Highly Deformable and See‐Through Polymer Light‐Emitting Diodes with All‐Conducting‐Polymer Electrodes

Despite the high expectation of deformable and see‐through displays for future ubiquitous society, current light‐emitting diodes (LEDs) fail to meet the desired mechanical and optical properties, mainly because of the fragile transparent conducting oxides and opaque metal electrodes. Here, by introducing a highly conductive nanofibrillated conducting polymer (CP) as both deformable transparent anode and cathode, ultraflexible and see‐through polymer LEDs (PLEDs) are demonstrated. The CP‐based PLEDs exhibit outstanding dual‐side light‐outcoupling performance with a high optical transmittance of 75% at a wavelength of 550 nm and with an excellent mechanical durability of 9% bending strain. Moreover, the CP‐based PLEDs fabricated on 4 µm thick plastic foils with all‐solution processing have extremely deformable and foldable light‐emitting functionality. This approach is expected to open a new avenue for developing wearable and attachable transparent displays.     

Ultrahigh‐Conductivity Polymer Hydrogels with Arbitrary Structures

A poly(3,4‐ethylenedioxythiophene):poly(4‐styrenesulfonate) (PEDOT:PSS) hydrogel is prepared by thermal treatment of a commercial PEDOT:PSS (PH1000) suspension in 0.1 mol L^?1 sulfuric acid followed by partially removing its PSS component with concentrated sulfuric acid. This hydrogel has a low solid content of 4% (by weight) and an extremely high conductivity of 880 S m^?1. It can be fabricated into different shapes such as films, fibers, and columns with arbitrary sizes for practical applications. A highly conductive and mechanically strong porous fiber is prepared by drying PEDOT:PSS hydrogel fiber to fabricate a current‐collector‐free solid‐state flexible supercapacitor. This fiber supercapacitor delivers a volumetric capacitance as high as 202 F cm^?3 at 0.54 A cm^?3 with an extraordinary high‐rate performance. It also shows excellent electrochemical stability and high flexibility, promising for the application as wearable energy‐storage devices.     

Cover Picture: Lithography‐Free,Self‐Aligned Inkjet Printing with Sub‐Hundred‐Nanometer Resolution (Adv. Mater. 8/2005)

The inherently low resolution of inkjet printing on unpatterned surfaces can be overcome by selective surface modification of a first printed pattern, resulting in hydrophobic repulsion of subsequently deposited aqueous polymer dispersions. This technique, reported by Sirringhaus and co‐workers on p. 997, is capable of achieving sub‐100 nm resolution without any lithographic step. The cover shows an array of polymer transistors patterned with this method on three different length scales, as well as a schematic of the process.     

Junction‐Free Electrospun Ag Fiber Electrodes for Flexible Organic Light‐Emitting Diodes

Fabrication of junction‐free Ag fiber electrodes for flexible organic light‐emitting diodes (OLEDs) is demonstrated. The junction‐free Ag fiber electrodes are fabricated by electrospun polymer fibers used as an etch mask and wet etching of Ag thin film. This process facilitates surface roughness control, which is important in transparent electrodes based on metal wires to prevent electrical instability of the OLEDs. The transmittance and resistance of Ag fiber electrodes can be independently adjusted by controlling spinning time and Ag deposition thickness. The Ag fiber electrode shows a transmittance of 91.8% (at 550 nm) at a sheet resistance of 22.3 Ω □^?1, leading to the highest OLED efficiency. In addition, Ag fiber electrodes exhibit excellent mechanical durability, as shown by measuring the change in resistance under repeatable mechanical bending and various bending radii. The OLEDs with Ag fiber electrodes on a flexible substrate are successfully fabricated, and the OLEDs show an enhancement of EQE (≈19%) compared to commercial indium tin oxide electrodes.     

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n‐ and p‐type oxide based thin‐film transistors (TFT) is reviewed, with special emphasis on solution‐processed and p‐type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n‐type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution‐processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p‐type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n‐ and p‐type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n‐ and p‐type oxide transistors as well as the fabrication of CMOS devices with and on paper.     

Hollow‐Structured Graphene–Silicone‐Composite‐Based Piezoresistive Sensors: Decoupled Property Tuning and Bending Reliability

A versatile flexible piezoresistive sensor should maintain high sensitivity in a wide linear range, and provide a stable and repeatable pressure reading under bending. These properties are often difficult to achieve simultaneously with conventional filler–matrix composite active materials, as tuning of one material component often results in change of multiple sensor properties. Here, a material strategy is developed to realize a 3D graphene–poly(dimethylsiloxane) hollow structure, where the electrical conductivity and mechanical elasticity of the composite can be tuned separately by varying the graphene layer number and the poly(dimethylsiloxane) composition ratio, respectively. As a result, the sensor sensitivity and linear range can be easily improved through a decoupled tuning process, reaching a sensitivity of 15.9 kPa^?1 in a 60 kPa linear region, and the sensor also exhibits fast response (1.2 ms rising time) and high stability. Furthermore, by optimizing the density of the graphene percolation network and thickness of the composite, the stability and repeatability of the sensor output under bending are improved, achieving a measurement error below 6% under bending radius variations from ?25 to +25 mm. Finally, the potential applications of these sensors in wearable medical devices and robotic vision are explored.     

Extremely Vivid,Highly Transparent,and Ultrathin Quantum Dot Light‐Emitting Diodes

Displaying information on transparent screens offers new opportunities in next‐generation electronics, such as augmented reality devices, smart surgical glasses, and smart windows. Outstanding luminance and transparency are essential for such “see‐through” displays to show vivid images over clear background view. Here transparent quantum dot light‐emitting diodes (Tr‐QLEDs) are reported with high brightness (bottom: ≈43 000 cd m^?2, top: ≈30 000 cd m^?2, total: ≈73 000 cd m^?2 at 9 V), excellent transmittance (90% at 550 nm, 84% over visible range), and an ultrathin form factor (≈2.7 µm thickness). These superb characteristics are accomplished by novel electron transport layers (ETLs) and engineered quantum dots (QDs). The ETLs, ZnO nanoparticle assemblies with ultrathin alumina overlayers, dramatically enhance durability of active layers, and balance electron/hole injection into QDs, which prevents nonradiative recombination processes. In addition, the QD structure is further optimized to fully exploit the device architecture. The ultrathin nature of Tr‐QLEDs allows their conformal integration on various shaped objects. Finally, the high resolution patterning of red, green, and blue Tr‐QLEDs (513 pixels in.^?1) shows the potential of the full‐color transparent display.