PECVD的原理与故障分析

介绍了PECVD工艺的种类、工艺原理以及设备的基本结构;根据多年对设备的维护经验,分析了PECVD设备的常见原因,提出了处理措施;最后,分析总结了影响PECVD工艺质量的主要因素。     

MOCVD的原理与故障分析

介绍了MOCVD法的基本原理、生长步骤以及主要优缺点;并以某型号MOCVD设备为例,介绍了其主要结构组成,分析了影响MOCVD工艺的主要因素,结合维修经验总结了MOCVD的常见故障现象以及相应的解决方法 。     

磁控溅射镀膜的原理与故障分析

介绍了磁控溅射镀膜的种类及特点。以直流磁控溅射为例,介绍了其结构、原理,分析了影响磁控溅射工艺稳定性的因素。最后总结了磁控溅射镀膜工艺中常见的故障以及解决方法。     

热壁低压化学汽相淀积的安全性探讨

对于热壁低压化学汽相淀积(LPCVD)技术,安全性是不可缺少的一个重要方面。本文就热壁LPCVD技术中常用气体的化学性质和物理方法进行说明。只要操作人员充分理解其气体在使用过程中的危险性,并采取适当措施,LPCVD技术才是安全的。     

SiN介质薄膜内应力的实验研究

研究了低压化学气相淀积Sin(LPCVD)介质薄膜的内应力,采用XP-2型台阶仪测量了SiN介质薄膜的内应力,通过改变薄膜淀积时的工艺参数,观察了反应气体流量比、淀积温度、反应室压力等因素对SiN薄膜内应力的影响.讨论了应力产生的原因以及随工艺条件变化的机理,通过工艺条件的合理选择逐步优化工艺.     

LPCVD制备氮化硅薄膜工艺

氮化硅（摘要）薄膜具有许多优良特性,在半导体、微电子和MEMS领域应用广泛。本文简要介绍了利用CVD方法制备摘要薄膜以及Si3N4薄膜的特性,详细介绍了低压化学气相淀积（Low Pressure Chemical Vapor Deposition）LPCVD制备氮化硅的工艺。工艺制备中通过工艺参数的调整使批量生产的淀积膜的均匀性达到技术要求。     

CVD工艺尾气处理系统

本文就ＣＶＤ工艺尾气处理进行了详细的介绍，并着重对ＣＶＤ工艺尾气处理ＣＤＯ系统的反应机理、构造及使用进行了分析和讨论。     

激光诱导化学气相淀积初始过程的研究

分析了激光诱导化学气相淀积过程中激光对气体的激发机理，采用半经典近似的方法，推导出气体吸系数的数学表达式，以此为基础讨论了实验参量－激光强度、频率、气体压强对气体吸收过程的影响。     

SiC器件与电路的若干关键技术

SiC器件可以稳定工作于高温、高频、强辐射条件下的能力已经得到证实。在许多应用领域和系统中,SiC已经成为进一步提高性能的理想材料。但是,在SiC器件及其电路的数量按比例增长并被融入电子系统之前,晶体生长和器件制造等技术必须得到进一步的发展。文章报道了SiC技术的最新进展情况。     

LPCVD系统淀积多晶硅薄膜的发雾分析

叙述了采用LPCVD系统淀积多晶硅薄膜的机理,分析了在淀积多晶硅薄膜过程中引起发雾的因素,指出了保持LPCVD系统的洁净能有效消除在淀积多晶硅薄膜过程中出现的发雾现象.     

液态源可控蒸发输送系统

在太阳能电池、微电子等半导体工艺制程中,液态源以生产效率高、成膜特性好、气压小不易泄漏等优点,广泛应用于扩散、氧化、化学气相沉积等工艺。如:在太阳能电池PN结制程中,掺杂用的液态磷源、液态硼源,以及在湿氧氧化工艺中使用的蒸馏水;在光电子、微电子行业中,化学气相淀积设备(CVD)使用的HMDSO、TEOS、SiHCl3等。实验数据显示,这些液态源的输送对各种掺杂、氧化、淀积工艺的质量具有很大影响。对液态源输送的技术现状进行阐述,分析了现有技术的特性和缺点,并结合未来工艺对装备要求的趋势,在此基础上提出了一种液态源可控蒸发输送系统。     

变温LPCVD沉积氮化硅薄膜的均匀性优化

以低压化学气相沉积(LPCVD)热壁立式炉为实验平台,由二氯硅烷和氨通过LPCVD工艺合成氮化硅薄膜,利用降温成膜提高氮化硅薄膜的膜厚均匀度.基于气体碰撞理论建立了氮化硅薄膜沉积速率与反应气体浓度的关系式.分析比较了LPCVD炉内不同升温速率沉积氮化硅薄膜的表面性能.发现在变温沉积阶段,选择合适的降温速率是实现薄膜沉积...     

故障树分析法在RIE故障诊断中的应用

基于半导体刻蚀技术,对RIE(反应离子刻蚀)的技术原理和等离子启辉原理进行了阐述,概括介绍了故障树分析法,绘制了启辉故障的故障树,分析了造成该故障的各种原因,并根据维修经验介绍了APC(自动压力控制)故障和AMU(自动匹配网络)故障等一些典型因素的处理方法。     

The influence of rf induced bias on the properties of diamond-like carbon films prepared using ECR-CVD

The deposition of diamond-like carbon (DLC) films from a mixture of hydrogen and methane using the electron resonance chemical vapor deposition (ECR-CVD) method with radio-frequency (rf) bias is reported. The structural characteristics of the DLC films were characterized using Raman spectroscopy. The effects of the self-generated dc bias resulting from the rf power on the optical gap, Raman spectra, infrared (IR) absorption, and film hardness in depositions carried out at 7 and 15 mTorr process pressures were investigated. Under conditions of 100 W microwave power and for dc bias variation ranging from −10 to −200 V, there is evidence from Raman scattering analysis to show an increase in the DLC-like characteristic in films deposited at low dc bias at both process pressures. The variation of the D and G line peak position and intergrated intensity ratio (I_D/I_G) in the Raman spectra correlates well with the film hardness profile. There does not seem to be a relationship between the variation of the C-H absorption peak intensity in the IR spectra (bonded hydrogen content) and the optical gap, although films with the highest optical gap tend to show a relatively higher C-H absorption peak intensity in the IR spectra. Films deposited at high dc bias showed a reduction in the C-H infrared absorption, suggesting a reduction in the bonded hydrogen content.     

CVD金刚石薄膜的抗腐蚀性研究

用微波等离子体化学气相沉积法在硅衬底上生长了金刚石薄膜;通过扫描电子显微镜和喇曼散射光谱对其性质进行了表征,将生成的样品分别放在氢氧化钾,四乙基氢氧化铵以及氢氟酸,硝酸和冰到混合液中进行腐蚀研究,结果发现在氢氧化钾腐蚀液中,金刚石薄膜出现片状脱落现象,而在后两种腐蚀液中却表现出良好的抗腐蚀性。     

Atmospheric pressure chemical vapor deposition of blanket tungsten films on silicon substrates for integrated circuit applications

Atmospheric pressure chemical vapor deposition (APCVD) of tungsten films using WF₆/H₂ chemistry has been studied. A statistical design of experiments approach and a surface response methodology were used to determine the most important process parameters and to obtain the best quality film possible in the parameter range studied. It was found that the deposition rate depends strongly on WF₆ flow rate, temperature, and the interaction between hydrogen flow rate and temperature. The resistivity was found to have a strong dependence on WF₆ and H₂ flow rates and temperature. An activation energy of 0.4 eV was calculated for the reaction rate limited growth regime. Empirical equations for predicting the deposition rate and resistivity were obtained. The resistivity decreases with both increasing film thickness and grain size. The films grown in the studied process parameter range indicate that (110) is the preferred orientation for films deposited with low WF₆/H₂ flow rate ratios at all deposition temperatures (350–450°C), whereas, the (222) orientation dominates at high WF₆/H₂ flow ratios and high deposition temperatures. Also, the grain size is larger for (222) oriented films than for (110) oriented films. The results of this study suggest that high-quality, thin film tungsten can be deposited using APCVD.     

变频器的常见故障分析

本文阐述了变频器的常见故障，并针对常见故障提出了解决措施。