电化学腐蚀多孔硅表面形貌的结构特性

多孔硅作为微电子机械系统中重要的热绝缘层和牺牲层材料,其表面形貌结构特性是影响多孔硅上薄膜器件性能的重要因素,为此,利用双槽电化学腐蚀方法制备了多孔硅薄膜,并通过原子力显微镜和场发射扫描电子显微镜对制备多孔硅的表面形貌和孔径大小分布进行了观察．结果发现：腐蚀初期,在硅表面会有大量的硅柱形成,硅柱的直径、高度、分布密度与电流密度成正比关系;硅柱在进一步腐蚀过程中会消失,多孔硅的表面粗糙度随着腐蚀的进行,先减小再增大,最后达到稳定值0．52nm;多孔硅孔径大小分布区间随腐蚀时间增加变窄．     

化学刻蚀法制备多孔硅的表面形貌研究

本工作首先采用化学刻蚀法制备出各种特征的多孔硅，然后通过扫描电镜技术，对多孔硅的表面形貌进行了表征，并分析了多孔硅表面微结构的形成过程。     

多孔硅在传感器中的应用研究进展

多孔硅由于其制备方法简单、拥有极大的内表面积、广泛的孔径尺寸、可控的表面改性以及与传统硅集成技术兼容等特点,成为传感器件中理想的敏感材料。简述了多孔硅电化学传感器和光学传感器的研究进展,包括多孔硅湿度传感器、多孔硅气敏传感器、多孔硅有机蒸气传感器、多孔硅生物传感器。最后指出了阻碍多孔硅基传感器商业化的影响因素,并展望了多孔硅传感器的发展方向。     

采用原电池法制备纳米多孔硅

利用原电池法在硅片表面制备了纳米多孔硅层;用扫描电镜SEM和原子力显微镜AFM观察了多孔硅表面形貌：原电池法与电化学法得到的多孔硅孔径均在10～20nm范围．研究结果表明：铂膜电极厚度的增大以及铂膜电极与暴露硅片面积比的增大,会导致多孔硅层的厚度增大．热学模拟结果表明：以纳米多孔硅作为绝热层可获得与悬浮结构相同的效果．     

多孔硅的电化学制备与研究

以电化学方法制备了多孔硅材料并通过表面轮廓测试仪、原子力显微镜、显微拉曼光谱仪等设备对制备多孔硅的孔隙率、厚度、表面形貌、以及热导率进行了表征.结果发现,本实验制备的多孔硅属于介孔硅(15～20nm),其孔隙率随腐蚀时间和腐蚀电流的变化有先增大后减小的趋势.增加多孔硅的厚度和孔隙率,可以使得多孔硅的热导率显著降低(最低可低至0.62W/m·K).     

硝酸银水溶液处理新生多孔硅的研究

n型单晶硅经光电化学阳极刻蚀成多孔硅.研究了多孔硅经硝酸银(AgNO3)水溶液浸泡前后样品的光致发光(PL)性质,实验发现,浸泡很短时间内多孔硅发光强度增强,浸泡时间较长的样品发光强度会衰减直至猝灭,且浸泡液浓度越大荧光衰减越明显.通过扫描电子显微镜(SEM),傅立叶红外光谱(FTIR)和X射线光电子能谱(XPS)的检测显示,AgNO3水溶液浸泡的多孔硅样品表面有金属银析出.光致发光增强是多孔硅表面形成Si-O结构所致,荧光猝灭是因为银在多孔硅表面形成大量非辐射复合中心.     

多孔硅与聚甲基丙烯酸甲酯复合光致发光特性研究

多孔硅与有机材料复合可以改善多孔硅的光致发光特性。用化学腐蚀的方法制备了多孔硅，通过不同方法实现了多孔硅与聚甲基丙烯酸甲酯(PMMA)的复合。实验结果表明，用旋涂法实现的PMMA固化后再与多孔硅复合而制得的样品的结果最好，它与原始的多孔硅样品相比，发光峰发生了蓝移而且发光强度下降很小。PMMA层有限的厚度和PMMA对多孔硅表面的保护使复合后发光强度下降很小。制备的多孔／PMMA复合体系的发光强度几乎不随时间而下降，这可能是由于PMMA有效地隔绝多孔硅与空气的接触，保护了多孔硅的表面，不会产生更多的悬挂键。     

多孔硅/高氯酸钠纳米复合含能材料的冲量研究

为了研究多孔硅(PS)类含能材料的输出性能,对填充高氯酸钠的多孔硅复合含能薄膜的表面形貌和能量特性进行了表征和分析,采用扭摆推力测试平台对多孔硅/高氯酸钠复合物在不同点火电压下的反应冲量进行了测试。研究结果表明,制备的多孔硅薄膜表面平整、无龟裂,表面粗糙度仅为2.7 nm,厚度达到25μm。填充的高氯酸钠带有结晶水,可以稳定存在于多孔硅孔隙中。多孔硅/高氯酸钠复合物在大约494.7℃时开始反应,反应放热量达到689.5 J/g。冲量测试结果表明多孔硅/高氯酸钠复合含能材料反应的冲量在微牛顿秒级,冲量值随着点火电压的增大而增大。     

多孔硅基热敏薄膜的制备与性能

对MEMS用具有绝热性能的多孔硅基底上沉积的热敏感薄膜进行了研究．首先用电化学方法制备多孔硅,分别在多孔硅基底和硅基底上通过溅射镀膜方法沉积氧化钒、Cu、Au热敏薄膜,测试多孔硅基底和硅基底上的氧化钒及金属薄膜电阻的热敏特性．结果表明,在多孔硅基底表面沉积的热敏薄膜具有与硅基表面热敏薄膜同样的热敏特性且表现出更高的灵敏度;此外,对沉积在不同制备条件得到的多孔硅上的氧化钒薄膜电阻热敏特性进行比较,发现随着孔隙率和厚度的增加,多孔硅的绝热性能提高,其上沉积的氧化钒薄膜电阻热敏特性增强．     

多孔硅对单晶硅少子寿命影响状况的研究

以p型单晶硅片为研究对象,在单晶硅片表面采用化学腐蚀方法制备多孔硅层,通过实验选取制备多孔硅的最佳工艺条件,采用SEM观察多孔硅表面形貌,以及用微波光电导法测试少子寿命的变化情况。结果表明,在相同的腐蚀溶液配比条件下腐蚀11min得到的多孔硅层的表面形貌最好,孔隙率最大。在850℃下热处理150min时样品少子寿命的提高达到最大,不同腐蚀时间的样品少子寿命提高程度不同,腐蚀11min的样品少子寿命提高最大,约有10%左右。多孔层的形成伴随着弹性机械应力的出现,引起多孔层-硅基底界面处产生弹性变形,这有利于缺陷和金属杂质在界面处富集。另外,多孔硅仍具有晶体结构,但其表面方向上的晶格参数要比初始硅的晶格参数大,也有利于金属杂质向多孔层迁移。     

超高分子量聚乙烯的滑动磨损性能与机理研究

用ＭＭ２００型磨损试验机测试了超高分子量聚乙烯（ｕｌｔｒａｈｉｇｈｍｏｌｅｃｕｌａｒｗｅｉｇｈｔｐｏｌｙｅｔｈｙｌｅｎｅ）的滑动磨损性能,考察了滑动速度与载荷对其磨损的影响,通过扫描电子显微镜对ＵＨＭＷＰＥ磨损表面形貌的观察,指出：在跑合期阶段,ＵＨＭＷＰＥ表面形成了一系列的脊;在严重磨损阶段,表面层发生了大范围的撕裂与断裂。热效应对其磨损的影响由ＰＥＤＳＣ７检测     

溶胶—凝胶法制备莫来石膜的研究

以正硅酸乙酯（ＴＥＯＳ）和硝酸铝为原料,用溶胶—凝胶法制备莫来石膜。讨论了溶胶制备过程中ＨＣｌ、ＨＮＯ３和ＨＡｃ等催化剂的作用,溶胶的形成机理,以及莫来石膜的结构     

Patterned porous silicon formed with photolithography

Porous silicon is a fascinating light-emitting material among silicon-related materials. We have challenged to form a patterned porous silicon layer for the purpose of the micro optical devices with the help of photolithography. Photoresist has been used as a mask that prevented the formation of porous silicon. We achieved square patterned porous silicon with a precision of 30 m. We also found a problem that the formation of porous silicon also proceeded under the mask partly.     

Porous silicon-based direct hydrogen sulphide fuel cells

In this paper, the use of Au/porous silicon/Silicon Schottky type structure, as a direct hydrogen sulphide fuel cell is demonstrated. The porous silicon filled with hydrochlorid acid was developed as a proton conduction membrane. The Au/Porous Silicon/Silicon cells were fabricated by first creating the porous silicon layer in single-crystalline Si using the anodic etching under illumination and then deposition Au catalyst layer onto the porous silicon. Using 80 mM H2S solution as fuel the open circuit voltage of 0.4 V was obtained and maximum power density of 30 W/m2 at room temperature was achieved. These results demonstrate that the Au/Porous Silicon/Silicon direct hydrogen sulphide fuel cell which uses H2S:dH2O solution as fuel and operates at room temperature can be considered as the most promising type of low cost fuel cell for small power-supply units.     

奥贝球铁的冲击断口分析

利用扫描电镜对经不同等淬工艺处理的奥贝球铁的冲击断口形貌进行了观察与分析,揭示了冲击断口形貌与冲击韧性、金相组织的内在联系,探讨了不同等淬工艺下奥贝球铁的断裂机理     

Effect of structure of interfacial coating layer on mechanical properties of continuous fiber reinforced reaction sintered silicon carbide matrix composite

A dense silicon carbide matrix composite reinforced by Hi-Nicalon fibers CVD coated with boron nitride and silicon carbide was fabricated by slurry impregnation and subsequent reaction sintering with molten silicon. The effect of the structure and the thickness of the silicon carbide layer of the fiber coating on the mechanical properties of the composite were investigated. That is, three types of silicon carbide layers, namely a dense structure with a thickness of 0.15 m and two porous structures with a thickness of 0.15 m and 0.48 m, respectively, were investigated. As a result, excellent strength property of ceramic matrix composite (CMC) was obtained in the case of the dense silicon carbide (SiC) layer. The thickness effect of the SiC layer on the strength was smaller than that of the structure.     

Piezoresistive pressure sensing by porous silicon membrane

In this paper, the piezoresistive pressure-sensing property of porous silicon has been reported. The pressure sensitivity of a porous silicon membrane of 63% porosity and 20-/spl mu/m thickness has been observed to be about three times more than that of a conventional bulk silicon membrane of the same dimensions. The increased sensitivity is attributed to the improvement in piezoresistance due to quantum confinement in the porous silicon nanostructure. The piezoresistive coefficient of porous silicon is estimated for the first time and is observed to be about 50% larger than that of monocrystalline silicon for a 63% porosity porous silicon membrane. The response time has also been studied and observed to be significantly shorter. Power dissipation of the porous silicon pressure sensor is also much less compared to that of commercial bulk silicon piezoresistive pressure sensors.     

稀磁半导体CdMnTe单晶的制备新技术

ＣｄＭｎＴｅ是近年来出现的一种新型半导体材料，由于材料中含有磁性Ｍｎ２＋离子，所以又称之为稀释磁性半导体。它具有独特的磁学、光学、电学性质，同时也可用作红外探测器制备中的衬底材料，但是，受材料本身特性的限制，采用传统的长晶工艺制备这种材料存在有较大的困难。本文采用ＡＣＲＴ—Ｂ技术来进行晶体生长，使混料和长晶一次完成，成功的制备出了国内首批ＣｄＭｎＴｅ单晶     

Photocatalytic Properties of Porous Silicon Nanowires

Porous silicon nanowires are synthesized through metal assisted wet-chemical etch of highly-doped silicon wafer. The resulted porous silicon nanowires exhibit a large surface area of 337 m(2)·g(-1) and a wide spectrum absorption across the entire ultraviolet, visible and near infrared regime. We further demonstrate that platinum nanoparticles can be loaded onto the surface of the porous silicon nanowires with controlled density. These combined advancements make the porous silicon nanowires an interesting material for photocatalytic applications. We show that the porous silicon nanowires and platinum nanoparticle loaded porous silicon nanowires can be used as effective photocatalysts for photocatalytic degradation of organic dyes and toxic pollutants under visible irradiation, and thus are of significant interest for organic waste treatment and environmental remediation.     

Chemical reactions and applications of the reductive surface of porous silicon

The chemical reactivity of freshly prepared porous silicon is similar to that of a reducing agent on the surface of the nanocrystallites. Ag+ spontaneously reduces to form Ag0 granular coatings on the surface of porous silicon at the expense of the oxidation of silicon hydride and silicon. Atomic Force Microscopy shows that the thickness and topography of the Ag0 coating depend on the concentration of Ag+ with the porous silicon surface being the limiting reagent. In-situ Raman Spectroscopy shows an Ag layer on the silicon and Si:O layer immediately after etching and exposure to Ag+ and O2 respectively. Ag0 coated on the surface and in the pores of the porous silicon proves to be an excellent material for Surface Enhanced Raman Spectroscopy and the natural low electron affinity on the surface of porous silicon replaces the need for a negative bias to prepare very stable diamond coatings on the surface of silicon.