert graphene using noncovalent interactions.     

Formation of bilayer bernal graphene: layer-by-layer epitaxy via chemical vapor deposition

We report the epitaxial formation of bilayer Bernal graphene on copper foil via chemical vapor deposition. The self-limit effect of graphene growth on copper is broken through the introduction of a second growth process. The coverage of bilayer regions with Bernal stacking can be as high as 67% before further optimization. Facilitated with the transfer process to silicon/silicon oxide substrates, dual-gated graphene transistors of the as-grown bilayer Bernal graphene were fabricated, showing typical tunable transfer characteristics under varying gate voltages. The high-yield layer-by-layer epitaxy scheme will not only make this material easily accessible but reveal the fundamental mechanism of graphene growth on copper.     

Growth of few layer graphene from commercial C2 hydrocarbons at low temperature and controlled surface functionalization

Graphene is mostly grown from methane on copper foils at a high temperature about 1000°C. In this research, a commercial ethylene-acetylene-ethane mixture was used as a clean precursor for graphene synthesis on nickel foils in a chemical vapor deposition reactor at 750°C. Furthermore, controlled functionalization of graphene sheets was achieved via hydrothermal oxidation at moderate pressure and temperature using nitric acid. Broadened 2D band and G band frequencies in Raman spectra indicated that pristine graphene (PG) was of high quality with low defects. X-ray diffraction results confirmed that PG has five layers. Transmission electron microscopy and N₂ adsorption-desorption analyses affirmed that the graphene is of a good quality, large surface area (562 m²/g) and small pore size. Fourier transform infrared spectroscopy confirmed functionalization process performance. Thermogravimetric analysis affirmed that the thermal stability of PG was drastically decreased after the functionalization process.     

Tailored Crumpling and Unfolding of Spray‐Dried Pristine Graphene and Graphene Oxide Sheets

For the first time, pristine graphene can be controllably crumpled and unfolded. The mechanism for graphene is radically different than that observed for graphene oxide; a multifaced crumpled, dimpled particle morphology is seen for pristine graphene in contrast to the wrinkled, compressed surface of graphene oxide particles, showing that surface chemistry dictates nanosheet interactions during the crumpling process. The process demonstrated here utilizes a spray‐drying technique to produce droplets of aqueous graphene dispersions and induce crumpling through rapid droplet evaporation. For the first time, the gradual dimensional transition of 2D graphene nanosheets to a 3D crumpled morphology in droplets is directly observed; this is imaged by a novel sample collection device inside the spray dryer itself. The degree of folding can be tailored by altering the capillary forces on the dispersed sheets during evaporation. It is also shown that the morphology of redispersed crumpled graphene powder can be controlled by solvent selection. This process is scalable, with the ability to rapidly process graphene dispersions into powders suitable for a variety of engineering applications.     

Ultrathin Metal Crystals: Growth on Supported Graphene Surfaces and Applications

Controlled nucleation and growth of metal clusters in metal deposition processes is a long‐standing issue for thin‐film‐based electronic devices. When metal atoms are deposited on solid surfaces, unintended defects sites always lead to a heterogeneous nucleation, resulting in a spatially nonuniform nucleation with irregular growth rates for individual nuclei, resulting in a rough film that requires a thicker film to be deposited to reach the percolation threshold. In the present study, it is shown that substrate‐supported graphene promotes the lateral 2D growth of metal atoms on the graphene. Transmission electron microscopy reveals that 2D metallic single crystals are grown epitaxially on supported graphene surfaces while a pristine graphene layer hardly yields any metal nucleation. A surface energy barrier calculation based on density functional theory predicts a suppression of diffusion of metal atoms on electronically perturbed graphene (supported graphene). 2D single Au crystals grown on supported graphene surfaces exhibit unusual near‐infrared plasmonic resonance, and the unique 2D growth of metal crystals and self‐healing nature of graphene lead to the formation of ultrathin, semitransparent, and biodegradable metallic thin films that could be utilized in various biomedical applications.