含硼、磷添加剂对电沉积CoNiFe软磁薄膜的影响(英文)

采用循环伏安法制备CoNiFe、CoNiFeB和CoNiFeP软磁薄膜。采用SEM、EDS和XRD进行薄膜形貌、成分及相组成分析,应用振动样品磁强计(VSM)测量其软磁性能,并采用电化学阻抗谱(EIS)及极化曲线研究其腐蚀阻力。结果表明,电沉积CoNiFe、CoNiFeB和CoNiFeP软磁薄膜为晶态和非晶态混合体,含硼、磷添加剂可促进非晶相的形成;CoNiFe和CoNiFeB具有纳米结构;含硼添加剂可提高薄膜的致密度和阻力,并使矫顽力从851.48A/m降低至604.79A/m,而磁饱和强度基本不变。含磷添加剂可增加薄膜粒子的尺寸并降低其耐蚀性,并使CoNiFeP薄膜的矫顽力增加至12485.79A/m,磁饱和强度大幅度降低至1.25T。     

Preparation and characterization of epitxial Co-alloy magnetic thin films on oxide single-crystal substrates

Co-alloy single-crystal thin films were prepared on SrTiO₃(1 1 1), LaAlO₃(0 0 0 1), and Al₂O₃(0 0 0 1) substrates. The film structure was studied using X-ray diffraction and high-resolution transmission electron microscopy. It is shown that epitaxial growth of a CoCrPt magnetic layer strongly depends on the substrate and underlayer materials.     

纳米Fe-ZnSe颗粒膜的结构与磁性

采用射频溅射法制备了纳米铁磁金属-半导体基体Fe0.35(ZnSe)0.65颗粒膜,并研究了其结构和磁特性.根据颗粒膜低场磁化率x(T)温度关系和不同温度下的磁滞回线,证实了在一定的温度范围内,颗粒膜中的纳米铁颗粒表现出磁性弛豫效应.当截止温度TB=50 K时.颗粒膜的磁性由超顺磁性转变为铁磁性.在截止温度以上,其饱和磁化强度Ms(T)温度关系符合Bloch的自旋波T3/2定律,探讨分析了自旋波常数增大的原因.     

磁控溅射制备In2O3-SnO2薄膜与分析

选择In2LO3与SnO2质量比11的靶材为溅射源,采用磁控溅射法沉积了ITO薄膜,讨论了溅射氩气压强、氧流量、基体温度对薄膜透射率和方阻的影响,深入分析了其机理.研究结果表明溅射时采用低Ar压强更有利于降低ITO薄膜的电阻率,并确定最佳氩气压强为0.2 Pa,厚度为120 nm的ITO薄膜在可见光区的透过率可达到90%;氧流量能明显改变薄膜的性能,随着氧流量从0增加10 L/min(标准状态下,下同),载流子浓度(N)则由3.2×1020降低到1.2×1019/cm3,N值的变化与ITO薄膜光学禁带宽度(Eg)的变化密切相关.振子模型与实验结果吻合,并确定了ITO薄膜的等离子波长(λp=1 510 nm).薄膜随方阻减小表现出明显的"B-M"效应.通过线性外推,建立了直接跃迁的(αE)2模型,并确定了薄膜的Eg值(3.5～3.86 eV).     

磁控溅射氧化钒薄膜的相组成及性能

采用反应磁控溅射法在玻璃基底上沉积氧化钒薄膜,分别利用X射线衍射(XRD)、原子力显微镜(AFM)和红外光谱仪分析样品的物相、表面形貌和红外光透过率。结果表明:氧气体积分数低于15%时,薄膜为低价钒氧化物,高于20%时薄膜为V2O5;氧气体积分数等于15%时,溅射功率由150W增加到200W,薄膜中钒的价态变低;当溅射功率为250W时,薄膜物相变成VO2。随着沉积时间从30min增加到60min,原子力显微分析显示VO2颗粒尺寸从约200nm增加到400nm;红外光透过率范围从55%～65%减小到45%～55%。     

Magnetic property and recording performance of chemical deposition CoP thin films

The thickness of CoP thin films prepared by wet chemical deposition is of crucial importance on magnetic property and recording perform-ance. The coercivity of CoP films decreased with increasing film thickness. The coercivity was 45.37 kA m 1 at the thickness of 300 nm, and decreased to 21.65 kA m 1 at 5.7 μm. Recording performance tests indicate that, for drums with the same size, different recorded magnetic pole density have different thickness requirements. For 40 mm diameter magnetic drum, the optimal ...     

纳米晶Fe-N-B软磁条带的制备

对非晶Fe92B8条带进行氮化、均匀化、水淬和时效处理,得到α″-Fe16N2相分布于非晶基体上的纳米晶Fe84.6N7.8B7.4条带。采用化学分析测试纳米晶条带中的氮含量,用X射线衍射(XRD)对相结构进行上分析。结果表明:制备的纳米晶Fe84.6N7.8B7.4条带中α″-Fe16N2相的平均晶粒尺寸和体积分数分别为18nm和54%;纳米晶Fe84.6N7.8B7.4条带的电阻率、饱和磁致伸缩率、饱和磁化强度、矫顽力、初始磁导率和弛豫频率分别为246μΩ·cm、2.52×10-6、2.35T、11.4A/m、9.1×104和4.1×104Hz,表明纳米晶Fe84.6N7.8B7.4条带是一种性能优良的软磁材料。     

Electrodeposition behavior of nanocrystalline CoNiFe soft magnetic thin film

1 Introduction Soft magnetic materials are a central component of electromagnetic devices such as step motors, magnetic sensors, transformers and magnetic recording heads. The electrodeposited CoNiFe alloy that possesses a very high saturation magnetic f…     

Preparation and properties of tungsten-doped indium oxide thin films

Tungsten-doped indium oxide (IWO) thin films were deposited on glass substrate by DC reactive magnetron sputtering. The effects of sputtering power and growth temperature on the structure, surface morphology, optical and electrical properties of IWO thin films were investigated. The thickness and surface morphology of the films are both closely dependent on the sputtering power and the substrate temperature. The transparency of the films decreases with the increase of the sputtering power but is not seriously influenced by substrate temperature. All the IWO thin film samples have high transmittance in near-infrared spectral range. With either the sputtering power or the growth temperature increases, the resistivity of the film decreases at the beginning and increases after the optimum parameters. The as-deposited IWO films with minimum resistivity of 6. 4× 10-4 Ω·cm were obtained at a growth temperature of 225 ℃ and sputtering power of 40 W, with carrier mobility of 33. 0 cm2· V-1·s-1 and carrier concentration of 2. 8× 1020 cm-3 and the average transmittance of about 81％ in near-infrared region and about 87％ in visible region.     

Nd-Fe-B薄膜的磁控溅射法制备与组织结构

对直流磁控溅射法制备Nd-Fe-B薄膜工艺进行了研究.在不同的溅射功率、溅射气压、溅射时间等条件下制备薄膜,并对薄膜进行了AFM、XRD分析.结果表明,Nd-Fe-B薄膜的沉积速率、表面形貌及相结构与溅射功率、溅射气压、溅射时间密切相关.薄膜的沉积速率随磁控溅射功率的增加而增加,薄膜表面晶粒尺寸和表面粗糙度随溅射功率增加而增大.沉积速率随溅射气压的升高先增大后减小.低功率溅射时,薄膜中出现α-Fe、Nd2Fe14B相相对较少,随溅射功率增加,α-Fe相消失,Nd2Fe14B相增多.综合考虑各种因素,最佳溅射功率为100～130 W.     

类金刚石/碳化钨多层膜的制备及其结构

采用阳极型气体离子源结合非平衡磁控溅射的方法,在单晶硅及Ti6Al4V钛合金基体上制备掺钨类金刚石多层膜(DLC/WC),利用俄歇电子谱(AES)、透射电镜(TEM)、X射线光电子能谱(XPS)及X射线衍射(XRD)等对膜层的过渡层、界面及微观结构进行研究。结果表明:所制备的膜层厚2.7μm,硬度高达3 550HV,摩擦因数为0.139,与Ti6Al4V基体结合力为52 N;W主要以纳米晶WC的形式与非晶DLC形成WC/DLC多层膜,该多层膜仍呈现出类金刚石膜的主要特征。     

Structural and magnetic properties of sputter deposited cobalt-silica nanocomposite thin films

The present study was focused to investigate the effect of Co concentration on structural and, magnetic properties of Co-SiO₂ nanocomposite thin films. Co-SiO₂ nanocomposite films with different cobalt atomic concentration up to 49 at% were synthesized using direct current (DC) and radiofrequency (RF) magnetron co-sputtering. TEM and XRD analyses reveal the formation of both FCC (1 1 1) and HCP (1 0 1) phases in all the samples. The particle size and surface roughness of these films is found to increase with increase in cobalt concentration. Magnetic measurements reveal that the embedded cobalt nanoparticles behave as superparamagnets when their size is ≤16 nm. The coercivity at 3 K decreases while value of blocking temperature increases with increase in the size of embedded Co nanoparticles.     

Preparation of CulnSe2 thin films by paste coating

Precursor pastes were obtained by milling Cu-In alloys and Se powders.CuInSe2 thin films were successfully prepared by precursor layers,which were coated using these pastes,and were annealed in a H2 atmosphere.The pastes were tested by laser particle diameter analyzer,simultaneous thermogravimetric and differential thermal analysis instruments (TG-DTA),and X-ray diffractometry (XRD).Selenized films were characterized by XRD,scanning electron microscopy (SEM),and energy dispersive spectroscopy (EDS).The results indicate that chalcopyrite CuInSe2 is formed at 180℃ and the crystallinity of this phase is improved as the temperature rises.All the CuInSe2 thin films,which were annealed at various temperatures,exhibit the preferred orientation along the (112) plane.The compression of precursor layers before selenization step is one oftbe most essential factors for the preparation of perfect CulnSe2 thin films.     

Preparation of double-sided biaxially textured magnesium oxide thin films

A high-efficiency system was designed as an improvement in conventional reel-to-reel system for ion beam-assisted deposition(IBAD) and homo-epitaxy of double-sided biaxially textured MgO thin films.This system enables Hastelloy tape to flip automatically and go through the deposition area twice in order to deposit MgO on its both sides.With this system,the output of doublesided IB AD-MgO is elevated to be 30 m·h^-1.A 30-m tapes with 10-nm-thick double-sided biaxially textured MgO thin ...     

Preparation of CuInSe2 thin films by paste coating

Precursor pastes were obtained by milling Cu-In alloys and Se powders. CuInSe2 thin films were successfully prepared by precursor layers, which were coated using these pastes, and were annealed in a H2 atmosphere. The pastes were tested by laser particle diameter analyzer, si- multaneous thermogravimetric and differential thermal analysis instruments (TG-DTA), and X-ray diffractometry (XRD). Selenized films were characterized by XRD, scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS). The results indicate that chal- copyrite CuInSe2 is formed at 180°C and the crystallinity of this phase is improved as the temperature rises. All the CuInSe2 thin films, which were annealed at various temperatures, exhibit the preferred orientation along the (112) plane. The compression of precursor layers before selenization step is one of the most essential factors for the preparation of perfect CuInSe2 thin films.     

Improvement of soft magnetic properties of CoFeSiB thin film by external magnetic field and Zr addition

Co₄₀Fe₁₇Si₃₂B₁₁ thin film (150 nm) was deposited by using an RF magnetron co-sputtering system on a Si (100) substrate. A self-designed substrate holder, including various hard magnets arranged around the substrates, was utilized so that various external magnetic fields could be applied to the Si substrates during the film deposition. By the effect of this deposition field, the applied field during the sample deposition, the squareness of the CoFeSiB thin film was significantly enhanced. From the angular analysis of the magnetic hysteresis curves from easy (parallel to external magnetic field) to hard (perpendicular to external magnetic field) direction of magnetization, it can be deduced that Co and Fe atoms were magnetically arranged to the easy magnetization axis by an external magnetic field which was induced during deposition. Also, the compositional cluster size of the CoFeSiB thin film was remarkably reduced by Zr addition, causing a decrease in the value of coercivity. These results suggest that apparent magnetic anisotropy was achieved, and the soft magnetic property of the CoFeSiB thin film was remarkably enhanced by the combination of the deposition field and Zr addition.     

Study of microstructure and magnetic properties of electrodeposited nanocrystalline CoFeNiCu thin films

In this study the nanocrystalline CoFeNiCu thin films were electrodeposited from baths containing sodium citrate as a complexing agent and pH of around 5. Electrodeposition conditions were changed in order to achieve optimum soft magnetic properties which are required for new generation magnetic head core. SEM, EDS, XRD and VSM were used for characterization of the deposited films. The SEM micrographs of the deposited films exhibited no micro-voids and more uniform surface morphology compared with films electroplated from conventional baths (with low pH and no additives). According to X-ray diffraction patterns, the films electroplated at current densities lower than 4 mA/cm² showed FCC (Cu) phase structure, and other films exhibited BCC (Fe) and/or FCC (Co) phases. Calculating grain size of the films by using Scherrer equation showed that all the coatings were nanocrystalline and double phase films had lower average grain size in comparison with single phase films. The VSM results demonstrated that the coercivity of the nanocrystalline films dramatically reduced with decreasing grain size and followed D⁶ law. However, grain size had no effect on the saturation magnetization, whereas the chemical composition significantly affected saturation magnetization of the films. The results also indicated that in order to obtain films with low coercivity and high saturation magnetization, the nickel and copper contents of the deposits must not exceed 12 and 5 at.%, respectively.     

Preparation and properties of CdS thin films grown by ILGAR method

CdS thin films were deposited by the ion layer gas reaction (ILGAR) method. Structural, chemical, topographical development as well as optical and electrical properties of as-deposited and annealed thin films were investigated by XRD,SEM, XPS, AFM and UV-VIS. The results showed that the thin films are uniform, compact and good in adhesion to the substrates, and the growth of the films is 2.8 nm/cycle. The evolution of structure undergoes from the cubic structure to the hexagonal one with a preferred orientation along the (002) plane after annealing at 673 K. An amount of C, O and C1 impudries can be reduced by increasing the drying temperature or by annealing in N2 atmosphere. It was found that the band gap of the CdS films shifts to higher wavelength after annealing or increasing film thickness. The electrical resistivity decreases with increasing annealing temperature and film thickness.     

Preparation and drug releasing property of magnetic chitosan-5-fluorouracil nano-particles

In order to synthesize the targeting drug carrier system, magnetic chitosan-5-fluorouracil nano-particles were prepared by using 5-fluorouracil (5-Fu) as model drug, Fe₃O₄ nano-particles as kernel, chitosan as enveloping material and glutaraldehyde as cross linking agent through ultrasonic technique. The morphology of the magnetic chitosan-5-Fu nano-particles was observed with a transmission electron microscope(TEM). The results showed that magnetic chitosan-5-Fu nano-particles were prepared in spherical structure with a size range of 50–60 nm. The delivering capacity and drug releasing properties of magnetic chitosan-5-Fu nano-particles were investigated by UV-vis spectrum analysis. The results showed that the loading capacity was 13.4% and the cumulative release percentage in the phosphate buffer (pH=7.2) solutions was 68% in 30 h. These data indicate that the wrapped drug of magnetic chitosan-5-Fu nano-particles was slowly-released. The magnetic response of magnetic chitosan-5-Fu nano-particles was studied by UV-vis spectrometer to detect the changes of solution absorbance. Without external magnetic field, the nano-particle deposition rate was slow. When being subjected to 8 mT magnetic field, the particle sedimentation rate was increased rapidly. The results showed that magnetic chitosan-5-Fu nano-particles have a magnetic stability and strong targeting characteristics.