不同结构镍纳米线阵列的制备及其磁性

采用直流电沉积在多孔有序氧化铝模板中制备了不同结构的有序镍纳米线阵列。采用SEM和TEM对所制备的镍纳米线的形貌和结构进行了表征。研究了镍纳米线不同结构对镍纳米线阵列磁性性能的影响规律．当电沉积电压为2．5V时制备的镍纳米线为多晶结构；电沉积电压4V时，镍纳米线为沿[220]择优取向的单晶结构；电沉积电压＞5V时，择优取向由[220]转为[111]方向．磁滞回线结果表明，单晶镍纳米线阵列与多晶纳米线阵列相比具有更高的矩形度，沿[111]择优取向的单晶纳米线相比沿[220]取向的单晶镍纳米线具有更大的矩形度，表现出显著的磁各向异性。     

Mechanical properties of microwave hydrothermally synthesized titanate nanowires

In this investigation titanate nanowires were synthesized by a microwave hydrothermal process and their nanomechanical characterization was carried out by a compression experiment via buckling instability using a nanomanipulator inside a scanning electron microscope. Nanowires of diameters 120-150?nm and length tens of microns can be synthesized by keeping a commercial nanoparticle inside a microwave oven at 350?W and 210?°C for 5?h. The nanowire was clamped between two cantilevered AFM tips attached to two opposing stages of the manipulator for nanomechanical characterization. The elasticity coefficients of the titanate nanowires were measured by applying a continuously increasing load and observing the buckling instability of the nanowires. The buckling behavior of a nanowire was analyzed from the series of SEM images of displacement of the cantilever attached to the nanowire due to application of load. The critical loads for different sized titanate nanowires were determined and their corresponding Young's modulus was computed with the Euler pinned-fixed end model. The Young's modulus of these microwave hydrothermal process synthesized titanate nanowires were determined to be approximately in the range 14-17?GPa. This investigation confirms the capability of the nanomanipulator via the buckling technique as a constructive device for measuring the mechanical properties of nanoscale materials.     

Fabrication of GaN nanowires and nanorods catalyzed with tantalum

Single-crystalline GaN nanowires and nanorods have been fabricated through ammoniating Ga₂O₃ films catalyzed with tantalum (Ta) by RF magnetron sputtering, and microstructure, morphology and optical properties were investigated in particular. The results indicate that the nanowires have a hexagonal wurtzite structure with size about 50 nm in diameter and more than ten microns in length, however, the nanorods are rod-like structures with smooth surface and 100–300 nm in diameter. The growth direction of these nanostructures are perpendicular to the (100) crystal plane. The photoluminescence spectrum at room temperature exhibits a strong UV light emission band centered at 364 nm.     

Conversion of potassium titanate nanowires into titanium oxynitride nanotubes

Tunnel-structured potassium titanate with a K(3)Ti(8)O(17) phase was synthesized by direct oxidation of titanium powder mixed with KF(aq) in water vapor at 923 K. The reaction conditions were adjusted so that uniform single crystalline potassium titanate nanowires with [010] growth direction (length: 5-30 μm, diameter: 80-100 nm) were obtained. Nitridation of the nanowires by NH(3)(g) at 973-1073 K converted the titanate nanowires into rock-salt structured cubic phase single crystalline titanium oxynitride TiN(x)O(y) nanotubes (x = 0.88, y = 0.12, length = 1-10 μm, diameter = 150-250 nm, wall thickness = 30 - 50 nm) and nanorods (x = 0.5, y = 0.5, length = 1-5 μm, diameter = 100-200 nm) with rough surfaces and [200] growth direction. The overall conversion of the titanate nanowires into the nanotubes and the nanorods can be rationalized by Ostwald ripening mechanism. We fabricated an electrode by adhering TiN(x)O(y) nanotubes (0.2 mg) on a screen-printed carbon electrode (geometric area: 0.2 cm(2)). Electrochemical impedance spectroscopy demonstrated its charge transfer resistance to be 20Ω. The electrochemical surface area of the nanotubes on the electrode was characterized by cyclic voltammetry to be 0.32 cm(2). This property suggests that the TiN(x)O(y) nanostructures can be employed as potential electrode materials for electrochemical applications.     

Molten salt route of single crystal barium titanate nanowires

Rather long barium titanate nanowires have been synthesised by molten salt method without any organic surfactants. The crystal structure of barium titanate nanowires is identified by X-ray diffraction to be the tetragonal structure phase, Raman spectroscopy and selected area electron diffraction measurements. Furthermore, scanning electron microscopy and transmission electron microscopy observations show that the barium titanate nanowires have uniform cylindrical structure, with lengths from 20 to 80 μm and diameters from 100 nm to 1 μm. Moreover, high resolution transmission electron microscopy observations and selected area electron diffraction analysis show that the barium titanate nanowires are single crystals with a tetragonal structure in nature.     

Preparation and characterization of sodium titanate nanowires from brookite nanocrystallites

Sodium titanate nanowires from brookite (or anatase) nanocrystallites were synthesized by a hydrothermal treating in 10 M NaOH aqueous solution at 180 °C. Their structures were characterized by XRD, TEM, HRTEM, XPS, and Raman spectra. The results indicated that though the structures of sodium titanate nanowires derived from brookite and antase were similar, there existed differences between them. The decrease of (2 0 0) plane spacing resulted from the increase of Na amount intercalated into TiO₂. The species of short TiO bonds in sodium titanate from brookite was more than that in sodium titanate from anatase. UV–vis absorption spectra showed a strong absorption not only in the ultraviolet range but also in the visible-light range.     

Fabrication and characteristics of three-dimensional flower-like titanate nanostructures

A novel and facile approach has been developed to fabricate three-dimension (3D) flower-like titanate nanostructures from Ti powders. The synthesized flower-like titanate nanostructures were composed of many thin nanoribbons and have an ultrahigh specific surface area of 572.3 m2/g. After high temperature heat treatment, the flower-like titanate nanostructures were totally transformed into corresponding anatase TiO2 nanostructures without destroying their 3D hierarchical structural motif. The flower-like TiO2 nanostructures exhibited high photocatalytic activity for photodecomposition of methyl blue, and they could possibly be further used in photovoltaic cell, sensors, Li-ion batteries, and so on.     

Fabrication of large-scale ultra-fine Cd-doped ZnO nanowires

We demonstrate bulk synthesis of highly crystal Cd-doped ZnO nanowires by using (Cd + Zn) powders at 600 °C. These mass ultra-fine ZnO nanowires with about 0%, 1%, 4% and 8% Cd so obtained have been characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), selected area electron diffraction (SAED) and high-resolution TEM (HRTEM). They have the uniform diameter of about 20 nm and several hundred microns in length. The growth of the as-synthesized nanowires is suggested for self-catalyzed vapor–liquid–solid.     

Fabrication of micrometer-scale spherical titanate nanotube assemblies with high specific surface area

Three-dimensional (3D) micrometer-scale spherical titanate nanotube assemblies have been successfully synthesized via hydrothermal synthesis from Ti powders. The obtained titanate nanotube assemblies have a diameter of around 4-7 µm. The titanate nanotubes have an outer diameter of around 9-10 nm, an inner diameter around 3-4 nm and a length of several micrometers. A proposed two-stage growth mechanism was applied to explain the formation process of these titanate nanotube assemblies. We have also demonstrated that these titanate assemblies have higher specific surface area and larger adsorption capacity than that of titanate nanotubes. And they could possibly be further used in photocatalysts, separation technologies, energy-storage technologies and so on.     

Fabrication of periodic metal nanowires with microscale mold by nanoimprint lithography

In this paper, a simple method is demonstrated for fabricating periodic metal nanowires based on the unconventional nanoimprint lithography (NIL) technique. Using this method, sub-100 nm metal nanowires with the rectangular cross-section are fabricated with microscale stamp. Furthermore, the metal nanowires with different widths and heights can be generated by adjusting the imprinting parameters with the same stamp. The metal nanowires prepared with this method can be used for chemical sensing, such as ammonia sensing, and it may have applications in optical signal processing.     

Fabrication of microdevices with integrated nanowires for investigating low-dimensional phonon transport

Phonons in low-dimensional structures with feature sizes on the order of the phonon wavelength may be coherently scattered by the boundary. This may give rise to a new regime of heat conduction, which can impact thermal energy transport and conversion. Traditional methods used to investigate phonon transport in one-dimensional structures suffer from uncertainty due to contact resistance, defects, and limited control over sample dimensions. We have developed a new batch-fabrication technique for suspended microdevices with integrated silicon nanowires from silicon-on-insulator (SOI) wafers. The nanowires are defect-free and have extremely high aspect ratios (length/critical dimension >2000). The nanowire dimensions (length and critical dimension) can be precisely controlled during fabrication. With these novel devices, phonon transport in silicon nanowires is systematically investigated. The room temperature thermal conductivity of nanowires with critical width around 80 nm is about 20 W/(m K) and much lower than that in smooth VLS wires. This suggests that the surface morphology of the structures has a significant effect on the thermal conductivity, but this phenomenon is not currently understood. This fabrication technique can also be used for thermal transport investigation in a wide-range of low-dimensional structures.     

Fabrication and photoconductivity of macroscopically long coaxial structured Ag/Ag2S nanowires with different core-to-shell thickness ratios

Macroscopically long core/shell structured Ag/Ag(2)S coaxial nanowires and Ag(2)S nanowires have been fabricated using the solid-state ionics method for Ag nanowires, combined with a subsequent gas-solid reaction, and characterized at different spatial scales. The photoconductive properties of such samples are investigated by performing transport measurements with 532 nm laser illumination ON/OFF cycles under different bias. A significant change in the photoconductivity from negative to positive has been observed in the coaxial structured Ag/Ag(2)S nanowires when the Ag(2)S layer thickness increases to a certain level. Such behaviors are ascribed to two photoconductive mechanisms in the Ag core and the Ag(2)S shell, respectively. These results indicate a promising approach to fabricate nanoscale photoswitches with different dark resistances and photoinduced currents based on the Ag/Ag(2)S coaxial nanowires for various optoelectronic applications.     

Fabrication of p-type ZnO nanowires based heterojunction diode

Vertically aligned p-type ZnO (Li–N co-doped) nanowires have been synthesized by hydrothermal method on n-type Si substrate. X-ray diffraction pattern indicated a strong peak from (0 0 0 2) planes of ZnO. The appearance of a strong peak at 437 cm⁻¹ in Raman spectra was attributed to E₂ mode of ZnO. Fourier transformed infrared studies indicated the presence of a distinct characteristic absorption peaks at 490 cm⁻¹ for ZnO stretching mode. Compositional studies revealed the formation of Li–N co-doped ZnO, where Li was bonded with both O and N. The junction properties of p-type ZnO nanowires/n-Si heterojunction diodes were evaluated by measuring I–V and C–V characteristics. I–V characteristics exhibited the rectifying behavior of a typical p–n junction diode.     

Fabrication and optical properties of Sb-doped CdS nanowires

Sb-doped CdS nanowires with an average diameter of 30 nm and lengths of up to 20-30 μm are fabricated by chemical vapor approach. The as-synthesized products have a single-crystal phase and grow along the <011> direction. The growth of Sb-doped CdS nanowires is suggested for Quasi-vapor-solid mechanism (QVSM). In particular, the PL spectra show enhancing emission peaks that strongly shift to long wavelength (up to 55 nm redshift) with a doping Sb where Sb-doped CdS nanowires are found to be responsible for the different characteristics. The PL mechanism is explained in detail.     

Fabrication of conjugated polymer nanowires by edge lithography

This paper describes the fabrication of conjugated polymer nanowires by a three stage process: (i) spin-coating a composite film comprising alternating layers of a conjugated polymer and a sacrificial material, (ii) embedding the film in an epoxy matrix and sectioning it with an ultramicrotome (nanoskiving), and (iii) etching the sacrificial material to reveal nanowires of the conjugated polymer. A free-standing, 100-layer film of two conjugated polymers was spin-coated from orthogonal solvents: poly(2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV) from chloroform and poly(benzimidazobenzophenanthroline ladder) (BBL) from methanesulfonic acid. After sectioning the multilayer film, dissolution of the BBL with methanesulfonic acid yielded uniaxially aligned MEH-PPV nanowires with rectangular cross sections, and etching MEH-PPV with an oxygen plasma yielded BBL nanowires. The conductivity of MEH-PPV nanowires changed rapidly and reversibly by >10 (3) upon exposure to I 2 vapor. The result suggests that this technique could be used to fabricate high-surface-area structures of conducting organic nanowires for possible applications in sensing and in other fields where a high surface area in a small volume is desirable.     

Fabrication of field-effect transistors from hexathiapentacene single-crystal nanowires

This paper describes a simple, solution-phase route to the synthesis of bulk quantities of hexathiapentacene (HTP) single-crystal nanowires. These nanowires have also been successfully incorporated as the semiconducting material in field-effect transistors (FETs). For devices based on single nanowires, the carrier mobilities and current on/off ratios could be as high as 0.27 cm2/Vs and >103, respectively. For transistors fabricated from a network of nanowires, the mobilities and current on/off ratios could reach 0.057 cm2/Vs and >104, respectively. We have further demonstrated the use of nanowire networks in fabricating transistors on mechanically flexible substrates. Preliminary results show that these devices could withstand mechanical strain and still remain functional. The results from this study demonstrate the potential of utilizing solution-dispersible, nanostructured organic materials for use in low-cost, flexible electronic applications.     

Fabrication of bismuth oxide-tin oxide nanowires by direct thermal oxidation of Bi-Sn eutectic nanowires

Bismuth oxide-tin oxide (BiO_x-SnO_x) heterostructure nanowires with a diameter of 70 nm were fabricated by directly annealing Bi-Sn eutectic nanowires synthesized by the vacuum hydraulic pressure injection process. After removal of AAO (Anodic Aluminum Oxide) template with an etching solution, a spontaneous oxide was formed on nanowires to enclose the Bi-Sn eutectic alloys. While these nanowires went through the annealing process with the proper heating rate of 50 °C/min, the well-annealed oxide nanowires remain solid, straight and segmental. The results of cathodoluminescence (CL) spectrum and photoresponse proved that the products consisted of bismuth oxide and tin oxide. This fabrication methodology provides a simple way to produce one-dimensional oxide nanomaterials.     

Sn催化的Ga掺杂ZnO纳米线的制备及其光致发光性能研究

采用化学气相沉积的方法,以Sn粉为催化剂制备出大长径比的Ga掺杂ZnO纳米线。采用扫描电子显微镜观察制备的产物,发现样品为直径约25～90nm的纳米线。通过比较不同Ga掺杂含量样品的室温光致发光谱,发现一定掺杂含量的Ga可以提高ZnO纳米线的紫外发光强度,同时,Ga的掺杂也会引起ZnO紫外发光峰的蓝移。随着Ga含量的增加,蓝移程度越来越小,甚至发生红移。Sn的引入只对Ga掺杂ZnO纳米线的蓝绿光有贡献。