蒸发波导环境测量与雷达探测性能分析

舰载微波超视距雷达主要通过大气波导传播效应实现对目标的超视距探测。利用测量的水文气象参数,根据蒸发波导模型预测蒸发波导高度,讨论了中性、稳定以及不稳定条件下的3种蒸发波导剖面。给出了便于蒸发波导环境下使用的修正雷达方程,基于抛物方程模型形成微波超视距雷达的探测性能分析方法。在我国南海海域开展了舰载蒸发波导环境测量及微波雷达探测的对比试验,在超视距预测的性能上理论预测结果与实际探测结果较为一致。分析结果对雷达探测及电子战应用具有重要意义。     

Chirp-Z变换在LFMCW雷达液位测量中的应用

在LFMCW雷达液位测量原理的基础上,分析了采用FFT算法来提高测量精度需以增加运算量为代价的不足,引入了一种FFT-CZT算法,来提高系统的测量精度。最后在MATLAB环境下,仿真出雷达回波信号分别经过FFT和FFT-CZT算法处理后的频谱图,经计算比较和仿真结果分析表明,FFT-CZT算法不仅可以显著提高计算效率而且有利于提高雷达液位测量精度。     

地球同步轨道星载降雨测量雷达设计

分析了雨的空间分布特性,对现阶段降雨测量雷达的现状进行了调研,提出了一种地球同步轨道星载降雨测量雷达设计方法。该雷达采用Ka频段工作频率,采用螺旋扫描实现5 000km直径的圆区域覆盖,可实现0.3mm/h以上强度降雨的探测。同时,地球同步轨道降雨测量雷达可实现定点观测,通过3~4颗卫星组网即可实现全球覆盖。该雷达是实现全球气候与环境变化监测,军事战场作战环境综合探测的必要装备。     

TEP技术在多普勒气象雷达中的应用北大核心CSCD

战术环境处理器(TEP)是一种全传感器技术,可以将环境测量的回波数据转换成谱分量。TEP能够进行气候评估,与其他的环境感知技术的不同是它能够在执行雷达日常任务的同时完成测量工作。文中介绍了TEP在多普勒气象雷达中的应用,通过改善传感器和策略的环境感知、优化,提高气象雷达的准确测量和大气的连续变化。     

瞬态极化雷达中极化测量与校准的数学原理及实验验证

瞬态极化雷达是一种具有两路正交极化通道独立收发能力的新体制雷达,可实现目标极化散射矩阵的瞬时测量。在对传统的瞬态极化雷达目标极化散射矩阵测量原理进行分析的基础上,详细介绍了基于模糊函数矩阵的极化测量新方法,给出了相应的信号处理流程;并提出了基于单个金属球定标体的极化散射矩阵测量结果校准方法;最后介绍了基于瞬态极化雷达试验系统开展的仿真实验、外场测量实验及实验结果。     

机载雷达杂波测量方法及其应用

雷达杂波是影响雷达性能发挥的重要因素,同时雷达杂波量化也是雷达性能验证评估的重要依据.在工程应用中,基于种种考虑,对试飞环境下的杂波测量需利用本机雷达来测量杂波.然而由于其非杂波测量专用雷达,也带来了一定的局限性和难度,在杂波测量方案中要统筹考虑.文中将结合机载雷达工程杂波测量,介绍雷达杂波测量的方法以及需要注意的问题,重点分析了杂波测量系统校准方法,并给出部分典型杂波测量和分析结果.     

弹道测量雷达极限精度分析与仿真

文中在推导分析雷达最小测量误差(随机误差)理论下限(Cramer-Rao界限)的基础上,在仿真计算出2种常用体制弹道测量雷达的参数测量极限精度后,进一步仿真计算出全弹道坐标的极限测量精度,通过对仿真结果分析比较,对上述这2种体制雷达的测量能力、测量精度有了更清晰的认识,为弹道测量雷达设计与应用提供了重要参考依据。     

雷达低空目标闭环跟踪的C2-偏差补偿算法研究

在单脉冲测角体制下,由于多径回波信号的干扰,极大地降低了雷达低空目标俯仰角测量精度.通过对多路径反射环境模型分析,同时考虑镜面反射和漫反射的干扰,得出了岸、海基单脉冲雷达低空目标跟踪时俯仰角测量误差的产生原因,将传统的多目标分辨算法(C2算法)与偏差补偿技术相结合应用于低角多径环境下目标俯仰角的测量,弥补两种算法各自的不足.在给定的测量环境下对不同高度目标进行了仿真,得到良好的仿真结果,表明两种算法结合使用,可较大地提高低空目标俯仰角的测量精度.     

用于脉冲多普勒雷达的调频/调幅噪声测试设备

本文叙述用来测量Ku波段脉冲多普勒雷达的连续波信号和脉冲连续波信号的幅度噪声和相位噪声的一种新的测试方法。这些噪声测量是在模拟雷达工作环境中进行的,因此,测试结果可以直接给出信息,以确定雷达杂波下可见度。与常规的噪声测试方法相比较,这种新方法不仅给出更加有意义的结果,而且可以很快地获得测试结果。本文通过方块图和理论分析来叙述实际的测试系统设计,同时也叙述了测定发射机信号中近似频率抖动的方法。     

多波段共面天线的研究

跟踪测量雷达因其精度要求,波束宽度很窄。为实现雷达自引导功能,本文介绍了一种跟踪测量雷达的多频段共面的天线技术,重点对共面天线设计、组合馈源设计以及双频段自引导概率计算进行了论述,并给出了一些设计实例和仿真计算结果。结果表明:多频段天线的应用完全可用一部雷达取代两部或两部以上的雷达。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.