Transient response of m.o.s. transistors

The charge equation of enhancement-type m.o.s. transistors is derived. The waveforms and practical expressions of the switching times of the resistor-coupled m.o.s. switching circuit are determined.     

Transient analysis of modified t.t.l. gate

The letter derives expressions for the transient response of the modified t.t.l. NAND/NOR gate using a piecewise linear analysis. The expressions are presented in a form suitable for incorporation into a computer-aided circuit-analysis program based on the macromodelling concept and intended for the analysis of relatively large arrays of integrated-circuit logic gates. Results are compared with experimental observations.     

Interlaboratory comparison of radiation-induced attenuation inoptical fibers. III. Transient exposures

For pt.II see ibid., p.967-76 (1990). A comparison made over a period of five years of the losses induced in step-index multimode, graded-index multimode, and single-mode fibers by pulsed radiation exposure by 12 laboratories is discussed. The recoveries of the incremental attenuations from 10^-9 to 10¹ s are reported. Although a standard set of measurement parameters was attempted, differences between the laboratories are evident; possible origins for these are discussed     

Transient 2-dimensional simulation of a submicrometre gate-length m.e.s.f.e.t.

The large-signal transient step response of a 0.4 ?m-gate-length GaAs m.e.s.f.e.t. has been computed with a full 2-dimensional simulation. The falltime is saturated drift velocity limited. Details of this transient calculation and the use of a higher order [O(h4)] finite-element method are described.     

Transient frequency response of transmittance-peaked i.f. filters with application to null-zone detection

A binary f.s.k. system, where the i.f. filter has transmittance peaks at two frequencies separated by a large distance in comparison to the bit rate, is considered. Experimental confirmation of the system transient response when the filters are third-order Butterworth is presented. A brief discussion of the error probability of such a system, and a possible application of the nature of the transient response to allow null-zone detection, is given.     

Microprocessor-Based Multichannel Transient Recorder

Data acquisition of fast time varying transient phenomena relevant to structural dynamics and aerodynamic wind tunnel testing pose a number of problems such as speed, retrieval of data for analysis, number of channels, etc. To overcome these limitations, a software-based high-speed Multichannel Transient Data Acquisition system has been designed and developed. This system is built around the Burr-Brown SDM-853 Module. The data are stored in 16-kbyte MOS RAM memory. The stored data are retrieved by a low-speed system clock through a digital-to-analog converter (DAC) onto an X-Y/t plotter for hard copy.     

直挂云帆济沧海——写在《军医进修学院学报》创刊30周年

为了解决特殊环境下的瞬态高温测量,研制了一种基于黑体辐射的光纤高温测量系统.介绍了该系统的工作原理,采用"接触-非接触"测量方法和光纤光栅窄带滤波技术,分析了影响黑体空腔传感器有效发射率的各种因素,并给出了优化设计参数.试验表明,系统测温范围可达2 000℃,响应时间小于120 ms,性能稳定,抗干扰能力强.     

Natural Wax for Transient Electronics

Emerging classes of bioresorbable electronic materials serve as the basis for active biomedical implants that are capable of providing sensing, monitoring, stimulating, and other forms of function over an operating period matched to biological processes such as wound healing. These platforms are of interest because subsequent dissolution, enzymatic degradation, and/or bioresorption can eliminate the need for surgical extraction. This report introduces natural wax materials as long‐lived, hydrophobic encapsulation layers for such systems, where biodegradation eventually occurs by chain scission. Studies of wax stability as an encapsulation material demonstrate the ability to retain operation of underlying biodegradable electronic systems for durations between a few days to a few weeks during complete immersion in aqueous solutions in ex‐vivo physiological conditions. Electrically conductive composites result from the addition of tungsten micro/nanoparticles, as a conductive, printable paste with similar lifetimes. Demonstrations of these materials in partially biodegradable wireless light‐emitting diodes and near‐field communication circuits illustrate their use in functional bioresorbable electronic systems. Investigations in animal models reveal no signs of toxicity or other adverse biological responses.     

研究光解的瞬态ESR波谱技术

本文简要报导了作者研制的具有０．２μｓ时间分辨率的ＴＲＥＳＲ波谱仪，概述了光解瞬态顺磁粒子电子自旋极化的ＴＭ与ＲＰＭ的两种机理．综述了在光物理、光化学和光生物学等领域中瞬态光解ＥＳＲＪ波谱技术某些应用的研究概况．     

半导体激光器的瞬时光谱

本文叙述半导体激光器瞬时光谱研究的理论和测试系统。     

Dissolvable Metals for Transient Electronics

Reactive dissolution and its effects on electrical conduction, morphological change and chemical transformation in thin films of Mg, AZ31B Mg alloy, Zn, Fe, W, and Mo in de‐ionized (DI) water and simulated body fluids (Hanks’ solution pH 5–8) are systematically studied, to assess the potential for use of these metals in water‐soluble, that is, physically "transient", electronics. The results indicate that the electrical dissolution rates in thin films can be much different that traditionally reported corrosion rates in corresponding bulk materials. Silicon metal oxide field effect transistors (MOSFETs) built with these metals demonstrate feasibility for use in transient electronics.     

天波超视距雷达瞬态干扰抑制

天波超视距雷达(OTHR)电波通过电离层折射作下视探测,具有观察距离远,观察范围广的特点.但由于采用HF频段,且电波传播环境复杂,不仅海(地)杂波强,而且有很强的干扰,如电台干扰、工业干扰、冲击噪声、闪电冲击和流星余迹回波等.干扰分长时间干扰和瞬态干扰,瞬态干扰持续时间短、强度大.本文首先讨论OTHR接收到的瞬态干扰的特点;然后讨论了瞬态干扰的滤除方法,即采用特征分解方法滤除海杂波,或在频域直接滤除地杂波,检测出瞬态干扰的位置后,在原始信号中挖除存在瞬态干扰的回波点,并用预测内插的方法,消除瞬态干扰谱对目标掩盖作用,使目标特别是舰船目标能被检测出来;最后通过实测数据的检验.     

瞬变电磁法及其应用研究

对国内外瞬变电磁法理论研究、仪器设备的技术水平进行了充分的调研,从瞬变电磁法原理出发,阐述了有限差分法、有限元法和积分方程法这3种主要的三维数值模拟方法,详尽地叙述了瞬变电磁法在矿产勘探、煤矿勘探、工程物探和海洋勘探等领域的应用.对目前国际国内瞬变电磁仪器发展的水平与应用情况进行了研究与探讨.最后对瞬变电磁法发展的相关...     

Transient annealing of indium phosphide

Thermal treatment of semiconductor samples in the range ∼ 650 to 900°C is an integral part of planar device processing for the activation of implanted ion species. This letter describes a rapid annealing procedure for the short-term treatment of such implants, which from data obtained on InP is seen to result in high activation efficiencies and mobilities ∼ 85 percent and 2600 cm²/V.s, respectively, while at the same time minimizing surface degradation and bulk impurity redistribution.