New transparent conducting MgIn2O4---Zn2In2O5 thin films prepared by magnetron sputtering

New materials for a transparent conducting oxide film are demonstrated. Highly transparent Zn₂In₂O₅ films with a resistivity of 3.9 × 10⁻⁴ Ω cm were prepared on substrates at room temperature using a pseudobinary compound powder target composed of ZnO (50 mol.%) and In₂O₃ (50 mol.%) by r.f. magnetron sputtering. MgIn₂O₄---Zn₂In₂O₅ films were prepared using MgIn₂O₄ targets with a ZnO content of 0–100 wt.%. The resistivity of the deposited films gradually decreased from 2 × 10⁻³ to 3.9 × 10⁻⁴ Ω cm as the Zn/(Mg + Zn) atomic ratio introduced into the films was increased. The greatest transparency was obtained in a MgIn₂O₄ film. The optical absorption edge of the films decreased as the Zn/(Mg + Zn) atomic ratio was increased, corresponding to the bandgap energy of their materials. It was found that the resistance of the undoped Zn₂In₂O₅ films was more stable than either the undoped MgIn₂O₄, ZnO or In₂O₃ films in oxidizing environments at high temperatures.     

Gd2Zr2O7陶瓷的高温热物理性能及Gd2Zr2O7-8YSZ双涂层制备

通过高温固相合成方法制备了烧绿石结构Gd₂Zr₂O₇陶瓷材料,研究了其高温相稳定性和热物理性能。采用电子束物理气相沉积方法制备了Gd₂Zr₂O₇-8YSZ(8%Y₂O₃-ZrO₂)双陶瓷层结构热障涂层,分析了涂层顶层的晶体结构和原子数量比。结果表明,Gd₂Zr₂O₇在室温至1500℃范围内具有良好的相稳定性,比第一代热障涂层8YSZ的高温相稳定区间提高250℃以上。Gd₂Zr₂O₇块材的热膨胀系数在100~1500℃范围内介于8.8×10^-6~11.0×10^-6 K^-1之间,与8YSZ接近; 在1000~1400℃高温区间,热导率约为1.0 W(m·K)^-1,比8YSZ降低一半左右。沉积制得的Gd₂Zr₂O₇涂层化学成分符合化学计量比,为烧绿石结构,涂层呈现典型的柱状晶结构。     

Enhanced ferroelectric properties of multilayer SrBi2Ta2O9/SrBi2Nb2O9 thin films for NVRAM applications

Ferroelectric SrBi₂Ta₂O₉/SrBi₂Nb₂O₉ (SBT/SBN) multilayer thin films with various stacking periodicity were deposited on Pt/TiO₂/SiO₂/Si substrate by pulsed laser deposition technique. The X-ray diffraction patterns indicated that the perovskite phase was fully formed with polycrystalline structure in all the films. The Raman spectra showed the frequency of the O–Ta–O stretching mode for multilayer and single layer SrBi₂(Ta_0.5Nb_0.5)₂O₉ (SBNT) samples was 827–829 cm⁻¹, which was in between the stretching mode frequency in SBT (813 cm⁻¹) and SBN (834 cm⁻¹) thin films. The dielectric constant was increased from 300 (SBT) to 373 at 100 kHz in the double layer SBT/SBN sample with thickness of each layer being 200 nm. The remanent polarization (2P_r) for this film was obtained 41.7 μC/cm², which is much higher, compared to pure SBT film (19.2 μC/cm²). The coercive field of this double layer film (67 kV/cm) was found to be lower than SBN film (98 kV/cm).     

Structure and electrical properties of (100)-oriented Pb(Zn1/3Nb2/3)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 thin films on La0.7Sr0.3MnO3 electrode by chemical solution deposition

(100)-oriented 0.462Pb(Zn_1/3Nb_2/3)O₃–0.308Pb(Mg_1/3Nb_2/3)O₃–0.23PbTiO₃ (PZN-PMN-PT) perovskite ferroelectric thin films were prepared on La_0.7Sr_0.3MnO₃/LaAlO₃ (LSMO/LAO) substrate via a chemical solution deposition route. The perovskite LSMO electrode was found to effectively suppress the pyrochlore phase while promote the growth of the perovskite phase in the PZN-PMN-PT film. The film annealed at 700 °C exhibited a high dielectric constant of 2130 at 1 kHz, a remnant polarization, 2P_r, of 29.8 μC/cm², and a low leakage current density of 7.2 × 10^− 7 A/cm² at an applied field of 200 kV/cm. The ferroelectric polarization was fatigue-free at least up to 10¹⁰ cycles. Piezoelectric coefficient, d₃₃, of 48 pm/V was also demonstrated. The results showed that much superior properties could be achieved with the PZN-PMN-PT thin films on the solution derived LSMO electrode than on Pt electrode by sputtering.     

Highly enhanced luminescence of SrB4O7:Eu phosphor prepared by the combustion method using glycine as fuel

Eu²⁺ ion doped into SrB₄O₇ matrix was prepared by combustion method heated at 900 °C in air, using urea (U) or glycine (G) as fuels in different ratios (U100, A10, A25, G10, G25, G75, and G100). In some compositions, ammonium acetate (AA) was used to reduce the exothermicity of combustion reaction. X-ray diffraction and luminescence spectroscopy were used to characterize the material. The high intense emission band at 367 nm is assigned to 4f⁶5d → 4f⁷(⁸S_7/2) transition arisen from divalent europium ion. It is observed that the interconfigurational transition is dependent on the molar ratio of glycine:urea fuels. Glycine fuel favors Eu²⁺ formation in SrB₄O₇ host lattice prepared by combustion method.     

Al2O3 formation on Si by catalytic chemical vapor deposition

Catalytic chemical vapor deposition (Cat-CVD) has been developed to deposit alumina (Al₂O₃) thin films on silicon (Si) crystals using N₂ bubbled tri-methyl aluminum [Al(CH₃)₃, TMA] and molecular oxygen (O₂) as source species and tungsten wires as a catalyzer. The catalyzer dissociated TMA at approximately 600 °C. The maximum deposition rate was 18 nm min⁻¹ at a catalyzer temperature of 1000 °C and substrate temperature of 800 °C. Metal oxide semiconductor (MOS) diodes were fabricated using gates composed of 32.5-nm-thick alumina film deposited at a substrate temperature of 400 °C. The capacitance measurements resulted in a relative dielectric constant of 7.4, fixed charge density of 1.74×10¹² cm⁻², small hysteresis voltage of 0.12 V, and very few interface trapping charges. The leakage current was 5.01×10⁻⁷ A cm⁻² at a gate bias of 1 V.     

Influence of rare-earth oxides on structure and crystallization properties of Bi2O3–B2O3 glass

Bi₂O₃·B₂O₃ glasses doped with rare-earth oxides (RE₂O₃) (RE³⁺ = La³⁺, Pr³⁺, Sm³⁺, Gd³⁺, Er³⁺ and Yb³⁺) were prepared by the melting–quenching method. The relationships between composition and properties were demonstrated by IR, DSC, XRD and SEM analysis. The results show that the network structure resembles that of undoped Bi₂O₃·B₂O₃ glass, composing of [BO₃], [BO₄] and [BiO₆] units. RE₂O₃ stabilizes the glass structure as a modifier. Transition temperature (T_g) increases linearly with cationic field strength (CFS) of RE³⁺. La₂O₃, Pr₂O₃, Sm₂O₃ and Gd₂O₃ are benefit to promote the formation of BiBO₃ crystal. When Er₂O₃ and Yb₂O₃ are introduced, respectively, the main crystal phase changes to Bi₆B₁₀O₂₄. Transparent surface crystallized samples are obtained by reheating at 460–540 °C for 5 h. In this case, needle like BiBO₃ crystal or rare-earth-doped BiBO₃ crystal (Pr_xBi_1−xBO₃ and Gd_xBi_1−xBO₃) are observed, which is promising for non-linear optical application.     

Effects of reduction treatment on the photorefractive properties of Pb0.5Ba0.5Nb2O6

Lead barium niobate is a new photorefractive material of high interest for a variety of applications including holographic storage. Pb_0.5Ba_0.5Nb₂O₆ crystals have been grown by the Bridgman method, and the effects of heat treatments on their photorefractive properties were investigated using Ar ion laser at λ=514.5 nm. The color and absorption spectrum of the crystals varied depending on the oxygen partial pressure during heat treatment. The oxygen diffusivity was estimated to be in the order of 10⁻⁶ and 10⁻⁵ cm²/h at 425 and 550 °C, respectively. Reduction treatment at an oxygen pressure of 215 mTorr increased the effective density of photorefractive charges about three times from 8.0×10¹⁵ to 2.2×10¹⁶ cm⁻³ and made the charge transport more electron-dominant. As a result, the maximum gain coefficient improved from 5.5 to 13.8 cm⁻¹. A diffraction efficiency as high as 70% was achieved in a reduced crystal.     

Enhancement of Er I13/2 population in Y2O3 by energy transfer to Ce

We report measurements of the energy transfer between Er³⁺ and Ce³⁺ in Y₂O₃. The transition between the Er^{3+ 4}I_11/2 and ⁴I_13/2 excited states can be stimulated by energy transfer to Ce³⁺, augmenting the population in the ⁴I_13/2 state at the expense of that in the ⁴I_11/2 state. Experiments were performed on Y₂O₃ planar waveguides doped with 0.2 at.% erbium and 0–0.42 at.% cerium by ion implantation. From measurements of Er³⁺ decay rates as a function of cerium concentration we derive an energy transfer rate constant of 1.3×10⁻¹⁸ cm³/s. The efficiency of the energy transfer amounts to 0.47 at 0.42 at.% cerium. The energy transfer rate constant measured in Y₂O₃ is two times smaller for Er³⁺→Ce³⁺ than that for Er³⁺→Eu³⁺ in the same material.     

Nanocrystallization of SrBi2Nb2O9 from glasses in the system Li2B4O7---SrO---Bi2O3---Nb2O5

Transparent glasses in the system (100−x)Li₂B₄O₇–x(SrO---Bi₂O₃---Nb₂O₅) (10≤x≤60) (in molar ratio) were fabricated by a conventional melt-quenching technique. Amorphous and glassy characteristics of the as-quenched samples were established via X-ray powder diffraction (XRD) and differential thermal analyses (DTA) respectively. Glass–ceramics embedded with strontium bismuth niobate, SrBi₂Nb₂O₉ (SBN) nanocrystals were produced by heat-treating the as-quenched glasses at temperatures higher than 500 °C. Perovskite SBN phase formation through an intermediate fluorite phase in the glass matrix was confirmed by XRD and transmission electron microscopy (TEM). Infrared and Raman spectroscopic studies corroborate the observation of fluorite phase formation. The dielectric constant (_r) and the loss factor (D) for the lithium borate, Li₂B₄O₇ (LBO) glass comprising randomly oriented SBN nanocrystals were determined and compared with those predicted based on the various dielectric mixture rule formalism. The dielectric constant was found to increase with increasing SBN content in LBO glass matrix.     

(Fe,Ti) 16N2 films with high saturation magnetization prepared by facing target sputtering

(Fe,Ti)-N films with a Ti concentration of 10 at.% were prepared on Si(100) and NaCl substrates by facing targets sputtering. The effects of the nitrogen pressure (P_N) and the substrate temperature (T_s) on the formation of various (Fe,Ti)-N phases and their microstructures were investigated in detail. X-ray diffractometer and transmission electron microscope provided complete identification of the phases present in the films and the characterization of their microstructures. Films deposited at a lower P_N = 1 3 × 10⁻² Pa or a lower T_s = RT consist of mainly -phase. Films deposited at a higher P_N = 1.3 2 × 10⁻¹ Pa or a higher T_s = 200 °C contain a great many γ' and Fe₂N phases with a higher nitrogen content. When P_N = 4 7 × 10⁻² Pa and T_s = 100 150 °C, it is advantageous to the formation of ′' phase. These films exhibit a high saturation magnetization (M_s) up to the range of 2.3 2.5 T, which is larger than that of pure iron.     

Synthesis and the luminescent properties of europium-activated Ca2SnO4 phosphors

The synthesis and photoluminescent (PL) properties of calcium stannate crystals doped with europium grown by mechanically activated in a high energy vibro-mill have been investigated. The characteristics of Ca₂SnO₄:Eu³⁺ phosphors were found to depend on the amounts of europium ions. The XRD profiles revealed that the system, (Ca_1−xEu_x)₂SnO₄, could form stable solid solutions in the composition range of x = 0–7% after being calcined at 1200 °C. The calcined powders emit bright red luminescence centered at 618 nm due to ⁵D₀ → ⁷F₂ electric dipole transition. Both XRD data and the emission ratio of (⁵D₀ → ⁷F₂)/(⁵D₀ → ⁷F₁) reveal that the site symmetry of Eu³⁺ ions decreases with increasing doping concentration. The maximum PL intensity has been obtained for 7 mol% concentration of Eu³⁺ in Ca₂SnO₄.     

Optical properties and energy transfer among Nd in Nd:Ca2Al2SiO7 crystals for diode pumped lasers

The energy levels of neodymium in the Nd³⁺:Ca₂Al₂SiO₇ (CAS) laser material with gehlenite structure are reported. As the Nd³⁺:Ca₂Al₂SiO₇ compound presents a broad absorption around 806 nm, it is a good candidate for diode pumped laser. The ⁴F_3/2→⁴I_9/2 and ⁴F_3/2→⁴I11/2 emission have been recorded and the fluorescence branching ratios calculated from the Judd-Ofelt analysis are 0.41 and 0.47 respectively. The emission cross section at 1.06 μm (⁴F_3/2→⁴I11/2 transition) is 5 × 10^-20 cm². The decay profiles of the Nd³⁺ emission have been analyzed for several Nd³⁺ concentrations using the kinetic microparameters related to the cross relaxation ( and R₀≈6 Å) and the energy migration probabilities ( ). In the Nd:CAS laser material, the optimal concentration corresponding to the maximum of the fluorescence intensity is determined to be around 2.7 × 10²⁰ Nd³⁺ ions cm^-3. The Nd³⁺-Nd³⁺ interactions are not very strong in this material as the optical concentration value is two times higher than in the Nd:YAG laser material.     

rGO/PANI/MnO2三元复合材料的制备和电化学性能

用水热合成法和冻干操作制备石墨烯/聚苯胺/二氧化锰三元复合材料(rGO/PANI/MnO₂),使用X射线衍射(XRD)、X射线光电子能谱(XPS)和扫描电子显微镜(SEM)对其进行了表征。结果表明,用这种简单高效的方法制备的复合材料,具有相互交联的网络状结构和自支撑特性。在反应过程中MnO₂与聚苯胺形成不规则的块状结构,共沉积在石墨烯自组装形成的网络片层上。这种复合材料具有良好的电容性能,比电容为388 F·g-1(0.5 A·g^-1),优于单纯的石墨烯(rGO,234 F·g-1)和聚苯胺电极(PANI,176 F·g-1)。使用这种复合材料作为正极、rGO作为负极组装的一种不对称超级电容器,能在0～1.6 V范围内可逆循环,功率密度为17.48 W·kg^-1时最大能量密度为13.5 Wh·kg^-1。     

Effect of Al2O3 particles on mechanical properties of directionally solidified intermetallic Ti–46Al–2W–0.5Si alloy

The effect of Al₂O₃ particles on microhardness and room-temperature compression properties of directionally solidified (DS) intermetallic Ti–46Al–2W–0.5Si (at.%) alloy was studied. The ingots with various volume fractions of Al₂O₃ particles and mean ₂–₂ interlamellar spacings were prepared by directional solidification at constant growth rates ranging from 2.78×10⁻⁶ to 1.18×10⁻⁴ ms⁻¹ in alumina moulds. The ingots with constant volume fraction of Al₂O₃ particles and various mean interlamellar spacings were prepared by directional solidification at a growth rate of 1.18×10⁻⁴ ms⁻¹ and subsequent solution annealing followed by cooling at constant rates varying between 0.078 and 1.889 K s⁻¹. The mean ₂–₂ interlamellar spacing λ for both DS and heat-treated (HT) ingots decreased with increasing cooling rate according to the relationship λ∝ ^−0.46. In DS ingots, microhardness, ultimate compression strength, yield strength and plastic deformation to fracture increased with increasing cooling rate. In HT ingots, microhardness and yield strength increased and ultimate compression strength and plastic deformation to fracture decreased with increasing cooling rate. The yield stress increased with decreasing interlamellar spacing and increasing volume fraction of Al₂O₃ particles. A linear relationship between the Vickers microhardness and yield stress was found for both DS and HT ingots. A simple model including the effect of interlamellar spacing and increasing volume fraction of Al₂O₃ particles was proposed for the prediction of the yield stress.     

Optically active Er–Yb codoped Y2O3 films produced by pulsed laser deposition

Optically active Er³⁺:Yb³⁺ codoped Y₂O₃ films have been produced on c-cut sapphire substrates by pulsed laser deposition from ceramic Er:Yb:Y₂O₃ targets having different rare-earth concentrations. Stoichiometic films with very high rare-earth concentrations (up to 5.5 × 10²¹ at cm^− 3) have been achieved by using a low oxygen pressure (1 Pa) during deposition whereas higher pressures lead to films having excess of oxygen. The crystalline structure of such stoichiometric films was found to worsen the thicker the films are. Their luminescence at 1.53 μm and up-conversion effects have been studied by pumping the Yb³⁺ at 0.974 μm. The highest lifetime value (up to 4.6 ms) is achieved in films having Er concentrations of ≈ 3.5 × 10²⁰ at cm^− 3 and total rare-earth concentration ≈ 1.8 × 10²¹ at cm^− 3. All the stoichiometric films irrespective of their rare-earth concentration or crystalline quality have shown no significant up-conversion.     

Preparation and optical properties of sol–gel derived Er-doped Al2O3–Ta2O5 films

Thin films of the system xAl₂O₃–(100 − x)Ta₂O₅–1Er₂O₃ were prepared by a sol–gel method and a dip-coating technique. The influences of the composition and the crystallization of the films on Er³⁺ optical properties were investigated. Results of X-ray diffraction indicated that the crystallization temperature of Ta₂O₅ increased from 800 to 1000 °C with increased values of x. In crystallized films, the intensities of the visible fluorescence and upconversion fluorescence tend to decrease with an increase in x values, due to the high phonon energy of Al₂O₃; the strongest fluorescence is observed in a crystallized film for x = 4 heat treated at 1000 °C. In amorphous films obtained by heat treatment at relatively low temperatures the Er³⁺ fluorescence could not be observed because strong fluorescence from organic residues remaining in the films thoroughly covered the Er³⁺ fluorescence. On the other hand, the Er³⁺ upconversion fluorescence in the amorphous films was observed to be stronger than that in the crystallized films. The strongest upconversion fluorescence is observed in an amorphous film for x = 75 heat treated at 800 °C.     

Influence of conventional furnace and rapid thermal annealing on the quality of polycrystalline β-FeSi2 thin films grown from vapor-deposited Fe/Si multilayers

Thin films of polycrystalline β-FeSi₂ were grown on (100) Si substrates of high resistivity by electron beam evaporation of Si/Fe ultrathin multilayers and subsequent annealing by conventional vacuum furnace (CVF) and rapid thermal annealing (RTA) for 1 h and 30 s, respectively, in the temperature range from 600 to 900°C. X-ray diffraction, Raman spectroscopy, spectroscopic ellipsometry, resistivity and Hall measurements were employed for characterization of the silicide layers quality in terms of the annealing conditions. For the silicide layers prepared by CVF annealing, although the grain size increase with increasing the annealing temperature, the optimum temperature to obtain the higher material quality (carrier mobility of the order of 100 cm² Vs⁻¹ and carrier concentration of about 1 × 10¹⁷ cm⁻³) is about 700°C. At higher annealing temperatures, the quality of the material is degraded due to the presence of the oxide Fe₂O₃. In the case of the silicides prepared by RTA, the quality of the material is improved progressively with increasing the annealing temperature up to 900°C.     

Excited-state absorption at 1.57 μm in U:CaF2 and Co:ZnSe saturable absorbers

Appreciable excited-state absorption (ESA) in U²⁺:CaF₂ and Co²⁺:ZnSe saturable absorbers was measured at λ=1.573 μm by optical transmission versus light fluence curves of 30–40 ns long pulses. The ground- and excited-state absorption cross-sections obtained were (9.15±0.3)×10⁻²⁰ and (3.6±0.2)×10⁻²⁰ cm², respectively, for U²⁺:CaF₂, and (57±4)×10⁻²⁰ and (12.5±1)×10⁻²⁰ cm² for Co²⁺:ZnSe. Thus, ESA is not negligible in U²⁺:CaF₂ and Co²⁺:ZnSe, as previously estimated.     

Infrared optical properties of Bi2Ti2O7 thin films by spectroscopic ellipsometry

Bi₂Ti₂O₇ thin films have been grown directly on n-type GaAs (1 0 0) by the chemical solution decomposition technique. X-ray diffraction analysis shows that the Bi₂Ti₂O₇ thin films are polycrystalline. The optical properties of the thin films are investigated using infrared spectroscopic ellipsometry (3.0–12.5 μm). By fitting the measured ellipsometric parameter (Ψ and Δ) data with a three-phase model (air/Bi₂Ti₂O₇/GaAs), and Lorentz–Drude dispersion relation, the optical constants and thickness of the thin films have been obtained simultaneously. The refractive index and extinction coefficient increase with increasing wavelength. The fitted plasma frequency ω_p is 1.64×10¹⁴ Hz, and the electron collision frequency γ is 1.05×10¹⁴ Hz, and it states that the electron average scattering time is 0.95×10⁻¹⁴ s. The absorption coefficient variation with respect to increasing wavelength has been obtained.