提高C_Z重掺锑硅单晶质量和成品率的研究

由于直拉重掺锑硅单晶存在截面电阻率均匀性差、杂质管道、杂质条纹、析出、位错等问题,在生产中不仅产品成品率低,而且产品的质量和数量都不能满足器件生产的需要。本文研究产生上述问题的诸因素,分析目前国内拉制重掺锑硅单晶的工艺和几种典型的热系统,提出运用减压拉晶法制备重掺锑硅单晶的工艺。这项工艺对提高直拉重掺锑硅单晶的质量和成品率都有明显的效果。     

重掺锑硅单晶制备中锑的蒸发速率常数的测定

重掺锑硅单晶制备中锑的蒸发速率常数的测定常青，曾世铭，何林，王君毅（北京有色金属研究总院１０００８８）关键词：硅单晶，锑，掺杂，蒸发速率，测定（一）实验重掺锑硅单晶是在ＣＧ－３０００型直拉单晶炉上研制的，直径为８２ｍｍ，晶向（１１１）。石英坩埚直径为...     

重掺锑硅单晶的生长

在直拉(CZ)法生长的重掺锑硅单晶中,由于锑在硅中的特性,造成无位错(文中指No<1000个/厘米~2)晶体生长的困难,同时断面电阻率均匀性也难以控制,严重影响了单晶的成品率。 本实验用改变动态工艺参数方法调整晶体固液界面,以控制一个微凸等温面,取得了无位错且电阻率分布较为均匀的晶体生长条件。使重掺锑硅单晶成品率达到40％。工艺基本稳定。     

直拉硅单晶时旋转磁场的获得

一、引言大规模和超大规模集成电路的发展,对硅单晶质量提出了越来越高的要求。直拉硅单晶中的杂质氧,使晶体在生长或器件制造的热处理过程中,产生堆垛层错、位错环和硅氧沉淀等缺陷。另一方面,氧化物沉淀引入的位错对表面沾污有本征吸杂的作用。因此硅中氧浓度是单晶质量的重要标志。一般直拉硅单晶中的氧浓度都超过1×10~(18)原子/厘米~3,而且单晶头部含量高于尾部。纵向     

氧沉淀对直拉硅单晶硬度的影响

研究了氧沉淀对直拉(CZ)硅单晶维氏硬度的影响.研究表明,在发生一定程度氧沉淀的情况下,硅单晶的硬度会由于氧沉淀导致的间隙氧浓度的降低而减小,此时间隙氧原子的固溶强化作用对硅单晶硬度具有显著的影响;而当氧沉淀足够显著时,由于氧沉淀的密度和尺寸较大,氧沉淀在硅单晶中的第二相强化作用得以显现,此时硅单晶的硬度不随间隙氧浓度的降低而减小,反而有较为显著的提高.     

φ76.2mm重掺砷硅单晶的研制

本文就如何在TDR-40A单晶炉上拉制出φ76.2mm重掺砷硅单晶作了介绍,提供了试验装置,给出了工艺条件及试验结果,并对重掺砷和重掺锑晶体的异同点进行了初步讨论。重掺锑硅单晶比重掺砷单晶需要更大的(dT/dz)_L,重掺砷硅单晶与重掺锑硅单晶同样有(111)小平面存在,但没有杂质析出现象。     

掺氮区熔硅单晶

一、前言直拉硅单晶中的氧原子,一般含量为10~17～10~18厘米~(-3),这些氧原子一方面能抑制器件制作过程中位错的产生;另一方面能通过内吸除效应,把硅晶体中的有害杂质吸除。同时氧沉淀在硅晶体中,能增强晶体的机械强度,减少高温扩散中的硅片翘曲形变,所以集成电路中广泛采用直拉硅单晶。但直拉硅单晶存在着坩埚沾污和氧的有害效应,即氧施主问题,不容易拉出高电阻率的晶体,也就不能制作高电压的器件。     

Φ125mm硅单晶的控氧技术

Φ１２５ｍｍ硅单晶的控氧技术张果虎常青方锋吴志强郝玉清秦福（北京有色金属研究总院，北京１０００８８）关键词：硅单晶氧含量控氧技术坩埚结构１引言为满足不同的器件对硅片氧含量的不同要求，需要更精确地控制直拉硅单晶中的氧含量及氧梯度。单晶中的氧有两方面的作...     

硅中的点缺陷的控制和利用

介绍依靠拉晶速度和固液界面处的轴向温度梯度之比，影响空位和自间隙原子在直拉硅单晶中的分布。合理设计热场分布，减少直拉硅单晶中的缺陷。低剂量氧离子注入能降低SIMOX硅片项层硅中的间隙原子浓度，从而降低穿透位错的密度。最近开发了一种称为MDZ的内吸除新技术，通过快速热退火控制硅片中空位浓度的分布，从而得到理想的氧沉淀行为，实现了可靠、可重复的内吸除。     

NTD Cz—Si中辐照缺陷的控制与利用

本文研究了直拉硅单晶和中子嬗变掺杂直拉硅单晶在1000℃、1100℃和1200℃不同恒温时间的退火行为,发现NTD CZ-Si在1100℃、4h退火即可完成内吸杂(IG)处理,并进行了简单的解释。     

Dislocation mobility in heavily doped silicon single crystals

Dislocation mobility has been studied in heavily doped silicon single crystals by kilohertz internal friction measurements. The dopant effect on dislocation mobility previously reported in germanium and silicon under plastic deformation has now been seen in silicon under the influence of much lower applied stresses. The low strains and only moderately elevated temperatures used in the present investigation allow the dislocations to oscillate only slightly about their equilibrium positions. The results from the slight dislocation excursions have led to a unified kink model of dislocation damping in silicon. The dopant effect on dislocation mobility is attributed directly to the surplus electronic carriers in the immediate vicinity of the dislocation kink. The intrinsic carrier concentration in the local vicinity of the dislocation has been found to be 100 times greater than the corresponding bulk value.     

Effect of Rapid Thermal Process on Oxygen Precipitates in Heavily Sb-Doped Silicon Wafer

Oxygen precipitates in heavily Sb-doped silicon after rapid thermal process (RTP) in Ar ambient were investigated by RTP at high temperature following annealing at 800 ℃ for 4 h and 1000 ℃ for 16 h. RTP temperature and cooling rates were changed from 1200 to 1260 ℃ and from 10 to 100 ℃·s-1, respectively. The experiment results show that high density of oxygen precipitates is observed in heavily Sb-doped wafer. It is found that the oxygen precipitates in heavily Sb-doped silicon are enhanced at high cooling rate.     

Holmium-doped Porous Silicon Prepared by a New Electrochemical Approach and Its Photoluminescence

Ｐｏｒｏｕｓｓｉｌｉｃｏｎ（ＰＳ）ｗａｓｆｏｕｎｄｔｏｅｍｉｔｖｉｓｉｂｌｅｌｕｍｉｎｅｓｃｅｎｃｅａｔｒｏｏｍｔｅｍｐｅｒａｔｕｒｅｂｙＣａｎｈａｍｉｎ１９９０［１］．Ｔｈｉｓｐｈｅｎｏｍｅｎｏｎｉｍｐｌｉｅｄａｐｏｔｅｎｔｉａｌａｐｐｌｉｃａｔｉ...     

Observations on the evolution of potassium bubbles in tungsten ingots during sintering

The present article describes the evolution of potassium bubbles during sintering of tungsten ingots pressed from doped powder. In the manufacture of incandescent lamp filaments, tungsten powder is produced by reduction of blue tungstic oxide which is doped with potassium disilicate and aluminum chloride. The reduced tungsten particles contain submicron pores. Analytical transmission electron microscopy (TEM) identifed two types of pores in reduced tungsten powder. First, there are pores which contain particles which consist of potassium, aluminum, and silicon, and second, there are pores which contain aluminum and silicon alone. On sintering at 2100 °C or 2300 °C, potassium aluminosilicate particles migrate together with grain boundaries to necks which form between tungsten particles. Sintering at 2100 °C or 2300 °C reduces the potassium, aluminum, and silicon concentrations of the particles. Atomic absorption spectroscopy (AAS) also measured reductions in the bulk potassium, aluminum, and silicon concentrations. In the present study, analytical TEM and Auger electron spectroscopy (AES) were used to describe the decomposition of dopant particles and the evolution of elemental potassium bubbles in sintered ingots.     

无取向硅钢热连轧工作辊热磨辊

为了解决正常生产结构条件下,无取向硅钢热连轧工作辊磨削辊形受热辊形影响难以获得工艺制度期望的初始辊形问题,结合无取向硅钢热轧生产过程,采用二维有限差分法建立了工作辊轧制过程中的工作辊温度场计算数学模型,使用有限元软件ANSYS建立了工作辊下机后空冷和喷淋冷却混和工艺条件下温度场模型,开展了无取向硅钢热轧工作辊一个完整使用周期内的温度场和热辊形仿真研究,提出了无取向硅钢工作辊热磨辊数学模型和热磨辊工艺制度,并投入生产应用.相同生产工艺条件下,1700热连轧机无取向硅钢轧制应用热磨模型和热磨工艺制度后,产品的凸度和楔形双达标率由67.39%提高到74.57%的明显生产实绩.     

Preparation of Rare Earth Doped Alumina-Siloxane Gel and Its ER Effect

Poly(methyl methacrylate) (PMMA) was used to wrap alumina-siloxane sol through emulsion polymerization. A kind of suspensions with notable ER effect was produced by fully mixing the prepared microcapsule with silicon oil. Meanwhile a series of PMMA wrapped alumina - siloxane gel doped with rare earths was obtained and its ER effect was tested, like viscosity of different rare earth ion doped samples in different powder concentrations and at different temperatures, at the same time, leak current density and dielectric constant were measured. Resuits show that the ER effect of this suspension is remarkable, and its stability is much better. The condition of emulsion polymerization and the mechanism of effect are discussed.     

Monolithic crystalline silicon solar cells with SiN_x layers doped with Tb~(3+) and Yb~(3+) rare-earth ions

In this study, we propose the fabrication of monolithic crystalline silicon solar cells with Tb~(3+) and Yb~(3+)-doped silicon nitride(SiN_x) layers by low-cost screen-printing methods. The performances of c-Si solar cells can be enhanced by rare-earth ions doped SiN_x layers via the mechanism of spectrum conversion.These SiN_x doped and codoped thin films were deposited by reactive magnetron co-sputtering and integrated as the antireflection coating layers in c-Si solar cells. The characterizations of SiN_x, SiN_x:Tb~(3+) tand SiN_x:Tb~(3+)-Yb~(3+) thin films were conducted by means of photoluminescence, Rutherford backscattering spectroscopy, Ellipsometry spectroscopy and Fourier transform infrared measurements. Their composition and refractive index was optimized to obtain good anti-reflection coating layer for c-Si solar cells.Transmission electron microscopy performs the uniform coatings on the textured emitter of c-Si solar cells. After the metallization process, we demonstrate monolithic c-Si solar cells with spectrum conversion layers, which lead to a relative increase by 1.34% in the conversion efficiency.     

Fluorescence Properties of Eu3+/Gd3+/Citric Acid Mixed Complexes Doping in Silicon Rubber Matrix

Series of doped rare earth complexes-EuxGd(1-x)(CA)3·nH2O (CA=citric acid) were synthesized. Some characterizations were taken for these complexes. The experimental results shows that the doped rare earth complexes have the best fluorescence property when the ratio of Eu and Gd is from 0.7 to 0.3. Silicon rubber-based composites were prepared by mechanical blending the EuxGd(1-x)(CA)3·nH2O and silicon rubber. Then, the fluorescent property of the composites was studied. It is found that the fluorescence intensity of the composites increase linearly with the contents of the rare earth complexes increasing.     

Suppression of inner energy dissipation in Yb-doped NaErF4 upconversion nanocrystals through an energy cycling strategy

Suppression of the inner energy dissipation,related to the lattice phonons and inner defects,in lanthanide doped upco nversion luminescent materials remains a formidable challenge.Herein,we reveal an energy cycling strategy capable of suppressing the inner energy dissipation in lanthanide doped upconversion nanocrystals.Yb³⁺ ions were introduced in Er³⁺ heavily doped nanocrystals as an energy reservoir to compete with the inner energy dissipation.The detailed energy cycling...     

液—固掺杂垂熔钨坯中改性元素的行为

对传统粉末冶金方法(液—固混合制成掺杂钨粉,经过压制、烧结、旋锻、拉拔等工序)制成的钨坯和钨丝,用扫描电子显微镜进行了断面及磨面分析。结果发现:在晶界孔穴内,元素Si和Al的含量丰富;在晶内孔穴内,除元素Si、Al外,还富集了元素K。只用钾泡理论解释改性元素改善高温钨丝的抗下垂性能是不够的,应以分子筛理论和SiO_2-Al_2O_3系统相图予以补充。