Microwave-assisted method for preparation of Zn1−xMgxO nanostructures and their activities for photodegradation of methylene blue

Nanostructures of Zn_1−xMg_xO (0 ⩽ x ⩽ 0.2) were prepared in water by one-pot method under microwave irradiation for 5 min. In this method, zinc acetate, magnesium nitrate and sodium hydroxide were used as starting materials without using any additive and post preparation treatment. The nanostructures were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray (EDX), X-ray photoelectron spectroscopy (XPS), diffuse reflectance spectroscopy (DRS), electrochemical impedance spectroscopy (EIS), Fourier transform-infrared (FT-IR), and the Brunauer–Emmett–Teller (BET) techniques. The nanostructures have wurtzite hexagonal crystalline phase and doping of Mg²⁺ ions does not change the phase of ZnO. The SEM and TEM images show that morphology of the samples is changing by doping of Mg²⁺ ions. The EIS data show that by doping the ion, interfacial charge transfer resistance of the nanostructures decreases. Photocatalytic activity of the nanostructures was evaluated by degradation of methylene blue (MB) under UV irradiation. The degradation rate constant on the nanostructures with 0.15 mol fraction of Mg²⁺ ions is about 2-fold greater than for ZnO. Moreover, influence of various operational parameters such as microwave irradiation time, calcination temperature, weight of catalyst, concentration of MB, pH of solution and scavengers of reactive species on the degradation rate constant was investigated and the results were discussed.     

Synthesis and luminescence properties of ternary complexes of Sm x Tb1−x (TTA)3Phen nanoparticles and their surface modification

A series of Sm _x Tb_1?x (TTA)₃Phen (x = 1.0, 0.9, 0.7, 0.5, 0.3, 0.1, 0) complexes was synthesized by wet chemical method and characterized using Fourier transform infrared spectroscopy and fluorescence spectroscopy. The IR absorption spectra indicate that α-thenoyltrifluoroacetone was coordinated to the rare earth ions and that chemical bonds were formed between rare earth ions and the nitrogen atoms in 1,10-Phenanthroline (Phen). The fluorescence spectra of the complexes indicate that the emission intensity of Sm³⁺ was enhanced by the addition of substitutive Tb³⁺. These data show that not only the ligands (TTA and Phen) but also Tb³⁺ could absorb and transmit energy to Sm³⁺ in the complexes. Formation of dual-core complexes appears to be responsible for co-fluorescence, which can greatly promote the illuminant ability of Sm (TTA)₃Phen complex. After further encapsulation by SiO₂, the Sm _x Tb_1?x (TTA)₃Phen@SiO₂ core–shell structure was very stable to UV light.     

An ionic liquid route to prepare mesoporous ZrO2–TiO2 nanocomposites and study on their photocatalytic activities

Mesostructured ZrO₂–TiO₂ nanoparticles with different ZrO₂ contents have been synthesized by an ionic liquid-assisted hydrothermal route. The prepared materials were characterized by means of X-ray diffraction (XRD), nitrogen adsorption–desorption, transmission electron microscope (TEM), X-ray photoelectron spectroscopy (XPS), UV–vis diffuse reflectance spectra analysis (DRS) and NH₃-TPD technique. The obtained ZrO₂–TiO₂ materials exhibit large specific surface area and uniform pore sizes. Introduction of ZrO₂ species can effectively suppress phase transformation from anatase to rutile and promote thermal stability of ZrO₂–TiO₂ materials. The photocatalytic activity of the ZrO₂–TiO₂ sample is higher than that of the TiO₂ sample and commercially available Degussa P25. The high photocatalytic activity can be attributed to stronger adsorption in the ultraviolet region, higher specific area, smaller crystal size and increased surface OH groups.     

Ethylenediamine-assisted solvothermal synthesis of one-dimensional CdxZn(1−x)S solid solutions and their photocatalytic activity for nitrobenzene reduction

A series of one-dimensional Cd_xZn_(1−x)S semiconductor alloys were prepared via a hydrothermal method with the assistance of ethylenediamine at 180 °C for 12 h. The products were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, nitrogen adsorption/desorption and Fourier transform infrared techniques. With the value of x increased, the band gap of Cd_xZn_(1−x)S semiconductor alloys gradually decreased indicating that catalysts were exchanged to visible-light response. Photocatalytic reduction results showed that Cd_0.73Zn_0.27S exhibited the highest photocatalytic activity toward photo production of aniline via nitrobenzene reduction under visible irradiation respectively. The reaction mechanism was also discussed.     

Magnetic characterization of Zr(Cr1−x Cu x )2 alloys and their hydrides

Magnetization measurements were carried out on the alloys Zr(Cr_1–x Cu _x )₂ (x=0, 0.1, 0.3, 0.5) before and after hydrogenation. All the binary and the ternary alloys, as well as their hydrides, exhibit a temperature-independent or nearly temperature-independent Pauli type of paramagnetism. Beside the Pauli paramagnetism, a ferromagnetic contribution to the total magnetization was observed for most of the alloys and their hydrides. It was also observed that hydrogen absorption enhances the Pauli paramagnetism as well as the ferromagnetism of the alloys. The rather unusual magnetic behaviour of these systems is briefly discussed in terms of 3d band filling of the transition metal, and is compared with some related systems.     

Growth of perfect-crystal Si-Si1−x Gex-(Ge2)1−x (InP)x structures from the liquid phase

Structures comprising Si-Si_1−x Ge_x-(Ge₂)_1−x (InP)_x with an intermediate Si_1−x Ge_x buffer layer were grown on silicon substrates. Morphological examinations, scanning patterns and diffraction spectra, and also the electrophysical and luminescence properties of the heterostructures were used to show that the crystal perfection of these structures depends on the choice of liquid-phase epitaxy conditions. Pis’ma Zh. Tekh. Fiz. 25, 37–40 (December 26, 1999)     

Synthesis of monodisperse Ce x Zr1−x O2 nanocrystals and the size-dependent enhancement of their properties

Monodisperse Ce_1−x Zr _x O₂ nanocrystals have been synthesized using a simple two-phase approach; adjusting the ratio of precursors used, amount of capping agent used, reaction time and temperature affords precise control over their composition, structure and size. Size-dependent enhancement of oxygen-storage capacity and kinetics of oxygen storage and release were observed. Systematic studies were conducted in order to understand the size-dependent enhancement of these properties. This work provides important insights into the synthesis and fundamental understanding of multi-component nanocrystals with a large variety of applications.     

Construction of TiO₂ hierarchical nanostructures from nanocrystals and their photocatalytic properties

Anatase TiO(2) mesoporous structures with high specific surface areas are of special significance in various applications. In this work, hierarchical anatase TiO(2) materials with flowerlike morphologies have been prepared via a one-step template-free hydrothermal method, by using titanocene dichloride as precursor and EDA as chelating agent in aqueous solution. Particularly, the hierarchical structures are assembled from very thin TiO(2) nanosheets, which are composed of numerous highly crystallized anatase nanocrystals. In addition, the assembled materials own relatively large specific surface areas of 170 m(2)/g, and uniform mesopores of 7 nm. We further demonstrate that the hierarchical TiO(2) materials show very good photocatalytic performance when applied in photodegradation of methylene blue, which should be related to the unique features of hierarchical structures, large specific surface areas and high crystallization degree of the obtained TiO(2) materials. With these features, the hierarchical TiO(2) may find more potential applications in the fields such as dye-sensitized solar cells and lithium ion batteries.     

Synthesis and properties of dielectric (HfO2)1 − x (Sc2O3) x films

(HfO₂)_{1 ? x} (Sc₂O₃) _x films have been grown by chemical vapor deposition (CVD) using the volatile complexes hafnium 2,2,6,6-tetramethyl-3,5-heptanedionate (Hf(thd)₄) and scandium 2,2,6,6-tetramethyl-3,5-heptanedionate (Sc(thd)₃) as precursors. The composition and crystal structure of the films containing 1 to 36 at % Sc have been determined. The results demonstrate that, in the composition range 9 to 14 at % scandium, the films are nanocrystalline and consist of an orthorhombic three-component phase, which has not been reported previously. Using Al/(HfO₂)_{1 ? x} (Sc₂O₃) _x /Si test structures, we have determined the dielectric permittivity of the films and the leakage current through the insulator as functions of scandium concentration. The permittivity of the films with the orthorhombic structure reaches k = 42–44, with a leakage current density no higher than ～10^?8 A/cm².     

Synthesis,phase confirmation and electrical properties of (1 − x)KNNS−xBNZSH lead-free ceramics

Journal of Materials Science: Materials in Electronics - In the present work, lead-free piezoelectric ceramics (Rx)(K0.5Na0.5)(Nb0.96Sb0.04O3)?x(Bi0.5Na0.5)(Zr0.8Sn0.1Hf0.1)O3 [abb. as...     

Synthesis of Au@CdS core–shell nanoparticles and their photocatalytic capacity researched by SERS

High-quality Au@CdS core–shell nanoparticles (CSNs) have been synthesized to improve photo-conversion efficiency in photocatalysis. They demonstrate higher photocatalytic activity in the experiment of photocatalytic degradation of rhodamine 6G (R6G) solution than that of CdS counterparts. Au@CdS CSNs can broaden the absorption range in visible region compared to CdS counterparts. The heterojunction interface between Au and CdS facilitates the separation of photo-generated electron–hole pairs, and transfers electrons from CdS region to Au core. The two advantages are crucial to improve the photocatalytic activity of Au@CdS CSNs. Charge transfer mechanism between metal and semiconductor is efficient that can be used to guide the design of photocatalysts, photovoltaics, and other optoelectronic devices to effectively utilize the solar power. In this paper, we research the photocatalytic process by surface-enhanced Raman scattering (SERS). The combination of photocatalysis and SERS not only can show the change in concentration of R6G solution, but also can provide the information of the change of R6G molecular structure in photocatalytic process.     

Fabrication of perovskite-type Ba(Sn1−x Ta x )O3 ceramics and their power factors

Perovskite-type Ba(Sn_1?x Ta _x )O₃ (0.01 ≤ x ≤ 0.06) ceramics with high relative densities (92.7–94.4 %) were fabricated using the hot isostatic pressing (HIP) method at 1273 K and 196 MPa for 4 h in an atmosphere of argon gas. The lattice parameter decreased slightly with increasing x. From the XPS measurement, the Ta⁵⁺ ion was stable in Ba(Sn_1?x Ta _x )O₃ ceramics and the broad peak of the Ta4f level was the overlap between the Ta⁵⁺4f_5/2 and Ta⁵⁺4f_7/2 levels. Ba(Sn_1?x Ta _x )O₃ ceramics were n-type semiconductors, and their electrical resistivities increased with increasing x. The increase in the electrical resistivity was explained by impurity scattering due to the presence of the Ta ions. The absolute value of the Seebeck coefficient (S) increased with increasing temperature and x. The power factor (S ² σ), which was calculated from electrical conductivity (σ) and the Seebeck coefficient, was ca. 1.0 × 10^?5 W m^?1 K^?2 at x = 0.01.     

Optical properties of amorphous (GeS)1 − x Bi x (0 ≤ x ≤ 0.15) films and a tentative cluster model for their structure

This paper examines the effect of Bi doping on the optical properties of amorphous (GeS)_{1 ? x} Bi _x (0 ≤ x ≤ 0.15) films. Experimental data in conjunction with first-principles electronic structure calculations for Ge _n S _m and Bi _n S _m clusters are used to derive a cluster model for the structure of the amorphous (GeS)_{1 ? x} Bi _x films.     

Synthesis and IR-excited luminescence of (Y1 − x Tm x )2O2S solid solutions

We have studied the key features of the luminescence spectra and kinetics of (Y_{1 ? x} Tm _x )₂O₂S solid solutions in the range 400–2000 nm under laser excitation at 790 and 810 nm. The results have been used to develop a series of IR phosphors “invisible” under laser excitation in the range 790–810 nm and possessing tunable and reproducible relative intensities of three groups of IR luminescence bands in the ranges 770–840, 1360–1520, and 1650–1980 nm, respectively.     

Synthesis and characterization of (Sr1−x′K2x)Zr4(PO4)6 ceramics

Single phase (Sr_1–x K_2x )Zr₄(PO₄)₆, where x lies between 0.0 and 1.0, ceramic powder with a submicron scale particle size has been synthesized successfully at calcination temperatures as low as 650–750°C by a sol-gel technique. The formation of the powder strongly depends on calcination temperature, but is independent of solution pH in the studied range. Dilatometric measurement shows an ultra-low linear coefficient of thermal expansion of 0.1×10^–6°C^–1 when x=0.5 at temperature intervals of 25–1000°C. Thermal conductivity and flexural strength of the materials were determined at ambient temperature to be 1.0 Wm^–1K^–1 and as high as 280 MPa, respectively, indicating that this material can be an excellent candidate in many applications, especially those subjected directly to severe environments.     

Synthesis and properties of TlIn1 − x Gd x Se2 solid solutions

This paper describes the synthesis and crystal growth of TlIn_{1 − x} Gd _x Se₂ solid solutions and presents the T-x phase diagram of the TlInSe₂-TlGdSe₂ system. Partial gadolinium substitution for indium in TlInSe₂ increases the microhardness and unit-cell parameters of the material and reduces its band gap. According to X-ray diffraction data for TlInSe₂-TlGdSe₂ crystals, the TlIn_{1 − x} Gd _x Se₂ (0 < x ≤ 0.1) solid solutions crystallize in tetragonal symmetry and are isostructural with TlInSe₂.     

Fabrication of n-Zn1−xGaxO/p-(ZnO)1−x(GaP)x thin films and homojunction

Ga doped ZnO (GZO) and GaP codoped ZnO (GPZO) thin films of different concentrations (1–4 mol%) have been grown on sapphire substrates by RF sputtering for the fabrication of ZnO homojunction. The grown films have been characterized by X-ray diffraction (XRD), photoluminescence (PL), Hall measurement, energy dispersive spectroscopy (EDS), time-of-flight secondary ion mass spectrometer (ToF-SIMS), UV–Vis–NIR spectroscopy and atomic force microscopy (AFM). Unlike in conventional codoping, here we directly doped (codoped) GaP into ZnO to realize p-ZnO. The Hall measurements indicate that 2 and 4% GPZO films exhibit p-conductivity due to the sufficient amount of phosphorous incorporation while all the monodoped GZO films showed n-conductivity as expected. Among the p-ZnO films, 2% GPZO film shows low resistivity (2.17 Ωcm) and high hole concentration (1.8 × 10¹⁸ cm^?3) by optimum incorporation of phosphorous due to best codoping. Similarly, among the n-type films, 2% GZO shows low resistivity (1.32 Ωcm) and high electron concentration (2.02 × 10¹⁹ cm^?3) by optimum amount of Ga incorporation. The blue shift and red shift in NBE emission observed from PL acknowledged the formation of n- and p-conduction in monodoped and codoped films, respectively. The neutral acceptor bound exciton recombination (A⁰X) observed by low temperature PL for 2% GPZO confirms the p-conductivity. Further, the high concentration of P atoms than Ga observed from ToF-SIMS (2% GPZO) also supports the p-conductivity of the films. The fabricated p–n junction with best codoped p-(ZnO)_0.98(GaP)_0.02 and best monodoped n-Zn_0.98Ga_0.02O films showed typical rectification behavior of a diode. The diode parameters have also been estimated for the fabricated homojunction.