Evaluation of gamma and neutron irradiation effects on the properties of mica film capacitors

We present an investigation of gamma and neutron radiation effects on mica film capacitors from an electrical point of view. We have studied quantitatively the effects of gamma and neutron irradiation on mica film capacitors of thickness, 20 and 40 μm (0.7874 and 1.5748 mil) with two different areas, 01 and 04 cm². The capacitance has been measured at room temperature in the frequency range 100 Hz-10 MHz. Negligible change in the capacitance due to high gamma dose of⁶⁰Co, 15 kGy at dose rate 0.25 kGy/h, has been observed. However, appreciable change in the capacitance has been observed due to low doses of fast neutrons (cumulative dose, 115 cGy) with flux ∼ 9.925 x 10⁷ neutrons/cm² h from²⁵²Cf neutron source of fluence, 2.5 × 10⁷ neutrons/s. We have also observed that the impact of gamma and neutron irradiation is more at frequencies higher than 10 kHz. These results show that the mica capacitors do not show any radiation response below 10 kHz. The study shows the radiation response of mica film capacitors to gamma and fast neutron radiations. Mica capacitors show low gamma radiation response in comparison to fast neutron radiation, because a total dose of kGy order has been given by gamma source and only few cGy dose has been given by fast neutron source.     

Structural and electrical properties of swift heavy ion beam irradiated Co/Si interface

Synthesis of swift heavy ion induced metal silicide is a new advancement in materials science research. We have investigated the mixing at Co/Si interface by swift heavy ion beam induced irradiation in the electronic stopping power regime. Irradiations were undertaken at room temperature using 120 MeV Au ions at the Co/Si interface for investigation of ion beam mixing at various doses: 8 × 10¹², 5 × 10¹³ and 1 × 10¹⁴ cm⁻². Formation of different phases of cobalt silicide is identified by the grazing incidence X-ray diffraction (GIXRD) technique, which shows enhancement of intermixing and silicide formation as a result of irradiation.I–V characteristics at Co/Si interface were undertaken to understand the irradiation effect on conduction mechanism at the interface.     

Evidence for Irradiation Triggered Nonuniform Defects Distribution in Multiharmonic Magnetic Susceptibility of Neutron Irradiated YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>7−</Subscript><Subscript><Emphasis Type="Italic">δ</Emphasis></Subscript>

Multiharmonic ac-magnetic susceptibilityx ₁,x ₂,x ₃, of neutron irradiated Li-doped YBa₂Cu₃O_7−x has revealed a nonmonotonic dependence of all harmonics on the neutron fluence. The irradiation has a strongly depressive influence on the intergrain connection suggesting an increase of the effective thickness of the intergranular Josephson junction at a neutron fluence of 0.98 × 10¹⁷ cm⁻². Less damaged are the intragrain properties. A spectacular enhancement of the superconducting intragranular properties reflected in the characteristics of all harmonics was observed at highest fluence φ=9.98 × 10¹⁷ cm⁻². We assume that this effect results from the development of a space inhomogeneous distribution with alternating defectless and defect-rich regions.     

Effect of temperature and α-irradiation on gas permeability for polymeric membrane

In the present study the polyethersulphone (PES) membranes of thickness (35 ±2) μm were prepared by solution cast method. The permeability of these membranes was calculated by varying the temperature and by irradiation of α ions. For the variation of temperature, the gas permeation cell was dipped in a constant temperature water bath in the temperature range from 303–373 K, which is well below the glass transition temperature (498 K). The permeability of H₂ and CO₂ increased with increasing temperature. The PES membrane was exposed by a-source (₉₅Am₂₄₁) of strength (1 μ Ci) in vacuum of the order of 10⁻⁶ torr, with fluence 2.7 × 10⁷ ions/cm². The permeability of H₂ and CO₂ has been observed for irradiated membrane with increasing etching time. The permeability increases with increasing etching time for both gases. There was a sudden change in permeability for both the gases when observed at 18 min etching. At this stage the tracks are visible with optical instrument, which confirms that the pores are generated. Most of pores seen in the micrograph are circular cross-section ones.     

Synthesis and characterization of HDA/NaMMT organoclay

In this study, the rheologic and colloidal characterizations of sodium montmorillonite (NaMMT) were examined. Hexadecylamine (CH₃(CH₂)₁₅NH₂, HDA) was added to the bentonite water dispersion (2%, w/w) in different concentrations in the range 5.6 × 10⁻⁴−9.4 × 10⁻³ mmol/l. The rheological and electrokinetic behaviour of aqueous montmorillonite dispersions was investigated as a function of solid content and HDA concentration. The basal spacings of the HDA/NaMMT composites were studied by X-ray diffraction. The FTIR spectra were obtained from the modified bentonite products, which revealed the characteristic absorbances after treatment with HDA.     

Evidence for Irradiation Triggered Nonuniform Defects Distribution in Multiharmonic Magnetic Susceptibility of Neutron Irradiated YBa2Cu3O7?δ

Multiharmonic ac-magnetic susceptibility χ₁, χ₂, χ₃, of neutron irradiated Li-doped YBa₂Cu₃O_{7− x} has revealed a nonmonotonic dependence of all harmonics on the neutron fluence. The irradiation has a strongly depressive influence on the intergrain connection suggesting an increase of the effective thickness of the intergranular Josephson junction at a neutron fluence of 0.98 × 10¹⁷ cm⁻². Less damaged are the intragrain properties. A spectacular enhancement of the superconducting intragranular properties reflected in the characteristics of all harmonics was observed at highest fluence Φ = 9.98 × 10¹⁷ cm⁻². We assume that this effect results from the development of a space inhomogeneous distribution with alternating defectless and defect-rich regions.     

Laser annealing of neutron irradiated boron-10 isotope doped diamond

¹⁰B isotope doped p-type diamond epilayer grown by chemical vapor deposition on (110) oriented type IIa diamond single crystal substrate was subjected to neutron transmutation at a fluence of 2.4 × 10²⁰ thermal and 2.4 × 10²⁰ fast neutrons. After neutron irradiation, the epilayer and the diamond substrate were laser annealed using Nd–YAG laser irradiation with wave length, 266 nm and energy, 150 mJ per pulse. The neutron irradiated diamond epilayer and the substrate were characterized before and after laser annealing using different techniques. The characterization techniques include optical microscopy, secondary ion mass spectrometry, X-ray diffraction, Raman, photoluminescence and Fourier Transform Infrared spectroscopy, and electrical sheet conductance measurement. The results indicate that the structure of the irradiation induced amorphous epilayer changes to disordered graphite upon laser annealing. The irradiated substrate retains the (110) crystalline structure with neutron irradiation induced defects.     

Study of optical,structural and chemical properties of neutron irradiated PADC film

We have investigated neutron irradiation effects on the optical, structural and chemical properties of polyallyl diglycol carbonate (PADC) polymer, commercially named as CR-39. For this purpose, PADC samples were exposed with 4 MeV Am–Be neutron source at fluences varying from 2.36 × 10⁶ to 5.94 × 10⁷ n/cm². The modifications so induced were analyzed using UV–Visible spectroscopy, X-ray diffraction Measurement (XRD), Photoluminescence (PL) and Fourier Transform infrared (FTIR) spectroscopy in the total attenuation reflection (ATR) mode. UV–Vis spectra of pristine and neutron irradiated PADC polymer sheets exhibit a decreasing trend in optical band gap. This decline in optical band gap with increasing fluence has been discussed on the basis of neutron irradiation induced defects in PADC. The XRD pattern of PADC shows the decreasing intensity of peak positions with increasing in fluence, which suggest that semicrystallinity of PADC changes slightly to amorphous phase after irradiation. At low fluence, crystallinity was found to increase but at higher fluence, it decreased which could be ascribed to neutron- induced defects in the polymer samples. Crystallite size calculated using Scherrer formula indicates a change and reflects the formation of disordered system in the irradiated polymer samples. The PL spectra show that the intensity of PL peak decreased with increase in fluence, which may be due to the disordered system via creation of defects in the irradiated polymer. The FTIR spectrum shows an overall reduction in intensity of the typical bands, indicating the degradation of PADC polymer after irradiation. These results so obtained can be used successfully in dosimetery using well reported protocols.     

Infrared absorption spectra of defects in carbon doped neutron-irradiated Si

Experimental data of infrared (IR) absorption measurements carried out on fast neutron irradiated carbon rich Cz–Si crystals were studied. Data from similar crystals, subjected prior to irradiation to thermal treatments at 1000 °C [(HT)] and thermal treatments at 1000 °C under high hydrostatic pressure [(HTHP)] of 11Kbar, were also studied. The time duration of both treatments was 5 h. After the irradiation the intensities of most of the observed bands were always stronger in the pre-treated material. Transformation of the defects upon post-irradiation isochronal anneals was investigated. Two out of six IR bands of the C_iC_s defect in the neutral charge state, at 543.5 and 635 cm⁻¹, were detected at room temperature [(RT)]. It is argued that another two bands at 918 and 1006 cm⁻¹ arising in the spectra upon annealing of the C_iC_s bands are associated with the same carbon-related structure giving rise to the Si-PT4 electron paramagnetic resonance (EPR) spectrum. A band at 533 cm⁻¹ shows the same thermal evolution with a defect giving rise to the Si-P6 EPR spectrum attributed to a multi-interstitial cluster in silicon. Differences observed in the evolution curves of the C_iC_s(Si_I) defect (987, 993 cm⁻¹) between the as-grown and the pre-treated samples are considered and discussed.     

Versatile preparation method for mesoporous TiO2 electrodes suitable for solid-state dye sensitized photocells

Nano-structured TiO₂ electrodes, suitable for dye sensitized solid-state solar cells were prepared by a new simple spraying technique (SPT). Physical properties of these electrodes were compared with the electrodes prepared by the ‘doctor blade’ technique (typical sliding method, DB). Dye sensitized solid-state solar cells, comprising of CuI as the hole conductor, were fabricated with these electrodes and enhanced photo responses were obtained with SPT electrodes. The effects of additives, either to the spray solution or to the hole conductor on the photoresponses of the above devices were also studied. The cells fabricated with SPT electrodes containing Al(BuⁱO)₃ showed ∼ 2.4% efficiency and addition of 1-ethyl-3-methyl imidazolium thiocyanate into CuI layer further enhanced the efficiency up to 2.75% under the irradiance of 100 mW cm⁻² (AM 1.5).     

Photoluminescence and Raman studies in swift heavy ion irradiated polycrystalline aluminum oxide

Polycrystalline aluminum oxide is synthesized by combustion technique and XRD studies of the sample revealed the α-phase. The synthesized sample is irradiated with 120 MeV swift Au⁹⁺ ions for the fluence in the range from 1 × 10¹¹ to 1 × 10¹³ ions cm⁻². A broad photoluminescence (PL) emission with peak at ∼ 447 nm and two sharp emissions with peak at ∼ 679 and ∼ 695 nm are observed in pristine when sample was excited with 326 nm. However, in the irradiated samples the PL intensity at ∼ 447, 679 and 695 nm decreases with increase in ion fluence. The α-Al₂O₃ gives rise to seven Raman modes with Raman intensity with peaks at ∼ 253, 396, 417, 546, 630, 842, 867 cm⁻¹ observed in pristine. The intensity of these modes decreases with increase in ion fluence. However, the Raman modes observed at lower fluences are found to disappear at higher fluence.     

Peculiarities in the formation of gold nanoparticles by ion implantation in stabilized zirconia

The investigation of bulk single crystals and sputter-deposited films of yttria-stabilized zirconia (YSZ) upon irradiation by gold (Au) ions with an average energy of 160 keV followed by postimplantation annealing revealed peculiarities in the formation of nanocrystalline metal (nc-M) particles in this matrix. In the case of irradiation to small doses (∼5 × 10¹⁵ cm⁻²), the optical absorption spectra of samples showed evidence of the formation of nanoclusters of matrix cations (nc-Zr). In these samples, postimplantation annealing at temperatures ∼700°C and above leads to the formation of nc-Au particles. Local elemental analysis of individual nc-M particles in the YSZ matrix irradiated to a dose of 4 × 10¹⁶ cm⁻² and annealed at 800°C showed the presence of metal nanoparticles with complex compositions including both implanted Au and matrix Zr atoms.     

Optical absorption and electron spin resonance studies of Cu2+ in Li2O-Na2O-B2O3-As2O3 glasses

The local structure around Cu²⁺ ion has been examined by means of electron spin resonance and optical absorption measurements in xLi₂O-(40-x)Na₂O-50B₂O₃-10As₂O₃ glasses. The site symmetry around Cu²⁺ ions is tetragonally distorted octahedral. The ground state of Cu²⁺ isd _x ²−y ².The glass exhibited broad absorption band near infrared region and small absorption band around 548 nm, which was assigned to the ²B_1g →²E_g transition.     

An electron spin resonance study of Mn2+ doped calcium hydrazine carboxylate monohydrate

Single crystals of calcium hydrazine carboxylate, monohydrate have been studied by ESR of Mn²⁺ doped in the calcium sites. X-band ESR indicated a large crystal field splitting necessitating experiments at Q band. The analysis shows two magnetically inequivalent (but chemically equivalent) sites withg _xx = 2.0042±0.0038,g _yy=2.0076 ±0.0029,g _zz=2.0314±0.001,A _zz=0.0099±0.0002 cm⁻¹,A _xx=0.0092±0.0002 cm⁻¹,A _yy=0.0082±0.0002 cm⁻¹,D=3/2D _zz=0.0558±0.0006 cm⁻¹, andE=1/2 (D _yy−D _yy)=0.0127±0.0002 cm⁻¹. One of the principal components of the crystal field, (D _zz), is found to be along the Ca ↔ Ca direction in the structure and a second one, (D _xx), along the perpendicular to the plane of the triangle formed by three neighbouring calciums. TheA tensor is found to have an orientation different from that of theg andD tensors reflecting the low symmetry of the Ca²⁺ sites.     

Proton induced modification in makrofol-DE

Irradiation effects of a 3 MeV proton beam on polycarbonate (makrofol-DE (MFD)) have been studied with respect to its electrical, thermal and structural behaviour by using an LCR meter, DSC/TGA and FTIR spectroscopy. The dielectric loss/constant was observed to change with the fluence. Thermal analysis revealed that chain scission is the dominant phenomena in irradiated samples based on the reduction of its thermal stability by about 19% at a fluence of 10¹⁵ ions/cm², which is also corroborated by FTIR spectra. No significant change in intensity of the absorbance bands of the irradiated sample was observed up to a fluence of 10¹⁴ ions/cm² while on increasing fluence (10¹⁵ ions/cm²) the polymer structure was modified. It appears from DSC thermograms thatT _g is observed to change with fluence.     

Laser implantation of impurities in cadmium telluride crystals

Processes of laser implantation of shallow donors (aluminum and indium) and an acceptor (antimony) in CdTe crystals (n,p∼10¹⁵ cm⁻³) are investigated. Thin dopant films vacuum deposited on the etched surface of the crystals are irradiated by ruby (λ=0.694 μm) and Nd:YAG (λ=1.06 μm) laser pulses (pulse duration 20 ns) over a wide energy interval (0.1–1.8 J/cm²). The irradiated surfaces are studied by x-ray microanalysis, Auger spectroscopy, and the thermopower method. It is it is shown that irradiation by a Nd:YAG laser produces a uniform doping of a subsurface layer of the crystal by aluminum. The implantation of indium leads to the formation of a precipitate. The concentration of implanted impurities reaches 10¹⁹–10²¹ cm⁻³. Pis’ma Zh. Tekh. Fiz. 24, 1–6 (June 12, 1998)     

The effect of neutron irradiation on the microhardness of gallium arsenide

We have studied the effect of neutron irradiation on the microhardness of n-GaAs crystals. It is shown that the growth and saturation of microhardness with increasing radiation dose Φ, as previously reported in the literature, take place only in the dose range Φ∼10¹⁵−5×10¹⁶ cm⁻². As the neutron dose is increased further, the microhardness continues to grow due to the increasing role of the radiation-induced disordered regions in n-GaAs.     

High resistivity In-doped ZnTe: electrical and optical properties

Semi-insulating <111> ZnTe prepared by In doping during Bridgman growth was found to have a resistivity of 5.74 × 10⁷ ohm-cm, the highest reported so far in ZnTe, with hole concentration of 2.4 × 10⁹/cm³ and hole mobility of 46 cm² /V.s at 300 K. The optical band gap was 2.06 eV at 293 K compared with 2.26 eV for undoped semiconducting ZnTe. Thermally stimulated current (TSC) studies revealed 2 trap levels at depths of 202–222 meV and 412–419 meV, respectively. Photoluminescence (PL) studies at 10 K showed strong peaks at 1.37 eV and 1.03 eV with a weak shoulder at 1.43 eV. Short anneal for 3 min at 250°C led to conversion to a p-type material with resistivity, 14.5 ohm-cm, indicating metastable behaviour. Raman studies carried out on undoped and In-doped samples showed small but significant differences. Possible models for semi-insulating behaviour and meta-stability are proposed.     

Structural and electrical properties of swift heavy ion beam irradiated Fe/Si interface

The present work deals with the mixing of iron and silicon by swift heavy ions in high-energy range. The thin film was deposited on a n-Si (111) substrate at 10⁻⁶ torr and at room temperature. Irradiations were undertaken at room temperature using 120 MeV Au⁺⁹ ions at the Fe/Si interface to investigate ion beam mixing at various doses: 5 × 10¹² and 5 × 10¹³ ions/cm². Formation of different phases of iron silicide has been investigated by X-ray diffraction (XRD) technique, which shows enhancement of intermixing and silicide formation as a result of irradiation. I-V measurements for both pristine and irradiated samples have been carried out at room temperature, series resistance and barrier heights for both as deposited and irradiated samples were extracted. The barrier height was found to vary from 0·73–0·54 eV. The series resistance varied from 102·04–38·61 kΩ.     

Diffusion of promethium in silicon

The first investigations have been made on the diffusion of promethium in silicon. In the temperature range from 1100 to 1250 °C the diffusion constant of promethium increases from ∼1×10⁻¹³ cm²/s to ∼1.5×10⁻¹² cm²/s. The temperature dependence of the diffusion coefficient can be described by D = 5 x 10⁻¹ exp[-(3.3 eV/kT]cm²/s. Pis’ma Zh. Tekh. Fiz. 23, 46–50 (January 26, 1997)