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1.
Subsolidus phase relations were established in the system Si3 N4 -SiO2 -Y2 O3 . Four ternary compounds were confirmed, with compositions of Y4 Si2 O7 N2 , Y2 Si3 O3 N4 , YSiO2 N, and Y10 (SiO4 )6 N2 . The eutectic in the triangle Si3 N4 -Y2 Si2 O7 -Y10 (SiO4 )6 N2 melts at 1500°C and that in the triangle Si2 N2 O-SiO2 -Y2 Si2 O7 at 1550°C. The eutectic temperature of the Si3 N4 -Y2 Si2 O7 join was ∼ 1520°C. 相似文献
2.
IRVIN C. HUSEBY† HANS L. LUKAS GÜNTER PETZOW 《Journal of the American Ceramic Society》1975,58(9-10):377-380
The 1780°C isothermal section of the reciprocal quasiternary system Si3 N4 -SiO2 -BeO-Be3 N2 was investigated by the X-ray analysis of hot-pressed samples. The equilibrium relations shown involve previously known compounds and 8 newly found compounds: Be6 Si3 N8 , Be11 Si5 N14 , Be5 Si2 N6 , Be9 Si3 N10 , Be8 SiO4 N4 , Be6 O3 N2 , Be8 O5 N2 , and Be9 O6 N2 . Large solid solubility occurs in β-Si3 N4 , BeSiN2 , Be9 Si3 N10 , Be4 SiN4 , and β-Be3 N2 . Solid solubility in β-Si3 N4 extends toward Be2 SiO4 and decreases with increasing temperature from 19 mol% at 1770°C to 11.5 mol% Be2 SiO4 at 1880°C. A 4-phase isotherm, liquid +β-Si3 N4 ( ss )Si2 ON2 + BeO, exists at 1770°C. 相似文献
3.
F. F. LANGE S. C. SINGHAL R. C. KUZNICKI 《Journal of the American Ceramic Society》1977,60(5-6):249-252
Composite powders were hot-pressed to determine the phase relations in the Si3 N4 -SiO2 -Y2 O3 pseudoternary system. Four quaternary compounds, Si3 Y2 O3 N4 , YSiO2 N, Y10 Si7 O23 N4 , and Y4 Si2 O7 N2 , were identified. Studies of polyphase and single-phase materials in this system showed that these 4 compounds are unstable under oxidizing conditions. Materials within the Si3 N4 -Si2 N2 O-Y2 Si2 O7 compatibility triangle precluded the unstable compounds, and are extremely resistant to oxidation. 相似文献
4.
Sintering kinetics of the system Si3 N4-Y2O3 -Al2 O3 were determined from measurements of the linear shrinkage of pressed disks sintered isothermally at 1500° to 1700°C. Amorphous and crystalline Si3 N4 were studied with additions of 4 to 17 wt% Y2 O3 and 4 wt% A12 O3 . Sintering occurs by a liquid-phase mechanism in which the kinetics exhibit the three stages predicted by Kingery's model. However, the rates during the second stage of the process are higher for all compositions than predicted by the model. X-ray data show the presence of several transient phases which, with sufficient heating, disappear leaving mixtures of β ' -Si3 N4 and glass or β '-Si3 N4 , α '-Si3 N4 , and glass. The compositions and amounts of the residual glassy phases are estimated. 相似文献
5.
Naoto Hirosaki Yoshinobu Yamamoto Toshiyuki Nishimura Mamoru Mitomo Junichi Takahashi Hisanori Yamane Masahiko Shimada 《Journal of the American Ceramic Society》2002,85(11):2861-2863
Phase relationships in the Si3 N4 –SiO2 –Lu2 O3 system were investigated at 1850°C in 1 MPa N2 . Only J-phase, Lu4 Si2 O7 N2 (monoclinic, space group P 21 / c , a = 0.74235(8) nm, b = 1.02649(10) nm, c = 1.06595(12) nm, and β= 109.793(6)°) exists as a lutetium silicon oxynitride phase in the Si3 N4 –SiO2 –Lu2 O3 system. The Si3 N4 /Lu2 O3 ratio is 1, corresponding to the M-phase composition, resulted in a mixture of Lu–J-phase, β-Si3 N4 , and a new phase of Lu3 Si5 ON9 , having orthorhombic symmetry, space group Pbcm (No. 57), with a = 0.49361(5) nm, b = 1.60622(16) nm, and c = 1.05143(11) nm. The new phase is best represented in the new Si3 N4 –LuN–Lu2 O3 system. The phase diagram suggests that Lu4 Si2 O7 N2 is an excellent grain-boundary phase of silicon nitride ceramics for high-temperature applications. 相似文献
6.
The subsolidus phase diagram of the quasiternary system Si3 N4 -AlN-Y2 O3 was established. In this system α-Si3 N4 forms a solid solution with 0.1Y2 O3 : 0.9 AIN. The solubility limits are represented by Y0.33 Si10.5 Al1.5 O0.5 N15.5 and Y0.67 Si9 A13 ON15 . At 1700°C an equilibrium exists between β-Si3 N4 and this solid solution. 相似文献
7.
Hot isostatically pressed Si3 N4 was coated with chemically vapor-deposited Ta2 O5 , and subjected to oxidative and corrosive environments to determine the feasibility of using a Ta2 O5 coating for protecting Si3 N4 from hot corrosion. The coated structure was relatively stable at 1000deg; C in pure O2 . However, the Ta2 O5 -Si3 N4 system became unstable in an environment containing Na2 SO4 and O2 at 1000deg; C because (1) Ta2 O5 and Na2 SO4 reacted rapidly to form NaTaO3 and (2) subsequently NaTaO3 interacted destructively with the underlying Si3 N4 substrate to form a molten phase. 相似文献
8.
Zhen-Kun Huang Steve D. Nunn Irene Peterson Tseng-Ying Tien 《Journal of the American Ceramic Society》1994,77(12):3251-3254
Formation of N-phase in the system Mg,Si,Al/N,O was studied. Its composition was confirmed to be MgAl2 Si4 O6 N4 (2Si2 N2 OMgAl2 O4 ). Subsolidus phase relationships in the MgO–Si2 N2 O-Al2 O3 system were determined. The results are discussed by comparing with two similar systems, CaO-and Y2 O3 –Si2 N2 O–Al2 O3 . 相似文献
9.
Linus U. J. T. Ogbuji 《Journal of the American Ceramic Society》1992,75(11):2995-3000
The results of two-step oxidation experiments on chemically-vapor-deposited Si3 N4 and SiC at 1350°C show that a correlation exists between the presence of a Si2 N2 O interphase and the strong oxidation resistance of Si3 N4 . During normal oxidation, k p for SiC was 15 times higher than that for Si3 N4 , and the oxide scale on Si3 N4 was found by SEM and TEM to contain a prominent Si2 N2 O inner layer. However, when oxidized samples are annealed in Ar for 1.5 h at 1500°C and reoxidized at 1350°C as before, three things happen: the oxidation k p increases over 55-fold for Si3 N4 , and 3.5-fold for SiC; the Si3 N4 and SiC oxidize with nearly equal k p 's; and, most significant, the oxide scale on Si3 N4 is found to be lacking an inner Si2 N2 O layer. The implications of this correlation for the competing models of Si3 N4 oxidation are discussed. 相似文献
10.
The melting behaviors of selected compositions in the Si3 N4 -AlN-Y2 O3 system were determined under 1 MPa of nitrogen. The phase diagrams of the ternary and their binary systems are presented. The lowest melting composition of the ternary system contains 15 mol % Si3 N4 , 25 mol % AIN, and 60 mol % Y2 O3 and has a melting temperature of 1650°C. The binary eutectic compositions and temperatures are 15 mol % Si3 N4 and 85 mol % Y2 O3 at 1720°C, and 20 mol % AIN and 80 mol% Y2 O3 at 1730°C. 相似文献
11.
C. Greskovich 《Journal of the American Ceramic Society》1981,64(2):31-C-
The development of microstructure in hot-pressed Sia N4 was studiehd for a typical Si3 N4 powder with and without BeSiN2 as a densification aid. The effect of hot-pressing temperature on density, α- to β-Si3 N4 conversion and specific surface area showed that BeSiN2 appears to increase the mobility of the system by enhancing densification, α- to β-Si3 N4 transformation, and grain growth at temperatures between 1450° and 1800°. These processes appear to occur in the presence of a liquid phase. 相似文献
12.
Jun-Qi Li Fa Luo Dong-Mei Zhu Wan-Cheng Zhou 《Journal of the American Ceramic Society》2007,90(6):1950-1952
The influence of phase formation on the dielectric properties of silicon nitride (Si3 N4 ) ceramics, which were produced by pressureless sintering with additives in MgO–Al2 O3 –SiO2 system, was investigated. It seems that the difference in the dielectric properties of Si3 N4 ceramics sintered at different temperatures was mainly due to the difference of the relative content of α-Si3 N4 , β-Si3 N4 , and the intermediate product (Si2 N2 O) in the samples. Compared with α-Si3 N4 and Si2 N2 O, β-Si3 N4 is believed to be a major factor influencing the dielectric constant. The high-dielectric constant of β-Si3 N4 could be attributed to the ionic relaxation polarization. 相似文献
13.
Subsolidus Phase Relationships in Part of the System Si,Al,Y/N,O: The System Si3 N4 ─AIN─YN─Al2 O3 ─Y2 O3
Wei-Ying Sun Tseng-Ying Tien Tung-Sheng Yen 《Journal of the American Ceramic Society》1991,74(11):2753-2758
The subsolidus phase relationships in the system Si,Al,Y/N,O were determined. Thirty-nine compatibility tetrahedra were established in the region Si3 N4 ─AIN─Al2 O3 ─Y2 O3 . The subsolidus phase relationships in the region Si3 N4 ─AIN─YN─Y2 O3 have also been studied. Only one compound, 2YN:Si3 N4 , was confirmed in the binary system Si3 N4 ─YN. The solubility limits of the α'─SiAION on the Si3 N4 ─YN:3AIN join were determined to range from m = 1.3 to m = 2.4 in the formula Y m /3 Si12- m Al m N16 . No quinary compound was found. Seven compatibility tetrahedra were established in the region Si3 N4 ─AIN─YN─Y2 O3 . 相似文献
14.
L. K. V. LOU T. E. MITCHELL A. H. HEUER 《Journal of the American Ceramic Society》1978,61(9-10):392-396
Impurity phases in commercial hot-pressed Si3 N4 were investigated using transmission electron microscopy. In addition to the dominant, β-Si3 N4 phase, small amounts of Si2 N2 O, SiC, and WC were found. Significantly, a continuous grain-boundary phase was observed in the ∼ 25 high-angle boundaries examined. This film is ∼ 10 Å thick between, β-Si3 N4 grains and ∼ 30 Å thick between Si2 N2 O and β-Si3 N4 grains. 相似文献
15.
Hui Gu Rowland M. Cannon Hans J. Seifert Michael J. Hoffmann Isao Tanaka 《Journal of the American Ceramic Society》2002,85(1):25-32
The nitrogen solubility in the SiO2 -rich liquid in the metastable binary SiO2 -Si3 N4 system has been determined by analytical TEM to be 1%–4% of N/(O + N) at 1973–2223 K. Analysis of the near edge structure of the electron energy loss peak indicates that nitrogen is incorporated into the silicate network rather than being present as molecular N2 . A regular solution model with a positive enthalpy of mixing for the liquid was used to match the data for the metastable solubility of N in the presence of crystalline Si3 N4 and to adjust the computed phase diagram. The solubility of Si3 N4 in fused SiO2 is far less than reported in liquid silicates also containing Al, Mg, and/or Y. Apparently, these cations act as modifiers that break anion bridges in the silicate network and, thereby, allow further incorporation of Si3 N4 without prohibitive amounts of network cross-linking. Finally, indications emerged regarding the diffuse nature of the Si3 N4 -SiO2 interface that leads to amorphous regions of higher N content. 相似文献
16.
John J. Petrovic Maria I. Pena Ivar E. Reimanis Michael S. Sandlin Samuel D. Conzone H. Harriet Kung Darryl P. Butt 《Journal of the American Ceramic Society》1997,80(12):3070-3076
The mechanical behavior of MoSi2 reinforced–Si3 N4 matrix composites was investigated as a function of MoSi2 phase content, MoSi2 phase size, and amount of MgO densification aid for the Si3 N4 phase. Coarse-phase MoSi2 -Si3 N4 composites exhibited higher room-temperature fracture toughness than fine-phase composites, reaching values >8 MP·am1/2 . Composite fracture toughness levels increased at elevated temperature. Fine-phase composites were stronger and more creep resistant than coarse phase composites. Room-temperature strengths >1000 MPa and impression creep rates of ∼10−8 s−1 at 1200°C were observed. Increased MgO levels generally were deleterious to MoSi2 -Si3 N4 mechanical properties. Internal stresses due to MoSi2 and Si3 N4 thermal expansion coefficient mismatch appeared to contribute to fracture toughening in MoSi2 -Si3 N4 composites. 相似文献
17.
Shuichi Kawano Junichi Takahashi Shiro Shimada 《Journal of the American Ceramic Society》2003,86(4):701-705
TiN-coated Si3 N4 particles were prepared by depositing TiO2 on the Si3 N4 surfaces from Ti(O- i -C3 H7 )4 solution, the TiO2 being formed by controlled hydrolysis, then subsequently nitrided with NH3 gas. A homogeneous TiO2 coating was achieved by heating a Si3 N4 suspension containing 1.0 vol% H2 O with the precursor at 40°C. Nitridation successfully produced Si3 N4 particles coated with 10–20 nm TiN particles. Spark plasma sintering of these TiN/Si3 N4 particles at 1600°C yielded composite ceramics with a relative density of 96% at 25 vol% TiN and an electrical resistivity of 10−3 Ω·cm in compositions of 17.5 and 25 vol% TiN/Si3 N4 , making these ceramics suitable for electric discharge machining. 相似文献
18.
Beta-type CVD-Si3 N4 plates (up to 1.1 mm thick) have been prepared by adding TiCl4 vapor to the system SiCl4 -NH3 -H2 at deposition temperatures of 1350° to 1450°C, while α-type or amorphous CVD-Si3 N4 was obtained without TiCl4 vapor at the same deposition temperature. Three to four wt % 777V was included in the β-type CVD-Si3 N4 matrix. The density, preferred orientation, and lattice parameters of β-type CVD-Si3 N4 were examined. 相似文献
19.
L. J. BOWEN T. G. CARRUTHERS R. J. BROOK 《Journal of the American Ceramic Society》1978,61(7-8):335-359
The rates of densification and phase transformation undergone by α-Si3 N4 during hot-pressing in the presence of Y2 O3 , Y2 O3 −2SiO2 , and Li2 0−2Si02 as additives were studied. Although these systems behave less simply than MgO-doped Si3 N4 , the data can be interpreted during the early stages of hot-pressing as resulting from a solution-diffusion-reprecipitation mechanism, where the diffusion step is rate controlling and where the reprecipitation step invariably results in the formation of the β-Si3 N4 phase. 相似文献
20.
Branko Matovic Georg Rixecker Fritz Aldinger 《Journal of the American Ceramic Society》2004,87(4):546-549
This paper deals with the densification and phase transformation during pressureless sintering of Si3 N4 with LiYO2 as the sintering additive. The dilatometric shrinkage data show that the first Li2 O- rich liquid forms as low as 1250°C, resulting in a significant reduction of sintering temperature. On sintering at 1500°C the bulk density increases to more than 90% of the theoretical density with only minor phase transformation from α-Si3 N4 to β-Si3 N4 taking place. At 1600°C the secondary phase has been completely converted into a glassy phase and total conversion of α-Si3 N4 to β-Si3 N4 takes place. The grain growth is anisotropic, leading to a microstructure which has potential for enhanced fracture toughness. Li2 O evaporates during sintering. Thus, the liquid phase is transient and the final material might have promising mechanical properties as well as promising high-temperature properties despite the low sintering temperature. The results show that the Li2 O−Y2 O3 system can provide very effective low-temperature sintering additives for silicon nitride. 相似文献