Complete noise characterisation of external cavity semiconductorlaser hybridly modelocked at 10 GHz

To the knowledge of the authors, the first amplitude modulation (AM) and phase modulation (PM) noise measurements out to Nyquist frequency offsets for an external cavity semiconductor laser hybridly mode locked at 10 GHz are reported. The differing noise properties of a fundamentally mode-locked and a harmonically mode-locked cavity (both producing 10 GHz, pulse trains) are compared     

Quasi-planar K-band push-push low phase noise oscillator stabilized by cavity resonator

The results of developing a K-band (24 GHz) push-push low phase noise transistor oscillator have been presented. This oscillator is stabilized by a rectangular resonant metallic cavity. The power level of output signal is ?9.5 dBm, the fundamental harmonic suppression is 21 dB. Single sideband (SSB) phase noise spectral density of ?98 dBc/Hz at 10 kHz and ?128 dBc/Hz at 100 kHz offset from the carrier frequency is at the level of dielectric resonator oscillators (DRO) scaled to the same frequency. The oscillator features a compact size, low cost quazi-planar design and it is built using commercially available off the shelf parts.     

10GHz介质振荡器的设计

介绍了介质振荡器的理论和设计方法,选择并联反馈式结构,设计了一个工作频点为10 GHz的介质振荡器。为了提高振荡器的输出功率,同时改善相位噪声,本文对传统电路结构进行改进,采用了二级放大的方式,提高了有源网络的增益,降低了介质谐振器与微带线的耦合度,达到了预期目标。结果表明,本文的理论分析是正确的,设计方案是可行的。     

Simulation of phase noise generated by white noise in 1.7 GHz CMOSLC oscillator

The phase noise resulting from upconversion of white noise in a CMOS LC oscillator is investigated. HSPICE simulations of phase noise resulting from the random-phase white noise in a 1.7 GHz CMOS LC oscillator have been performed and demonstrate that the phase noise resulting from the upconversion of white noise has a 1/f-dependence on the offset frequency and becomes larger as the white noise increases. The results provide a confirmation by circuit simulations of Leeson's empirical formula, and provide a technique for the design of low noise oscillators     

A 2 GHz surface transverse wave oscillator with low phase noise

A hybrid oscillator at 1.9805 GHz using acoustic surface transverse wave (STW) delay lines operating at the third harmonic as the frequency controlling element is discussed. The STW delay lines were fabricated on 37.5°-rotated Y-cut quartz substrates with a photolithographic technique. A very thin metallization (25 nm) was used to obtain low insertion loss. A split isolated electrode design was used for the transducers. The Q-value and the untuned insertion loss of the STW filter were 3400 and 21 dB, respectively. The phase noise and temperature stability of the oscillator were characterized. At a power output of 6.5 dBm a single-sideband phase noise-to-carrier ratio of -100 dBc/Hz at 1 kHz was attained     

Fully integrated low phase noise multi-band LC-tank voltage controlled oscillator with switched-capacitor resonator

This paper presents the design and implementation of a fully integrated low noise multi-band LC-tank voltage-controlled-oscillator(VCO).Multi-band operation is achieved by using switched-capacitor resonator.Additional three-bit binary weighted capacitor array is also used to extend frequency tuning range in each band.To lower phase noise,two noise filters are added and a linear varactor is adopted.Implemented in a 0.18 μm complementary-metal-oxide-semiconductor(CMOS) process,the VCO achieves a frequency tuning range covering 2.26～2.48 GHz,2.48～2.78 GHz,2.94～3.38 GHz,and 3.45～4.23 GHz while occupies a chip area of 0.52 mm2.With a 1.8 V power supply,it draws a current of 10.9 mA,10.6 mA,8.8 mA,and 6.2 mA from the lowest band to the highest band respectively.The measured phase noise is-109～-120 dBc/Hz and-121～-131 dBc/Hz at a 1 MHz and 2.5 MHz offset from the carrier,respectively.     

Quasi-optical measurement of carcinotron phase noise at 350 GHz

Phase noise of a single carcinotron operating at 350 GHz, at offset frequencies in the range 10⁵-10⁷ Hz, from the carrier has been measured. A quasi-optical analogue of the delay line frequency discriminator method was used, demonstrating a simple method capable of measuring phase noise in the (sub)mm region. The results obtained are of practical use in the design of phase locked systems, in the wavelength region used     

140 GHz, TE22,6模式回旋振荡管高频谐振腔

通过数值计算方法,编程模拟了140 GHz, TE22,6模式回旋振荡管开放式缓变截面谐振腔的传播特性,计算出谐振腔的谐振频率和品质因数;利用CST软件对该高频谐振腔进行仿真计算,得到腔体内横截面的电场分布云图。通过实验和仿真软件得到的数据进行比较,两者有较好的一致性。测试结果表明,当磁场为5.48 T,电子注电流为28 A,电子注电压为68.6 kV时,TE22,6模式的平均输出功率为0.25 kW,峰值功率为0.56 MW。当磁场为5.68 T,电子注电流为27.6 A,电子注电压为69.12 kV时,回旋振荡管可同样工作于TE22,6,2模式,平均输出功率为0.21 kW,峰值功率为0.47 MW。     

Picosecond pulse generation from passively modelocked vertical cavity diode laser at up to 15 GHz pulse repetition rate

The generation of ultrashort pulses (/spl sim/15 ps) from a passively modelocked InGaAs multiple quantum well (MQW) vertical cavity surface emitting diode laser is reported at a repetition rate up to 15 GHz, utilising a cavity configuration that incorporates a reverse-biased quantum well device as a fast saturable absorber. Pulsing at up to 20 GHz rate has been observed on a continuous-wave background.     

光电振荡器的相位噪声特性

与传统的微波振荡器相比,光电振荡器利用光纤储能,能够产生低相位噪声的微波信号.论述了光电振荡器的特点、基本结构和工作原理,推导了相位噪声的表达式,对其特性进行了理论研究,并构建了光电振荡器的实验.理论分析表明,光纤延时、激光器的相对强度噪声以及微波放大器的噪声系数会影响光电振荡器的相位噪声,为减小相位噪声提供了理论依据.实验测量了3种光纤延时下的相位噪声,并与理论分析的结果进行了对比,证明了理论分析的正确性.     

Planar realization of low phase noise 15/30 GHz oscillator/doubler using surface mount transistors

This paper presents the application of a novel high-Q planar waveguide resonator for microwave oscillator design. The waveguide cavity is made in printed-circuit-board process, first using a routed cut followed by a plated via-through-hole. Measurements show that the oscillator stabilized by the resonator delivers an output power of 14 dBm at 15 GHz and a phase noise of -98 dBc/Hz at 100 kHz offset from the carrier, under 5-V single bias. Experiments indicate the predominance of the waveguide resonator by a 13-dB phase noise improvement at 100 kHz offset against the microstrip oscillator.     

Design and simulation of optoelectronic oscillator with micro ring resonator and radio frequency amplifier modelling at 110 GHz

There is an increasing need for high performance oscillators as the faster transmission networks demand for high frequency signals. Opto-electronic oscillators (OEO) enable us to make better oscillators in terms of size, weight and power. In this paper, photonic integration is proposed for realizing the OEO with micro ring resonator (MRR) and radio-frequency (RF) amplifiers of monolithic microwave integrated circuit (MMIC), which can be used for generating 110 GHz sine wave. The OEO architecture is proposed and block diagram developed considering Silicon based MRR and three-stage RF amplifier based on GaN high-electron-mobility transistor (HEMT). A simulation model is developed according to the Klein model of MRR and is validated against the calculated performance parameters. MRR dimensions are calculated as with silicon on insulator (SOI) technology and a radius 5.27 μm for the device is derived. Free spectral range (FSR) of 48.52 nm and filter rejection ratio of 16.79 dB are obtained for this device. The proposed RF amplifier is modelled with GaN parameters derived from high frequency pinch-off model and with power amplifier considerations. The gain for this amplifier is obtained as 10.6 dB. The OEO design is developed in this project in such a way that the system can be manufactured with the existing methods.     

Theory of oscillator phase noise in correlative tracking systems

Structure functions are introduced into the theory of correlative tracking systems and how frequency and phase instability enters naturally into the system performance equations is shown. Both thetau-domain andf-domain peformance is characterized and a Mellin transform theory relating the two is given. The theory is applied to first-, second-, and third-order systems containing arbitrary phase detectors.     

Analytic investigation of frequency sensitivity in microwave oscillators: Application to the computation of phase noise in a dielectric resonator oscillator

The conversion of low frequency noise into phase noise in microwave oscillators is studied through an analytical calculation of the pushing factor. This calculation is based on a simplified equivalent circuit for two types of active devices : field effect transistors (Fet) and heterojunction bipolar transistors (hbt). The preeminence in the conversion process of the gate- source capacitance in theFet and the base- emitter junction in thehbt is pointed out. Practical methods are proposed to reduce the phase noise in these circuits.     

An alternative method for transistor low frequency noise estimation by measuring phase noise of test oscillator

In this paper we suggest an alternative method for the analysis of low frequency noise of transistors based on measurements of phase noise of a test oscillator. This method is demonstrated by experimental results obtained with a simple test oscillator with HEMT, and central frequency of 13.769 GHz. The main contribution to phase noise of the test oscillator comes from up conversion of transistor LF noise. This idea and the method can be used for the selection of transistors for high frequency application or for design of test circuit in RF IC manufacture.     

电子战接收机对本振相位噪声的需求研究

复杂而密集的电子信号对电子战接收机的性能提出了越来越高的要求,本振的相位噪声是电子战接收机的重要指标之一,对接收机的动态范围和数字误码率有着重要影响,针对实际工程中对相位噪声需求难以评估的问题,初步分析了相位噪声对接收机动态范围和数字误码率的影响,并通过实例进行了计算分析,可供工程技术人员参考。     

Design of 10 GHz eight-phase voltage controlled oscillator in 90 nm CMOS

A novel 10 GHz eight-phase voltage-controlled oscillator(VCO) architecture applied in clock and data recovery(CDR) circuit for 40 Gbit/s optical communications system is proposed.Compared with the traditional eight-phase oscillator,a new ring CL ladder filter structure with four inductors is proposed.The VCO is designed and fabricated in IBM 90nm complementary metal-oxide-semiconductor transistor(CMOS) technology.Measurement results show the tuning range is 9.2 GHz～11.0 GHz and the phase noise of-108.85 dBc/Hz at 1 MHz offset from the carrier frequency of 10 GHz.The chip area of VCO is 500 μm× 685 μm and the power dissipation is 17.4 mW with the 1.2 V supply voltage.     

本振相位噪声对接收机性能的影响

针对工程中本振相位噪声对接收机的影响常难以估量的问题,提出利用等效相位白噪声谱密度进行评估的方法.通过分析相位噪声的产生及其对剩余误码率和动态范围的影响机理,仿真了不同相位噪声对误码率的影响程度.通过仿真结果可知:相位噪声对接收机性能具有重要的影响,工程中应针对不同的应用场合要求合理的相位噪声指标.     

双反馈晶振和石英谐振器低噪声性能的进一步研究

本文进一步探讨了有关双反馈晶振低噪声性能的问题,着重分析了石英谐振器静电容C_0对双反馈晶振电路Q倍增固子、石英谐振器Q值及净噪特性的影响。为验证上述C_0的影响,也对不同C_0的石英谱振器的相噪特性进行了测量并得到了与分析一致的结果。