面向卫星移动通信的系统级仿真平台设计与实现

针对卫星移动通信系统中对组网架构、协议体制和关键技术进行仿真论证的需求,设计了系统级仿真平台。首先介绍了系统级仿真平台架构,然后结合架构分析仿真平台的配置管理模型,对卫星、终端、信关站等核心通信节点进行建模,研究仿真平台工作流程,最后,通过多用户并发模式下随机接入过程仿真验证系统级仿真平台有效性。与传统方法相比,该仿真平台可适用于多星、多站、多波束、多链路和多用户自由组网,为卫星移动通信系统协议体制和关键技术的仿真验证提供了一种新的借鉴和参考。     

矩阵实验室（MATLAB）在通信系统仿真中的应用

研究了利用ＭＡＴＬＡＢ进行通信系统仿真及其建模的方法，给出了几个典型仿真范例及仿真结果。分析结果表明ＭＡＴＬＡＢ在通信系统仿真中的重要作用。     

基于设计模式和数据结构的移动通信系统仿真平台优化方法

文章提出了一种基于设计模式和数据结构的移动通信系统仿真平台优化方法,通过该方法可达到优化平台框架、提高仿真效率的目的。文中介绍了设计模式和数据结构在移动通信系统仿真平台中的应用,最后以TD-SCDMA和TD-HSDPA系统共存干扰仿真平台为例,对比了优化前后的仿真曲线和仿真效率等指标,说明了在系统级仿真平台的搭建中使用设计模式和数据结构编程思想的可行性和重要性。     

5G环境下系统级仿真建模与关键技术评估

根据5G关键技术特征给出了5G系统仿真场景,并提出了一种基于5G系统仿真平台的仿真建模及实现方法。运用动态仿真建模、计算资源虚拟化管理、多核并行仿真以及硬件加速仿真技术建设系统仿真平台,对5G候选关键技术进行评估,可以解决由于5G高复杂度及多变的仿真环境带来的部分问题,并能够提高仿真效率,增强5G系统仿真平台的扩展性。     

IMT—2000CDMA宏小区蜂窝无线网络的仿真

ＩＭＴ－２０００ＣＤＭＡ宏小区蜂窝无线网络的仿真,是为评估当前在第三代移动通信系统中较具实力的Ｗ－ＣＤＭＡ和ｃｄｍａ２０００技术而开发的。仿真包括链路级和系统仿真两部分,主要分析研究、验证了评估了两种ＣＤＭＡ无线传输技术的性能以及ＣＤＭＡ无线网络的频谱效率／系统容量。     

LTE系统仿真平台设计及其调度算法性能验证

系统级仿真平台是实现LTE算法研究和验证,完成LTE系统性能评估和优化的重要方面。基于3GPP相关协议和标准,对LTE系统级仿真平台进行研究和设计。利用MATLAB模拟了实际的多用户蜂窝环境,搭建了功能完整的仿真平台,同时采用MEX技术提高了系统的仿真效率。利用文中设计的仿真平台就三种典型的资源调度算法进行性能仿真,仿真结果与理论分析相符,进一步验证了平台的有效性。     

平台罗经系统参数优化设计

平台罗经控制方案中参数的选取会直接影响系统的动态性能。由于航过程中舰艇的机动不可避免，所以进行参数优化设计使系统具有良好的动态性能，就成为一个迫切需要解决的问题。本文利用ＩＴＡＥ准则对系统参数进行了优化并给出了仿真结果。     

一种数模混合SoC的系统级后仿真验证平台

针对传统大规模数模混合SoC后仿真验证过慢的问题,提出了一种数模混合SoC系统级后仿真验证平台。该平台充分利用主流EDA工具,在传统Verilog-cdl后仿真验证平台的基础上,将原本网表中耗时长的模块用Verilog模型替换,使用Verilog-cdl-Verilog仿真方法,明显加快了仿真速度。从验证环境搭建、系统脚本设计、仿真接口设计三个方面详述了仿真平台的设计流程,并通过指令集功能的仿真实现,证明了平台的可行性和可靠性。该验证平台有助于缩短大规模数模混合SoC的开发周期。     

基于SEWES的机载传感器建模与仿真

为支撑机载综合射频传感器的作战需求分析及型号研制,对飞机平台、机载雷达、机载电子战系统和射频环境进行建模,进而在传感器与电子战仿真系统(SEWES)平台上构建一套航空传感器仿真系统。该仿真系统由传感器及环境分系统、环境部署分系统、数据记录及显示分系统、主控分系统构成。通过空空2对2规模的电子对抗实例,验证了该仿真系统的可信性与实用性,从而为机载综合射频传感器型号研制全过程仿真提供了可信的仿真平台,并可辅助进行相关协同技术的仿真研究。     

LTE系统级仿真的关键技术与研究

以3GPP在技术规范中对LTE系统仿真所提要求为标准,对LTE系统级仿真的整体流程与基本框架进行了概括与分析,介绍了链路级映射的2种方法,在分析各功能模块的基础上搭建了系统级仿真平台,实现了LTE的系统级仿真。以下行调度算法为对象,通过系统级仿真平台对轮询、最大载干比和比例公平这3种经典分组调度算法进行了仿真与分析,为LTE系统级仿真平台的进一步完善和发展提供了理论参考。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.