Thermal evolution of cobalt nanocrystals embedded in silica

The structural evolution of cobalt nanoclusters synthesized in silica glass by ion implantation has been investigated upon thermal annealing. The samples were characterized by in-situ grazing incidence X-ray diffraction, exploiting a synchrotron radiation beam and following their evolution during thermal treatments in vacuo up to T = 800 °C. Before heating, the system is composed of hcp Co nanocrystals; we have not detected the transition from hcp to fcc structure that in the bulk phase occurs around 420 °C; nevertheless, the differences in the diffraction pattern recorded at T = 800 °C with respect to the corresponding one at room temperature suggest the presence of a second crystalline phase.     

Linear and non-linear optical properties of capped CdTe nanocrystals prepared by mechanical alloying

CdTe nanocrystals were prepared by mechanical alloying the elemental Cd and Te powders. The formation of CdTe with a single cubic phase after 20 h of ball milling was confirmed by X-ray diffraction (XRD). The surface of as-milled CdTe nanoparticles was then capped with polarization TOP/TOPO or (Na₃PO₄)_n organic ligand, which resulted in colorful dispersion solution with optical absorption peaks located at 573 nm and 525 nm, respectively. The third-order non-linearity, namely, the non-linear refraction and two-photon absorption (TPA) coefficient, of the capped CdTe dispersion samples were evaluated using Z-scan technique. The fitting of Z-scan experimental data with a special equation demonstrated that the capped CdTe nanocrystals possess large third-order susceptibilities at resonant wavelength. The non-linear figure of merit (γ/β) for 20 h as-milled CdTe nanocrystals after capping with TOP/TOPO was determined to be ∼ −2 × 10⁻⁵ m, which is nearly 215 times larger than the value reported for bulk CdTe crystals.     

Study of optical properties of GeO2 nanocrystals as synthesized by hydrothermal technique

The GeO₂ nanocrystals (α-quartz type structure) with β-phase are synthesized at relatively lower temperature by hydrothermal route using autoclave. All samples are characterized by XRD, FESEM, EDS, TEM, photoluminescence (PL) and UV–vis absorption spectroscopy techniques. Synthesized nanocrystals have uniform shape and uniform size distribution for a particular synthesis condition, which is about 30–300 nm depending on synthesis conditions. The XRD results indicate that grown GeO₂ crystals only shows peak related to α-quartz structure with lattice parameters a = 4.985 Å and c = 5.648 Å. UV–vis absorption spectroscopy measurements reveal the bandgap energies corresponding to the GeO₂ α-quartz structure. Synthesized nanocrystals are capable to emit strong blue light around 425–435 nm under excitation of 300 nm and 325 nm and consequently the as synthesized material can be used in integrated optical devices.     

Crystal growth of ferroelectric PbTiO3 nanocrystals on silicon substrate via intermediates

A unique aggregation-based crystal growth phenomenon of PbTiO₃ nanodots on Si (1 0 0) substrate was observed. Compared to conventional nucleation and diffusion mechanism, a process of aggregation, self-assembly and coarsen process was found to facilitate the growth of PbTiO₃ (PT) nanocrystals on Si (1 0 0) substrates. In addition, intermediates, which were constructed by self-assembly of Pb–Ti oxide nanocrystals, were observed during the crystal growth process on Si (1 0 0) substrates.     

Morphology and phase selective synthesis of CuxO (x = 1, 2) nanostructures and their catalytic degradation activity

Cu_xO (x = 1, 2) nanocrystals have been synthesized by the composite-hydroxide-mediated approach. The obtained nanocrystals were characterized by X-ray diffraction, energy dispersive X-ray spectroscopy, scanning electron microscopy, transmission electron microscopy, and UV–vis spectrum. The morphology of the nanocrystals changed from sphere-shaped nanostructures to flower-shaped nanostructures, and finally to nanowires associated with phase transformation from CuO to Cu₂O by increasing the temperature. The possible phase transformation mechanism was discussed. The catalytic degradation activity of the Cu_xO (x = 1, 2) nanocrystals to methyl orange was also investigated. The photocatalytic ability of the sphere-shaped nanostructures is much higher than that of the nanowires, owing to its absorption of wider range of light energy. This work provides a new facile synthesis route of Cu_xO (x = 1, 2) nanocrystals and suggests their possible application in organic pollutants removal.     

Optical constants of thermally evaporated Se–Sb–Te films using only their transmission spectra

Amorphous Se_82 ? xTe₁₈Sb_x thin films with different compositions (x = 0, 3, 6 and 9 at.%) were deposited onto glass substrates by thermal evaporation. The transmission spectra, T(λ), of the films at normal incidence were obtained in the spectral region from 400 to 2500 nm. Based on the use of the maxima and minima of the interference fringes, a straightforward analysis proposed by Swanepoel has been applied to derive the optical constants and the film thickness. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple and DiDomenico model. Tauc relation for the allowed non-direct transition describes the optical transition in the studied films. With increasing antimony content the refractive index increases while the optical band gap decreases. The optical band gap decreases from 1.62 to 1.26 eV with increasing antimony content from 0 to 9 at.%. The chemical-bond approach has been applied successfully to interpret the decrease of the optical gap with increasing antimony content.     

Formation and spectral probing of transparent oxyfluoride glass-ceramics containing (Eu2+, Eu3+:BaGdF5) nano-crystals

In the present study, we report the formation of transparent glass-ceramics containing BaGdF₅ nanocrystals under optimum ceramization of SiO₂–BaF₂–K₂O–Sb₂O₃–GdF₃–Eu₂O₃ based oxyfluoride glass and the energy transfer mechanisms in Eu²⁺ → Eu³⁺ and Gd³⁺ → Eu³⁺ has been interpreted through luminescence study. The modification of local environment surrounding dopant ion in glass and glass ceramics has been studied using Eu³⁺ ion as spectral probe. The optimum ceramization temperature was determined from the differential scanning calorimetry (DSC) thermogram which revealed that the glass transition temperature (T_g), the crystallization onset temperature (T_x), and crystallization peak temperature (T_p) are 563 °C, 607 °C and 641 °C, respectively. X-ray diffraction pattern of the glass-ceramics sample displayed the presence of cubic BaGdF₅ phase (JCPDS code: 24-0098). Transmission electron microscopy image of the glass-ceramics samples revealed homogeneous distribution of spherical fluoride nanocrystals ranging 5–15 nm in size. The emission transitions from the higher excited sates (⁵D_J, J = 1, 2, and 3) as well as lowered asymmetry ratio of the ⁵D₀ → ⁷F₂ transition (forced electric dipole transition) to that of the ⁵D₀ → ⁷F₁ transition (magnetic dipole) of Eu³⁺ in the glass-ceramics when compared to glass sample demonstrated the incorporation of dopant Eu³⁺ ions into the cubic BaGdF₅ nanocrystals with higher local symmetry with enhanced ionic nature. The presence of absorption bands of Eu²⁺ ions and Gd³⁺ ions present in the glass matrix or fluoride nanocrystals in the excitation spectra of Eu³⁺ by monitoring emission at 614 nm indicated energy transfer from (Eu²⁺ → Eu³⁺) and (Gd³⁺ → Eu³⁺) in both glass and glass-ceramics samples.     

Solid-state synthesis of cubic ZnTe nanocrystals using a microwave plasma

Cubic ZnTe nanocrystals were produced from 1:1 and 1.8:1 molar ratios of Zn:Te by a 900 W microwave plasma. The phase was detected using X-ray diffraction (XRD), which are in accordance with those of the simulations, and selected area electron diffraction (SAED). Raman spectroscopy, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) showed that the products were nanocrystals with different orientations, including three longitudinal optical (LO) vibrations at 205, 410 and 620 cm^? 1 and a transverse optical (TO) vibration at 166 cm^? 1. Their green emissions were detected at 562 nm (2.21 eV) using luminescence spectrophotometry.     

Optical constants and band gap determination of Pb0.95La0.05Zr0.54Ti0.46O3 thin films using spectroscopic ellipsometry and UV–visible spectroscopy

We report the structural evolution and optical properties of lanthanum doped lead zirconate titanate (PLZT) thin films prepared on Pt/TiO₂/SiO₂/Si substrates by chemical solution deposition. X-ray diffraction demonstrates the post-deposition annealing induced crystallization for PLZT films annealed in a temperature (T_a) range of 550–750 °C. PLZT films annealed at higher temperature exhibit polycrystalline structure along with larger grain size. Optical band gap (E_g) values determined from UV–visible spectroscopy and spectroscopic ellipsometry (SE) for PLZT films were found to be in the range of 3.5–3.8 eV. E_g decreases with increasing T_a. The optical constants and their dispersion profiles for PLZT films were also determined from SE analyses. PLZT films show an index of refraction in the range of 2.46–2.50 (λ = 632.8 nm) with increase in T_a. The increase in refractive index at higher T_a is attributed to the improved packing density and crystallinity with the temperature.     

Liquid-phase epitaxy growth and characterization of Co,Si:YAG thin film saturable absorber

Thin films of Co,Si:YAG were grown on YAG and Er,Yb:YAG substrates by means of the isothermal liquid-phase epitaxy (LPE) dipping technique. X-ray diffraction analysis, optical transmission spectra measurements, and passive Q-switching experiments were performed to characterize the obtained layers. Absorption saturation measurements of Co,Si:YAG thin films were carried out at 1.54 μm. Passive Q-switching of the Er:glass laser by use of epitaxial Co,Si:YAG/YAG was observed. We demonstrated experimentally that the Co,Si:YAG layers could be used as an effective saturable absorber for the lasers operating near 1.5 μm.     

Er3+/Yb3+ codoped oxyfluoride borosilicate glass ceramic containing NaYF4 nanocrystals for amorphous silicon solar cells

Transparent oxyfluoride borosilicate glass ceramic containing cubic NaYF₄ nanocrystals were successfully fabricated. The cubic NaYF₄ nanocrystals with average size of 30 nm were precipitated in the glass matrix, which was confirmed by the X-ray diffraction and TEM results. In comparison with the as-made glass, significant enhancement of upconversion luminescence is observed in the Er³⁺/Yb³⁺ codoped transparent glass ceramic, which may be due to the variation of coordination environment of Er³⁺ and Yb³⁺ ions after crystallization. The high transparency, intense upconversion luminescence and the simple, low-cost fabrication process make this material exhibiting potential applications in the fields of amorphous silicon solar cells.     

Spectroscopic ellipsometry and magneto-transport investigations of Mn-doped ZnO nanocrystalline films deposited by a non-vacuum sol–gel spin-coating method

Nanocrystalline Zn_1?xMn_xO films (x = 0, 0.05, 0.1, 0.15, and 0.2) were deposited onto corning glass substrates by a non-vacuum sol–gel spin coating method. All of the films were annealed at 450 °C for 2 h. The structural, optical and magneto-transport properties were investigated by X-ray diffraction, spectroscopic ellipsometry and a system for the measurement of the physical properties. X-ray diffraction analysis of the films reveals that the Mn-doped ZnO films crystallize in the form of a hexagonal wurtzite-type structure with a crystallite size decreases with an increase of the Mn concentration. It was also found that the microstrain increases with the increase of the Mn content. Evidence of nanocrystalline nature of the films was observed from the investigation of surface morphology using transmission, scanning electron microscopy and atomic force microscopy. The optical constants and film thicknesses of nanocrystalline Zn_1?xMn_xO films were obtained by fitting the spectroscopic ellipsometric data (ψ and Δ) using a three-layer model system in the wavelength range from 300 to 1200 nm. The refractive index was observed to increase with increasing Mn concentration. This increase in the refractive index with increasing Mn content may be attributed to the increase in the polarizability due to the large ionic radius of Mn²⁺ compared to the ionic radius of Zn²⁺. The optical band gap of the nanocrystalline Mn–ZnO films was determined by an analysis of the absorption coefficient. The direct transition of the series of films was observed to have energies increasing linearly from 3.17 eV (x = 0) to 3.55 eV (x = 0.2). Magnetoresistance (MR) was measured from 5 K to 300 K in a magnetic field of up to 6 T. Low-field positive MR and high-field negative MR were detected in Mn-doped ZnO at 5 K. Only negative MR was observed for temperatures above 200 K. The positive MR in Mn-doped ZnO films was observed to decrease drastically when the temperature increased from 5 K to 100 K. The isothermal MR of Zn_1?xMn_xO films with different Mn concentrations at 5 K reveals that the increase of the Mn content induces a giant positive MR above x = 0.05 and reaches up to 55% at an applied field of 30 kOe for x = 0.2.     

Structural,optical and electrical characterization of ZnO:Ga thin films for organic photovoltaic applications

Gallium-doped zinc oxide (ZnO:Ga) films were prepared on glass substrates by RF magnetron sputtering. The effect of growth temperature on microstructure, optical and electrical properties of the films was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), UV–visible spectrophotometer and four-point probe. The results show that all the films are polycrystalline and (002) oriented, and that the growth temperature significantly affects the microstructure and optoelectrical properties of the films. The film deposited at 670 K has the largest grain size of 71.9 nm, the lowest resistivity of 8.3 × 10^? 4 Ω?cm and the highest figure of merit of 2.1 × 10^? 2 Ω^? 1. Furthermore, the optical energy gaps and optical constants were determined by optical characterization methods. The dispersion behavior of the refractive index was also studied using the Sellmeir's dispersion model and the oscillator parameters of the films were obtained.     

Nonlinear optical properties of the PbS nanorods synthesized via surfactant-assisted hydrolysis

PbS nanorods were synthesized by surfactant-assisted homogenous hydrolysis. The products were characterized by UV–vis spectrophotometer, X-ray powder diffraction (XRD) and transmission electron microscope (TEM). PbS nanorods were measured by the Z-scan technique to investigate the third-order nonlinear optical (NLO) properties. The result of the NLO measurements shows that the PbS nanorods have the third-order nonlinear optical properties of both NLO absorption and NLO refraction with self-focusing effects. The nonlinear absorption coefficient and refractive index of the PbS nanorods are 2.16 × 10^− 9 m/W and 3.52 × 10^− 16 m²/W respectively.     

Structural and optical analyses of polycrystalline Zn1−xSbxSe thin films prepared by resistive heating technique

Here we report the influence of Sb doping on the structural and optical properties of Zn_1−xSb_xSe (0 ⩽ x ⩾ 0.15) thin films prepared by thermal evaporation technique on glass substrate. Various characterization techniques such as X-ray diffraction (XRD), EDS, Raman spectroscopy and spectroscopic ellipsometer are employed to assess the structural and optical properties of the deposited films. XRD analysis reveals the formation of polycrystalline cubic structure having preferred growth orientation along (1 1 1) plane without any evidence of secondary phases. Crystallographic parameters like grain size, micro strain, dislocation density, number of crystallites per unit area and texture coefficient point out the structural modification in ZnSe films with Sb inclusion. Raman analysis shows the existence of three 1LO, 2LO and 3LO phonon modes at 251, 511 and 745 cm⁻¹ in pure ZnSe while 3LO mode disappears by the incorporation of Sb atoms in ZnSe matrix. Increase in FWHM of Raman peaks with Sb concentration also indicates the change in crystalline quality of ZnSe films which is in accordance with our XRD results. Spectroscopic ellipsometry results demonstrate a decreasing trend for the optical band gap energy (from 2.61 eV to 1.81 eV) with increasing Sb content.     

Effects of Si addition on microstructure and mechanical properties of Mg–8Gd–4Y–Nd–Zr alloy

Effects of Si addition (1.0 wt.%) on microstructure and mechanical properties of Mg–8Gd–4Y–Nd–Zr alloy have been investigated using scanning electron microscopy (SEM) equipped with energy dispersive spectrum (EDS), X-ray diffraction (XRD), hardness measurements and tensile testing. The results indicated that the addition of Si led to the formation of Mg₂Si and (RE + Si)-rich particles, which enhanced the Young’s modulus of the alloy by 7 GPa while decreased the yield strength and ultimate strength by 10 MPa and 31 MPa, respectively. The tensile properties of the Mg–8Gd–4Y–Nd–Zr–Si alloy are as follows: Young’s modulus E = 51 GPa, yield strength σ_0.2 = 347 MPa, ultimate strength σ_b = 392 MPa and elongation δ = 2.7%. The increase in Young’s modulus was attributed to the formation of particles with high Young’s modulus, while the decrease in strength was ascribed to the decrease in volume fraction of metastable β′ precipitates caused by the consumption of rare earth atoms due to the formation of the rare earth containing particles.     

Light guidance in new chalcogenide holey fibres from GeGaSbS glass

Holey fibres have a broad range of optical properties thanks to their microstructuration and offer a wide range of applications. The combination of intrinsic properties of compound glass, such as chalcogenide glass, and a microstructured fibre geometry allows to consider exacerbated optical properties such as dispersion and nonlinearity for these fibres. In this study, high-index sulphide glass holey fibres (n = 2.251 at 1.55 μm) have been accomplished using the capillary-stacking technique. Sulphide glasses from the GeGaSbS system are used. The drawing step is crucial for microstructuration and for determination of optical properties. Sulphide holey fibres, which were optically characterised with near-field spectroscopy at 1.55 μm, show a single-mode guidance with an effective mode area of 108 μm².     

Structural and optical properties of In doped Se–Te phase-change thin films: A material for optical data storage

Se_75−xTe₂₅In_x (x = 0, 3, 6, & 9) bulk glasses were obtained by melt quench technique. Thin films of thickness 400 nm were prepared by thermal evaporation technique at a base pressure of 10⁻⁶ Torr onto well cleaned glass substrate. a-Se_75−xTe₂₅In_x thin films were annealed at different temperatures for 2 h. As prepared and annealed films were characterized by X-ray diffraction and UV–Vis spectroscopy. The X-ray diffraction results show that the as-prepared films are of amorphous nature while it shows some poly-crystalline structure in amorphous phases after annealing. The optical absorption spectra of these films were measured in the wavelength range 400–1100 nm in order to derive the extinction and absorption coefficient of these films. It was found that the mechanism of optical absorption follows the rule of allowed non-direct transition. The optical band gap of as prepared and annealed films as a function of photon energy has been studied. The optical band gap is found to decrease with increase in annealing temperature in the present glassy system. It happens due to crystallization of amorphous films. The decrease in optical band gap due to annealing is an interesting behavior for a material to be used in optical storage. The optical band gap has been observed to decrease with the increase of In content in Se–Te glassy system.     

Deposition of nanocrystalline ZnO by wire explosion technique and characterization of the films' properties

ZnO films deposited on glass, quartz and Al on silicon mono-crystal Si (100) substrates by using the wire explosion technique were investigated by X-ray diffraction (XRD), UV–VIS spectroscopy, scanning electron (SEM) and atomic force microscopy (AFM) measurements. X-ray diffraction measurements have shown that ZnO films are mainly composed of (100), (002) and (101) orientation crystallites. The post-deposition thermal treatment at 600 °C temperature in air has shown that the composite of Zn/ZnO film was fully oxidized to ZnO film. The XRD spectra of the film deposited in oxygen atmosphere at room temperature present high intensity dominating peak at 2h = 36, 32° corresponding to the (101) ZnO diffraction peak. The small fraction of the film (7%) corresponds to the (002) peak intensity at 2h = 34, 42°. This result indicates the good crystal quality of the film and hexagonal wurtzite-type structure deposited by zinc wire explosion. The optical absorption spectra shows the bands at 374, 373 and 371 nm corresponding to deposition conditions. The SEM analysis shows that ZnO films presented different morphologies from fractal network to porous films depending on deposition conditions. AFM analysis revealed the grain size ranges from 50 nm to 500 nm. The nanoneedles up to 300 nm in length were found as typical structures in the film. It was demonstrated that the wire explosion technique is a feasible method to produce ZnO crystalline thin films and nanostructures.     

Effects of substrate parameters on structure and optical properties of ZnO thin films fabricated by pulsed laser deposition

Highly oriented zinc oxide thin films have been grown on quartz, Si (1 1 1) and sapphire substrates by pulsed laser deposition (PLD). The effect of temperature and substrate parameter on structural and optical properties of ZnO thin films has been characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), optical transmission spectra and PL spectra. The experimental results show that the best crystalline thin films grown on different substrate with hexagonal wurtzite structure were achieved at growth temperature 400–500 °C. The growth temperature of ZnO thin film deposited on Si (1 1 1) substrate is lower than that of sapphire and quartz. The band gaps are increasing from 3.2 to 3.31 eV for ZnO thin film fabricated on quartz substrate at growth temperature from 100 to 600 °C. The crystalline quality and UV emission of ZnO thin film grown on sapphire substrate are significantly higher than those of other ZnO thin films grown on different substrates.