Study of structure and properties of ZnO–Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>–P<Subscript>2</Subscript>O<Subscript>5</Subscript> glasses

Glasses of the ternary system ZnO–Bi₂O₃–P₂O₅ were prepared and studied in two compositional series 50ZnO–xBi₂O₃–(50 − x)P₂O₅ and (50 − y)ZnO–yBi₂O₃–50P₂O₅. Two distinct glass-forming regions were found in the 50ZnO–xBi₂O₃–(50 − x)P₂O₅ glass series with x = 0–10 and 20–35 mol.% Bi₂O₃. All prepared Bi₂O₃-containing glasses reveal a high chemical durability. Small additions of Bi₂O₃ (∼5 mol.%) improve thermal stability of glasses. All glasses crystallize on heating within the temperature range of 505–583 °C. Structural studies by Raman and ³¹P MAS NMR spectroscopies showed the rapid depolymerisation of phosphate chains within the first region with x = 0–15 and the presence of isolated Q⁰ phosphate units within the second region with x = 20–35. Raman studies showed that bismuth is incorporated in the glass structure in BiO₆ units and their vibrational bands were observed within the spectral region of 350–700 cm⁻¹. The evolution of properties and the spectroscopic data are both in accordance with a network former effect of Bi₂O₃.     

Effect of secondary heat treatment on the spectroscopic properties of Na<Subscript>2</Subscript>O-Nb<Subscript>2</Subscript>O<Subscript>5</Subscript>-P<Subscript>2</Subscript>O<Subscript>5</Subscript> glasses

We have studied the optical absorption and luminescence spectra of 45Na₂O · xNb₂O₅ · (55 − x)P₂O₅ glasses containing 5, 10, 20, 25, 30, and 35 mol % Nb₂O₅. The results indicate that the absorption band around 26000 cm⁻¹, responsible for the yellow color of the glasses, is due to the [Nb^(5+)--O⁻] center and disappears upon secondary heat treatment. Heat treatment of europium-doped glasses increases the concentration of Eu³⁺ centers in an asymmetric environment, which is accompanied by an increase in luminescence efficiency. The reason for this is that the Eu³⁺ ions are located outside the niobate subsystem of the glass matrix. The europium in the glasses studied acts as a protector ion.     

Spectroscopic studies of TeO<Subscript>2</Subscript>–ZnO–Er<Subscript>2</Subscript>O<Subscript>3</Subscript> glass system

Series of glass based on the (80 − x)TeO₂–20ZnO–(x)Er₂O₃ system (0.5 mol% ≤ x ≤ 2.5 mol%) has successfully been made by melt quenching technique. The optical properties of glass have been investigated by means of IR and Raman spectroscopy. It is observed that as the Er₂O₃ content is being increased, the sharp IR absorption peaks are consistently shifted from 650 to 672 cm⁻¹ while the Raman shift intensity around 640–670 cm⁻¹ is decreases but increases around 720–740 cm⁻¹. It is found out that both phenomenons are related to the structural changes between the stretching vibration mode of TeO₄ tbp and TeO₃ tp, and bending vibration mode of Te–O bonds in the glass linkages.     

Structural changes induced by Fe<Subscript>2</Subscript>O<Subscript>3</Subscript> addition in strontium-borate glass matrix

Glasses of the xFe₂O₃·(100−x)[B₂O₃·SrO] system, with 0 ≤ x ≤ 30 mol% were studied by X-ray diffraction, density, optical microscopy and FT-IR spectroscopy measurements. The X-ray patterns for the prepared system show that vitreous phase is present only in the sample with x < 40 mol%. For x ≥ 40 mol% in the studied samples is evidenced crystalline phase of Fe₂O₃. SEM measurements for the sample with x = 40 mol% shows that there are formed Fe₂O₃ microcrystallites with 10–20 μm dimension. FT-IR spectroscopy measurements shown that BO₃ and BO₄ are the main structural units of the glass system and the iron ions are located in the glass network.     

Electrical conduction properties of Sr-doped Bi<Subscript>4</Subscript>(SiO<Subscript>4</Subscript>)<Subscript>3</Subscript> with the eulytite-type structure

Electrical conduction in 1 mol% Sr-doped Bi₄(SiO₄)₃ with the eulytite-type structure at elevated temperatures was investigated with conductivity measurements. Conductivity of the material under wet condition was higher than that under dry condition, and were 1.2 × 10⁻⁶ – 9.7 × 10⁻⁵ S cm⁻¹ at 500–850 ^°C. From H/D isotope effects and p(O₂)-dependencies of the conductivity, it was found that the Sr-doped Bi₄(SiO₄)₃ exhibited protonic conduction at all the temperatures investigated while contribution of p-type conduction became significant with increasing p(O₂) and/or temperature. Protonic and p-type conductions in the material were discussed in terms of defect equilibria.     

Formation and properties of SnO–MgO–P<Subscript>2</Subscript>O<Subscript>5</Subscript> glasses

A new glass system SnO–MgO–P₂O₅ with low viscosity has been developed by a melt-quenching method. Formation, thermal properties, and chemical durability of these glasses have been investigated. For a constant P₂O₅ concentration, the glass formation ability is enhanced with the increasing Sn/(Sn + Mg) ratio. The glasses exhibit low glass transition temperature (T _g = 270–400 °C), low dilatometric softening temperature (T _DS = 290–420 °C), and high thermal expansion coefficient (CTE = 110–160 × 10⁻⁷ K⁻¹). With the increasing Sn/(Sn + Mg) ratio, T _g and T _DS decrease, and CTE increases. When Sn/(Sn + Mg) ratio is varied, the relationship between chemical durability and thermal properties of the present glasses is not consistent with what expected in general cases. It is noted that the glasses with 32–32.5 mol% P₂O₅ exhibit excellent chemical durability and tunable T _g, T _DS, and CTE (by varying Sn/(Sn + Mg) ratio).     

Effect of annealing on d.c. conductivity of V2O5-SnO-TeO2 glasses

The d.c. conductivity (σ) of V₂O₅-SnO-TeO₂ glasses prepared by the press-quenching method was studied at temperatures from room temperature (RT) to 473 K, and the effect of annealing on σ was investigated. The conductivity of 50V₂O₅·20SnO·30TeO₂ glass was determined to be 3.98×10⁻⁴ Scm⁻¹ at 473 K and was unchanged for annealing (6–48 h) at 493 K, lower than T_g = 501 K, while its density increased with annealing time. These glasses were found to be n-type semiconductors, and the conduction was confirmed to be due to adiabatic small polaron hopping for V₂O₅ ≧ 50 mol%, and non-adiabatic for V₂O₅ < 50 mol%. The activation energy for conduction, W, decreased with annealing time. Variations in oxygen molar volume of the glasses with annealing time inferred a change in glass structure, from loosely to closely packed, resulting in a decrease in vanadium ion spacing with annealing. This caused an increase in the polaron band width, producing a decrease in polaron hopping energy and W. The effect of annealing time on the density of 50V₂O₅·20SnO·30TeO₂ glass was explained adequately by Winter's formula.     

Manifestation of Nd ions on the structure,Raman and IR spectra of (TeO<Subscript>2</Subscript>-MoO-Nd<Subscript>2</Subscript>O<Subscript>3</Subscript>) glasses

The structure of [80TeO₂ + (20–x)MoO + xNd₂O₃] glasses, with x = 0, 4, 6, 10 and 12 mol%, is studied in this work. Raman scattering in the spectral range (−2000 to 3500 cm⁻¹) and IR absorption spectra have been measured for crystalline TeO₂ and glasses, and their assignments were discussed and compared. Many vibrational modes were found active in both Raman and IR and their assignments for crystalline TeO₂ and for the glasses were discussed in relation to the tetragonal structure of crystalline α -TeO₂. Nd₂O₃ was found to completely eliminate diffuse scattering and enhance the Raman scattering intensity. Anti-stokes Raman bands in the range −1460 cm^{− 1} to −1975 cm^{− 1} were observed for both (30Li₂O + 70B₂O₃+ xNd₂O₃) glasses and [80TeO₂ + (20−x)MoO + xNd₂O₃] glasses and were attributed to some emission processes due to the doping of the glasses with Nd₂O₃.     

Synthesis and structural studies of Na<Subscript>2</Subscript>O-ZnO-ZnF<Subscript>2</Subscript>-B<Subscript>2</Subscript>O<Subscript>3</Subscript> oxyfluoride glasses

This paper describes the synthesis and spectroscopic studies of the glass system, 20Na₂O-(20-x) ZnO-xZnF₂-60B₂O₃(x = 0, 5, 10, 15, 20), prepared by melt quenching method. The analyses of DSC and XRD did not show the crystallinity of the glass sample. ¹¹B MAS-NMR shows the presence of sharp peak around −14 ppm. From the IR studies, the broadening of the peak around 1200–1400 and 800–1100 cm⁻¹ shows the presence of mixed linkages like B-O-B, B-O-Zn in the network.     

Enhancement in electrical conductivity of Li<Subscript>2</Subscript>O: B<Subscript>2</Subscript>O<Subscript>3</Subscript>: V<Subscript>2</Subscript>O<Subscript>5</Subscript> glasses

The study of electrical conductivity of 30Li₂O: (70 − x) B₂O₃: xV₂O₅ glass samples has been carried out. The results have been explained by dividing the temperature range into two regions. In region I, conductivity shows Arrhenius behaviour for all the samples. The conductivity increases with addition of V₂O₅. The results have been explained in the light of Anderson and Stuart Model. In region II, an anomalous enhancement in the conductivity is observed for all the samples up to certain temperature beyond which the conductivity decreases. The enhancement in the conductivity in the annealed glass sample has been attributed to nanocrystallization.     

Temperature-stable and low loss Fe-containing dielectrics in BaO-Ln<Subscript>2</Subscript>O<Subscript>3</Subscript>-Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>-Ta<Subscript>2</Subscript>O<Subscript>5</Subscript> system

Polycrystalline samples of Ba₄Ln₂Fe₂Ta₈O₃₀ (Ln = La and Nd) were prepared by a high temperature solid-state reaction technique. The formation, structure, dielectric and ferroelectric properties of the compounds were studied. Both compounds are found to be paraelectrics with filled tetragonal tungsten bronze (TB) structure at room temperature. Dielectric measurements revealed that the present ceramics have exceptional temperature stability, a relatively small temperature coefficient of dielectric constant (τ _ε ) of −25 and −58 ppm/°C, with a high dielectric constant of 118 and 96 together with a low dielectric loss of 1.2 × 10⁻³ and 2.8 × 10⁻³ (at 1 MHz) for Ba₄La₂Fe₂Ta₈O₃₀ and Ba₄Nd₂Fe₂Ta₈O₃₀, respectively. The measured dielectric properties indicate that both materials are possible candidates for the fabrication of discrete multilayer capacitors in microelectronic technology.     

Electrical properties of Sb2O3–CaO–V2O5 glasses and glass-ceramics

The d.c. conductivity (σ) of (a) glasses prepared by the press-quenching method and (b) glass-ceramics (crystallized glass) produced by post-heat treatment was investigated in the system Sb₂O₃–CaO–V₂O₅ and their conduction mechanism was studied. The glasses were n-type semiconductors with σ = 2.6 × 10^-6 ∼ 2.8 × 10^-5 S cm^-1 at 333 K for varying glass compositions. The conduction was attributed to small polaron hopping in the adiabatic regime. The estimated carrier density was 1.7 ∼ 3.8 × 10²¹ cm^-3 for V₂O₅ = 70 ∼ 80 mol% and the mobility was 3.5 × 10^-9 to 6.9 × 10^-8 cm² V^-1 s^-1. Crystallization raised the conductivity by a factor of 10³. The crystalline product in the glass-ceramics was Ca_0.17V₂O₅. The glass-ceramics were n-type semiconductors, and the conduction was interpreted by a superposition of the small polaron hopping in the crystalline and glassy phases. This revised version was published online in November 2006 with corrections to the Cover Date.     

Characterization and electrical properties of semiconducting Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>-Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>-K<Subscript>2</Subscript>B<Subscript>4</Subscript>O<Subscript>7</Subscript> glasses

Semiconducting glasses of the Fe₂O₃-Bi₂O₃-K₂B₄O₇ system were prepared by the press-quenching method and their dc conductivity in the temperature range 223–393 K was measured. The glass transition temperature values (T_g) of the present glasses were larger than those of tellurite glasses. This indicates a higher thermal stability of the glass in the present system. The density for these glasses was consistent with the ionic size, atomic weight and amount of different elements in the glasses. Mössbauer results revealed that the relative fraction of Fe increases with increasing Fe₂O₃ content. Electrical conductivity showed a similar composition dependency as the fraction of Fe. The glasses had conductivities ranging from 10 to 10 Scm at temperatures from 223 to 393 K. Electrical conduction of the glasses was confirmed to be due to non-adiabatic small polaron hopping and the conduction was primarily determined by hopping carrier mobility.     

Influence of Sm substitution on the phase,microstructure and microwave dielectric properties of SrLa<Subscript>4</Subscript>Ti<Subscript>5</Subscript>O<Subscript>17</Subscript>

New dielectric ceramics in the SrLa_4−xSm_xTi₅O₁₇ (0 ≤ x ≤ 4) composition series were prepared through a solid state mixed oxide route to investigate the effect of Sm⁺³ substitution for La⁺³ on the phase, microstructure and microwave dielectric properties. At x = 0–3, all the compositions formed single phase ceramics within the detection limit of in-house X-ray diffraction when sintered in the temperature range 1500–1580 °C. At x = 4, a mixture of Sm₂Ti₂O₇ and SrTiO₃ formed. The maximum Sm⁺³-containing single phase ceramics, SrLaSm₃Ti₅O₁₇, exhibited relative permittivity (ε_r) = 42.6, temperature coefficient of resonant frequency (τ _f ) = −96 ppm/^oC and quality factor (Q _u f _o ) = 7332 GHz. An analysis of results presented here indicates that SrLa_4−xSm_xTi₅O₁₇ ceramics, exhibiting τ _f  ~ 0 and ε_r ~ 53 could be achieved at x ~ 1.4 but at the cost of decrease in Q _u f _o .     

Synthesis of nanocomposites based on MO-Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>-B<Subscript>2</Subscript>O<Subscript>3</Subscript> (M = Ca,Sr, Ba) glasses

This work examines the effect of KBF₄ additions on the crystallization behavior of glasses based on the multicomponent systems MO-Bi₂O₃-B₂O₃ with M = Ca, Sr, and Ba. The glass-ceramic composites obtained contain a δ-Bi₂O₃-based crystalline phase with a crystallite size of ≃7 nm, evenly distributed over the glass matrix. The 400°C electrical conductivity of the nanocomposites reaches 2 × 10⁻⁴ S/cm, and the activation energy is 1.1 eV, typical of anion conduction. These values are comparable to those reported for δ-Bi₂O₃ ceramics.     

Effect of Dy<Subscript>2</Subscript>O<Subscript>3</Subscript> addition on microstructure,electrical properties,and aging behavior of ZnO–V<Subscript>2</Subscript>O<Subscript>5</Subscript>–MnO<Subscript>2</Subscript>–CoO varistor ceramics

The microstructure, electrical properties, and aging behavior of ZnO–V₂O₅–MnO₂–CoO–Dy₂O₃ varistor ceramics were investigated for different contents of Dy₂O₃. The microstructure consisted of ZnO grain as a main phase and secondary phases such as Zn₃(VO₄)₂, ZnV₂O₄, and DyVO₄. The average grain size increased from 7.6 to 10.1 μm and the sintered density slightly increased from 5.53 to 5.57 g/cm³ with the increase of Dy₂O₃ content. The varistor ceramics added with 0.05 mol% Dy₂O₃ exhibited the most nonlinear properties, with nonlinear coefficient of 30, and the highest stability against DC-accelerated aging stress. The Dy₂O₃ acted as an acceptor due to the decrease of donor density in the range of 2.73 × 10¹⁸/cm³ to 1.28 × 10¹⁸/cm³.     

Thermoelectric properties of WO<Subscript>3</Subscript>-based ceramics doped with Co<Subscript>2</Subscript>O<Subscript>3</Subscript>

Tungsten trioxide (WO₃) doped with cobalt sesquioxide (Co₂O₃) was prepared by a conventional mixed oxide processing route and the thermoelectric properties were studied from 300 up to 1,000 K. The addition of Co₂O₃ to WO₃ resulted in an increase in both the grain size and porosity, indicating that Co₂O₃ promotes the grain grown of WO₃. The magnitude of the electrical conductivity (σ) and the absolute value of the Seebeck coefficient (|S|) depended strongly on the Co₂O₃ content. As for the power factor (σS ² ), the 5.0 mol% sample has the maximum value of the power factor which is 0.12 μWm⁻¹K⁻² at 873 K.     

Frequency-dependent dielectric properties and electrical conductivity of CdIn<Subscript>2</Subscript>S<Subscript>4</Subscript> single crystals

The real (ɛ) and imaginary (ɛ″) parts of complex dielectric permittivity and ac conductivity (σ_ac) of CdIn₂S₄ single crystals (cubic structure) have been measured in the frequency range f = 5 × 10⁴ to 3.5 × 10⁷ Hz. The results demonstrate that the dielectric dispersion in the crystals has a relaxation nature. In the frequency range f = 5 × 10⁴ to 3.5 × 10⁷ Hz, the ac conductivity of single-crystal CdIn₂S₄ follows the relation σ_ac ∼ f ^0.8, characteristic of hopping conduction through localized states near the Fermi level.     

Synthesis,microstructure and microwave dielectric properties of Ca<Subscript>4-x</Subscript>Mg<Subscript>x</Subscript>La<Subscript>2</Subscript>Ti<Subscript>5</Subscript>O<Subscript>17</Subscript> ceramics

Ca_4-xMg_xLa₂Ti₅O₁₇ ceramics were prepared by a solid state ceramic route for x = 0, 0.5, 1, 2, 3 and 4. The structure and microstructure of the ceramics were investigated using X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy. X-ray diffraction results show that the Ca_4-x Mg _x La₂Ti₅O₁₇ adopts an orthorhombic crystal structure with no secondary phase observed for x from 0 to 0.5. Secondary phase, MgTiO₃ occurs with further increasing doping level (1 ≤ x ≤ 3). When x = 4, mixture phases La_0.66TiO_2.993, MgTiO₃ and a trace of unknown phase coexist. Ca₄La₂Ti₅O₁₇ ceramic exhibits a relative permittivity (ε_r) ~ 65, quality factor (Q × f) ~13,338 GHz (at ~4.75 GHz), and temperature coefficient of resonant frequency (τ _f ) ~ 165 ppm/°C. The sintering temperature was distinctly reduced from 1,580 °C for x = 0 to 1,350 °C for x = 4. With increasing Mg content, ε_r and τ_f obviously decrease, while Q × f value initially decreases and then increases. The ceramic for x = 2 shows ε_r ~ 50, Q × f ~ 9,451 and τ _f  ~ 62.5 ppm/°C. By the complete replacement of Ca with Mg, Mg₄La₂Ti₅O₁₇ ceramic sintered at 1,350 °C for 4 h combines a high dielectric permittivity (ε _r  = 31), high quality factor (Q × f ~ 15,021) and near-zero temperature coefficient of resonant frequency (τ _f  ~ 4.0 ppm/°C). The materials are suitable for microwave applications.     

Polycrystalline materials in MoO<Subscript>3</Subscript>–ZrO<Subscript>2</Subscript>–V<Subscript>2</Subscript>O<Subscript>5</Subscript> system

Melt quenching technique was applied to study tendency for phase formation and amorphization in the MoO₃–ZrO₂–V₂O₅ system. By X-ray diffraction were detected the main crystalline phases separated during the quenching: Zr(MoO₄)₂, V₂MoO₈, (Mo_0.3V_0.7)₂O₅, V_0.95Mo_0.97O₅ but in a wide concentration range the dominant crystalline phase was monoclinic ZrO₂. The average particle sizes of the obtained crystal phases were in the range 30–50 nm. A narrow glass formation area was situated, near MoO₃–V₂O₅ side. The glass-crystalline samples were obtained in the MoO₃- and V₂O₅-rich compositions. The phase formation was proven by IR analysis also. IR data showed that the main structural units built up the glass network are corner shared VO₅ and MoO₆ groups while in the corresponding crystal V₂MoO₈ phase MeO₆ (Me = V, Mo) octahedra are corner and edge shared (band at 580 cm⁻¹).