Photonic Frequency Upconversion by SBS-Based Frequency Tripling

We describe a photonic frequency upconversion by the stimulated Brillouin scattering (SBS)-based frequency tripling method. The frequency tripling and the photonic frequency upconversion are simultaneously obtained by incorporating a dual-electrode electrooptic modulator (EOM) and a single optical source. Each electrode of the dual-electrode EOM is driven by both an intermediate frequency (IF) and a microwave radio frequency (RF) signal, respectively, along with the optical frequency tripling scheme. The dual-electrode EOM generates appropriate optical sidebands, while the IF signal is conveyed by the pump signal. After the successive SBS shifting process, one of the third optical sidebands is amplified by the narrow gain spectrum of SBS. The carrier signal at 32.493 GHz with narrow linewidth, which is amplified by 20 dB while the other signals are suppressed more than 20 dB, is obtained after photodetection. From the simultaneous frequency upconversion and tripling, an IF signal at 1 GHz is upconverted around the 32.493-GHz signal, which is tripled from the RF signal (10.831 GHz). To verify the ability of conveying broadband data that is limited in the previous method based on SBS, the upconversion of a pilot tone at 1 GHz is demonstrated, which means that the data rate exceeds 1 Gb/s. The proposed photonic frequency upconversion shows the spurious free dynamic range of 75.1 dBldrHz^2/3 , which is suitable for a wireless personal communication system adopting the analog fiber-optic link.     

Experimental Demonstration of 1.25-Gb/s Radio-Over-Fiber Downlink Using SBS-Based Photonic Upconversion

We experimentally demonstrate a radio-over-fiber downlink system using a stimulated Brillouin scattering (SBS)-based photonic upconversion technique. The Brillouin selective amplification characteristic of SBS is incorporated to generate the 11-GHz band radio-frequency (RF) carrier. The dual-electrode Mach-Zehnder optical modulator, which is used to carry the broadband data in the optical carrier instead of the optical sideband, is adopted along with the SBS-based carrier generation setup. To vindicate the broadband capabilities of the proposed scheme, 1.25-Gb/s pseudorandom bit sequence data is carried in the optical carrier. Error-free operation of the 1.25-Gb/s downlink is achieved without critical power penalties after the 13-km fiber transmission.     

Optical Microwave Frequency Up-Conversion Via a Frequency-Doubling Optoelectronic Oscillator

We propose and demonstrate an optical microwave modulator that incorporates a low phase-noise optoelectronic oscillator (OEO) for frequency up-conversion in a radio-over-fiber system. A single Mach-Zehnder lithium-niobate waveguide modulator working as a local oscillator in a frequency-doubling OEO directly up-converts the baseband signals to a carrier band. We demonstrate frequency up-conversion to the 20-GHz band for optical analog signals in the intermediate-frequency (IF) band and for optical digital signals at 1.25 Gb/s. The measured transmission bandwidth for IF modulated signals is greater than 1.5 GHz for transmission over 50.5 km of single-mode fiber.     

Bandwidth-reduced Brillouin optical time-domain analysis based on a quarter of the frequency of modulation

Aiming at the problem of high requirement for the signal generator in the Brillouin optical time-domain analysis(BOTDA) system, a quarter of the Brillouin frequency shift(BFS) of modulation is proposed to reduce the required bandwidth of the sensing system. A functional model for solving the intensity of each-order sideband of the output light of electro-optic modulator(EOM) is proposed and applied, so the spectrum with suppressed the carrier and the first-order sidebands while maximizing the se...     

A DC-20-GHz InP HBT balanced analog multiplier for high-data-ratedirect-digital modulation and fiber-optic receiver applications

This paper reports on a dc-20-GHz InP heterojunction bipolar transistor (HBT) active mixer, which obtains the highest gain-bandwidth product (GBP) thus far reported for a direct-coupled analog mixer integrated circuit (IC). The InP HBT active mixer is based on the Gilbert transconductance multiplier cell and integrates RF, local oscillator, and IF amplifiers, High-speed 70-GHz f_T and 160-GHz f_max InP HBT devices along with microwave matching accounts for its record performance. Operated as a down-converter mixer, the monolithic microwave integrated circuit achieves an RF bandwidth (BW) from dc-20 GHz with 15.3-dB gain and benchmarks a factor of two improvement in GBP over state-of-the-art analog mixer ICs. Operated as an up-converter, direct-digital modulation of a 2.4-Gb/s 2³¹ -1 pseudorandom bit sequence (PRBS) onto a 20-GHz carrier frequency resulted in a carrier rejection of a 28 dB, clock suppression of 35 dBc, and less than a 50-ps demodulated eye phase jitter. The analog multiplier was also operated as a variable gain amplifier, which obtained 20-dB gain with a BW from dc-18 GHz, an third-order intercept of 12 dBm, and over 25 dB of dynamic range. A single-ended peak-to-peak output voltage of 600 mV was obtained with a ±35-mV 15 Gb/s 2⁵-1 PRES input demonstrating feasibility for OC-192 fiber-telecommunication data rates. The InP-based analog multiplier IC is an attractive building block for several wideband communications such as those employed in satellites, local multipoint distribution systems, high-speed local area networks, and fiber-optic links     

Ka波段频率合成器设计

提出了一种Ka波段低杂散、捷变频频率合成器设计方案.该方案采用直接数字合成(DDS)+直接上变频的频率合成模式,DDS1产生360～600 MHz低杂散中频信号,DDS2产生波形信号.经过4次上变频、分段滤波、放大后,该方案实现了宽带、低杂散、捷变频频率合成器的设计,为系统提供本振信号、激励信号等.根据设计方案,制作了...     

一种中频相同的微波光子信道化接收机

提出一种基于相干光处理的微波信道化接收机,采 用 自由谱范围(FSR)不同的两套光频率梳(OFC,optical frequen cy combs)分别作为 光载波和光本振,使得各个信道的输出具有相同的中频。本文方法将微波信号调制到载波 OFC的每一个 频率分量上,并用法布里-珀罗(F-P)光滤波器对多个信道的调制光边带同时进行带通滤 波,然后与 本振OFC进行相干探测实现频率下转换。若载波OFC比本振OFC的FSR大于1个 信道带宽,并使 F-P滤波器的FSR与本振OFC相等,可得 到等带宽、等中频的微波信道,降低了后续电路的复杂度。对 两个相邻信道进行了实验,将9.74～9.86GHz和9.86～9.98GHz波段的信号分别下转换到两个带宽为120MHz 的中频信道,两个中频信道的中心频率仅相差4MHz分别为900MHz和 896MHz,表明本文方法能够实现等中频的信道输出。     

Compact 28-GHz subharmonically pumped resistive mixer MMIC using a lumped-element high-pass/band-pass balun

This work reports a novel lump-element balun for use in a miniature monolithic subharmonically pumped resistive mixer (SPRM) microwave monolithic integrated circuit. The proposed balun is simply analogous to the traditional Marchand balun. The coupled transmission lines are replaced by lump elements, significantly reducing the size of the balun. This balun requires no complicated three-dimensional electromagnetic simulations, multilayers or suspended substrate techniques; therefore, the design parameters are easily calculated. A 2.4-GHz balun is demonstrated using printed circuit board technology. The measurements show that the outputs of balun with high-pass and band-pass responses, a 1-dB gain balance, and a 5/spl deg/ phase balance from 1.7 to 2.45 GHz. The balun was then applied in the design of a 28-GHz monolithic SPRM. The measured conversion loss of the mixer was less than 11dB at a radio frequency (RF) bandwidth of 27.5-28.5 GHz at a fixed 1 GHz IF, a local oscillator (LO)-RF isolation of over 35 dB, and a 1-dB compression point higher than 9 dBm. The chip area of the mixer is less than 2.0 mm/sup 2/.     

Design and Performance of W-Band Broad-Band Integrated Circuit Mixers

Broad-band integrated circuit mixers rising a crossbar suspended stripline configuration and a finline configuration were developed with GaAs beamlead diodes. For the crossbar suspended stripline balanced mixer, less than 7.5-dB conversion loss for 15-GHz instantaneous, IF bandwidth was achieved with the LO at 75 GHz and the RF swept from 76 to 91 GHz. With the LO at 90 GHz, a conversion loss of less than 7.8 dB was achieved over a 14-GHz instantaneous bandwidth as the RF is swept from 92 to 105 GHz. For the finline balanced mixer, a conversion loss of 8 to 12 dB over a 32-GHz instantaneous IF bandwidth was achieved as the RF is swept from 76 to 108 GHz. Integrated circuit building blocks, such as filters, broadside couplers, matching circuits, and varions transitions, were also developed.     

On Frequency-Doubled Optical Millimeter-Wave Generation Technique Without Carrier Suppression for In-Building Wireless Over Fiber Applications

A novel optical millimeter-wave (mm-wave) generation scheme based on double-sideband phase modulation (DSB-PM) to achieve frequency doubling without suppressing the carrier is proposed. Theoretical analysis shows that the generated 60-GHz optical mm-wave can tolerant ${pm}$ 0.016-nm wavelength drifting with filter bandwidth ranging from 70 to 100 GHz to sustain first to second harmonic suppression ratio of 18 dB. In addition, error-free transmission of 60-GHz mm-wave at 2.5 Gb/s is experimentally demonstrated over a combined distance of 3-m wireless with 21-dBm equivalent isotropically radiated power, and 250-m fiber to best emulate an in-building network environment. Dispersion effect on the frequency-doubled PM optical mm-wave without carrier suppression is also analyzed and experimentally studied by comparing the link performance over single-mode fiber (SMF-28) and dispersion-shifted fiber (DSF), respectively.      

V-band Low-noise Integrated Circuit Receiver

A compact low-noise V-band integrated circuit receiver has been developed for space communication systems, The receiver accepts an RF input of 60-63 GHz and generates an IF output of 3-6 GHz. A Gunn oscillator at 57 GHz is phaselocked to a low-frequency reference source to achieve high stability and low FM noise. The receiver has an overall single sideband noise figure of less than 10.5 dB and an RF to IF gain of 40 dB over a 3-GHz RF bandwidth. All RF circuits are fabricated in integrated circuits on a Duroid substrate.     

高非线性光纤中受激布里渊散射的抑制和光参量放大

受激布里渊散射 (SBS)的抑制是实现光纤参量放大的重要技术要求 ,已有文献报道多采用对抽运光进行相位调制的方法 ,将光功率分散到多个频率分量上来达到这一目的。提出一种二次调相的方法 ,在已有 2GHz相位调制的商品光源上施加 36 5MHz的二次相位调制 ,将高非线性光纤 (HNLF)的受激布里渊散射阈值由未加任何调制时的 10dBm至少提高到 2 3 5dBm ,达到了参量放大的要求。在此基础上 ,进行了连续波 (CW )抽运的光纤参量放大实验。实验中采用长度为 14 5 0m ,非线性系数γ =11 9W-1km-1,色散斜率S =0 0 15 5ps/(nm2 ·km)的高非线性光纤 ,使用外腔可调谐激光器 (ECL)作为信号光源 ,小信号增益带宽达到 2 6nm(增益 >10dB) ,峰值增益达到2 4dB。同时还观察到了由于非线性拉曼放大作用造成的长波长信号光增益大于短波长信号光增益的不对称性。     

Novel Design Approach for X-Band GaAs Monolithic Analog 1/4 Frequency Divider

A novel analog frequency divider which can generate a 1/4 frequency component is proposed. The frequency divider consists of a dual-gate FET and a two-stage capacitor-resistor coupled amplifier. This circuit configuration also enables achieving a small-size GaAs MMIC analog frequency divider. In this analog frequency divider, the input signal f/sub 0/ is mixed with signal component f/sub 0//x caused by noise or transients in a feedback loop. Then, a (1 -- 1/x)f/sub 0/ IF component is induced and is again mixed with the input signal. This process delivers the f/sub 0//x component regeneratively. Resultant continuous signal components f/sub 0//x and (1-1/x)f/sub 0/ have a harmonic relation when the system reaches a steady state. The f/sub 0//x component can be mainly obtained at an output port of the frequency divider. The operation band was simulated using a SPICE II computer program. The designed bandwidth and conversion gain for the 1/4 frequency divider are 8.5-10.6 GHz and -3 dB, respectively. Based on the simulation, a GaAs monolithic analog 1/4 frequency divider was made and tested. The developed 1/4 frequency divider provides a 8.5-10.2-GHz operation bandwidth and --5+-1-dB conversion gain. The designed and experimental values are in good agreement. The frequency division band can be shifted to higher frequency (10.65-11.2 GHz) by adopting the external matching circuit at the GaAs chip output port. The proposed analog frequency divider circuit can be applied not only for 1/4 frequency division, but also for 1/n frequency division (interger n > 2).     

A 0.7-7 GHz wideband reconfigurable receiver RF front-end in CMOS

In this paper,a 0.7-7 GHz wideband RF receiver front-end SoC is designed using the CMOS process.The front-end is composed of two main blocks:a single-ended wideband low noise amplifier (LNA) and an inphase/quadrature (I/Q) voltage-driven passive mixer with IF amplifiers.Based on a self-biased resistive negative feedback topology,the LNA adopts shunt-peaking inductors and a gate inductor to boost the bandwidth.The passive down-conversion mixer includes two parts:passive switches and IF amplifiers.The measurement results show that the front-end works well at different LO frequencies,and this chip is reconfigurable among 0.7 to 7 GHz by tuning the LO frequency.The measured results under 2.5-GHz LO frequency show that the front-end SoC achieves a maximum conversion gain of 26 dB,a minimum noise figure (NF) of 3.2 dB,with an IF bandwidth of greater than 500 MHz.The chip area is 1.67 × 1.08 mm2.     

10‐Gbit/s Wireless Communication System at 300 GHz

A 10‐Gbit/s wireless communication system operating at a carrier frequency of 300 GHz is presented. The modulation scheme is amplitude shift keying in incoherent mode with a high intermediate frequency (IF) of 30 GHz and a bandwidth of 20 GHz for transmitting a 10‐Gbit/s baseband (BB) data signal. A single sideband transmission is implemented using a waveguide‐tapered 270‐GHz highpass filter with a lower sideband rejection of around 60 dB. This paper presents an all‐electronic design of a terahertz communication system, including the major modules of the BB and IF band as well as the RF modules. The wireless link shows that, aided by a clock and data recovery circuit, it can receive 2⁷?1 pseudorandom binary sequence data without error at up to 10 Gbit/s for over 1.2 m using collimating lenses, where the transmitted power is 10 μW.     

基于受激布里渊散射的30GHz毫米波单边带调制生成技术

本文提出了一种基于受激布里渊散射原理的单边带调制产生30GHz毫米波的新方法,可应用于光载射频系统。该方法利用一个双布里渊散射移频结构生成泵浦光,并将其反向注入到传输信号光的25 km单模光纤;通过受激布里渊散射,直接放大受调制信号光的正三阶边带,实现光载波的单边带调制,有效改善由色散效应引入的功率涨落问题,保证了毫米波功率稳定。此外,信号光和泵浦光由同一个激光器产生,有效消除两者间的相对频率漂移,从而大大提升了毫米波生成系统的频率稳定性。通过我们的方法,实验系统所生成的毫米波功率增益了21dB,其3dB线宽为10kHz。     

50-GHz-bandwidth baseband amplifiers using GaAs-based HBTs

Baseband amplifiers of 50 GHz, using high-performance AlGaAs/InGaAs HBTs with regrown base contacts, have been demonstrated. The transimpedance amplifier achieved a bandwidth of 50.8 GHz with a gain of 11.6 dB. The transimpedance characteristics were of 49.3-GHz bandwidth with a 43.7-dBΩ transimpedance gain. The resistive and mirror Darlington feedback amplifiers, respectively, achieved a bandwidth of 54.7 GHz with a gain of 8.2 dB and a bandwidth of more than 60.0 GHz with a gain of 6.3 dB. To date, these are the widest bandwidths reported for lumped-circuit-design amplifiers. These results suggest the great potential of these amplifiers for use in future optical communication, microwave and millimeter-wave applications     

Si bipolar chip set for 10-Gb/s optical receiver

Three Si bipolar ICs, a preamplifier, a gain-controllable amplifier, and a decision circuit, have been developed for 10-Gb/s optical receivers. A dual-feedback configuration with a phase adjustment capacitor makes it possible to increase the preamplifier bandwidth up to 11.2 GHz, while still retaining flat frequency response. The gain-controllable amplifier, which utilizes a current-dividing amplifier stage, has an 11.4-GHz bandwidth with 20-dB gain variation. A master-slave D-type flip-flop is also operated as the decision circuit at 10 Gb/s. On-chip coplanar lines were applied to minimize the electrical reflection between the ICs     

A high-IP3 RF receiver chip set for mobile radio base stations upto 2 GHz

We present a monolithically integrated high third-order intercept point (IP3) radio frequency (RF) receiver chip set for mobile radio base stations up to 2 GHz, in a 25-GHz f_T Si bipolar production technology. The chip set consists of a RF preamplifier, active mixer circuits, and an intermediate frequency (IF) limiter. The preamplifier gain is 12 dB, the noise figure is 5.5 dB at 900 MHz, and the output (OIP3) is up to +24 dBm depending on supply voltage. The two different mixers provide a conversion gain of 1.5 dB up to 3 dB, an OIP3 in the range of +21 dBm up to +29 dBm, and a minimal single sideband (SSB) noise figure of 13 dB. The IF limiter shows an excellent limiting characteristic at 10 dBm output power and has a high bandwidth of more than 1 GHz     

Optically generated electrical-modulation formats in digital-microwave link applications

We investigate a novel technique to generate the transmission signal in digital-microwave link applications. This technique is based on a photonic device that achieves both electrical modulation (QAM, PSK, ASK) and harmonic upconversion of the microwave carrier. Simulation results are provided for a seventh-harmonic 38.5-GHz transmission of a 2.5-Gbps signal through a 1-km fiber span. The impact of fiber chromatic-dispersion on the link bandwidth is also analyzed.