共查询到20条相似文献,搜索用时 62 毫秒
1.
2.
3.
4.
《电子元件与材料》2018,(4):49-55
采用sol-gel法制备出Ag掺杂的TiO_2纳米薄膜,利用SEM、XRD、UV-Vis、XPS及电化学工作站等对其光学及光电特性进行表征,研究了掺杂浓度及退火温度对材料晶体结构、光学特性及光电性能的影响规律。结果表明:Ag的掺杂提高了材料的晶相转变温度,降低了材料禁带宽度,使吸收带边发生红移(约40 nm),有效提高薄膜对太阳光的利用效率。当Ag掺杂浓度为摩尔分数0.5%,退火温度为500℃时,材料表现出最佳的光电活性,光电流密度达0.38×10~(–3)A/cm~2,相较于纯TiO_2薄膜的光电流密度增大约41%,光电性能得到显著提升且稳定性良好。 相似文献
5.
6.
7.
采用射频磁控溅射法分别在不同溅射功率下制备了Hf O2薄膜,基于该组薄膜实现了金属-绝缘体-金属(MIM)电容器原型器件。采用Raman、原子力显微镜(AFM)、扫描电子显微镜(SEM)、X射线光电子能谱学(XPS)和电学测试仪等分析手段,研究了溅射功率对薄膜微结构和电学特性的影响。测试结果表明,随着溅射功率的增加,HfO_2薄膜由无定形态向单斜晶相转化、颗粒尺寸逐渐增大、Hf—O键结合度增强,由于提高溅射功率导致了薄膜晶化、团簇和Hf—O结合能减小,使MIM电容器击穿电压降低,漏电流呈现先降后增。结果表明溅射功率为150 W时,HfO_2薄膜获得较好的电学性能。 相似文献
8.
阴极修饰对染料敏化TiO_2太阳能电池性能的改进 总被引:13,自引:0,他引:13
通过对染料敏化TiO2纳米晶太阳能电池中阴极进行修饰来提高电池的光电性能。结果表明:在阴极表面镀上具有催化性能的白金、镍或石墨均可提高电池的光电转化效率(IPCE)、短路电流、开路电压和填充因子等性能。其中白金修饰阴极后,电池的性能较好,IPCE从7.59%升至48.32%,短路电流从0.91 mA升至7.23 mA,开路电压从478 mV升至571 mV以及填充因子从0.09升至0.47。并给出用UV—3100型紫外可见分光光度计测定染料RuL2(SCN)2溶液的吸收光谱。 相似文献
9.
采用磁控溅射和退火技术制备出Au/SiO2纳米复合薄膜。利用扫描电子显微镜(SEM),X射线衍射(XRD)和原子力显微镜(AFM)对上述纳米复合薄膜进行了结构表征。实验结果表明,纳米复合薄膜的表面上均匀分布着直径在100~300nm的金纳米颗粒。金纳米颗粒的大小随着退火时间的增加而增大。用荧光光谱仪(PL)对薄膜的光致发光特性进行了研究。结果表明,在激发波长为325nm时,分别在525nm和560nm处出现两个发光峰;在激发波长为250nm时,在325nm处出现发光峰,这一发光峰可能与非晶SiO2的结构缺陷有关。 相似文献
10.
TiO_2纳米管阵列对染料敏化太阳能电池性能的影响 总被引:1,自引:0,他引:1
通过恒压阳极氧化法在Ti箔表面制备了结构规整的TiO2纳米管阵列,研究了氧化时间和退火温度对纳米管阵列的尺寸和晶体结构的影响。用制得的纳米管阵列电极组装了染料敏化太阳能电池(DSSC),研究了纳米管长度、退火温度和电极面积对DSSC光电性能的影响。结果表明,纳米管管径和壁厚均与氧化时间无关,而纳米管长度则随着氧化时间延长而增加。在450℃及更低温度退火时,纳米管中只出现锐钛矿相;而在500℃退火时,纳米管中则又出现了金红石相。由厚度为27μm、退火温度为450℃的纳米管阵列电极组装成的DSCC具有最佳的光电转化性能。DSCC的光电转化效率随电极面积的增加而降低。 相似文献
11.
Polycrystalline thin films of ternary ZnIn2Se4 compound with p-type conductivity were deposited on a pre-deposited aluminium (Al) film by a flash evaporation technique. A Schottky diode comprising of Al/p-ZnIn2Se4 structure was fabricated and characterized in the temperature range 303–323 K in dark condition. The Schottky diode was subjected to current (I)-voltage (V) and capacitance (C)-voltage (V) characterization. The Al/p-ZnIn2Se4 Schottky diode showed behaviour typical of a p-n junction diode. The devices showed very good diode behaviour with the rectification ratio of about 105 at 1.0 V in dark. The Schottky diode ideality factor, barrier height, carrier concentration, etc. were derived from I-V and C-V measurements. At lower applied voltages (V≤0.5 V), the electrical conduction was found to take place by thermionic emission (TE) whereas at higher voltages (V>0.5 V), a space charge limited conduction mechanism (SCLC) was observed. An energy band diagram was constructed for fabricated Al/p-ZnIn2Se4 Schottky diode. 相似文献
12.
Chandrasekhar A. Beyne E. De Raedt W. Nauwelaers B. 《Advanced Packaging, IEEE Transactions on》2004,27(1):203-212
The thin film multilayer multichip module-deposited (MCM-D) technology of IMEC is used for characterising the RF electrical performance of two types of chip scale packages (CSPs). The measurement technique called MCM-on-package-on-MCM (MoPoM) enables accurate measurements and de-embedding in the gigahertz (GHz) range of frequencies. Wafer processing of the MCM-D technology allows for several design structures to be integrated on a single mask. The packages chosen are a 120-pin plastic ball grid array (PBGA) and an 80-pin polymer stud grid array (PSGA). Lumped element models extracted from measurements and three-dimensional simulations show good agreement with the measurements up to 6 GHz for the BGA and the PSGA. The electrical performance of the packages is compared at 1.8 GHz (GSM), 2.4 GHz (Bluetooth), and 5.2 GHz (HiperLAN) and at 5.2 GHz both the packages exhibit a return loss of lower than -10 dB and hence cannot be used in most cases without design improvement. We also show that the influence of encapsulant is significant while transmission line detuning due to the package is not significant at microwave frequencies. We also briefly mention about the crosstalk effects. We demonstrate the significant degradation in the performance of a 5.2 GHz MCM-D low noise amplifier (LNA) after packaging. A significant improvement in package performance is observed by conjugate matching the package interconnects. 相似文献
13.
S. Mostafa Hosseinpour-Mashkani Masoud Salavati-Niasari Fatemeh Mohandes K. Venkateswara-Rao 《Materials Science in Semiconductor Processing》2013,16(2):390-402
For the first time, (1,8-diamino-3,6-dioxaoctan)copper(II) sulfate, [Cu(DADO)]SO4, and bis(propylenediamine)copper(II) sulfate, [Cu(pn)2]SO4, complexes as copper precursors have been used to prepare CuInS2 (CIS) nanoparticles in the presence of microwave irradiation. InCl3 anhydrous, thioacetamide (TAA), and propylene glycol were used as indium source, sulfur precursor, and solvent, respectively. Additionally, sodium dodecyl sulfate (SDS) was used as a capping agent. In this method, microwave irradiation created the activation energy for dissociating the precursors and led to the formation of CuInS2 nanoparticles. The effect of preparation parameters such as microwave power, irradiation time, and type of copper precursor on the particle size of the products was studied. To fabricate a solar cell, CdS film was directly deposited on top of the CIS film through the chemical bath deposition method. The as-deposited CdS/CuInS2 films were used for the photovoltaic measurements. According to I–V curves, it was found that the CIS nanoparticles synthesized by [Cu(DADO)]SO4 complex as precursor was better for solar cell applications. 相似文献
14.
The role of the Mn concentration in controlling the properties of ZnS:Mn electroluminescent thin film devices is reported.
It is found that the maximum brightness occurs at 1.3 ± 0.3 mole % Mn, but that significant hysteresis occurs only for Mn
concentrations higher than the maximum brightness doping level. 相似文献
15.
We report on fabrication of CuxFe1−xS2 (CFS) thin films using chemical spray pyrolysis followed by post-sulfurization. Post-sulfurized CFS films were grown with compact and good crystalline texture. The sulfur stoichiometry in CFS films was found to be crucial for determination of its crystal structure. The sulfur deficient CFS films were driven to chalcopyrite CFS (CH-CFS) structure whereas the sulfur cured CFS films were grown with Cu-incorporated pyrite CFS (P-CFS) structure which was confirmed by X-ray diffraction and Raman spectroscopy analysis along with UV–vis spectroscopy measurement. Electrical characterizations of both types of CFS films revealed p-type conductivity with carrier concentration in the range of 1018–1020 cm−3 and mobility of 0.5–9 cm2 V−1 s−1. The band gaps of CFS films of CH-CFS structure (0.885–0.949 eV) were found to be less than that of P-CFS structure (0.966–1.156 eV), which indicates its potential application for thermoelectric and photovoltaic devices. 相似文献
16.
This paper reports the size-dependent performance in polymer/CuInS2 solar cells with tunable synthesis of chalcopyrite CuInS2 quantum dots (QDs) by the solvothermal method. The CuInS2 QDs of 3.2–5.4 nm in size are fine tuned by the reaction time in the solvothermal process with the slow supply of In3+ ions during the crystallization, and the band gaps increased with QDs sizes decreasing according to the results from the characterization of sizes, morphologies, component elements, valence states and band gaps of CuInS2 QDs. We fabricated MEH-PPV/CuInS2 solar cells, and the photoactive layer of device displayed size-dependent light-harvesting, charge separation and transport ability. Moreover, the solar cells exhibit size-dependent short circuit current (Jsc) and open circuit voltage (Voc), with higher performance in both Jsc and Voc for smaller CuInS2 QDs, resulting in the maximum power conversion efficiency of ca. 0.12% under the monochromic illumination at 470 nm; CuInS2 QDs actually serve as an effective electron acceptor material for the MEH-PPV/CuInS2 solar cells with the wide spectral response extending from 300 to 900 nm. 相似文献
17.
基于半导体仿真软件Silvaco TCAD对薄膜晶体管(TFT)进行器件仿真,并结合实验验证,重点分析不同绝缘层材料及结构对TFT器件性能的影响。仿真及实验所用薄膜晶体管为底栅电极结构,沟道层采用非晶IGZO材料,绝缘层采用SiN_x和HfO_2多种不同组合的叠层结构。仿真及实验结果表明:含有高k材料的栅绝缘层叠层结构较单一SiN_x绝缘层结构的TFT性能更优;对SiN_x/HfO_2/SiN_x栅绝缘层叠层结构TFT,HfO_2取40nm较为合适;对含有高k材料的3层和5层绝缘层叠层结构TFT,各叠层厚度相同的对称结构TFT性能最优。本文通过仿真获得了TFT性能较优的器件结构参数,对实际制备TFT器件具有指导作用。 相似文献
18.
Bofei Liu Lisha Bai Ze Chen Xiaodan Zhang Dekun Zhang Jian Ni Qian Huang Changchun Wei Jian Sun Xinliang Chen Huizhi Ren Guofu Hou Guangcai Wang Ying Zhao 《Progress in Photovoltaics: Research and Applications》2015,23(10):1313-1322
We report on improving the performance of pin‐type a‐Si:H/a‐SiGe:H/µc‐Si:H triple‐junction solar cells and corresponding single‐junction solar cells in this paper. Based on wet‐etching sputtered aluminum‐doped zinc oxide (ZnO:Al) substrates with optimized surface morphologies and photo‐electrical material properties, after adjusting individual single‐junction solar cells utilized in triple‐junction solar cells with various optimization techniques, we pay close attention to the optimization of tunnel recombination junctions (TRJs). By means of the optimization of individual a‐Si:H/a‐SiGe:H and a‐SiGe:H/µc‐Si:H double‐junction solar cells, we compensated for the open circuit voltage (Voc) loss at the a‐Si:H/a‐SiGe:H TRJ by adopting a p‐type µc‐Si:H layer with a low activation energy. By combining the optimized single‐junction solar cells and top/middle, middle/bottom TRJs with little electrical losses, an initial efficiency of 15.06% was achieved for pin‐type a‐Si:H/a‐SiGe:H/µc‐Si:H triple‐junction solar cells. Copyright © 2014 John Wiley & Sons, Ltd. 相似文献
19.
Bing Zhou Xiaohong Jiang Zhubo liu Ruiqi Shen Aleksandr V. Rogachev 《Materials Science in Semiconductor Processing》2013,16(2):513-519
Titanium dioxide (TiO2) thin films were successfully prepared on quartz substrate by thermal oxidation of sputtered titanium film in air. The structure, composition, morphology and optical properties of oxidized TiO2 films were characterized by Raman spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy and UV-visible spectroscopy. Meanwhile, the photocatalytic activity of the films was evaluated on the basis of the degradation of methyl orange solution under UV irradiation. Ti films after oxidation present mainly in TiO2 form with a larger amount of adsorbed O2, and oxidation temperature has a strong impact on the crystal structure and properties of the films. A phase transformation of anatase to rutile for oxidized TiO2 films occurred in the temperature range of 700–800 °C. The energy band gap of oxidized TiO2 films decreased first and then increased with annealing temperature. Furthermore, TiO2 film oxidized at 600 °C exhibited the best photocatalytic activity due to suitable crystal phase and size. These results might contribute to the synthesis of metal oxide thin films with expectant structural morphology and properties by thermal oxidation methods. 相似文献
20.
A. Inberg Y. Shacham-Diamand E. Rabinovich G. Golan N. Croitoru 《Journal of Electronic Materials》2001,30(4):355-359
Thin Ag-W films were prepared on Si (100) substrate and on metal (Ag and Co) seed layers by electroless technology for ULSI
applications. The thin film electrical and physical parameters were studied as a function of the film composition. The thin
film composition depends on the electroless bath formula. The role of the tungsten in silver matrix was studied via measurements
of the film microhardness and thermal stability as function of the composition. The Ag-W films, thicker than 200 nm, exhibited
a specific electrical resistivity of about 2μΩ* and a reflectivity larger than 90%. These films have not corroded in air at
temperatures up to 200°C (thermal stable). Therefore, we assume that silvertungsten films can be used for applications where
reliable conducting thin films is required, such as packaging and interconnects for microelectronics. 相似文献