Polymer microring resonators for biochemical sensing applications

Polymer microring resonators were demonstrated for sensing biomolecules without using fluorescent labels. The microring devices, fabricated by a direct imprinting technique, possess high Q factors of /spl sim/20000. This feature provides high sensitivity and a low detection limit for biochemical sensing applications. With these properties, the devices were used to detect and quantify the biomolecules present either in a homogeneous solution that surrounds the microring waveguide (homogeneous sensing) or specifically bound on the waveguide surface (surface sensing). In the former sensing mechanism, the current devices can detect an effective index change of 10/sup -7/ refractive index units (RIU); in the latter, they can reach a detection limit of /spl sim/250 pg/mm/sup 2/ of biomolecular coverage on the microring surface. In addition, the experiments show that the devices can detect both small and large biomolecules.     

Quasi-one-dimensional photonic crystal as a compact building-block for refractometric optical sensors

We report the fabrication and the characterization of the refractometric and thermo-optical properties of a quasi-one-dimensional waveguide photonic crystal-a strong, 76-/spl mu/m-long Bragg grating. The transmission spectra (around 660 nm) of the structure have been measured as a function of both the cladding refractive index and the temperature. The transmission stopband was found to shift by 0.8-nm wavelength for either a cladding refractive index change of 0.05 or a temperature change of 120 K. The steep stopband edges provide a sensitive detection method for this band shift, by monitoring the transmitted output power.     

Wavelength demultiplexer using GaInAs-InP MQW-based variable refractive-index arrayed waveguides fabricated by selective MOVPE

A GaInAs-InP multiple quantum well (MQW)-based wavelength demultiplexer composed of an arrayed waveguide in which the refractive index varies across the array was fabricated. Since optical path length differences between waveguides in the array are achieved through refractive-index differences that are controlled by SiO/sub 2/ mask design in selective metal-organic vapor phase epitaxy (MOVPE), straight waveguide gratings having reduced optical propagation losses can be achieved. Furthermore, by employing MQW waveguides, variations in the refractive index may be induced through an applied electric field, allowing the device to manipulate wavelengths dynamically. A straight arrayed waveguide device having a 1.4% difference in refractive index was fabricated using an asymmetric side mask via a single selective MOVPE growth. The achievement of a diffraction angle difference of 4.40/spl deg/ between wavelengths of 1520 and 1580 nm was confirmed experimentally. In addition, a preliminary wavelength demultiplexer with a wavelength separation of approximately 25 nm and a free spectral range (FSR) of approximately 100 nm was also fabricated.     

Label-Free Fiber Optic Biosensors With Enhanced Sensitivity

A sensitivity-enhanced long-period grating in-fiber Michelson interferometer with diameter-reduced cladding was proposed for the first time, and was also demonstrated as a label-free biosensor based on refractive index measurement. The cladding structure dependence of the sensitivity for antibody-antigen immuno-sensing was studied experimentally. The proposed biosensor has shown an 8.5-fold sensitivity enhancement as compared to sensors without cladding reduction.     

Design of high-Q microcavities for proposed two-dimensional electrically pumped photonic crystal lasers

Electrically pumped photonic crystal lasers are of practical importance for future integrated photonic circuit systems. This paper proposes a methodology for achieving high quality (Q) factor photonic crystal defect cavities that allow current injection into their active regions. It is shown that by combining certain high Q-factor photonic crystal cavity designs with the technique of wet oxidation of (Al,Ga)As layers, Q factors of up to /spl sim/10/sup 4/ can be obtained within the scope of existing semiconductor planar process technology. The proposed device structures can be optimized through use of finite-difference time-domain methods to obtain optimal separation of the high refractive index substrate from the active core; furthermore, the effects of the top ohmic contact layer, the top and bottom cladding layers of the structure, and the current injection opening can be taken into account to achieve an optimal Q factor in electrically pumped lasers.     

Nonselective wet oxidation of AlGaAs heterostructure waveguides through controlled addition of oxygen

We present data showing that the addition of trace amounts of O/sub 2/ (<1% relative to N/sub 2/) to N/sub 2/+H/sub 2/O process gas during the wet thermal oxidation of Al/sub x/Ga/sub 1-x/As enhances the oxidation rates of lower Al content (x /spl les/ 0.8) alloys (a tenfold increase for x=0.3), while decreasing the oxidation rate selectivity R(x=0.8)/R(x=0.3) by a factor of seven. An increase in the refractive index from 1.49 to 1.68, and a fourfold decrease in surface roughness, indicates the formation of a denser, higher quality oxide for x=0.3 AlGaAs. Oxides are characterized by prism coupling, atomic force microscopy, and scanning electron microscopy. Thermochemical calculations show a probable mechanism in the enhancement of the dry oxidation reactions of AlGaAs for low levels of O/sub 2/, while there is still an adequate quantity of H/sub 2/ produced to reduce As oxides in the wet oxidation process. An AlGaAs quantum well heterostructure p-n laser diode crystal is nonselectively oxidized to create a deep oxide, high-index contrast waveguide with potential applications in semiconductor photonic integrated circuits that require small bend radius, high isolation, low crosstalk optical waveguides.     

Effect of ambient relative humidity and surface modification on the charge decay properties of polymer powders in powder coating

Back corona on a powder layer deposited via the electrostatic powder-coating process using corona guns has a strong influence on the corrosion resistance and appearance of cured powder films. The presence of the back corona is often evidenced by orange peel, micro-dents, and pinholes on the film surface. The surface resistivity of the sprayed powder governs the charge decay process and, hence, the onset of back corona. The polymer powders used in powder coating are highly resistive, with surface resistivity often greater than 10/sup 15/ /spl Omega///spl square/. Surface resistivity can be altered by the adsorption of moisture on the surfaces of the powder particles. The objectives of this research were: (1) investigate the effect of decreasing surface resistivity on the appearance of the powder-coated film and (2) enhance hydrophilic properties of polymer powder by plasma treatment. By changing the relative humidity (RH) of powder during the spraying process, it was observed that the surface resistivity could be lowered by orders of magnitude. For example, the surface resistivity for an acrylic powder decreased from 2.96/spl times/10/sup 13/ /spl Omega///spl square/ at 25% RH to 9.6/spl times/10/sup 11/ /spl Omega///spl square/ at 70% RH. The plasma treatment of this powder further improved its charge decay properties. The effects of variation of RH on the appearance of powder-coated panels surface layer are presented for an acrylic polymer powder. The film texture has been characterized by microstructural surface analysis using an optical scanning instrument. Methods of plasma and corona treatments of the powder for increasing moisture adsorption on the surface and decreasing surface resistivity are discussed along with analysis of surface morphology using the atomic force microscope.     

II-VI semiconductors on InP for green-yellow emitters

Novel II-VI compound materials such as MgZnCdSe, BeZnCdSe, BeZnTe, and related superlattices grown on InP substrates have been investigated for yellow-green emitters employing molecular beam epitaxy. MgZnCdSe was grown in the Mg composition range of 0/spl sim/0.6 to clarify the compositional dependency of the bandgap and refractive index. MgSe-ZnCdSe and MgSe-ZnSeTe short-period superlattices were investigated; the superlattices behaved as quasi-quaternaries (QQs), so that their bandgap energies were controlled by the layer thickness combination of superlattices. For realizing strong lattice hardness, Be-contained H-VI compounds, such as BeZnCdSe and BeZnTe bulk crystals, and MgSe-BeZnCdSe, ZnCdSe-BeZnTe, and MgSe-BeZnTe short-period superlattices were investigated. The superlattices also behaved with QQ properties, by use of which multilayered heterostructures could be grown without growth interruption. Applying the superlattices, visible LEDs were fabricated emitting at the wavelengths from 554 (yellow-green) to 644 nm (red) at room temperature. For yellow (575 nm) LEDs, a long lifetime more than 3500 h was demonstrated even for defect densities as high as 10/sup 5/ cm/sup -2/. The BeZnTe buffers were effective in suppressing the defect density to less than 7 /spl times/ 10/sup 3/ cm/sup -3/. Finally, MgZnCdSe-based II-VI LDs were successfully operated with yellow-green lasing emissions around 560 nm at 77 K.     

High-power high-efficiency 660-nm laser diodes for DVD-R/RW

A kink mechanism in 660-nm laser diodes (LDs) has been studied experimentally. The experiments revealed that the main origin of the kink is a refractive index change due to heat generation in the stripe portion, and the kink power can be increased by improving the temperature characteristics of the LD. A newly developed LD, based on this result, shows stable lateral mode operation up to 190 mW at 80/spl deg/C. This is the highest power recorded among narrow stripe LDs with a wavelength of 660 nm. This LD is suitable for the next generation of high-speed (8x-) DVD-R/RW drives necessitating 140 mW class LDs.     

Charge storage and its dynamics in porous polytetrafluoroethylene (PTFE) film electrets

The outstanding space charge storage stability of porous polytetrafluoroethylene (PTFE) film electrets is studied by isothermal surface potential decay measurements and open-circuit thermally stimulated discharge (TSD) experiments after corona charging at room and elevated temperatures, or corona charging at RT and then aging at different temperatures. Charge storage properties of porous PTFE, nonporous PTFE (Teflon/spl reg/ PTFE) and nonporous FEP (Teflon/spl reg/ FEP) electrets are compared. The results show that porous PTFE has the best charge storage stability of organic materials for both negative and positive charges, especially at high temperatures. The structure of porous PTFE, investigated by a scanning electron microscope (SEM), is important for understanding the electret properties of this material. Charge dynamics, including the influence of environmental humidity and temperature on charge stability and shift of mean charge depth, and the kinetics of detrapped charges for the porous PTFE film electrets were also investigated by means of isothermal surface potential decay measurements and analysis of the TSD current spectra in combination with the heat pulse technique. It is found that from about RT to 200/spl deg/C slow retrapping plays a dominant role; from about 200/spl deg/C to 300/spl deg/C fast retrapping controls the transport.     

3-D MOEMS mirror for laser beam pointing and focus control

A biaxial torsion scan mirror with a deformable membrane surface is described. The 700-mm-diameter optical surface can be tilted /spl plusmn/4/spl deg/ about two orthogonal axes and can be deformed to a parabola with greater than 3-mm sag at the membrane center. The surface, therefore, acts as a lens with variable focal length ranging from /spl infin/ to 10 mm. Mirror architecture and applications in three-dimensional beam pointing and scanning are discussed.     

The application of porous silicon to optical waveguiding technology

The porosification of silicon can be achieved by the partial electrochemical dissolution (anodization) of the surface of a silicon wafer. The degree of porosity is dependent on the anodization parameters and can generally be controlled within the constraints imposed by substrate dopant type and concentration. Control of porosity leads to control of refractive index, and therein lies the concept of using porous silicon as an optical waveguide. We discuss porous silicon wavegides, for the visible to the infrared, produced by a number of approaches: 1) epitaxial growth onto porous silicon (where the porous layer acts as a substrate for a higher refractive index waveguide epilayer); 2) ion implantation (where either selective areas of high electrical resistivity can be produced, which act as a barrier against porosification, or where the surface of a porosified layer is amorphised to form a waveguide; 3) porous silicon multilayers (where the anodization parameters are periodically varied to produce alternate layers of different porosity and thus refractive index); and 4) oxidation of porous silicon (where a porosified layer is oxidized to form a graded-index, dense or porous, oxide waveguide)     

Modal characteristics and bistability in twin microdisk photonic molecule lasers

We demonstrate coupled-mode characteristics and bistability in photonic molecule lasers composed of evanescent-coupled GaInAsP twin microdisks. First, we show room-temperature continuous-wave operation by photopumping and discuss the unique behavior of coupled modes, i.e., the anticrossing and splitting characteristics of bonding and antibonding modes. Next, we present the clear bistability, which is observed for the antibonding mode by nonuniform pumping with an effective power of nearly 40 /spl mu/W. It is explained by rate equation analysis, which assumes saturable absorption. The analysis also predicts mode switching by the carrier-induced refractive index change. A micron-sized device with a very low power consumption will allow large scale integration of optical memories, optical flip-flops, and so forth.     

Flashover voltage of alumina ceramic contaminated by metal vapor in vacuum interrupters

We investigated the influence of metal vapor contamination of ceramic surfaces on flashover voltage (FOV) in vacuum. First, disk shape alumina (Al/sub 2/O/sub 3/) ceramics with surface resistivity (/spl rho/) of 10/sup 2/-10/sup 15/ /spl Omega/ were produced using deposition phenomena of metal vapor emitted from CuCr contacts. The impulse FOV for the ceramics decreased, as /spl rho/ reduced; FOV, the conditioning effect on FOV, and the scattering of FOV decreased when /spl rho/ was below 10/sup 12/ /spl Omega/. Therefore, the criterion value /spl rho/, which maintains excellent flashover performances of ceramic surface, is 10/sup 12/ /spl Omega/. Second, experimental vacuum interrupters (VIs) were produced to measure breakdown voltage before and after forty short-circuit current switchings with 20-40 kA/sub rms/ and were disassembled to measure the /spl rho/ of their inner ceramic surface. In a VI, which has inside diameters at both ends of the main shield much larger than the contact diameter, /spl rho/ was reduced to 10/sup 4/ /spl Omega/, further decreasing breakdown voltage between terminals.     

Synthesis of fullerene-modified P(St-MMA-AA) colloids and optical performance in colloidal crystals

Abstract

By constantly trying to change the amount of sodium dodecyl benzene sulfonate (SDBS), monodispersed P(St-MMA-AA) colloids with diameters about 240?nm was synthesized successfully using emulsion polymerization. The polymer latex particles having an amino group on the surface are grafted with fullerene acetic acid to obtain fullerene-modified P(St-MMA-AA) microspheres by an amidation reaction. The corresponding colloidal crystals were fabricated and investigated. In view of the high refractive index of fullerenes, the refractive index of the fullerene-modified P(St-MMA-AA) microspheres is improved.     

Integrated-optic surface-plasmon-resonance biosensor using gold nanoparticles by bipolarization detection

A new integrated-optic surface-plasmon-resonance (SPR) biosensor using gold nanoparticles with the ability of bipolarization interrogation is demonstrated. Although the previous SPR biosensor using gold nanoparticles can excite the surface plasma wave by the TM- and the TE-polarized lightwave, the sensitivity to the environmental index change for the TE-polarized lightwave is too low to be useful. The new integrated-optic SPR biosensor with a ridge waveguide structure can produce the obvious SPR wavelength shifts varied with the analyte concentration for two orthogonal polarizations. Therefore, two kinds of analytes can be separately detected by the TM- and the TE- polarized modes in one SPR biosensor, and the number of detectable biomaterials by the biosensor array in one chip can be doubled. This SPR biosensor is designed for the concentration measurement of beta-blocker, which is a remedy for heart disease. In the linear operation range, the SPR wavelength increases with the concentration of beta-blocker at a rate of 0.073 and 0.029 nm/ppm for the TM- and the TE- polarized modes, respectively.     

Ultra high vacuum properties of some engineering polymers

Engineering Polymers are very good candidates for applications requiring mechanical properties comparable with metals, chemical inertia, high insulation capability, high temperature operation and ultra high vacuum (UHV) compatibility. The results of a systematic test series, aimed at qualifying the engineering resins VESPEL/spl reg/ SP1, PEEK and CELAZOLE/spl reg/ PBI as UHV seals, are reported. The study of the materials behavior has been carried out over a wide temperature interval, ranging from 20 to 400/spl deg/C. In addition to the tightness and permeation tests, thermal desorption and gas chromatographic-mass spectrometer (GC/MS) analysis have also been performed. The results obtained indicate that CELAZOLE/spl reg/PBI provides the best performance, since it can be operated safely up to 375/spl deg/C, without giving any sign of leak or other drawbacks. PEEK, on the contrary, does not stand temperatures higher than 275/spl deg/C but, below this limit, it remains a very cost effective and reliable alternative. VESPEL/spl reg/ SP1, in its turn, can be operated safely up to 325/spl deg/C but above this temperature its properties start to degrade even if not in an abrupt manner as is the case for the other two resins. The possible applications of some of these polymers in the field of nuclear fusion research are also briefly described.     

Charge storage in corona-charged polypropylene films analyzed by LIPP and TSC methods

Negatively corona-charged 50-/spl mu/m-thick polypropylene (PP) film is measured using laser-induced pressure pulse (LIPP) and thermally stimulated current (TSC) in order to study the charge storage mechanism in the PP film. The LIPP can reveal the space-charge distribution in the depth direction of the PP films and the TSC can be used to measure the energetic depth of the charge trap. The LIPP shows that negative charge is deposited on the charged surface of the sample. Almost all surface charges are removed by soaking the sample in ethanol. However, about 5% of the surface charge is injected into the sample up to a depth of about 7 /spl mu/m from the surface. The injected charge is not removed by the dip-in-ethanol method because the ethanol does not penetrate into the sample. The injection of the surface charge increases with corona-charging temperature. Besides the negative charge injection, the injection of positive charge from the opposite surface is also observed when the sample is charged at higher than 60/spl deg/C. In addition, negative bulk charge is formed when the sample is charged at higher than 80/spl deg/C. The LIPP profile is compared with the TSC spectrum. It is shown that the space charge observed using LIPP disappears when the temperature of the sample exceeds 80/spl deg/C. However, TSC is observed at even higher than 80/spl deg/C. This indicates that the TSC is observed even after the disappearance of the space charge measured using LIPP.     

Gimbal-less monolithic silicon actuators for tip-tilt-piston micromirror applications

In this paper, fully monolithic silicon optical scanners are demonstrated with large static optical beam deflection. The main advantage of the scanners is their high speed of operation for both axes: namely, the actuators allow static two-axis rotation in addition to pistoning of a micromirror without the need for gimbals or specialized isolation technologies. The basic device is actuated by four orthogonally arranged vertical comb-drive rotators etched in the device layer of an silicon-on-insulator wafer, which are coupled by mechanical linkages and mechanical rotation transformers to a central micromirror. The transformers allow larger static rotations of the micromirror from the comb-drive stroke limited rotation of the actuators, with a magnification of up to 3/spl times/ angle demonstrated. A variety of one-axis and two-axis devices have been successfully fabricated and tested, in all cases with 600-/spl mu/m-diameter micromirrors. One-axis micromirrors achieve static optical beam deflections of >20/spl deg/ and peak-to-peak resonant scanning of >50/spl deg/ in one example at a resonant frequency of 4447 Hz. Many two-axis devices utilizing four rotators were tested, and exhibit >18/spl deg/ of static optical deflection at <150 V, while their lowest resonant frequencies are above 4.5 kHz for both axes. A device which utilizes only three bidirectional rotators for tip-tilt-piston actuation achieves -10/spl deg/ to 10/spl deg/ of optical deflection in all axes, and exhibits minimum resonant frequencies of 4096 and 1890 Hz for rotation and pistoning, respectively. Finally, we discuss the preliminary results in scaling tip-tilt-piston devices down to 0.4 /spl times/ 0.4 mm on a side for high fill-factor optical phased arrays. These array elements include bonded low-inertia micromirrors which fully cover the actuators to achieve high fill-factor.     

Boundary effects on the optical properties of InGaN multiple quantum wells

We examine the issues of spontaneous and piezoelectric polarization discontinuity on the optical properties of 3.0-nm-thick indium gallium nitride (InGaN) multiple quantum wells (MQWs). A quench of band-edge emission from the cap GaN layer is observed when the photoexcitation source is changed from a 355- to a 248-nm laser. The interband transitions from the InGaN wells exhibit a linear dependence on the 1) spectral blue shift of /spl sim/8.5/spl times/10/sup -18/ meV /spl middot/ cm/sup 3/ and 2) change of the internal field of /spl sim/3/spl times/10/sup -14/ meV /spl middot/ cm/sup 2/ with the injected carrier density up to N/sub inj//spl sim/10/sup 19/ cm/sup -3/ at 77 K. These observations are attributed to the redistribution of photogenerated carriers in the InGaN wells due to the polarization discontinuity at the QW interface and the surface band bending effect. By incorporating an additional boundary condition of surface Fermi-level pinning into the Poisson equation and the band-structure analysis, it is shown the emission from the InGaN-GaN MQWs is dominant by the recombination between the high-lying subbands and the screening of internal field effects.