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《Reliability, IEEE Transactions on》2009,58(1):193-201
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A memory array reliability model is developed that can be applied to a wide range of memory organizations including random-access memories (RAM) and read-only memories (ROM). The model is particularly useful for computing the reliability of fault-tolerant memories that employ techniques such as hardware redundancy, error-correcting codes, and software error-correcting algorithms. The model accommodates the effect of faults masked by data. Reliability models that incorporate the array model are given for a simplex RAM, an N-modular-redundant RAM, a spared RAM, a single-error-correcting RAM, a multiple-error-correcting RAM, and a ROM. Reliability characteristics of these memories are compared. The results suggest that memories with error-correcting capability and spare bit-planes provide the best reliability. Memories with sparing at the array level are next best followed by NMR and simplex organizations. ROM reliability is shown to be more optimistic when masked faults are considered. 相似文献
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Han-Lin Li Chia-Lin Yang Hung-Wei Tseng 《Very Large Scale Integration (VLSI) Systems, IEEE Transactions on》2008,16(8):952-964
The traditional virtual memory system is designed for decades assuming a magnetic disk as the secondary storage. Recently, flash memory becomes a popular storage alternative for many portable devices with the continuing improvements on its capacity, reliability and much lower power consumption than mechanical hard drives. The characteristics of flash memory are quite different from a magnetic disk. Therefore, in this paper, we revisit virtual memory system design considering limitations imposed by flash memory. In particular, we focus on the energy efficient aspect since power is the first-order design consideration for embedded systems. Due to the write-once feature of flash memory, frequent writes incur frequent garbage collection thereby introducing significant energy overhead. Therefore, in this paper, we propose three methods to reduce writes to flash memory. The HotCache scheme adds an SRAM cache to buffer frequent writes. The subpaging technique partitions a page into subunits, and only dirty subpages are written to flash memory. The duplication-aware garbage collection method exploits data redundancy between the main memory and flash memory to reduce writes incurred by garbage collection. We also identify one type of data locality that is inherent in accesses to flash memory in the virtual memory system, intrapage locality. Intrapage locality needs to be carefully maintained for data allocation in flash memory. Destroying intrapage locality causes noticeable increases in energy consumption. Experimental results show that the average energy reduction of combined subpaging, HotCache, and duplication-aware garbage collection techniques is 42.2%. 相似文献
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针对大规模嵌入式存储器可测性设计技术——存储器内建自测试(MBIST)中的故障诊断问题,介绍了MBIST设计的扩展功能——存储器内建自诊断(MBISD)。在引入存储器内建自测试的基础上,详细分析了存储器内建自诊断模块根据输出故障信息自动分析器件失效原因、并对失效单元进行故障定位和识别的基本原理及其中的关键算法,并用一块SRAM的MBIST设计(采用Mentor公司的MBISTArchitect完成)中的MBISD具体实例进行了仿真验证。存储器内建自诊断的应用,大大提高了存储器的成品率。 相似文献
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《Microelectronics Reliability》2014,54(9-10):1988-1994
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单片机系统中大容量数据存储器的系统扩展 总被引:2,自引:0,他引:2
在单片机应用系统中,有一些特殊的应用场合需要大容量的数据存储器,文章根据作者实际使用的应用系统,介绍了一种大容量数据存储器的扩展方法,包括其硬件组成及软件处理方法。 相似文献
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用多种方法制作了Au凸点、Cu/Au凸点、Ni/Au凸点、Cu/Pb-Sn凸点及C4凸点微型Au凸点直径为10μm,间距30μm高度5~8μm,芯片上微凸点近1000个,还对各种不同的制作方法进行了研究,并对芯片凸点的可靠性进行了一定的考核,效果良好。文中给出一组试验芯片的Cu/Pb-Sn凸点可靠性考核数据:经125℃,1000h电老化,其接触电阻变化范围为0.1%~0.7%,经-55℃~+125 相似文献
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The necessary mathematical conditions are derived for maximizing system reliability for a given system weight or minimizing system weight for a given reliability. Cost may also be introduced. Several efficient methods of calculation are reviewed for determining the optimized reliability-weight relations. 相似文献
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《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》1963,51(9):1202-1214
It is well known that the reliability of a circuit can be increased by designing it for worst-case conditions so that, even if component characteristics drift, the circuit will still operate satisfactorily. However, it is shown in this paper that extreme worst-case design can lead to increased operating temperature and, therefore, again reduced reliability. A method, illustrated by two practical examples, is indicated to find the compromise in component and circuit design tolerances leading to maximum reliability at any specified time or over any specified time interval. 相似文献
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低开销容错技术是当前软错误研究领域的热点。为了对微处理器进行低开销容错保护,首先就需要对微处理器可靠性(即体系结构弱点因子AVF (Architectural Vulnerability Factor))进行准确评估。然而,现有的AVF评估工具的精确性和适用范围都受到不同程度的限制。该文以微处理器上的核心部件(即存储部件)作为研究对象,对AVF评估方法进行改进,提出了一种访存操作分析和指令分析相结合的AVF评估策略HAES (Hybrid AVF Evaluation Strategy)。该文将HAES融入到通用的模拟器中,实现了更精确和更通用的AVF评估框架。实验结果表明相比其它AVF评估工具,利用该文提出的评估框架得到的AVF平均降低22.6%。基于该评估框架计算得到的AVF更加精确地反映了不同应用程序运行时存储部件的可靠性,对设计人员对微处理器进行低开销的容错设计具有重要指导意义。 相似文献
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简要介绍了几种内存芯片封装技术的特点。CSP是内存芯片封装技术的新概念,它的出现促进内存芯片的发展和革新,并将成为未来高性能内存的最佳选择。 相似文献