ASN.1编解码运行库系统的研究和设计

ASN.1语言在各种领域有着广泛的应用。它是一种用来描述结构化信息的标记语言,主要用于为在不同计算机系统、应用程序以及网络之间传递和交换的信息定义协议标准。本文详细介绍了传统ASN.1应用系统的运行过程和其主要的弊端,在这个背景下提出了通用ASN.1编解码运行库系统,并把传统的运行库划分为ASN.1的PER编解码系统和ASN.1的PER运行库系统,提出本软件的优势和应用前景。     

ASN.1编解码模块在LTE协议栈中的研究与应用

ASN.1能实现异构系统之间的信息交换,用它描述的信息独立于任何应用环境,开发LTE协议栈软件必须设计并实现针对RRC消息的ASN.1编解码模块。通过分析ASN.1类型及其编码规则,结合LTE协议栈软件需求,提出了应用于LTE协议栈软件的ASN.1编解码模块的设计方法,该方法采用模块化设计。通过对编解码模块的测试,证明了它对LTE协议栈中RRC消息的编解码功能。该方法具有实际应用价值和推广价值。     

WCDMA系统接口信令消息的描述与实现

WCDMA作为第三代移动通信系统的主流标准，能够提供多种类型的多媒体服务。为了实现各种用户平面数据的传输，系统会提前通过控制平面对所需的无线资源进行分配。由于配置过程是通过接口之间发送控制平面应用协议消息来实现的，因此能否正确有效地对信令消息进行编解码成为保证系统稳定工作的关键因素。3GPP标准中，ASN．1语言被用来描述接口信令消息。首先简要介绍了WCDMA系统结构以及主要接口协议，重点描述了ASN．1存在的意义及其编解码规则，最后给出了基于ASN．1的开发环境下应用层网络协议的开发流程。     

H．323消息编解码的研究与实现

本研究了H．323协议集消息的编解码，ASN．1的PER规则，并提出了一种H．323消息编解码的实现方法。     

LTE-Uu接口协议栈中ASN.1模块的设计与应用

基于ASN.1及其UPER编码规则的理论,提出了LTE-Uu接口协议栈中ASN.1编解码模块的设计与应用方案.设计过程首先包含完整编译码所需信息的数据结构,并通过调用独立的编解码函数库,从数据结构中提取相应的参数完成解析.通过检验ASN.1编解码模块在协议一致性测试中的应用,该模块能够达到3GPP协议实际测试的要求.     

基于SUPL状态机的AGPS终端的软件实现

抽象语法标记(ASN.1)广泛应用于数据通信领域.AGPS技术中的SUPL协议即采用了ASN.1中的压缩编码规则(PER)进行消息、数据的编解码.文章分析了SUPL协议中各种消息及数据的ASN.1描述和PER编码规则接口,并在此基础上介绍了一种基于PDA操作系统平台,以状态机为核心的SUPL协议客户端的软件实现.     

一种改进的通用ASN.1协议编解码方法

针对开源ASN1C采用动态内存分配方法处理ASN.1协议消息的可选参数,导致编解码软件由于频繁分配和释放内存操作而带来的问题提出了一种改进的方法,避免了ASN.1结构类型编解码中的动态内存分配,减少了整个协议编解码软件进行内存分配和释放操作的频度.测试和实际工程运行结果表明,改进的方法提高了编解码软件的可用性、执行效率和健壮性.     

Iuh协议栈编解码器的设计与实现

无线通信网中信令消息一般都采用ASN.1编码,以实现不同厂商设备之间大量的、复杂的信息交换和传递。首先简述了Iuh协议栈结构,ASN.1基本知识,并结合无线接入网络应用部份（RANAP）消息结构特点讲解了如何使用开源ASN.1编译器ASN1C进行Iuh协议栈编解码器的设计和实现,避免了使用商用编译器的巨大资金支出。最后介绍了一种使用OSS ASN.1 Tools构造测试用例对编解码结果进行验证的方法,该方法解决了手动填充协议数据结构繁琐、易出错的工作,而且为以后自动化测试提供了空间。     

ASN．1解码器的设计与实现及其在3G中的应用

文章首先解析了ASN．1协议的语法和特点,然后针对BER编解码进行了深入探讨,并提出了基于BER编码结构的解码器设计思路,最后给出73G中ASN．1BER编码方式话单解码器的应用示例。     

CSTA协议分析及实现技术

介绍了CSTA（计算机支持的电信应用）协议的网络模型、协议结构、执行机理和控制流程，以及用来描述协议的ASN.1（抽象语法描述1）语法和BER（基本编码规则），并在此基础上分析了CSTA与智能网（IN）的异同，着重说明了CSTA协议的具体实现技术，编码器和解码器的设计方法。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.