（1－x）Bi0．5（Na0．8K0．2）0．5TiO3－xKSbO3压电陶瓷的制备及性能研究

采用传统固相法制备了新型（1－x）Bi0．5（Na0．8K0．2）0．5TiO3－xKSbO3无铅压电陶瓷,利用XRD、 SEM等测试技术表征了该陶瓷的晶体结构、表面形貌、压电和介电性能。研究结果表明,在所研究的组成范围内陶瓷材料均能形成纯的钙钛矿固溶体。在室温下,当KSbO3的掺杂量为1％时,该体系表现出较好的介电性能：εr和tanδ分别为2231和0．055。     

Sm掺杂对Ba4La19.33Ti18O54陶瓷结构和介电性能的影响分析

主要研究了不同Sm掺杂浓度对Ba4La19.33Ti18O54陶瓷的微波介电性能和微观结构的影响。首先利用常规固相反应技术制备了Sm含量y分别为0、0．1、0．3、0．5和0．7的5种Bat（La1-y,Smy）9.33T18O54陶瓷样品;室温下在0．373．0GHz频率范围内,利用网格分析仪测量了这些样品的介电常数和介电损耗因子;结果表明随着Sm掺杂含量的增大,样品介电损耗明显减小,而介电常数只有微小减少。当Sm掺杂含量y=0．5时,样品的介电性能最好。此外,还利用X射线衍射仪和扫描电子显微镜研究了样品的微观结构及随微波介电性能的变化。     

0.995Bi0.5(Na0.8K0.2)0.5TiO3-0.005(LiyK1-y)SbO3压电陶瓷的制备及性能研究

采用传统固相法制备了新型0.995Bi0.5(Na0.8K0.2)0.5TiO3-0.005(Li y K1-y)SbO3无铅压电陶瓷,利用XRD、SEM等测试技术表征了该陶瓷的晶体结构、表面形貌、压电和介电性能。研究结果表明,在所研究的组成范围内陶瓷材料均能形成纯的钙钛矿固溶体。压电性能随y的增加先增加后减少,在y=10%时压电常数及机电耦合系数达到最大值(d33=111 pC/N,k p=0.220)。     

Y2O3掺杂对(Bi0.5Na0.5)0.94Ba0.06TiO3无铅压电陶瓷性能的影响研究

采用传统固相反应法制备了Y2O3掺杂(Bi0.5Na0.5)0.94Ba0.06TiO3(简写为BNBT6)陶瓷[简称为BNBT6-x(wt%)Y2O3陶瓷].研究了Y2O3 (0.2wt%～0.8wt%)掺杂对BNBT6陶瓷的结构、介电、压电、铁电性能的影响.结果表明,所有Y2O3掺杂陶瓷样品均形成了单一的钙钛矿结构;陶瓷的介电、压电、铁电性能受Y2O3掺杂的影响较为显著:当掺杂0.4wt%Y2O3时,10 kHz频率下测得的室温εr达到1530,且tanδ较小,为0.050,d33达到152 pC/N,kp=0.27,Qm=134.掺杂0.2wt%的Y2O3时BNBT6陶瓷的d33为145 pC/N,kp增大到0.29,Qm达到173,tanδ为0.053;掺杂适量Y2O3的BNBT6陶瓷铁电性能也得到改善.     

Co2O3掺杂对(Na0.8K0.2)0.5Bi0.5TiO3陶瓷结构与电性能的影响

采用传统固相法制备了(Na0.8K0.2)0.5Bi0.5TiO3+xmol%Co3+(BNKT-xCo,x=0-8)无铅压电陶瓷,研究了Co2O3掺杂对BNKT陶瓷的显微结构与电学性能的影响。研究表明:适量的Co2O3掺杂促进了晶粒生长,纯BNKT陶瓷样品在介电温谱上有2个介电反常峰Td和Tm,Co2O3掺杂后使所有陶瓷样品的第一个介电反常峰Td消失,表明Co3+抑制铁电-反铁电相变。室温下样品的介电、铁电和压电性能表明Co2O3起硬性掺杂效应。当x=7时陶瓷样品电性能最佳,其中机械品质因子Qm=498,介电损耗tanδ=2.3%(1kHz),压电常数d33=103pC/N,平面机电耦合系数kp=27%。     

Na0.5Bi0.5TiO3-Ba0.5Sr0.5Nb2O6无铅压电陶瓷的研究

采用固相法制备了(1-x)(Na0.5Bi0.5)TiO3-xBa0.5Sr0.5Nb2O6(0≤x≤1.0％)(简称(1-x)NBT-xBSN)无铅压电陶瓷,研究了不同BSN含量(x=0,0.1％,0.3％,0.5％,0.7％,1.0％,摩尔分数)样品的物相组成、显微结构及电性能.结果表明:所有样品均为纯钙钛矿结构,随掺杂量x的增加,陶瓷的相对密度pr、压电常数d33和机电耦合系数kp均先增大后降低,机械品质因子Qm和退极化温度Td则逐渐下降.该体系陶瓷具有弥散相变特征,弥散指数介于1.6～1.7.当x=0.5％时,陶瓷获得最佳性能:d33=92pC/N,kp=0.164,Qm=89,εr=650,tanδ=5.47％,pr=96.5％.     

Na0.5Bi0.5TiO3-BaTiO3系无铅压电陶瓷的弛豫相变特征和铁电性能

研究了(1-x)Na0.5Bi0.5TiO3-BaTiO3系无铅压电陶瓷的弛豫相变特性和铁电性能。X射线衍射分析表明：当0．06≤x≤0．10时。该体系陶瓷具有三方、四方相共存的晶体结构。通过测试材料的介电温谱分析发现：当x≥0．10时,该体系陶瓷在200℃以上具有弛豫铁电体的特征。通过测试样品在不同温度的电滞回线。认为该体系材料在一定组成范围内随温度的升高存在反铁电中间相。通过研究样品的铁电性能发现：当x=0．10时,材料的矫顽场达到极小值。     

Ca_(0.6)La_(0.8/3)TiO_3-Li_(0.5)Sm_(0.5)TiO_3复合微波陶瓷的介电性能

采用传统固相合成法制备了xCa0.6La0.8/3TiO3-(1-x)(Li0.5Sm0.5)TiO3(CLT-LST)系列微波介质陶瓷材料,研究了该系列微波介质陶瓷的物相结构、表面形貌、介电性能。实验发现:随着Ca0.6La0.8/3TiO3含量的增多,CLT-LST样品XRD峰轻微左移。陶瓷组成对微波介电性能影响显著,复合体系CLT-LST的微波介电性能随着x值不同而连续变化:当x从0.2上升到0.6时,介电常数(εr)逐步增大,在x=(0.4~0.6),εr变化趋于稳定,达到较佳值;品质因数(Q·f)则先减小后增大再迅速减小;谐振频率温度系数(τf)逐渐从负值向正值方向移动。当复合体系组成为0.4Ca0.6La0.8/3TiO3-0.6(Li0.5Sm0.5)TiO3时,在1 250℃烧结4h所得到的微波介电性能较佳,εr=125;Q·f=2 680GHz;τf=7.0×106/℃。     

(1-x)Na0.5 Bi0.5 TiO3-xNaNbO3系无铅压电陶瓷的机电性能

采用传统陶瓷的制备方法,制备了(1-x)Na0.5Bi0.5TiO3-xNaNbO3(r=0～0．08)压电陶瓷。X射线衍射分析表明：所研究的组成均能够形成纯钙钛矿(ABOx)型固溶体。不同频率下陶瓷材料的介电常数-温度曲线显示该体系材料具有典型的弛豫铁电体特征,且随着x的增加,其弛豫性特征愈明显。室温下陶瓷材料的饱和电滞回线表明：所研究组成均为铁电体．材料的剩余极化强度P1在x=0．02时具有最大值。检测了不同组成陶瓷的雎电性能,发现材料的压电常数d33和平面机电耦合系数Kp随着x值的增加先增加后降低,在x=0．02时．陶瓷的d33=88pC／N,Kp=0．1792,为所研究组成中的最大值．材料的介电常数εI3/ε0和介电损耗tanδ则随x值的增加而增加。     

Ba0.5 Sr0.5 TiO3/PMMA复合材料介电性能研究

采用溶胶凝胶法（sol-gel）制备了Ba0．5Sr0．5TiO3／PMMA复合材料粉体。应用红外光谱（IR）、偏光显微镜（PLM）、扫描电镜（SEM）等分析手段，对样品进行了表征与分析，研究了乙烯基三乙氧基硅烷偶联剂在BST55／PMMA复合材料制备过程中起的桥联作用，并讨论了MMA和BST55物质的量比与其介电性能的关系。结果表明，在凝胶化过程中，适量的偶联剂不仅起着交联剂的作用，而且能改善复合材料的粒子聚集态；而复合材料的介电常数远远低于BST55陶瓷，且随着PMMA含量的增加而有所降低。     

(1-x)KNN-xNKBT无铅压电陶瓷的结构及其电性能研究

采用传统固相法制备了(1-x)K0.5Na0.5NbO3-x(Na0.8K0.2)0.5Bi0.5TiO3(x=0-5%)无铅压电陶瓷,研究了(Na0.8K0.2)0.5Bi0.5TiO3的不同引入量对其物相结构、显微形貌、介电性能以及压电性能的影响。结果表明:所有样品都具有钙钛矿结构;随着x的增加,室温下样品从正交相逐渐向四方相过渡并且居里温度向低温方向移动,样品的压电常数d33与机电耦合系数kp均先升高后降低。该体系多晶型转变PPT位于2%≤x≤3%,当x=3%时,样品的压电性能达到最佳,其中:d33=189pC/N,kp=41%,Qm=96,tanδ=0.028。     

(K0.5Na0.5)(TaxNb1-x)O3无铅压电陶瓷的性能特征

采用传统电子陶瓷制备工艺制备了(K0.5Na0.5)(TaxNb1-x)O3无铅压电陶瓷。研究了不同Ta含量下(K0.5Na0.5)(TaxNb1-x)O3陶瓷的晶相组成及性能特征。结果表明,(K0.5Na0.5)(TaxNb1-x)O3陶瓷在低Ta含量时形成单一斜方相固溶体,但Ta含量达到0.08mol后则有K6Ta10.8O30次晶相产生。随着Ta的加入,陶瓷的体积密度逐渐增大,居里温度(Tc)逐渐降低。当Ta含量为0.08mol时陶瓷具有良好的铁电、压电性能和介电稳定性能,其压电常数d33为76pC/N。     

High-temperature solid-state reactions in the (1-x)Na0.5Bi0.5TiO3–xSrTiO3 system

High-temperature reactions during the solid-state synthesis of samples from the (1-x)Na_0.5Bi_0.5TiO₃–xSrTiO₃ system were investigated. Due to the number of chemically different elements, the processing of these ceramics is delicate and requires several firing steps under specific conditions to obtain phase-pure samples. Sintering in an air atmosphere resulted in a macroscopically inhomogeneous microstructure, which is a consequence of incomplete reaction between different secondary phases. However, prolongation of the sintering time aggregated the pores in the sample, while at a higher firing temperature the sample’s secondary phase melted. As a result, the nominal composition was altered, leading to the formation of the Na₂Ti₆O₁₃ secondary phase. Sintering under an increased oxygen pressure of 1 MPa limited the evaporation of the secondary phase. This allowed the completion of the reaction, forming a homogeneous and dense sample. The study provides a set of experimental conditions for the successful preparation of ceramics from the investigated system.     

准同型相界附近(Na1-xKx)0.5Bi0.5TiO3的制备及性能研究

利用固相法制备了（Na1-xKx）0.5Bi0.5TiO3系压电陶瓷，XRD分析表明所得陶瓷样品为纯的钙钛矿结构，其准同型相界在x=0．18～0．22之间；电子探针显微分析显示所做陶瓷样品晶粒发育良好，具有规则的外形和明显的晶界；实验所得陶瓷样品损耗tanδ最大不超过5％，最好的压电常数d33=153 pC／N，平面机电耦合系数kp=0．299，它们分别出现在x=0．22和0．20处。     

High energy storage properties of lead-free Mn-doped (1-x)AgNbO3-xBi0.5Na0.5TiO3 antiferroelectric ceramics

In this work, 0.2 wt.% Mn-doped (1-x)AgNbO₃-xBi_0.5Na_0.5TiO₃ (x = 0.00–0.04) ceramics were synthesized via solid state reaction method in flowing oxygen. The evolution of microstructure, phase transition and energy storage properties were investigated to evaluate the potential as high energy storage capacitors. Relaxor ferroelectric Bi_0.5Na_0.5TiO₃ was introduced to stabilize the antiferroelectric state through modulating the M₁-M₂ phase transition. Enhanced energy storage performance was achieved for the 3 mol% Bi_0.5Na_0.5TiO₃ doped AgNbO₃ ceramic with high recoverable energy density of 3.4 J/cm³ and energy efficiency of 62% under an applied field of 220 kV/cm. The improved energy storage performance can be attributed to the stabilized antiferroelectricity and decreased electrical hysteresis ΔE. In addition, the ceramics also displayed excellent thermal stability with low energy density variation (<6%) over a wide temperature range of 20−80 °C. These results indicate that Mn-doped (1-x)AgNbO₃-xBi_0.5Na_0.5TiO₃ ceramics are highly efficient lead-free antiferroelectric materials for potential application in high energy storage capacitors.     

Enhanced energy storage performance and thermal stability in relaxor ferroelectric (1-x)BiFeO3-x(0.85BaTiO3-0.15Bi(Sn0.5Zn0.5)O3) ceramics

Lead-free (1-x)BiFeO₃-x(0.85BaTiO₃-0.15Bi(Sn_0.5Zn_0.5)O₃) [(1-x)BF-x(BT-BSZ), x=0.45-0.7] ceramic samples were prepared by solid phase sintering. It is revealed that the pure single-phase perovskite structure can be obtained in samples with x ≥ 0.6. With increasing x, the measured ferroelectric hysteresis loop becomes gradually slimmed in accompanying with reduced remnant polarization, and a clear ferroelectric-relaxor transition at x = 0.65 is identified. Furthermore, the measured electric breakdown strength can be significantly enhanced with increasing x, and the optimal energy storage performance is achieved at x = 0.65, characterized by the recoverable energy storage density up to ≈3.06 J/cm³ and energy storage efficiency as high as ≈92 %. Excellent temperature stability (25°C–110°C) and fatigue endurance (>10⁵ cycles) for energy storage are demonstrated. Our results suggest that the BF-based relaxor ceramics can be tailored for promising applications in high energy storage devices.     

Large electrostrain and structural evolution in (1-x)[0.94Bi0.5Na0.5TiO3-0.06BaTiO3]-xAgNbO3 ceramics

A lead-free system formulated as (1-x)[0.94Bi_0.5Na_0.5TiO₃-0.06BaTiO₃]-xAgNbO₃ exhibits an electrostrain of 0.50% at 80 kV/cm and a maximum d₃₃^* of 721 pm/V at 60 kV/cm for x=0.3. The incorporation of AgNbO₃ shifts the relaxor-ferroelectric phase transformation temperature (T_F-R) to room temperature and lowers the energy barrier of the field-induced phase transformation. Furthermore, the in-situ electric field dependent high-energy synchrotron X-ray diffraction (SXRD) technique reveals that the sample x=0.03 transforms from dominant P4bm phase to a phase mixture of R3c + P4mm at 55 kV/cm during the electric field loading, and returns to initial dominant P4bm phase at 15 kV/cm during the unloading cycle of the electric field. Furthermore, it can be demonstrated that the electric field induced-phase transition in NBTBT-3AN occurs in the whole sample, rather than in the single direction of electric field. Therefore, the electrocstrain in NBTBT-3AN is more uniform, which would be beneficial to its actuator applications.     

Temperature-insensitive dielectric and piezoelectric properties in (1-x)K0.5Na0.5Nb0.997Cu0.0075O3-xSrZrO3 ceramics

Systematic investigation on phase transition, dielectric and piezoelectric properties of (1-x)K_0.5Na_0.5Nb_0.997Cu_0.0075O₃-xSrZrO₃ (x = 0, 0.03, 0.06, 0.09, 0.12, 0.15, abbreviated as KNNC-100xSZ) ceramics was carried out. Due to the coexistence of orthorhombic and tetragonal phase in a wide temperature range, a diffused polymorphic phase transition (PPT) region was achieved in KNNC with x ≥ 0.06. KNNC-12SZ ceramics exhibited high dielectric permittivity (∼1679), low dielectric loss (∼0.02) and small variation (Δe'/ε'_25 °C ≤ 15%) in dielectric permittivity from −78 °C to 237.3 °C. KNNC-6SZ ceramic possessed a high level of unipolar strain (∼0.15%) and maintained a smaller variation of ±12% under the corresponding electric field of 60 kV cm⁻¹ at 10 Hz from 25 °C to 175 °C. d₃₃^*, which was calculated according to the unipolar strain at 60 kV cm⁻¹, was 230 pm V⁻¹ and remained stable below 100 °C. Therefore, our work provided a new promising candidate for temperature-insensitive capacitors and piezoelectric actuators.