Derivation of efficiency factors for uneven irradiation on a fin absorber

In the equation for thermal energy output from a flat-plate solar collector (written as a function of the collector mean heat carrier temperature), both the gain and the loss terms are multiplied by the collector efficiency factor, F^′. For a concentrating collector with an uneven (non-uniform) irradiation on the absorber, the efficiency factor for the gain term, here called the optical efficiency factor, F^′_c, is different from F^′ and is a function of the irradiation distribution on the absorber. If the heat loss coefficient is assumed to be constant across the fin, the optical efficiency factor for absorbed irradiation at a certain distance from the edge of the absorber is independent of absorbed irradiation at other locations and can therefore be expressed F^′_c(x), where x is the distance from the edge of the absorber. Close to the edge, F^′_c(x)<F^′ and close to the pipe, F^′_c(x)>F^′. In this paper formulas are derived for calculating F^′_c(x) for a fin absorber with constant fin thickness. By weighting F^′_c(x) with the absorbed irradiance, S_c(x), and integrating across the absorber, an absorber average optical efficiency factor, F^′_c,a, is obtained. This value replaces F^′ in the gain term of the equation for thermal energy output. If, instead, the energy output equation is expressed as a function of the inlet temperature, F^′_c,a can be used for calculating a corresponding heat removal factor for uneven irradiation, F_R,c. Formulas for calculating the temperature distribution across the absorber for the case of uneven irradiation are also derived.     

Thermal loss coefficients of low-density silica aerogel tiles

The thermal losses of a monolithic low-density SiO₂ aerogel tile (thickness d = 9 mm, density = 80 kg/m³) have been determined in our evacuable guarded hot plate system LOLA II. The measurements were performed for two values of boundary emissivities ( ≈ 0.05 and 0.9) under variation of temperature and of gas pressure for several types of gases. From our results we conclude that low-density silica aerogel tiles about 10 mm thickness provide excellent thermal insulation with overall loss coefficients k 0.7 W/(m² · K) at ambient temperatures (10°C or 283 K) and pressures 10 mbar. Their use in window systems and covers for passive use of solar energy thus is extremely promising. From the change of thermal losses with gas pressure, a mean free path within the (evacuated) skeleton of about 120 nm can be derived.     

Heat treatment effects on the optical properties of Sol–gel Ta2O5 thin films

In this work optical properties of Ta₂O₅ thin films with respect to heat treatment temperature were investigated. Ta₂O₅ thin films were prepared by sol–gel process using dip-coated method with a constant speed of 107 mm/min. Optical properties have been calculated from optical transmission measurements as a function of heat treatment temperature. The refractive indices and absorption coefficients were affected by heat treatment. The refractive index at λ=550 nm increased from 1.84 to 2.04 and absorption coefficient increased from 241 to 5668 cm⁻¹ when heat treatment temperature increased from 100°C to 500°C. The thickness of the film decreased from 272 to 190 nm and their optical band gap decreased from 3.68±0.09 eV to 3.51±0.08 eV for the film heated from 100°C to 500°C.     

Optical and electrochemical characteristics of sol–gel deposited iron oxide films

Homogenous, crack free iron oxide films are prepared by the sol–gel spin coating technique from a solution of iron iso-propoxide and isopropanol. The films were characterized by X-ray diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), UV-visible (UV–Vis) spectroscopy and cyclic voltammetry (CV). XRD of the films showed that they had an amorphous structure. The optical constants refractive index (n) and extinction coefficient (k) were measured by scanning spectrometer in the wavelength range of 390–990 nm. The n and k values were found n =2.3±0.01 and k =0.2±0.002 at 650 nm. The electrochemical behavior investigated in 0.5 M LiClO₄ propylene carbonate (PC) electrolyte-CV examinations showed good rechargeability of the Li⁺/e⁻ insertion extraction process beyond 300 cycles. Spectroelectrochemistry showed that these films exhibit weak cathodic coloration in the spectral range of 350–800 nm.     

Spectrally selective solar absorbers in different non-black colours

Silicon paints were prepared from yellow, ochre, dark ochre, green and blue pigments. To improve the solar absorptance, a_s, of these coatings, an existing black paint was admixed in different ratios. The optical properties of the mixed paints thus formed are expressed in terms of the Kubelka–Munk absorption and scattering coefficients in the spectral region 400–17000 nm. The scattering coefficient obtained for all paints was essentially equal. In the visible region the absorption coefficient follows the spectral characteristics of each respective colour. In the infrared absorption at 9000 nm and above 12000 nm are seen in all cases which result in a thickness-dependent increase of the thermal emittance, e_T, of the coating. The metric chroma (C_ab^*) and lightness (L^*) in CIELAB colour space were calculated for wide-angle observer in average daylight conditions. A range of non-black spectrally selective solar absorber surfaces with a_s>0.8 and e_T<0.3 have been prepared with L^*<45 and C_ab^*<10.     

Black cobalt selective coatings by spray pyrolysis for photothermal conversion of solar energy

A low cost technique of spray pyrolysis has been described for the growth of black cobalt selective surfaces on commercially available aluminum and galvanized iron substrates. Parameters of growth have been optimized by a comparative analysis of opto-thermal, structural and optical properties of these films. Optimized films on aluminum were 0.21 μm thick and had α = 0.92 and _100°C = 0.13, Films on galvanized iron substrates gave best results (α=0.91, _100°C=0.12) for film thickness 0.24 μm. Accelerated life test studies indicate that these films have good adhesion to the substrates and are stable up to 220°C.     

Heterogeneous growth of microcrystalline silicon germanium

Microcrystalline silicon germanium films showing excellent opto-electronic properties have been prepared at a substrate temperature of 195°C by radio frequency plasma enhanced chemical vapor deposition at 13.56 MHz. A white light (AM 1.5) photoconductivity of 5×10⁻⁵/Ω cm and ambipolar diffusion length of 114 nm (from SSPG) established the device quality. Films are intrinsic (Fermi level near midgap; activation energy E_a (0.49 eV) is approximately half the band gap (1.01 eV)). Performance of preliminary n–i–p solar cells (with μc-SiGe:H i-layer) on stainless steel and molybdenum substrates justify their photosensitivities. A current density of 9.44 mA/cm² has been generated in an i-layer of only 150 nm thick without any back-reflector. A deposition rate of 0.75 Å/s for such a thin layer gives this material much advantage than a μc-Si cell, where a thickness of >2 μm is needed. A high V_oc of 0.43 eV has been achieved for such a low mobility gap cell (Ge fraction 60%).     

Spectrally selective laminated glazing consisting of solar control and heat mirror coated glass: preparation, characterization and modelling of heat transfer

In this study, solar control coatings were prepared by sequential depositions of thin films of ZnS (40 nm)–CuS (150 nm) and ZnS (40 nm)–Bi₂S₃ (75 nm)–CuS (150 nm) from chemical baths on 3 mm thick commercial sheet glass. These were laminated to 3 mm thick clear glass or commercially available SnO₂ based heat mirror coating of sheet resistance 15 Ω on float glass of 3 mm thickness using a poly(ethylene vinyl acetate), EVA, sheet of 0.36 mm thickness in a vacuum process at 120 °C for 30 min. In total, the thickness of the glazing was 6.35 mm. The glazings possess visible transmittance, weighted for D65 solar spectra and sensitivity of the human eye for daylight vision, of 36% or 14% with solar absorptance of 71% or 78% depending on the coating type, i.e ZnS–CuS or ZnS–Bi₂S₃–CuS-heat mirror respectively. The solar heat gain coefficient (SHGC) was evaluated for these glazings at exterior temperatures of 15 and 32 °C for an exterior convective heat transfer coefficient (h_ex) of 6–100 Wm⁻² K⁻¹ using a mathematical model. The model predicts the extent of reduction in SHGC through the presence of the heat mirror coating as a function of h_ex and hence helps to decide on the relative benefit, which may be derived through their use in different locations. Though the deposition technique mentioned here involves longer duration compared with vacuum techniques, it may be developed into a low throughput, low-capital alternate technology for small-scale production.     

Structural and electrical properties of CuGaS2 thin films by electron beam evaporation

Single phase CuGaS₂ thin film with a highest diffraction peak of (1 1 2) at a diffraction angle (2θ) of 28.8° was made at a substrate temperature of 70°C, an annealing temperature of 350°C and an annealing time of 60 min. Second highest (2 0 4) peak was shown at diffraction angle of (2θ) 49.1°. Lattice constant of a and c of that CuGaS₂ thin film was 5.37 and 10.54 Å, respectively. The greatest grain size of the thin film was about 1 μm. The (1 1 2) peak of single phase of CuGaS₂ thin film at an annealing temperature of 350°C with excess S supply appeared at a little higher about 10% than that of no excess S supply. The resistivity, mobility and hole density at room temperature of p-type CuGaS₂ thin film was 1.4 Ω cm, 15 cm²/V s and 2.9×10¹⁷ cm⁻³, respectively. It was known that carrier concentration had considerable effect than mobility on a variety of resistivity of the fabricated CuGaS₂ thin film, and the polycrystalline CuGaS₂ thin films were made at these conditions were all p-type.     

High-pressure synthesis of novel compounds in an Mg–Ni system

High-pressure works are attractive techniques to obtain new compounds, such as alkali or alkaline earth metal-based systems. The atomic radius of Mg under GPa pressure is considerably smaller compared with transition metals; as such, it may be preferable to synthesize novel intermetallic compounds and hydrides by using high-pressure techniques. In this study, novel compounds were synthesized in an Mg–Ni system by a high-pressure technique using a cubic-anvil-type apparatus.A novel Mg₆Ni intermetallic compound was obtained by exposing a mixture of Mg and Ni to 6 GPa at 900 °C for 2 h. The crystal structure of the compound is a tetragonal F-43m structure with a lattice parameter of a=1.9987(1) nm. This compound decomposed to Mg and Mg₂Ni phases at 278 °C with exothermic reaction.As is well known, MgNi₂ does not form hydrides under conventional hydrogenation conditions, hence we investigated the reactivity of MgNi₂ with highly pressurized hydrogen. It was found that the MgNi₂ was able to form MgNi₂H_3.2 by treatment at 700 °C for 2 h under 5 GPa with a hydrogen source, leading to a hydrogen capacity of 2.23 mass%. This novel hydride was found to be a tetragonal MoSi₂-type structure (I4/mmm) with lattice parameters of a=0.327(3) nm and c=0.878(9) nm. The dehydrogenation of this hydride occurred at 187 °C with endothermic reaction, and caused decomposition into C36-type MgNi₂. This hydride had solubility of Ni content and its thermal stability decreased with increasing Ni content.     

Hybrid solar and electrically controlled transmission of light filters

The investigations show that it is possible to develop hybrid light filters which could be switched by solar as well as by electrical energy. The light filters are based on thermotropic gels changing their transmission depending on the concentration of the cross-linker from 60% to 80% to 1% in the temperature range 29–36°C. Detailed investigations of the electrical switching process show that the switching times significantly decrease with increasing thickness of the tin-doped indium oxide (ITO) used as transparent electrodes. The switching times could be varied from 3 to over 50 min. Furthermore the required wattage for the switching process significantly decreases with increasing thickness of the ITO-layers. A gel layer having a thickness of 2 mm is quite enough to realize changes in the transmission from about 62% to 1%. Comparable results were obtained for light filters having a size of either 25 or 180 cm², respectively. Therefore, it should be possible to transfer these results to light filters having a size of 0.5-1 m².     

Characteristics of the CdZnS thin film doped by thermal diffusion of vacuum evaporated indium films

Effects of the thickness of indium films and the annealing temperature on structural, optical and electrical properties of chemically deposited cadmium zinc sulfide (CdZnS) films were investigated. X-ray diffraction patterns of CdZnS films indicate that the minimum thickness and annealing temperature for the formation of an In₂O₃ layer, which acts as a barrier preventing the out-diffusion of indium, are 20 nm and 350°C, respectively. In₂O₃ layers give the high optical transmittance due to their transparent properties. As the thickness of indium film and the annealing temperature increase, the conductivity of CdZnS films improves and the lowest resistivity of 0.3 Ω cm is attained for CdZnS films with 40 nm indium coating and annealed at 450°C.     

Optimization of process parameters in a large-area hot-wire CVD reactor for the deposition of amorphous silicon (a-Si:H) for solar cell application with highly uniform material quality

Scale-up of a-Si:H-based thin film applications such as solar cells, entirely or partly prepared by hot-wire chemical vapor deposition (HWCVD), requires research on the deposition process in a large-area HWCVD system. The influence of gas supply and filament geometry on thickness uniformity has already been reported, but their influence on material quality is systematically studied for the first time. The optimization of deposition parameters for obtaining best material quality in our large-area HWCVD system resulted in an optimum filament temperature, T_fil≈1600°C, pressure, p=8 mTorr and silane flow, F(SiH₄)=100 sccm, keeping the substrate temperature at T_S=200°C. A special gas supply (gas shower with tiny holes of uniform size) and a filament grid, consisting of six filaments with an interfilament distance, d_fil=4 cm were used. The optimum filament-to-substrate distance was found to be d_fil–S=8.4 cm. While studying the influence of different d_fil and gas supply configurations on the material quality, the above-mentioned setup and parameters yield best results for both uniformity and material quality. With the setup mentioned, we could achieve device quality a-Si:H films with a thickness uniformity of ±2.5% on a circular area of 20 cm in diameter. The material, grown at a deposition rate of r_d≈4 Å/s, was characterized on nine positions of the 30 cm×30 cm substrate area, and revealed reasonable uniformity of the opto-electronic properties, e.g photosensitivity, σ_Ph/σ_D=(2.46±0.7)×10⁵, microstructure factor, R=0.17±0.05, defect densities, N_d(PDS)=(2.06±0.6)×10¹⁷ cm⁻³ and N_d(CPM)=(2.05±0.5)×10¹⁶ cm⁻³ (film properties are given as mean values and standard deviations). Finally, we fabricated pin solar cells, with the i-layer deposited on small-area p-substrates distributed over an area of 20 cm×20 cm in this large-area deposition system, and achieved high uniformity of the cell parameters with initial efficiencies of η=(6.1±0.2)% on the 20 cm×20 cm area.     

High-Ts amorphous top cells for increased top cell currents in micromorph tandem cells

In the present paper, the authors discuss the application of amorphous p–i–n solar cells containing i-layers which are deposited at high substrate temperatures as top cells in amorphous silicon/microcrystalline silicon tandem (“micromorph”) solar cells. Increasing the substrate temperature for the deposition of intrinsic a-Si : H results in a reduced optical gap. The optical absorption is enhanced and thereby the current generation. A high-current generation within a relatively thin amorphous top cell is very interesting in the context of micromorph tandem cells, where the amorphous top cell should contribute a current of at least 13 mA/cm² for a total cell current density of 26 mA/cm². A detailed study of the intrinsic material deposited by VHF-GD at 70 MHz at substrate temperatures between 220°C and 360°C is presented, including samples deposited from hydrogen-diluted silane plasmas. The stability of the films against light soaking is investigated employing the μ₀τ₀ parameter, which has been shown to be directly correlated to the cell performance. The paper discusses in detail the technological problems arising from the insertion of i-layers deposited at high substrate temperatures into solar cells. These problems are specially pronounced in the case of cells in the p–i–n (superstrate) structure. The authors demonstrate that an appropriate interface layer at the p/i-interface can largely reduce the detrimental effects of i-layer deposition at high temperatures. Finally, the application of such optimized high-temperature amorphous cells as top cells in micromorph tandem cells is discussed. Current densities of 13 mA/cm² in the top cell are available with a top cell i-layer thickness of only 250 nm.     

Design and performance simulation of a new solar continuous solid adsorption refrigeration and heating hybrid system

In this paper, the design of a new continuous solid adsorption refrigeration and heating hybrid system driven by solar energy was proposed, and its performance simulation and analysis were made under the normal working conditions. Some performance parameters of the system were obtained, and the effects of water mass in water tank on the system's COP_cooling, COP_heating etc. were discussed. The simulation indicated: the system could refrigerate continuously with such a design, and at the conditions of that the daily sun-radiation is 21.6 MJ, the mean ambient temperature is 29.9°C, the evaporating temperature is 5°C, the heat-collecting coefficient of upper bed η is 60%, and the heat-transfer coefficient between lower bed and ambient α is 2 W/m² K, by day a hybrid system of single combined bed could furnish 30 kg hot water of 47.8°C, and had a mean COP_cooling of 0.18, a mean COP_heating of 0.34, a continuous mean SCP_a of 17.6 W/kg, a continuous mean SCP_c of 87.8 W/m², and a continuous mean SHP_c of 165.9 W/m²; and at night it had a cooling capacity of 0.26 MJ/kg of adsorbent, and a cooling capacity of 1.3 MJ/m² of heat-collecting area.     

Pre-existence of HxWO3 in e-beam deposited WO3 films

Structural and optical properties of e-beam deposited tungsten trioxide (WO₃) films in as-deposited and electrochemically coloured states were investigated by spectrophotometric and XRD techniques. These investigations have shown the as-deposited WO₃ films to be porous and with small amount of H_xWO₃ pre-existing in them. The films further facilitate insertion of H⁺ ions on colouration resulting in tetragonal H_xWO₃ with a = 4.74Å and c = 3.19Å.     

Structure–property relationships in electrochromic WO3 films deposited by reactive sputtering

WO_x electrochromic (EC) films deposited by DC magnetron sputtering technique were investigated by XRD and STM measurements. The reversible microstructure changes of the WO_x film between the bleached and colored EC states were revealed. The study indicates that the amorphous as-deposited WO_x film (a-WO_x) is of amorphous microstructure both in bleached and colored states; however, the crystalline WO_x (c-WO_x) is stoichiometric triclinic lattice WO₃ in bleached state (the lattice parameters: a=7.2944 Å, b=7.4855 Å, c=3.7958 Å, α=89.38°, β=90.42°, γ=90.80°), and changes into nonstoichiometric tetragonal lattice WO_2.9 in colored state (a=b=5.336 Å, c=3.788 Å, α=β=γ=90°). The surface morphologies of the colored WO_x films are very different from those of the bleached WO_x films.     

Equations for estimating global solar radiation in data sparse regions

The knowledge of the amount of solar radiation in an area/region is very essential in the field of Solar Energy Physics. In this work two equations are put forward for estimating global solar radiation from common climate variables in data sparse regions. The first is the Hargreaves equation, R_s=0.16R_aT_d^0.5 where R_a is the extraterrestrial solar radiation and T_d is the temperature difference (maximum minus minimum), while the second is the Angstrom equation, R_s=R_a(0.28+0.39n/N) where n and N are the measured sunshine hours and the maximum daylight duration respectively. The global solar radiation estimated by the two equations for three sites, Owerri (5°28′N, 7°2′E), Umudike (5°29′N, 7°33′E) and Ilorin (8°32′N, 4°46′E), located in different climate zones of in Nigeria, West Africa, are in agreement with those of earlier workers and that from Photovoltaic Geographic Information System (PVGIS) project. The implication of this in solar photovoltaic applications has been stressed.     

Effect of annealing on the electrical, optical and structural properties of hydrogenated amorphous silicon films deposited in an asymmetric R.F. plasma CVD system at room temperature

This paper reports the effect of annealing on hydrogenated amorphous silicon films (a-Si : H) deposited by r.f. self-bias technique on cathode in an asymmetric r.f. plasma CVD system at room temperature. Detailed study of the variation of the dark and photoconductivity (σ_D and σ_ph) as a function of temperature and light intensity, surface morphology, hydrogen evolution, optical absorption, subgap absorption and related parameters, thermal and structural disorder on the optical-absorption edge, IR vibrational modes and bonded hydrogen content have been carried out on unannealed and annealed samples at different temperatures (T_a) from 100°C to 550°C. It is found that the values of σ_ph increase and that of Urbach energy (E_o), subgap defect density (N_d) and the polyhydride to monohydride ratio decrease upto T_a=250°C and beyond 250°C the values of σ_ph decrease and that of E_o, N_d and the polyhydride to monohydride ratio increase. The best opto-electronic properties with much improved σ_ph and σ_ph/σ_D and dominant monohydride bonding are obtained after annealing the room temperature deposited film at 250°C for 1 h. The σ_D data obeys a Meyer Neldel rule in annealed a-Si : H films. The value of optical band gap is found to be related to the E_o and the hydrogen content. The Urbach energy (E_o) which is a measure of the disorder is the sum of structural and thermal disorder. The structural disorder part decreases with the annealing temperature upto 300°C and thereafter it increases. The curves of optical absorption coefficient versus photon energy at different T_a converge to a common point.     

Silica aerogel granulate material for thermal insulation and daylighting

Silica aerogel granulate is a nanostructured material with high solar transmittance and low thermal conductivity. These properties offer exciting applications in building envelopes. One objective of the joint R&D project ISOTEG at ZAE Bayern was to develop and characterize a new glazing element based on granular silica aerogel. Heat transfer coefficients of less than 0.4 W/(m² K) and a total solar energy transmittance of 35% for the whole glazing unit were achieved. The glazing has a thickness of less than 50 mm. Another application for granular silica aerogel is, for example, in solar collectors.The thermal properties of the glazing as well as the optical and thermal properties of the granular aerogels are presented here. The solar transmittance of a 10 mm packed bed of silica aerogel was 53% for semi-translucent spheres and 88% for highly translucent granulate. In our heat transfer experiments the gas pressure, external pressure load, temperature and gas filling were varied. The various thermal conductivity values measured for the glazing and collector applications were compared to the values calculated using two different packed bed models. For the gas-dependent measurements the intergranular voids in the granulate were 1.0 ± 0.1 mm before loading the packed bed, 0.3 ± 0.1 mm at an external load of 3.2 bar (3.2 × 10⁵ Pa) and 0.6 ± 0.1 mm after release.A direct radiative conduction of λ_direct = 4.5 ± 0.5 × 10⁻³ W m⁻¹ K⁻¹ was obtained.