0.94[(Na0.96-xKxLi0.04)0.5Bi0.5]TiO3-0.06Ba(Zr0.055Ti0.945)O3无铅压电陶瓷的压电介电特性

对无铅压电陶瓷0.94[(Na0.96-xKxLi0.04)0.5Bi0.5]TiO3-0.06Ba(Zr0.055Ti0.945)O3的性质随K含量的变化进行了系统研究,获得压电应变常数d33高达185pC/N的0.94[(Na0.80K0.16Li0.04)0.5-Bi0.5]TiO3-0.06Ba(Zr0.055Ti0.945)O3压电陶瓷.随着K掺杂量的增加,该陶瓷材料的介电温谱峰值向右明显移动,其介电峰温度明显升高.     

无铅压电陶瓷K0.5Na0.5NbO3-BiFeO3的烧结工艺与压电性能研究

采用传统常压固相烧结工艺制备了掺杂0.8at%BiFeO₃(BF)的K_0.5Na_0.5NbO₃(KNN) 无铅压电陶瓷,着重研究了烧结温度与保温时间对陶瓷的晶体结构、相转变、致密度与压电、介电性能的影响. 研究结果表明, 所有陶瓷样品都为单一的钙钛矿结构, 烧结温度与保温时间对陶瓷样品的室温晶体结构与相转变温度几乎没有影响, 但对陶瓷的表面形貌、密度和压电性能有较大的影响. 当保温时间为3h,在1100℃至1150℃范围内, 随烧结温度的升高,陶瓷的压电常数d33、平面机电耦合系数Kp及机械品质因数Qm均一直升高, 介电损耗tanδ则显著降低. 当烧结温度为1150℃时, 随保温时间的增加, 陶瓷的压电性能先显著提高后基本保持不变. 1150℃保温2h烧结的陶瓷获得良好的性能：密度ρ=4.50g/cm³（致密度为95.63%）, d₃₃=132pC/N, K_p=45%, Q_m=333.73, tanδ=2.39%.     

光声效应在研究铁电陶瓷相变中的应用

本文报导了用光声技术研究铁电陶瓷 Pb(Zr,Ti,Sn)O_3(PSZT),透明 PLZT 以及 Li_(1-x)Na_xNbO_3(LNN)的相变,清楚地揭示了这些陶瓷所呈现的不同相变特性以及相变点随组分的变化,与某些常规研究方法相比较,显示了在相变点附近,光声信号的幅度和相位的变化非常灵敏。并用热力学解释了实验结果。     

水热合成无铅压电陶瓷粉体

简述了水热法在国内外的发展现状,重点介绍了目前水热法制备BaTiO3、(K1-xNax)NbO3、Na0.5Bi0.5-TiO3以及Bi4Ti3O12等4种无铅压电陶瓷粉体的工艺过程,及其在制备4种粉体过程中对粉体尺寸、形貌的控制和独特的优势,同时简要评述了近年来微波水热法制备无铅压电陶瓷粉体的新工艺进展,指出水热法在制备无铅压电陶瓷方面具有一定的优势,可以制备出纯度和结晶性高、颗粒分布均匀、尺寸和形貌可控的高性能简单化合物无铅压电陶瓷粉体。下一步研究的重点和难点为合成组分可控的复杂化合物,为真正实现压电陶瓷和器件的无铅化革命作贡献。     

(Na0.5K0.5)NbO3基无铅压电陶瓷的研究

由于钙钛矿结构无铅压电陶瓷具有高的压电性能，已成为无铅压电陶瓷研究的热点．本文综述了钙钛矿结构无铅压电陶瓷（Na0．5K0.5）NbO3的研究进展和趋势．重点从添加第二组元、添加助烧剂、取代改性和制备方法四个方面，归纳和分析了（Na0．5K0.5）NbO3基无铅压电陶瓷的研究开发进展，并对（Na0.5K0.5）NbO3基无铅压电陶瓷今后的研究和发展提出一些建议．     

Nao．5 Bio．5 TiO3 -Ko．5 Bi0．5 TiO3系铁电体的相变研究

研究了(Na1-xKx)0.5 Bi0．5 TiO3体系x分别为0、0．08、0．16和0．20时陶瓷不同频率下的介电温谱，发现材料为弛豫型铁电体，材料的介电谱在室温到500℃的温度范围内存在一个介电常数-温度“台阶”，一个介电常数-温度峰和一个介电损耗一温度峰，通过分析陶瓷不同温度下的电滞回线验证陶瓷在升温过程中产生了铁电-反铁电-顺电相变，采用铁电体成分起伏理论和内电场理论解释了这类弛豫型铁电体相变的原因。     

Effect of germanium doping on pyroelectric and piezoelectric properties of Sn(2)P(2)S(6) single crystal

The results of the search for dopants to optimize the ferroelectric phase transition temperature and pyroelectric and piezoelectric properties of Sn(2)P(2)S(6) crystals are reported. Among all dopants only germanium causes a pronounced shift of the phase transition toward higher temperatures. The highest Curie temperature achieved by Ge doping is as high as 88 degrees C. The major advantage of the Ge-doped crystals as compared to pure Sn(2)P(2)S(6) is that the hydrostatic piezoelectric and pyroelectric response is kept high in a wider temperature range with much lower temperature dependence. The effects of the doping on pyroelectric and piezoelectric properties, characterizing the sensitivity of the material to thermal and hydroacoustic excitation, are discussed.     

Ba_(0.7)Sr_(0.3)TiO_3及其含Pb弥散相铁电体介电性能的研究

用固相反应法制备了Ba_(0.7)Sr_(0.3)TiO_3及其含Pb钛酸锶钡(BPST)陶瓷,运用修正的Smolenski的成分起伏理论和居里外斯定律,结合介电常数温度谱,研究了钙钛矿结构的BST及铅取代的钛酸锶铅钡(BPST)的弥散相,对其相变行为进行了分析,得出了的一些铁电模型参数.结果表明,该系列样品在弥散相变区的弥散指数α为1.29～1.88,相变区间为13.4～22.8℃;在顺电相其居里常量为1.25×10~5～1.47×10~5K数量级.当Pb含量为0.1(即Ba_(0.6)Pb_(0.1)TiO_3)时,居里峰较宽,弥散相明显,故具有较高的调谐温度稳定性.另外铅的加入提高了铁电体的相变温度,从44℃上升到175℃.     

Nonlinear dielectric response of AgNb(1-x)Ta(x)O3 in the vicinity of diffuse phase transitions

Linear and nonlinear dielectric studies of AgNb(1-x)Ta(x)O(3) (ATN) ceramics (x ≤ 0.6) were carried out in the temperature range of 80 to 673K. The temperature dependences of third-order nonlinear electric susceptibility X3'(T) exhibit two distinct maxima: at the temperature of the weak ferroelectric phase appearance, M(1)-M(2) transition, and at the temperature of the Nb/Ta ion dynamics freezing, Tf. For AgNbO3, they appear at 325K and 448K, respectively. With increasing Ta concentration, both maxima shift toward lower temperature: 4K/%Ta (M(1)-M(2)) and 5.6K/%Ta (T(f)). The X3' (T) maxima indicate changes of the Nb/Ta ion dynamics and their contribution to electric susceptibility. At T(f), a partial freezing of the Nb/Ta ion displacements to the disordered antipolar, antiferroelectric array takes place. At the M(1)-M(2) transition, further freezing of Nb/Ta displacements to polar weak relaxor ferroelectric or dipolar glass transition occurs. This polar state coexists with the ground antiferroelectric state. Studies of the aging process showed that below T(f) the aging influence on electric susceptibility is substantial, whereas above Tf it may be neglected. This means that for ATN ceramics in the concentration range used for applications, there is no aging process in the room temperature region, which is an additional advantage of this system.