Initiated chemical vapor deposition of responsive polymeric surfaces

Organic materials can exhibit responsive behavior, including swelling upon exposure to a specific chemical analyte or displaying a switch surface energy in response to a change to external stimuli. The initiated Chemical Vapor Deposition (iCVD) of responsive surfaces facilitates their integration into novel devices and into roll-to-roll processing. Incorporating responsive organic layers into devices creates the ability to transduce chemical or biological events into optoelectronic signals. Additionally, ultrathin, responsive layers enable the design of novel membranes for separation and purification. This work describes the ability to synthesize thermally responsive organic layers by initiated Chemical Vapor Deposition (iCVD).     

Synthesis and characterization of Y-shaped carbon fibers by chemical vapor deposition

In this work, Y-shaped carbon fibers with high purity were successfully synthesized by CVD using copper tartrate as a catalyst precursor at low reaction temperature, 279 °C. A model has been proposed for interpreting the mechanism of the Y-shaped carbon fibers growth. It is suggested that the introduction of hydrogen is the key factor to the formation of three carbon fibers growth faces on every the agglomeration of copper monocrystalline catalyst particles and lead to the formation of Y-shaped carbon fibers subsequently. The Y-shaped carbon fibers were characterized by field emission scanning electron microscopy, transmission electron microscopy and X-ray diffraction.     

Bismuth activated alumosilicate optical fibers fabricated by surface-plasma chemical vapor deposition technology

Plasma chemical technology is experimentally applied to the fabrication of a Bi-activated alumosilicate-core pure-silica-cladding fiber preform. To the best of our knowledge, this is the first time this technology has been applied in this way. We measure gain efficiency at pumping by a 1058 nm wavelength Yb fiber laser in a piece of a newly obtained fiber 20 m in length within 100-1200 nm wavelengths band. The gain efficiency reaches as high as 0.2 dB/mW. Bi-activated alumosilicate-core pure-silica-cladding fiber that is not more than 12 m in length serves a basis for a 1 W output power fiber laser emitting at the wavelength of 1160 nm with 8% slope efficiency. We also measure the photoluminescence spectrum and kinetics of Bi centers responsible for laser emission under the excitation of 193 nm wavelength ArF laser pulses.     

改进化学气相沉积法在炭纤维表面生长碳纳米管(英文)

采用一种改进的化学气相沉积法在炭纤维表面制备碳纳米管。为了提高炭纤维表面的润湿性能,炭纤维在浸渍之前先在CVD设备中在真空下973 K的高温处理,然后在硝酸和浓硫酸体积比为3∶1的混合酸中酸处理30 min。而改进的化学气相沉积法关键在于让催化剂的还原步骤和碳纳米管的生长步骤同时进行。这样通过减小过渡金属元素与炭纤维之间的接触时间从而降低了它们之间的相互扩散,在确保了炭纤维本身的力学性能下降程度明显小于用普通化学气相法制备的情况下生长出长且茂密的碳纳米管阵列。另外,经过对工艺参数的优化发现当用乙醇作溶剂,Fe(NO3)3.9H2O溶度为100 mmol/L,氢气和碳源气体比值为4/1,而生长时间为30 min时得到最好的碳纳米管阵列。     

Growth of epitaxial sodium-bismuth-titanate films by metal-organic chemical vapor phase deposition

The liquid-delivery spin metal-organic chemical vapor phase deposition method was used to grow epitaxial sodium-bismuth-titanate films of the system Bi₄Ti₃O₁₂ + xNa_0.5Bi_0.5TiO₃ on SrTiO₃(001) substrates. Na(thd), Ti(OⁱPr)₂(thd)₂ and Bi(thd)₃, solved in toluene, were applied as source materials. Depending on the substrate temperature and the Na/Bi ratio in the gas phase several structural phases of sodium-bismuth-titanate were detected. With increasing temperature and/or Na/Bi ratio, phase transitions from an Aurivillius phase with m = 3 to m = 4 via an interleaved state with m = 3.5, and, finally, to Na_0.5Bi_0.5TiO₃ with perovskite structure (m = ∞) were established. These phase transitions proceed at remarkably lower temperatures than in ceramics or bulk crystals for which they had been exclusively observed so far.     

Synthesis of magnetic tunnel junctions with full in situ atomic layer and chemical vapor deposition processes

Magnetic tunnel junctions, i.e. the combination of two ferromagnetic electrodes separated by an ultrathin tunnel oxide barrier, are core elements in a large variety of spin-based devices. We report on the use of combined chemical vapor and atomic layer deposition processes for the synthesis of magnetic tunnel junctions with no vacuum break. Structural, chemical and morphological characterizations of selected ferromagnetic and oxide layers are reported, together with the evidence of tunnel magnetoresistance effect in patterned Fe/MgO/Co junctions.     

Growth of calcium carbonate by the atomic layer chemical vapour deposition technique

Thin films of CaCO₃ (calcite) have been grown with the atomic layer chemical vapour deposition (ALCVD) technique, using Ca(thd)₂ (Hthd=2,2,6,6-tetramethylheptan-3,5-dione), CO₂, and ozone as precursors. Pulse parameters for the ALCVD-type growth are found and self-limiting reaction conditions are established between 200 and 400 °C. Calcium carbonate films have been deposited on soda-lime glass, Si(100), -Al₂O₃(001), -Al₂O₃(012), -SiO₂(001), and MgO(100) substrates. The observed textures were: in-plane oriented films with [100](001)CaCO₃ [100](001)Al₂O₃ and [100](001)CaCO₃[110](001)Al₂O₃ on -Al₂O₃(001), amorphous films on -Al₂O₃(012) when grown at 250 °C, and columnar oriented films on soda-lime glass, Si(001), -SiO₂(001), and MgO(100) substrates with (00l) and (104) parallel to the substrate plane at 250 and 350 °C, respectively. The film topography was studied by atomic force microscopy and AC impedance characteristics were measured on as-deposited films at room temperature. The films were found to be insulating with a dielectric constant (_r) typically approximately 8. Thin films of CaO were obtained by heat treatment of the carbonate films at 670 °C in a CO₂-free atmosphere, but the thermal decomposition led to a significant increase in surface roughness.     

Influence of a SiN mask on GaN layer by metalorganic chemical vapor deposition

GaN layers with an in-situ SiN mask were grown by metalorganic chemical vapor deposition (MOCVD) and the physical properties of the GaN layer were examined. Also, PN junction light emitting diode (LED) was fabricated to investigate the effect of the SiN mask on its optical property. When inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 to 409 arcsec and threading dislocation (TD) density decreased from 3.21 × 10⁹ to 9.7 × 10⁸ cm⁻². The photoluminescence (PL) peak intensity of the sample with a SiN mask increased two times than that of the sample without a SiN mask. The output power of the LED with a SiN mask increased from 198 to 392 mcd at 20 mA, too. We found that a SiN mask improved significantly the physical and optical properties of the GaN layer.     

Synthesis of silicon carbide nanowires by solid phase source chemical vapor deposition

In this paper, we report a simple approach to synthesize silicon carbide (SiC) nanowires by solid phase source chemical vapor deposition (CVD) at relatively low temperatures. 3C-SiC nanowires covered by an amorphous shell were obtained on a thin film which was first deposited on silicon substrates, and the nanowires are 20–80 nm in diameter and several μm in length, with a growth direction of [200]. The growth of the nanowires agrees well on vapor-liquid-solid (VLS) process and the film deposited on the substrates plays an important role in the formation of nanowires.     

静态化学气相沉积法制备SiC纤维的拉伸强度分布研究

以沥青基炭单丝为基体,一甲基三氯硅烷为前驱体,使用静态化学气相沉积工艺,在1473K,常压环境下制备了SiC纤维.使用电子万能试验机测试了同一批次纤维的拉伸强度,结果表明其为双峰直方图分布.使用光学显微镜和扫描电子显微镜对纤维的形貌结构进行了表征.沿着反应器方向,不同区域的纤维依次表现为颗粒状、球状、平滑和倒圆锥结构.这些结构的差别导致了纤维力学强度的双峰分布.对沉积机制的分析表明,物料损耗效应和反应器两端的流场稳定性是影响纤维结构的主要因素.     

Processes in silicon deposition by hot-wire chemical vapor deposition

Hot-wire chemical vapor deposition is a rapidly developing CVD technique for the deposition of silicon thin films and silicon alloys and may become a competitor of the plasma-enhanced (PE) CVD method due to significant advantages such as high deposition rate, efficient source gas utilization, lack of ion bombardment, and low equipment cost. Little is known, however, about the mechanisms for catalytic decomposition of the source gases, gas phase reactions at commonly used pressures, and the growth reactions. In this article, the differences in the reactions at various filament materials are discussed and it is shown that the subsequent reactions in the gas phase and reactions contributing to film growth can be substantially different from those in PE-CVD, due to the lack of energetic electrons and ions. Further work is necessary to identify the role of each precursor for the deposition of amorphous and microcrystalline films.     

Thick boride coatings by chemical vapor deposition

In this paper we describe an experimental study of the chemical vapor deposition (CVD) of TiB₂ by the hydrogen reduction of TiCl₄ and BCl₃ with the purpose of obtaining very thick (more than 100 μm) and uniform coatings. The optimum deposition conditions were as follows: temperature, 900–950 °C; source gas ratios, $\text{[}\text{Ti}\text{]/[}\text{B}\text{] =}\text{1}\text{2}$ and $\text{[}\text{H}\text{]/[}\text{Cl}\text{] =}\text{6}\text{1}$. With these conditions, deposition rates greater than 25 μm h^-1 were obtained. The composition was very uniform with an excess of boron over stoichiometry (probably in the form of free boron). A small amount of chlorine remained incorporated in the deposit probably as TiCl₂ (0.05 wt.% at 950 °C). The coatings were very hard (about 3700 kgf mm^-2) and hardness was uniform through the thickness. With careful control of the deposition parameters, the CVD of uniform coatings with thickness of 1 mm or more appears feasible.     

Titanium carbonitrides obtained by chemical vapor deposition

This study is a preliminary investigation of hard abrasion-resistant coatings obtained by the chemical vapor deposition of titanium carbonitrides with the objectives of (1) developing a process with an upper temperature limit of 650 °C to avoid altering the properties of substrates such as steel and (2) establishing a relation between the properties of the coatings and the deposition parameters. By using amines as a source of carbon and nitrogen, uniform and adherent coatings were obtained at deposition temperatures of 550 °C to 650 °C, provided the steel substrate was electroplated with nickel or cobalt to prevent the formation of interfacial iron chlorides. X-ray diffraction showed that the lattice parameter of the coatings deposited with trimethylamine increased with higher deposition temperatures with a corresponding increase in the carbide mole per cent, which rose from 25% at 550 °C to 72% at 650 °C. The lattice parameter and the carbide mole per cent were higher with trimethylamine than with dimethylamine (53% and 30%, respectively, at 600 °C).     

石墨烯的化学气相沉积法制备

化学气相沉积(CVD)法是近年来发展起来的制备石墨烯的新方法,具有产物质量高、生长面积大等优点,逐渐成为制备高质量石墨烯的主要方法.通过简要分析石墨烯的几种主要制备方法(胶带剥离法、化学剥离法、SiC外延生长法和CVD方法)的原理和特点,重点从结构控制、质量提高以及大面积生长等方面评述了CVD法制备石墨烯及其转移技术的研究进展,并展望了未来CVD法制备石墨烯的可能发展方向,如大面积单晶石墨烯、石墨烯带和石墨烯宏观体的制备与无损转移等.     

Rheotaxial diamond growth by chemical vapor deposition

This paper is to report a novel method to synthesize diamond crystal by using a well developed chemical vapor deposition process, but on a liquid substrate, while substrates of prevailing practice are solid. The substrate materials are metals which become liquid at diamond deposition temperature, such as elements Sn and Ga, and eutectic alloys of Cu-Ge, Sn-Ge. One result is that, while reported diamond crystal size was about 10 to 40 micrometers on the solid substrate, on the liquid substrate, the crystal size has reached so far about 300 micrometers. Received: 17 May 2000 / Reviewed and accepted: 8 June 2000     

Photocatalytic TiO(2) deposition by chemical vapor deposition

Dip-coating, spray-coating or spin-coating methods for crystalline thin film deposition require post-annealing process at high temperature. Since chemical vapor deposition (CVD) process is capable of depositing high-quality thin films without post-annealing process for crystallization, CVD method was employed for the deposition of TiO(2) films on window glass substrates. Post-annealing at high temperature required for other deposition methods causes sodium ion diffusion into TiO(2) film from window glass, resulting in the degradation of photocatalytic efficiency. Anatase-structured TiO(2) thin films were deposited on window glass by CVD, and the photocatalytic dissociation rates of benzene with CVD-grown TiO(2) under UV exposure were characterized. As the TiO(2) film deposition temperature was increased, the (112)-preferred orientations were observed in the film. The (112)-preferred orientation of TiO(2) thin film resulted in a columnar structure with a larger surface area for benzene dissociation. Obviously, benzene dissociation rate was maximum when the degree of the (112) preferential orientation was maximum. It is clear that the thin film TiO(2) should be controlled to exhibit the preferred orientation for the optimum photocatalytic reaction rate. CVD method is an alternative for the deposition of photocatalytic TiO(2).     

In situ gas phase measurements during metal alkylamide atomic layer deposition

Metal alkylamide compounds, such as tetrakis(ethylmethylamido) hafnium (TEMAH), represent a technologically important class of metalorganic precursors for the deposition of metal oxides and metal nitrides via atomic layer deposition (ALD) or chemical vapor deposition. The development of in situ diagnostics for processes involving these compounds could be beneficial in, e.g., developing deposition recipes and validating equipment-scale simulations. This report describes the performance of the combination of two techniques for the simultaneous, rapid measurement of the three major gas phase species during hafnium oxide thermal ALD using TEMAH and water: TEMAH, water, and methylethyl amine (MEA), the only major reaction by-product. For measurement of TEMAH and MEA, direct absorption methods based on a broadband infrared source with different mid-IR bandpass filters and utilizing amplitude modulation and synchronous detection were developed. For the measurement of water, wavelength modulation spectroscopy utilizing a near-IR distributed feedback diode laser was used. Despite the relatively simple reactor geometry employed here (a flow tube), differences were easily observed in the time-dependent species distributions in 300 mL/min of a helium carrier gas and in 1000 mL/min of a nitrogen carrier gas. The degree of TEMAH entrainment was lower in 300 mL/min of helium compared to that in 1000 mL/min of nitrogen. The capability to obtain detailed time-dependent species concentrations during ALD could potentially allow for the selection of carrier gas composition and flow rates that would minimize parasitic wall reactions. However, when nitrogen was employed at the higher flow rates, various flow effects were observed that, if detrimental to a deposition process, would effectively limit the upper range of useful flow rates.